WO2015149331A1 - 光谱仪、光谱仪的波导片的制造方法及其结构 - Google Patents
光谱仪、光谱仪的波导片的制造方法及其结构 Download PDFInfo
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- WO2015149331A1 WO2015149331A1 PCT/CN2014/074738 CN2014074738W WO2015149331A1 WO 2015149331 A1 WO2015149331 A1 WO 2015149331A1 CN 2014074738 W CN2014074738 W CN 2014074738W WO 2015149331 A1 WO2015149331 A1 WO 2015149331A1
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- stray light
- waveguide
- positioning side
- positioning
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0256—Compact construction
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0205—Optical elements not provided otherwise, e.g. optical manifolds, diffusers, windows
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/02—Details
- G01J3/0262—Constructional arrangements for removing stray light
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J3/00—Spectrometry; Spectrophotometry; Monochromators; Measuring colours
- G01J3/12—Generating the spectrum; Monochromators
- G01J3/18—Generating the spectrum; Monochromators using diffraction elements, e.g. grating
Definitions
- the present invention relates to a spectrometer, and more particularly to a Waveguide having a precision contact locating surface produced by a MEMS manufacturing process, which allows the spectrometer assembly to be in contact therewith. Being accurately positioned.
- the optical chirp is an instrument that uses optical principles to resolve complex light into a pupil. It is mainly used to measure the absorption, penetration or reflection of a sample, and the characteristics of the optical language analysis include non-destructive. Sexuality, chemical discrimination, wavelength flexibility, high sensitivity and fast analysis speed, so that the optical instrument is widely used in metallurgy, geology, petrochemical, medical and health, environmental protection and other fields, but also military reconnaissance and space exploration. Methodology, equipment and equipment that rely on resources, hydrological surveys, etc.
- the refractometer 90 has a space 91 to be set up and down.
- the pair of reflective sheets serves as a waveguide sheet, and the pair of waveguide sheets have a gap passage between them for light to travel.
- the lithograph 90 also includes a plurality of spectrometer components, such as an incident slit device 92, a micro-grating 93, and a line detector 94.
- the incident light When the incident light enters from the incident slit device 92, it is then advanced in the gap channel between the waveguide sheets, and is then projected onto the micro-grating 93 for splitting, and the light of each wavelength is split and projected onto the line detector 94. Finally, the line type detector 94 converts the received spectral line into a current through photoelectric conversion, and then analyzes the external line to obtain information on the intensity of the corresponding line.
- each optical component assembly needs to be positioned to ensure the accuracy of the finished product; however, the existing miniature optical transmitter does not have a special positioning position, but passes The machined molded housing allows the optical instrument assembly to bear, and the abutment formed by these warp-cutting procedures does not have the ability to be accurately positioned, resulting in a lack of precision in the assembled micro-light transmitter.
- the existing microspectrometer uses a wire cutting program to process aluminum sheets to form a bearing, but such a bearing has characteristics such as burrs and unevenness due to sparking during wire cutting. The ability to pinpoint is limited.
- the machining precision of the wire cutting processing method and the subsequent polishing operation is about 20 to 30 um, the compound tolerance is accumulated, and the arrangement of the optical component components such as the slit member and the grating is misplaced, which seriously affects the accuracy of the light projection. Degree and reception accuracy, which in turn leads to the problem of accuracy of the optical signal analyzed and measured by the light lecturer.
- the waveguide sheet in the micro-light panel needs to be cooled with the cutting liquid during the wire cutting, so that the surface of the waveguide sheet is contaminated, and the subsequent cleaning process is required, which will increase the manufacturing process and manufacturing cost, which is inconsistent with manufacturing. Economical efficiency;
- the polishing operation after wire cutting processing will make the waveguide sheet easy to produce the lead angle, which also affects the accuracy of assembly, and is not conducive to the light projection transmission and processing operation when the micro-light transmitter is used. Therefore, how to solve the existing spectrometer components, especially the lack of precision in the manufacture and installation of the waveguide, should be an important issue that the industry or intelligent taxis should try to solve and overcome.
- the main object of the present invention is to provide a method for manufacturing a waveguide sheet of a photometer, which can make the produced waveguide sheet have a precise contact positioning surface for the optical error detector assembly to pass through the microelectromechanical manufacturing program. It can reduce the misalignment and ensure the accuracy and stability of the optical signal transmission quality and path, and then achieve the excellent analysis and measurement effect of the optical language instrument.
- Another object of the present invention is to provide a method for manufacturing a waveguide sheet of a spectrometer, which can make the manufacture of the waveguide sheet have a short processing efficiency, and can eliminate the shape limitation of the manufacturing thereof, and can actively cooperate with the photometer.
- the light path is designed to precisely position the light meter components.
- Still another object of the present invention is to provide a structure of a waveguide sheet of an optical language instrument, which is matched
- the optical path design of the photometer can make the stray light on the non-main optical path leave the stray light output port, reducing the possibility of continuous travel between the two waveguide plates of the spectrometer, thereby reducing the noise error of the spectrometer.
- a further object of the present invention is to provide a light-emitting device comprising the aforementioned waveguide sheet having a precise contact positioning surface in a structural composition, so that the optical transmitter component thereof is accurately positioned, and It can make the stray light escape, and improve the sensitivity and resolution of the photometer as a whole.
- the present invention discloses a method for fabricating a waveguide of a light transmitter and an optical device, and a structure thereof.
- the method for manufacturing a waveguide sheet includes the steps of: setting a microelectromechanical process a micro-electromechanical process pattern comprising a first waveguide sheet pattern of the spectrometer; and performing a microelectromechanical manufacturing process to generate at least one waveguide sheet according to the microelectromechanical process pattern, wherein the waveguide sheet has a microelectromechanical manufacturing program Forming at least one positioning side and at least one stray light dissipation side, wherein the positioning side is used for a light transmitter component of the optical transmitter to abut the light transmitter component on the positioning side, The stray light dissipation side is used as one side of a stray light output port.
- FIG. 1 is a schematic view showing the internal structure of a micro-spectrometer of the prior art
- FIG. 2 is a schematic structural view of a waveguide sheet manufactured according to an embodiment of the present invention
- FIG. 3A is a schematic diagram of a waveguide sheet including a main optical path region and a non-main optical path region according to an optical path design according to an embodiment of the present invention
- FIG. 3B is a cross-sectional structural view of an optical lighter assembled according to an embodiment of the present invention
- FIG. 3C is a schematic structural view showing a side of a stray light dissipation side of a waveguide piece used in another embodiment of the present invention
- 3D is a schematic structural view showing a non-linear positioning side and a stray light dissipation side according to still another embodiment of the present invention
- 4 is a flow chart showing the steps of a first method embodiment of the present invention
- FIG. 5A is a flow chart showing a structural change of a substrate in a first method embodiment of the present invention
- FIG. 6A and FIG. 6C are schematic diagrams showing the use of a silicon wafer as a substrate in an embodiment of the present invention
- FIG. 7 is a second method embodiment of the present invention
- Step flow chart ;
- FIG. 8 is a schematic diagram showing a region division of a substrate using a silicon wafer according to a second method embodiment of the present invention
- FIG. 9 is a schematic structural view of a waveguide sheet manufactured according to a second method embodiment of the present invention.
- FIG. 10 is a schematic structural view showing an anisotropic etching bevel according to an embodiment of the present invention
- FIG. 11 is a schematic diagram showing the combination of two upper and lower waveguide plates of the optical transmitter according to an embodiment of the present invention.
- FIG. 2 is a schematic structural view of a waveguide sheet manufactured according to a preferred embodiment of the present invention.
- the waveguide sheet 1 structurally includes a first surface 11 opposite to the first surface 11.
- the edges of the connection are the first positioning side 12 and the first stray light dissipation side 13; wherein the first positioning side 12 is formed by a microelectromechanical manufacturing process, so that the surface of the first positioning side 12 has microelectromechanical manufacturing
- the first surface feature produced by the program is a microelectromechanical manufacturing program feature that allows the first positioning side 12 to be used by the first light transmitter component 31 of the optical instrument to abut the first optical transmitter component 31 is positioned on the first positioning side 12.
- the first stray light dissipation side 13 is also formed by a microelectromechanical manufacturing process, so that the surface of the first stray light dissipation side 13 has a second surface feature produced by the microelectromechanical manufacturing process, which is also a micro The electromechanical manufacturing process feature, the first stray light dissipation side 13 is used as one side of the first stray light output port 14 of the spectrometer.
- the first positioning side 12 and the first stray light side 13 can be selectively fabricated by the same MEMS manufacturing process such that the first surface feature and the second surface feature have the same MEMS manufacturing program features.
- the first positioning side 12 and the first stray light dissipation side 13 are simultaneously formed by anisotropic etching, so that the first surface feature can be made.
- the same MEMS manufacturing program features as the second surface feature.
- the first positioning side 12 and the first stray light side 13 may also be selectively fabricated by different MEMS manufacturing processes, such that the first surface feature is different from the second surface feature. Different MEMS manufacturing process features.
- the first positioning side 12 is made by anisotropic etching, and the first stray light emitting side 13 is formed by electroforming, so that the first surface feature and the second surface feature are different; or both A non-isotropic etching is used, wherein the first positioning side 12 uses reactive ion etching, and the first stray light side 13 uses electron beam etching to make the first surface feature different from the second surface feature.
- the positioning side and the stray light dissipation side can be simultaneously or separately by an electron beam singly program, an ion etching process, a reactive ion etching process, a deep reactive ion etching process, a wet etching process. , lithography procedures, electroforming processes, nanoimprinting procedures or deviating procedures.
- the waveguide sheet 1 has a specific appearance pattern in conjunction with the optical path design of the optical lexicon; with reference to FIG. 3A, the first surface 11 of the waveguide sheet 1 is included according to the optical path design. a main optical path area 41 (area indicated by a halftone dot) and a non-main optical path area 42 (an area indicated by a non-network dot), wherein the main optical path area 41 is a path of the effective light L2 to be utilized by the optical transmitter, and must be
- the light beam L1 is accurately projected into the first optical unit 31 as a grating and as a photo sensor after entering the optical projector via the second optical pickup unit 32 or the like as a slit member.
- the primary optical path region 41 is defined by a plurality of spectrometer components of the optical language. For example, after light enters from the second light modulator assembly 32, it can be projected to the maximum extent of the first light modulator assembly 31, and the third pupil assembly 33 receives the light split by the first optical module 31. The maximum range of light.
- the optical lexicon component transmits the effective optical signal within the range of the main optical path region 41.
- the light passing through the non-primary optical path region 42 is a stray light that does not need to be utilized, which may be scattered light generated by a defect of the optical error detector component, or reflected light generated by a non-optical component, which may be reflected.
- each side of the waveguide sheet 1 is formed by a microelectromechanical manufacturing process.
- the geometry of the waveguide sheet 1 can be determined by the pattern used in the MEMS manufacturing process, such as the exposure development pattern. It should be noted that the waveguide sheet 1 in this embodiment
- the sides that are not used to locate the spectrometer assembly can have stray light removal effects as stray light dissipation sides, such as stray light dissipation sides 20.
- the first stray light dissipation side edge 13 is located in the non-main light path region 42, and any of the first stray light dissipation side edges 13 can leave the stray light and have the stray light removal. effect. If the first stray light dissipation side edge 13 is further fabricated by the MEMS manufacturing process, one end of the first stray light dissipation side edge 13 can accurately contact the boundary between the main light path region 41 and the non-main light path region 42. Thus, as much as possible, the stray light passing through the non-primary optical path region 42 can be removed via the first stray light output port 14, further improving the efficiency of stray light dissipation without affecting the transmission of the effective light L1.
- FIG. 3A also discloses the design of the intersection angle C of the stray light dissipation side, the intersection angle C of the stray light dissipation side is formed by the intersection of the two first stray light dissipation side edges 13, and the intersection angle C of the stray light dissipation side is Adjacent to the edge of the main optical path region 41 included in the waveguide sheet 1 in accordance with the optical path design.
- the first stray light-dissipating side 13 is formed by the microelectromechanical manufacturing process, thereby ensuring the accuracy of the position of the stray light dissipating side intersection angle C, by which it is accurately adjacent to the edge of the main optical path region 41, The stray light is allowed to exit as far as possible from the first stray light output port 14.
- FIG. 3B is a sectional structure including the section line AB in FIG. 2, and a schematic diagram assembled with another waveguide sheet; as shown in the figure, the photometer in this embodiment is included as another A first waveguide piece of a waveguide piece and a second waveguide piece 1 cut by a section line AB in FIG. 2 have a gap passage 23 therebetween.
- the light in the optical language can be repeatedly reflected and traveled in the gap channel 23, and the different spectrometer components can be optically coupled through the gap channel 23 between the upper and lower waveguide plates of the spectrometer, and the reflection mechanism thereof.
- the stray light that is required to be excluded from the optical transmitter may exit in the first stray light output port 14 located in the non-primary optical path region 42 in this embodiment.
- the first stray light dissipation side 13 is located in the non-main light path region 42 as one side of the first stray light output port 14.
- the first stray light output port 14 may be formed by forming the first stray light dissipation side 13 on one side of the waveguide sheet, or may be formed by hollowing out an opening in the single waveguide sheet, and the present invention is not particularly limited in its pattern.
- the present invention is not limited to providing the first stray light output port 14 only in one of the waveguide sheets, and the first waveguide sheet 1 and the second waveguide sheet 1 can be fabricated by the MEMS manufacturing process to form the first stray light dissipation side 13 Both have a first stray light output port 14.
- the present invention is not limited to providing the first stray light output port 14 only in one of the waveguide sheets, and the first waveguide sheet 1 and the second waveguide sheet 1 can be fabricated by the MEMS manufacturing process to form the first stray light dissipation side 13 Both have a first stray light output port 14.
- the 3B as an example, it further includes a second surface 15 connecting the first positioning side 12 and the first stray light dissipation side.
- the edge 13 is located on the opposite side of the first surface 11, and the second surface 15 has a polishing process characteristic generated by a polishing process and does not have a structure of a reflective layer. This second surface is not required to reflect light and therefore does not require polishing.
- the waveguide sheet manufactured by the preferred embodiment of the present invention is not limited to making only one single positioning side, but the corresponding positioning side is made according to the number of the optical component components used by the optical instrument.
- these optical detector components can be light sensors, gratings, slits, filters, light barriers, mirrors, focusing mirrors or quasi-planar mirrors.
- the first optical unit 31 in the preferred embodiment is simultaneously abutted against the first positioning side 12 and the second positioning. Side 16.
- the second positioning side 16 joins the first surface 11, and is also formed by a microelectromechanical manufacturing process, having a first surface feature of the microelectromechanical manufacturing process.
- the preferred embodiment further includes third positioning sides 17a, 17b for abutting the second optical unit 32 and the third optical component 33, the third positioning
- the side edges 17a, 17b are connected to the first surface 11, which are also formed by a microelectromechanical manufacturing process, having a first surface feature of the microelectromechanical manufacturing process, which allows multiple spectrometer components in the optical chirp instrument to have precise positioning surfaces. Can be countered to reduce compound tolerances.
- the first positioning side 12, the second positioning side 16 and the third positioning side 17a, 17b are separately fabricated in different processes in the MEMS manufacturing process, and each positioning side can also provide accurate optical component assembly. The ability to resist; and if it is completed in the same process, it has the advantage of being fast and more precise. For example, the relative accuracy of each side is higher in the same process, and it will not be derived from different processes. Alignment error.
- the number of side faces of the stray light can be as many as the positioning side, and it can form a plurality of stray light dissipation sides at different positions of the waveguide sheet by using the same or different microelectromechanical manufacturing processes, thereby forming Multiple stray light output ports.
- the so-called identical or different microelectromechanical manufacturing process means that different types of stray light dissipation sides can be made by using different types of microelectromechanical manufacturing processes. And it is not limited to complete all the production of the stray light side in the same process; in other words, as long as the stray light side is made by the MEMS manufacturing process, the stray light dissipation efficiency of the light meter can be achieved.
- the preferred embodiment shown in FIG. 2 is a second stray light dissipation side 18a having a first stray light dissipation side 13 connected to the first surface 11 and may have Unlike the second surface feature produced by the MEMS manufacturing process that forms the first stray light dissipation side 13, the second stray light dissipation side 18a serves as one side of the second stray light output port 19a of the optical lexicon.
- FIG. 3C is a schematic structural view of another preferred embodiment having a third stray light dissipation side 18b.
- the third stray light dissipation side 18b is connected to the first surface 11, which is not caused by The MEMS manufacturing process is generated by a knife cutting process.
- the third stray light dissipation side 18b has a third surface feature generated by a knife cutting process, and the third stray light dissipation side 18b is used as a light transmission.
- FIG. 3D is a schematic structural view of a preferred embodiment of the present invention, which discloses that the positioning side of the waveguide piece and the side of the stray light are not limited to a straight line, and the two can also be respectively It is formed into a non-linear pattern by a 4 ⁇ electromechanical manufacturing process.
- the first positioning side 12 is of a circular arc type, and when the first photometer assembly 31 as a grating is a Rowland circle, the first optical component unit 31 can be easily accessed.
- the second positioning side edge 12 of the waveguide sheet 1 is also positioned; the second optical light unit assembly 32 and the third optical language unit 33 are also respectively positionable on the arc-shaped third positioning side edges 17a, 17b.
- first stray light dissipation side 13 and the second stray light dissipation side edge 18a of the waveguide sheet 1 may also be non-linear patterns, which are different from the straight line pattern of the foregoing preferred embodiment.
- the light transmitter components 31-33 can be fabricated by a microelectromechanical process and have a Roland circular profile feature.
- Embodiments of the present invention are directed to a method of fabricating a waveguide sheet of a light-emitting device, wherein a MEMS pattern is first set in the step, and the MEMS pattern includes a first waveguide pattern of the optical panel It can be designed according to the spectrometer system to be fabricated, and a single or a plurality of waveguide sheets can be included in the pattern.
- the microelectromechanical manufacturing process is not limited to what type or process method, nor is it limited to form the positioning side and stray light at the same time. Dissipate the sides.
- the positioning side is used for the photo-detector component of the optical device to be positioned to be positioned on the positioning side, and the stray light-dissipating side is used as a side of the stray light output port.
- the MEMS manufacturing process used in the embodiments of the present invention includes non-isotropic etching, electroforming, nanoimprinting, or lift-off, but is not limited thereto, as long as it is Microelectromechanical manufacturing processes that allow microelectromechanical process materials to form microscale, or finer, three-dimensional structures.
- electroforming is to replicate the shape of the master by the extremely fine cell characteristics of ion deposition, and to construct an accurate three-dimensional structure
- nanoimprinting is to press the master or pattern into a conformal material. It will be deformed according to the pattern of the template, and then formed by UV exposure or heat treatment.
- the positioning side can be formed by reactive ion etching, ion etching, deep reactive ion etching, electron beam etching, photolithography or anisotropic wet etching.
- the stray light dissipates the sides, but is not limited to the several anisotropic etching procedures listed above.
- an anisotropic etching process is used as an operational embodiment.
- the positioning side and the stray light dissipation side made by the anisotropic etching process have anisotropic etching characteristics and have a good precision level. It is better than the machining precision level of using cutter or wire cutting, and can reach below 3um, so that the operation of various spectrometer components in the spectrometer can be performed as expected, and the correct analysis and measurement results can be completed.
- FIG. 4 to FIG. 5H is a first embodiment of a manufacturing method of a waveguide sheet of a photonic device, and a manufacturing method thereof includes:
- Step S10 forming a mask layer over a top surface of a substrate, and then patterning the mask layer;
- the substrate is a silicon wafer (or a substrate such as a sapphire substrate that has been polished)
- the waveguide piece is taken as an example. Since the silicon wafer has a good polishing quality, it is not necessary to further perform the polishing operation after the fabrication of the waveguide wafer, thereby reducing the number of processing steps and reducing the possibility of forming a lead angle in the structure.
- the substrate 60 has a top surface 601 and a back surface 602.
- the top surface 601 is provided with a mask layer 603, which may be a photoresist layer, a hard mask or a mask. After the MEMS pattern including the first waveguide pattern is set and the mask layer 603 is patterned, the patterned mask layer 603 may expose a region 604 to be processed of the top surface 601.
- a mask layer 603 which may be a photoresist layer, a hard mask or a mask.
- Step S11 etching the substrate anisotropically to form at least one anisotropic etching trench on the top surface; as shown in FIG. 5C, the substrate 60 is anisotropically etched, and the substrate 60 is to be processed.
- the region 604 forms an anisotropic etch trench 605 downwardly and an anisotropic etched surface 606 on both sides of the anisotropic etch trench 605; in other words, anisotropic etching of the substrate 60 and Instead of penetrating the substrate 60, the substrate 60 still has a backing layer 607 for bonding, and the non-isotropically etched surface 606 is to be used as a positioning side or stray light dissipation side of the contact light illuminator assembly.
- Step S12 removing the mask layer on the top surface of the substrate; that is, after the non-isotropic etching trench 605 and the non-isotropic etching surface 606 are processed, the mask layer 603 on the top surface 601 is further applied.
- the photoresist is removed by, for example, using a solvent such as acetone.
- Step S13 performing a coating process to form a coating layer above the top surface; that is, providing a coating layer 61 on the top surface 601 of the substrate 60 from which the mask layer 603 has been removed, and the coating layer 61 may be formed by evaporation.
- the coating layer 61 On the substrate 60, this is the top surface 601 of the selection substrate 60 as the first surface of the finished waveguide sheet, which has a reflective function.
- the coating layer 61 further includes an adhesion layer 611, a reflective layer 612, and a protective layer 613.
- the adhesion layer 611 is disposed on the top surface 601 of the substrate 60, which may be a titanium (Ti) layer;
- the reflective layer 612 is disposed on the adhesion layer (titanium layer) 611, which may be an aluminum (A1) layer, and That is, the reflective layer 110 that functions as a light reflecting light of the waveguide sheet;
- the protective layer 613 is disposed on the reflective layer (aluminum layer) 612, which may be a magnesium fluoride (MgF2) layer, and a protective layer (magnesium fluoride layer) 613 An antioxidant layer.
- the protective layer 613 can also be made of silicon dioxide.
- Step S14 performing a filming process, attaching a film to the top of the coating layer; as shown in FIG. 5E, after forming the coating layer 61 on the top surface 601 of the substrate 60, a film 62 is attached, that is, A dicing tape for temporary connection is attached to the first surface of the finished waveguide sheet.
- This step is to consider that the subsequent steps will separate the substrate 60 into a plurality of finished waveguide sheets. Therefore, in order to avoid scattering, the film is temporarily connected for temporary connection, which is advantageous for mass production. Selecting the film on the coating layer is to consider grinding to the other side.
- Step S15 performing a grinding process to polish a back layer of the substrate; that is, the substrate 60
- the back surface layer 607 is ground away to cause a trench bottom surface 608 of the anisotropic etching trench 605 to disappear, that is, to polish the opposite surface of the first surface as the finished waveguide sheet, so that the second surface has a grinding
- the feature is different from the structure in which the first surface has a reflective layer.
- the second surface does not need to reflect light, so that it is not necessary to perform a fine polishing process, as long as the back surface layer 607 disappears by rough grinding, so that the waveguide sheet product can be separated. As shown in FIG.
- 5G is a schematic view of a single structure of the finished waveguide sheet 63 after the film is removed, and the anisotropic etched surface 606 having an anisotropic etch feature can be used as a positioning side or a stray light side, for example.
- the substrate can be made into a waveguide sheet finished product 63 as shown in FIG. 5H, and the positioning side 606a is used for the spectrometer component of the optical lecturer to abut.
- the spectrometer assembly is positioned on the positioning side 606a and the stray light dissipation side 606b is used as one side of the stray light output port.
- the microelectromechanical process pattern includes the first waveguide pattern 64 of the polarimeter, but referring to FIG. 6B,
- the second waveguide sheet pattern 65 may further include at least one boundary between the second waveguide sheet pattern 65 and the first waveguide sheet pattern 64, thereby reducing the etching area and utilizing the same substrate 60 made of a silicon wafer.
- the microelectromechanical process pattern may further include a third waveguide pattern 66, which is different from the first waveguide pattern 64, so that the upper and lower waveguides in the optical transmitter are different.
- the upper and lower waveguide sheets can still be produced at one time.
- FIG. 7 to FIG. 9 are a second embodiment of a manufacturing method of a waveguide sheet of a photometer, and the manufacturing method thereof comprises:
- Step S20 forming a mask layer over a top surface of a substrate, and then patterning the mask layer; as shown in FIG. 8, the substrate 70 is a silicon wafer (or a sapphire substrate or the like has been polished)
- the processed substrate is used to make a finished waveguide piece, or an element that needs to provide a precise positioning function in the optical illuminator, and the waveguide piece is taken as an example.
- the substrate 70 has a plurality of regions 701 to be processed, and the periphery of the X-axis direction and the Y-axis direction of any of the regions 701 to be processed has a cutting pre-line 702 and is a plurality of regions.
- a patterned mask layer (which may be a photoresist layer, a hard mask or a mask) is disposed on the area to be processed 701, as in the previous embodiment, the setting is included in the etching machine
- the area to be processed 701 can have local processing patterns 703, 704, 705, 706.
- the partial processing patterns 703, 704, and 705 respectively adjacent to the at least one cutting pre-wire 702, and the partial processing pattern 706 for forming the stray light output port does not necessarily need to abut the cutting pre-wire 702.
- FIG. 8 is an illustration of one of the regions 701 to be processed.
- Step S21 anisotropically etching the substrate to form at least one anisotropic etching trench on the top surface; that is, performing an anisotropic etching process on the partial processing patterns 703, 704, 705, and 706 to cause the substrate 70
- a corresponding anisotropic etching trench is formed downward from the local processing patterns 703, 704, 705, 706, etc., and the non-isotropic direction can be made by polishing the back layer of the substrate 70 in combination with the step S15 of the previous embodiment.
- the etching trenches disappear, or in this step, the substrate 70 is directly penetrated through the anisotropic etching to form through-holes, and the inner side surfaces of the through-holes are anisotropic etching surfaces.
- the etched surface can be used as a surface for precise positioning of the contact optical component or as a stray light dissipation side. At this time, between the plurality of regions 701 to be processed of the substrate 70, the bonding is maintained by the cutting pre-wires 702 adjacent but not yet cut.
- Step S22 The mask layer on the top surface of the substrate is removed; that is, if there is a residual mask layer in the region other than the partial processing patterns 703, 704, 705, and 706, it is removed first.
- Step S23 performing a coating process to form a coating layer above the top surface; that is, providing a coating layer on the top surface of the substrate 70 from which the mask layer has been removed, the coating layer being vapor-deposited on the substrate
- the top surface of the substrate 70 is selected as the first surface of the finished waveguide sheet to have a reflective function
- the coating layer may have the same structural composition as the coating layer 61 shown in FIG. 5D, but is not limited thereto. Therefore, as long as it is a suitable material or structure capable of reflecting ability.
- Step S24 performing a filming process, attaching a film to a back surface of the substrate; that is, attaching a film on the back surface of the substrate 70, and the film serves as a temporary bonding function, similar to the film 62 shown in FIG. 5E, but
- the attached position can be different from the previous embodiment in consideration of avoiding contamination of the reflective layer, and is attached to the back surface of the substrate 70, that is, the dicing tape for temporary connection is attached to the second surface as the finished product of the waveguide sheet.
- the first surface and the second surface are respectively located on opposite sides of the finished waveguide sheet. However, if the pattern distribution of the area to be processed 701 allows the waveguide sheet to be finished in the cutting process described later This filming program can be omitted if it does not arbitrarily spread.
- Step S25 Perform a one-cutting process to cut the substrate; that is, on the substrate 70, use a cutter or a cutting line for mechanical cutting processing for each cutting pre-wire 702.
- each of the regions to be processed 701 can be separated and formed into a plurality of waveguide sheet products 71 as shown in Fig. 9, and the waveguide sheet product 71 forms a cutting surface 707 with respect to the cutting process.
- the cut surface 707 formed by the cutting process is not flat and is not suitable for use as a target for contact positioning of the light transmitter component, but can still be used as a stray light dissipation side.
- the waveguide sheet finished product 71 produced in this embodiment is processed by an anisotropic etching process to form an anisotropic etched surface 708 having an accuracy level of 3 ⁇ m or less.
- the anisotropic etched surface 708 can be used as a waveguide sheet finished product 71.
- the position of the spectrometer assembly is accurately located, and the opening formed by the original partial processing pattern 706 can be used as the stray light output port 710, and the inner side of the spectroscopic output 706 is the stray light dissipation side 709, which is to complete the stray light by using a single waveguide piece.
- the implementation of the output port settings since the waveguide sheet finished products 71 can be bonded together, they are not scattered in the cutting process. Finally, the film can be finished by tearing off the film.
- the substrate is subjected to an anisotropic etching process, such as reactive ion etching, ion etching, deep reactive ion etching (DRIE;), electron beam etching, photolithography or anisotropic wetness.
- an anisotropic etching process such as reactive ion etching, ion etching, deep reactive ion etching (DRIE;), electron beam etching, photolithography or anisotropic wetness.
- a reactive ion etching method a silicon wafer is placed in a reaction chamber as a substrate, and then carbon tetrafluoride is introduced as an etching gas, and after the voltage is applied, the etching gas is plasma-formed to form a difluoro ion and two.
- An etching source such as a fluorinated carbon ion is used, and these etching seed sources are combined with the surface of the substrate to react, and the generated products such as silicon tetrafluoride or carbon monoxide can be detached in the form of a gas to achieve an etching effect.
- the addition of an argon ion beam greatly increases the rate of etching because it breaks the chemical bonding of silicon atoms on the surface of the substrate, making silicon tetrafluoride easier to produce.
- the present invention can also use other etching gases to decompose the etching gas to generate a free radical by plasma, and cooperate with the ion beam to cause the substrate to react with free radicals more quickly to form a gaseous by-product.
- Deep reactive ion etching is performed by high concentration plasma and etch-deposited polysilicon
- the step of exchanging the protective layer enables the substrate to form a high aspect ratio structure.
- the etch-deposited polysilicon protective layer is formed using sulphur hexafluoride and argon at a bias of -5 to -30 V to cause the cation to generate a plasma and accelerate it to be nearly perpendicular to the substrate to produce an etch.
- polymerization is started.
- octafluorocyclobutane and sulfur hexafluoride a surface of the substrate is exposed to a layer of carbon difluoride.
- a bias is applied after the polymerization to create an ion bombardment to remove the vertical protective layer leaving only the protective layer of the sidewall.
- the deep reactive ion etching of the substrate can be completed by repeating the etching-protecting sidewall cycle.
- Electron beam etching uses an electron gun to generate an electron beam, which does not diffract at the atomic scale, and can precisely cut out the precise flat surface required to achieve the effect of anisotropic etching.
- a chemical etching solution may be selected, and when the mask layer is formed on the top surface of the substrate, the isotropic etching property of the etching liquid is considered together, and the compensation pattern is designed to obtain the same non-isotropic property.
- the effect of etching Photolithography, in combination with exposure, development, and etching techniques, forms a sophisticated etched structure on a substrate through sophisticated dimensional precision control and composite photographic techniques.
- the MEMS manufacturing process employed in the present invention is not limited to the above several methods.
- FIG. 10 further discloses the technical features that can be structurally obtained when a waveguide sheet having a fine contact positioning surface is fabricated by a microelectromechanical manufacturing process.
- the substrate 80 is partially shielded by the mask layer 81 and can be processed by a microelectromechanical manufacturing process to form an anisotropic etched slope 82 having a bevel angle as shown by the bevel angle ⁇ greater than 90. , but not limited, less than 90.
- This embodiment can be matched against a light transmitter assembly having a beveled form.
- the present invention also allows the upper and lower waveguide sheets of the optical transmitter to be fabricated using a microelectromechanical manufacturing process, and is not limited to being produced in the same manufacturing process, nor is it limited to using the same material.
- FIG. 11 is a schematic diagram of a combination of the first waveguide sheet 1 above the optical language meter and the second waveguide sheet 1 with a gap passage 23 therebetween.
- the first waveguide sheet 1 and the second waveguide sheet 1 in this embodiment can respectively position different light transmitter components; as shown, the first photo-viewer assembly 31 is abutted against the first waveguide sheet.
- the first locator side 12 is positioned, and the second illuminator assembly 32 is positioned on the third locating side 17a of the second waveguide sheet 1.
- Two different spectrometer components can be positioned by different waveguide sheets, respectively.
- the first waveguide sheet has a first stray light dissipation side 13 formed by an electromechanical manufacturing process for use as one side of the stray light output port 14a, and the second waveguide sheet 1 may
- the second stray light dissipation side edge 18a has the other side of the stray light output port 14a, and the two waveguide sheets together constitute a structure of the stray light output port.
- the second waveguide sheet 1 can also be fabricated using conventional machining, but in this case each spectrometer assembly needs to be abutted against the first waveguide sheet, rather than having the second optical component 32 positioned in the second embodiment.
- Waveguide sheet 1. precise positioning of the sides can be made for only a single waveguide piece, and all of the optometrists can be placed against the waveguide, while the other is used only for reflecting light, not for abutting purposes.
- the spectrometer component positioned by the waveguide sheet is a light barrier, it can function like a stray light dissipation side, because the side of the stray light dissipates the exit of the stray light, and the optical strip is Can block the stray light.
- the precise positioning of the optical barrier is also effective in solving the problem of stray light compared to machining.
- the optical component of the waveguide sheet such as the first waveguide sheet 1 and the first optical axis assembly 31, can be used by using the same material. When the thermal expansion and contraction occurs, the positioning accuracy is not lowered because of the difference in thermal expansion coefficient between the components.
- the embodiments of the present invention disclose in detail a method for fabricating a waveguide sheet of a photonics instrument, and a structure thereof, which are based on an already polished silicon wafer and combined with exposure and development technology. And the microelectromechanical manufacturing process to treat the silicon wafer by an anisotropic etching process to form a waveguide piece with precise positioning capability.
- the precision positioning of the waveguide piece not only allows the optical component assembly to be assembled.
- the resulting misalignment is reduced, ensuring the quality of the optical signal transmission and the accuracy and stability of the path.
- the stray light output port formed by the side of the stray light allows the stray light to efficiently leave the optical language instrument.
- the embodiment of the present invention undoubtedly provides a spectrometer for the economic and application value, and the manufacture of the waveguide sheet of the optical language device. Method and its structure.
- the protective layer is made of:
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Abstract
公开了一种光谱仪、光谱仪的波导片的制造方法及其结构。在制造方法中，利用微机电制造程序使硅晶圆形成至少一个波导片（1），波导片（1）具有至少一定位侧边（12）以及至少一杂光散逸侧边（13）。光谱仪组件（31）可精确定位于定位侧边（12），减少光谱仪组件间于抵靠波导片时存在的错位现象，且杂光经由杂光散逸侧边（13）而离开，减少噪音误差，可提升光谱仪的感度和解析度。
Description
光谱仪、 光谱仪的波导片的制造方法及其结构
【技术领域】
【0001】 本发明关于一种光谱仪 (Spectrometer)构成， 尤指包含一种经 由微机电制造程序所产生具有精密接触定位面的波导片（Waveguide), 此波 导片得以令与之接触的光谱仪组件能被准确定位。
【先前技术】
【0002】 按， 光 i脊仪是一种应用光学原理将复杂的光解析为光谙的仪 器， 其主要用来量测样品的吸收、 穿透或反射， 由于光语分析的特点包括 非破坏性、 具化学鉴别力、 具波长变通性、 灵敏度高及分析速度快， 因此 使得光 i普仪广泛应用于冶金、 地质、 石油化工、 医药卫生、 环境保护等领 域， 更是军事侦察、 宇宙探索、 资源和水文勘测等所倚重的方法技术与仪 器设备。
【0003】现有光傳仪经微型化后， 以中华民国新型专利 M370071为例， 其所揭示的微光 仪的构件组成如图 1所示， 微光 仪 90内具有空间 91 以设置上下成对的反射片作为波导片， 此成对波导片之间具有间隙通道供 光线行进。 微光语仪 90亦包含了多个光谱仪组件， 例如入射狭缝装置 92、 微型光栅 93与线型侦测器 94。 当入射光从入射狭缝装置 92进入， 接着会 于波导片之间的间隙通道前进， 并接续投射于微型光栅 93 进行分光， 而 分出来各波长的光再投射于线型侦测器 94。 最后， 线型侦测器 94可经由 光电转换而使接收到的光谱线转换为电流， 再经外部元件分析而获得相应 光谱线强度的信息。
【0004】 在前述的微型光语仪当中， 各个光 i普仪组件在组装上需要通 过定位而确保仪器成品的精确性； 然而现有的微型光傳仪并没有特别设置 定位处， 而是通过机械加工成型的壳体让光豫仪组件承靠， 此些经线切割 程序而形成的承靠处并没有精确定位的能力， 导致组装后的微光傳仪缺乏 精确性。
【0005】 进一步而言， 现有的微光谱仪是使用线切割程序加工铝片而 形成承靠处， 但此种承靠处会因线切割过程中的电火花烧灼而具有毛边、 不平整等特征， 精确定位的能力很有限。 且由于线切割加工方式及后续的 抛光作业等的机械加工精度约为 20〜30um，会累积复合公差，导致狭缝件、 光栅等光语仪组件的设置有错位现象， 严重影响光投射的准确度与接收精 确度， 进而导致光讲仪所分析、 量测的光信号产生精确度的问题。
【0007】 再者， 现有微光潘仪当中的波导片于线切割时需冷却伴随切 割液， 使得波导片表面被污染， 需后续进行清洗工序， 将增加制程工序及 制造成本， 显不符制造经济效益； 又于线切割加工后的抛光作业， 将使得 波导片容易产生导角， 亦影响了组装的精确性， 不利于微光傳仪使用时的 光投射传递与处理运作。 因此， 如何解决现有光谱仪组件， 特别是波导片 于制造与安装使用精确度的缺失， 应为业界或有智的士应努力解决、 克服 的重要课题。
【0008】 缘此， 本发明人有鉴于现有光谱仪相关组件其制造与精密组 配使用的缺失问题及其定位结构设计上未臻理想的事实， 本案发明人即着 手研发其解决方案， 希望能开发出一种更具定位精密性、 光精准传输性符 合制造经济效率的光傅仪与其波导片的制造方法及其结构， 以促进此业的 发展， 遂经多时的构思而有本发明的产生。 【发明内容】
【 0009】 本发明的主要目的在提供一种光旙仪的波导片的制造方法， 其经由微机电制造程序， 能使所生产的波导片具有精密的接触定位面供光 錯仪组件抵靠， 能降低错位现象，确保光信号传输的品质及路径的精准性、 稳定性， 进而达到光语仪极佳的分析、 量测效果者。
【0010】 本发明的另一目的在提供一种光谱仪的波导片的制造方法， 其能使波导片的制造具有加工时间短的效率性， 且能消除其制造的形状限 制， 能积极配合光 仪的光路设计而精确定位光 仪组件。
【0011】本发明的再一目的在提供一种光语仪的波导片的结构，其配合
光旙仪的光路设计， 可使非主要光路上的杂光从杂光输出口离开， 降低其 在光谱仪的两片波导片间持续行进的可能， 藉此减少光谱仪的噪音误差。
【0012】 本发明的更一目的在提供一种光" i普仪， 其在结构组成上包含 前述具有精密的接触定位面的波导片， 使其所具有的光傳仪组件被准确定 位， 并且得以让杂光逸散， 整体改善光旙仪的感度和解析度。
【0013】 为了达到上述的目的， 本发明揭示了一种光傳仪、 光傅仪的 波导片的制造方法及其结构， 其在制造波导片的方法上， 包含步骤： 设定 一微机电制程图案， 该微机电制程图案包括该光谱仪的一第一波导片图 案； 以及依据该微机电制程图案进行一微机电制造程序以产生至少一波导 片， 其中上述波导片具有由该微机电制造程序所形成的至少一定位侧边与 至少一杂光散逸侧边， 上述定位侧边用以供该光傳仪的一光傳仪组件抵靠 而使该光傳仪组件定位于上述定位侧边， 上述杂光散逸侧边用以作为一杂 光输出口的一侧。 通过上述的制造方法， 即可获得具有高度定位精密性的 波导片， 得用于搭配光傳仪组件而组装高品质的光语仪， 突破困扰相关业 者的技术瓶颈。
【图式筒单说明】
【0014】 图 1为先前技术的微光谱仪内部结构部分示意图；
图 2为本发明的一实施例所制造的波导片于应用时的结构示意图； 图 3 A为本发明的一实施例中， 波导片依据光路设计而包含主要光路 区以及非主要光路区的示意图；
图 3B为本发明的一实施例所组装的光讲仪剖视结构示意图； 图 3C为本发明的另一实施例所使用刀切制作波导片的杂光散逸侧边 的结构示意图；
图 3D为本发明的再一实施例制作非直线的定位侧边以及杂光散逸侧 边的结构示意图；
图 4为本发明的第一方法实施例的步骤流程图；
图 5A 5H为本发明第一方法实施例中， 基板的结构变化流程图； 图 6A 6C为本发明一实施例中， 使用硅晶圓为基板的示意图； 图 7为本发明第二方法实施例的步骤流程图；
图 8为本发明第二方法实施例使用硅晶圆为基板的区域划分示意图； 图 9为本发明第二方法实施例所制造的波导片结构示意图；
图 10 为本发明一实施例中， 制作非等向性蚀刻斜面的结构示意图； 以及 图 11为本发明一实施例中，光傳仪的上、下两片波导片的组合示意图。
【实施方式】
【0015】 为使本发明的特征及所达成的功效有更进一步的了解与认识， 谨佐以较佳的实施例及配合详细的说明， 说明如后：
【0016】请参阅图 2, 其为本发明一较佳实施例所制造的波导片的结构 示意图； 如图所示， 波导片 1在结构上包含了第一表面 11 , 与第一表面 11 相连接的边缘为第一定位侧边 12 以及第一杂光散逸侧边 13; 其中的第一 定位侧边 12是由微机电制造程序所形成， 因此第一定位侧边 12的表面具 有微机电制造程序所产生的第一表面特征， 为一种微机电制造程序特征， 使第一定位侧边 12可用以供光豫仪的第一光傳仪组件 31抵靠， 而使第一 光傳仪组件 31定位于第一定位侧边 12。
【0017】 第一杂光散逸侧边 13亦是由微机电制造程序所形成， 因此第 一杂光散逸侧边 13 的表面具有微机电制造程序所产生的第二表面特征， 同样为一种微机电制造程序特征， 此第一杂光散逸侧边 13 是用以作为光 谱仪的第一杂光输出口 14的一侧。 上述第一定位侧边 12与第一杂光散逸 侧边 13 可选择通过同一道的微机电制造程序制作， 使第一表面特征与第 二表面特征具有相同的微机电制造程序特征。 例如利用非等向性蚀刻同时 形成第一定位侧边 12与第一杂光散逸侧边 13， 如此就可使第一表面特征
与第二表面特征具有相同的微机电制造程序特征。 在其他实施例中， 上述 第一定位侧边 12与第一杂光散逸侧边 13也可选择通过不同的微机电制造 程序制作， 使第一表面特征与第二表面特征不相同， 两者具有不同的微机 电制造程序特征。 例如利用非等向性蚀刻制作第一定位侧边 12, 以及利用 电铸制作第一杂光散逸侧边 13，如此就可使第一表面特征与第二表面特征 不相同； 或者是在两者都使用非等向性蚀刻， 而其中的第一定位侧边 12 使用反应式离子蚀刻， 第一杂光散逸侧边 13 则使用电子束蚀刻， 使第一 表面特征与第二表面特征不相同。 换言之， 在本发明的实施例中， 定位侧 边以及杂光散逸侧边可同时或分别由电子束独刻程序、 离子蚀刻程序、 反 应式离子蚀刻程序、 深反应式离子蚀刻程序、 湿蚀刻程序、 光刻程序、 电 铸程序、 纳米压印程序或掀离程序所形成。
【0018】 此较佳实施例中， 波导片 1 是配合了光语仪的光路设计而具 有特定的外观样式； 请辅以参考图 3A, 此波导片 1的第一表面 11依据光 路设计而包含一主要光路区域 41(网点表示的区域)以及非主要光路区域 42(非网点表示的区域)， 其中的主要光路区域 41是光傳仪所预设要利用的 有效光 L2的行径路线， 必须让光线 L1在经由作为狭缝件的第二光 ϊ普仪组 件 32 或类似的光源组件进入光讲仪内后， 精确地投射于作为光栅的第一 光借仪组件 31以及作为光感测器的第三光錯仪组件 33上； 换言之， 主要 光路区域 41 是由光语仪的多个光谱仪组件所定义。 举例来说， 光线自第 二光傳仪组件 32进入后， 其可投射于第一光傳仪组件 31的最大范围， 以 及第三光旙仪组件 33接收第一光借仪组件 31所分光的光线的最大范围。 光语仪组件是于此主要光路区域 41 的范围内进行有效光信号的传输。 而 行经非主要光路区域 42 的光线则是不需利用的杂光， 其可能是来自于光 錯仪组件缺陷所产生的散射光， 或者是非光语仪组件产生的反射光， 其可 能在经过反射后仍被第三光 i普仪组件 33 所接收， 为造成光傳仪误差的杂 光， 因此有必要通过杂光输出口的设计而让杂光能在被第三光傳仪组件 33 接收前离开。 故如图 3A所示， 在本实施例中， 波导片 1 的各边都是采用 微机电制造程序所形成。 微机电制造程序所釆用的图形， 例如曝光显影图 案， 就可以决定波导片 1的几何形状。 需一提的是， 本实施例中波导片 1
中没有用来定位光谱仪组件的侧边都可以作为杂光散逸侧边而具有杂光 削除的效果， 例如杂光散逸侧边 20。 再从另一角度来看， 第一杂光散逸侧 边 13是位于非主要光路区域 42,此第一杂光散逸侧边 13的任一区段都可 让杂光离开而具有杂光削除的效果。 而若进一步通过微机电制造程序制作 此第一杂光散逸侧边 13 , 可使第一杂光散逸侧边 13的一端精确地接触主 要光路区域 41与非主要光路区域 42之间的边界， 藉此而尽可能地在让行 经非主要光路区域 42的杂光能够经由第一杂光输出口 14离开， 在不影响 有效光 L1的传输之下， 进一步地提升杂光散逸的效率。
【0019】图 3A亦揭示了杂光散逸侧边交角 C的设计， 此杂光散逸侧边 交角 C为两个第一杂光散逸侧边 13相交而形成， 且杂光散逸侧边交角 C 是相邻于波导片 1依据光路设计而包含的主要光路区域 41的边缘。 于此， 基于第一杂光散逸侧边 13 是由微机电制造程序所形成， 因此可确保杂光 散逸侧边交角 C的位置的精确性， 通过其准确相邻于主要光路区域 41的 边缘， 得以让杂光尽可能地由第一杂光输出口 14离开。 【0020】请辅以参考图 3B, 其为包含图 2中的剖面线 AB的切面结构， 以及搭配另一波导片组装的示意图； 如图所示， 此实施例中的光 仪包含 了作为另一波导片的第一波导片 Γ以及图 2中经剖面线 AB切过的第二波 导片 1， 两个波导片中间具有一间隙通道 23。 在此结构中， 光语仪中的光 线可在间隙通道 23 反复反射并行进， 并让不同的光谱仪组件能够通过光 谱仪上、 下波导片之间的间隙通道 23 达成光学耦接， 其反射的机制是通 过第一波导片 Γ以及第二波导片 1 当中， 分别位于其第一表面 11 的反射 层 110而达成。 承前所述， 光傳仪当中所需排除的杂光于本实施例中， 可 在经由位于非主要光路区域 42的第一杂光输出口 14离开。 第一杂光散逸 侧边 13即是位于非主要光路区域 42,用以作为第一杂光输出口 14的一侧。 第一杂光输出口 14可通过在波导片的一侧制作第一杂光散逸侧边 13而形 成， 也可通过在单一波导片当中镂空设置开口而形成， 本发明并不特别限 定其样式。 另外， 本发明不限制仅于其中一个波导片设置第一杂光输出口 14， 第一波导片 1，以及第二波导片 1都可通过微机电制造程序制作第一杂 光散逸侧边 13而使两者都具有第一杂光输出口 14。
【0021】另外， 在单一波导片的结构中， 以图 3B中的第二波导片 1为 例， 其更包含一第二表面 15， 其连接第一定位侧边 12与第一杂光散逸侧 边 13 , 位于第一表面 11的对向侧， 此第二表面 15具有一研磨程序所产生 的研磨制程特征， 并不具有反射层的结构。 此第二表面并不需要用于反射 光线， 因此不需作抛光处理。
【 0022】 本发明于一较佳实施例所制造的波导片并不限制只制作单一 一个定位侧边， 而是依光潘仪所使用的光讲仪组件数量而制作相对应的定 位侧边， 以降低复合公差， 这些光錯仪组件可为光感测器、 光栅、 狭缝件、 滤光片、 光挡片、 反射镜、 聚焦镜或准平面镜等。 如图 2所示， 单一光谱 仪组件可抵靠的定位侧边可不只一个， 例如此较佳实施例中的第一光豫仪 组件 31是同时抵靠于第一定位侧边 12以及第二定位侧边 16。第二定位侧 边 16连接第一表面 11， 且也是由微机电制造程序所形成， 具有微机电制 造程序的第一表面特征。 藉由第一定位侧边 12以及第二定位侧边 16同时 供第一光 仪组件 31定位，可使第一光谱仪组件 31于 X轴及 Y轴方向上 都获致精确定位的效果。
【0023】 更进一步而言， 此较佳实施例更包含了用以抵靠第二光豫仪 组件 32和第三光语仪组件 33的第三定位侧边 17a、 17b, 此些第三定位侧 边 17a、 17b连接第一表面 11， 也都是由微机电制造程序所形成， 具有微 机电制造程序的第一表面特征， 可以让光 Ϊ脊仪当中的多个光谱仪组件皆有 精确定位面可抵靠， 以降低复合公差。 第一定位侧边 12、 第二定位侧边 16以及第三定位侧边 17a、 17b若是于微机电制造程序中的不同道制程所 分别制作完成， 各个定位侧边也能提供光傅仪组件精确抵靠的能力； 而若 是在同一道制程中制作完成， 则兼具有制作快速且更为精准的优点，例如， 在同一道制程中各边的相对精准度较高， 不会衍生不同道制程的对位误 差。
【0024】 杂光散逸侧边的数量可如同定位侧边而不仅只有一个， 其可 于波导片的不同位置， 使用相同或不相同的微机电制造程序形成多个杂光 散逸侧边， 进而形成多个杂光输出口。 此所谓相同或不相同的微机电制造 程序， 是指可利用不同类型的微机电制造程序制作不同的杂光散逸侧边，
并且不限定是在同一道制程中完成所有的杂光散逸侧边的制作； 换言之， 只要是杂光散逸侧边有利用微机电制造程序参与制作， 都可对光 i普仪的杂 光散逸效率有所改善。 例如图 2所示的较佳实施例即是具有第一杂光散逸 侧边 13以外的第二杂光散逸侧边 18a, 此第二杂光散逸侧边 18a连接第一 表面 11 , 并可具有不同于形成第一杂光散逸侧边 13的微机电制造程序所 产生的第二表面特征， 第二杂光散逸侧边 18a用以作为光语仪的第二杂光 输出口 19a的一侧。
【0025】请参考图 3C, 其为具有第三杂光散逸侧边 18b的另一较佳实 施例的结构示意图， 此第三杂光散逸侧边 18b连接第一表面 11 , 其并非由 是由微机电制造程序所产生， 而是通过刀切程序所形成， 此第三杂光散逸 侧边 18b具有刀切程序所产生的第三表面特征， 第三杂光散逸侧边 18b用 以作为光傳仪的第三杂光输出口 19b的一侧。
【0026】请参考图 3D， 其为本发明再一较佳实施例的结构示意图， 其 揭示了波导片的定位侧边以及杂光散逸侧边为并不局限为一直线， 两者也 可分别通过 4敖机电制造程序形成为一非直线图形。 如图所示， 第一定位侧 边 12 为圓弧型， 可在作为光栅的第一光 仪組件 31 为罗兰圓 (Rowland circle)时， 让第一光语仪组件 31在得以较方便地抵靠于波导片 1的第一定 位侧边 12; 第二光讲仪组件 32和第三光语仪组件 33也可分别定位于圆弧 型的第三定位侧边 17a、 17b。 另外， 波导片 1的第一杂光散逸侧边 13和 第二杂光散逸侧边 18a也可为非直线图形， 不同于前述较佳实施例的直线 样式。 在图 3D中， 光傳仪组件 31 ~ 33可由微机电制程制作而具有罗兰圓 轮廓特征。
【0027】 本发明的实施例于光 i普仪的波导片的制造方法， 其于步骤上 可先设定一微机电制程图案， 此微机电制程图案包括光潘仪的一第一波导 片图案， 其可依照所要制作的光谱仪系统而作相对应的设计， 且图案当中 可包含单一或多数个波导片。 接着， 再依据上述微机电制程图案进行微机 电制造程序以产生至少一波导片， 其中上述波导片具有由微机电制造程序 所形成的至少一定位侧边与至少一杂光散逸侧边， 此微机电制造程序不限 定为何种类型或是制程方法， 也不限定同时或是分别形成定位侧边与杂光
散逸侧边。 上述定位侧边用以供该光讲仪的光讲仪组件抵靠而使其定位于 上述定位侧边， 上述杂光散逸侧边则是用以作为杂光输出口的一侧。
【0028】 本发明的实施例当中所运用的微机电制造程序包含了非等向 性蚀刻、 电铸、 纳米压印或掀离（lift-off)等技术手段， 但并不限于此， 只要 是让微机电制程材料得以形成微米级、 或更精细的立体结构的微机电制造 程序皆可。 其中， 电铸是通过离子沉积的极细微的单元特性而复制母模的 形状， 而建构出精确立体结构； 纳米压印则是将母模或图样压入一种保形 材料中， 这种材料将按照范本的图形产生变形， 再经过紫外曝光或者热处 理的方法就可以使其成形， 不只可以复制 X轴、 Y轴方向的图形， 还可以 在 Z轴方向上压出台阶和轮廓线的结构， 使精确立体结构成形； 而掀离则 是在已具有图案化光阻的表面上上蒸镀金属， 再将光阻去除， 使光阻上的 金属脱离， 留下具有特定图案的金属， 具有精密的立体结构。 而在非等向 性蚀刻的处理上， 则可通过反应式离子蚀刻、 离子蚀刻、 深反应式离子蚀 刻、 电子束蚀刻、 光刻或非等向性湿蚀刻等方法程序， 形成定位侧边以及 杂光散逸侧边， 但并不限定于上述所列举的几个非等向性蚀刻程序。 以下 系以非等向性蚀刻程序为操作上的实施例， 经此非等向性蚀刻程序所制作 的定位侧边以及杂光散逸侧边具有非等向性蚀刻特征， 并且具有良好的精 度等级， 优于使用刀具或线切割的机械加工精度水准， 可达到 3um以下， 让光谱仪当中的各式光谱仪组件运作效果能如预期发挥， 完成正确的分 析、 量测结果。
【0029】请参阅图 4至图 5H, 其为光讲仪的波导片在制造方法的第一 实施例， 其制造方法包括：
(1) 步骤 S10: 形成一遮罩层于一基板的一顶面上方，再图案化该遮罩 层； 基板为一硅晶圓（或如蓝宝石基板等已经过抛光处理的基板)， 用以待 制成波导片成品， 或是光谱仪内需提供精确定位功能的元件， 于此以波导 片为例。 由于硅晶圓已具有良好的抛光品质， 因此将的制作为波导片后不 需要再进一步为抛光作业， 得以减少加工工序并降低于结构上产生导角的 可能性。 如图 5A所示， 基板 60具有相对的一顶面 601及背面 602, 顶面 601 上先设有遮罩层 603， 其可为光阻层、 硬遮罩或光罩， 在利用蚀刻机
台所设定包括有第一波导片图案的微机电制程图案而将遮罩层 603图案化 处理后， 图案化的遮罩层 603可暴露出顶面 601的一待加工区域 604。
(2) 步骤 S11 : 非等向性蚀刻基板，使顶面形成至少一非等向性蚀刻沟 槽； 如图 5C所示， 于基板 60进行非等向性蚀刻加工， 基板 60会由待加 工区域 604向下形成一非等向性蚀刻沟槽 605 , 以及位于非等向性蚀刻沟 槽 605两侧边的非等向性蚀刻面 606; 换言之， 对基板 60的非等向性蚀刻 加工并未穿透基板 60， 而是使基板 60仍具有一用以连结的背面层 607， 而非等向性蚀刻面 606则待作为接触光普仪组件的定位侧边或杂光散逸侧 边。
(3) 步骤 S12:去除基板顶面上的遮罩层；即于非等向性蚀刻沟槽 605、 非等向性蚀刻面 606加工完成后，再将顶面 601上的遮罩层 603予以去除， 例如使用丙酮等剂料清洗光阻剂。
(4) 步骤 S13 : 进行一镀膜程序， 形成一镀膜层于顶面上方； 即于基板 60已去除遮罩层 603的顶面 601上设置一镀膜层 61 , 镀膜层 61可以蒸镀 方式形成于基板 60上， 此为选择基板 60的顶面 601作为波导片成品的第 一表面， 使其具有反射功能。 如图 5D所示， 镀膜层 61进一步包括有一附 着层 611、 反射层 612及保护层 613。 其中附着层 611设于基板 60的顶面 601上， 其可为一钛 (Ti)层； 反射层 612设于附着层 (钛层 )611上， 其可为 一铝 (A1)层， 且其即为前述发挥波导片反射光线功能的反射层 110; 保护层 613设于反射层 (铝层 )612上， 其可为一氟化镁 (MgF2)层， 保护层 (氟化镁 层) 613作为一抗氧化层。 保护层 613也可使用二氧化硅制作。
(5) 步骤 S14: 进行一贴膜程序， 贴附一贴膜于镀膜层上方； 如图 5E 所示， 基板 60的顶面 601上经形成镀膜层 61后， 贴设有一贴膜 62 , 也就 是在作为波导片成品的第一表面上贴附暂时连接用的切割胶带。 此步骤是 考量到后续的步骤会使基板 60 分离为多个波导片成品， 因此为了避免散 落而先行贴膜作暂时连接， 利于批量制造。 选择贴膜于镀膜层上则是考量 到另一面要进行研磨。
(6) 步骤 S15: 进行一研磨程序， 研磨基板的一背面层； 即将基板 60
的背面层 607予以磨除，使非等向性蚀刻沟槽 605的一沟槽底面 608消失， 也就是针对作为波导片成品的第一表面的对向面进行研磨， 使此第二表面 具有研磨特征， 相异于第一表面具有反射层的结构。 且此第二表面并不需 要反射光线， 因此不需要做精细的抛光处理， 只要粗略地研磨而使背面层 607消失， 使波导片成品得以分离即可。 如图 5F所示， 经前述多道加工工 序处理后的基板在其背面层被研磨后， 原将快速分开成多数个波导片成品 63 , 但由于波导片成品 63之间已以贴膜 62予以连结， 因此尚不至于研磨 背面层的工序中散开， 便于整理波导片成品 63。
【0030】 图 5G为波导片成品 63于移除贴膜后的单体结构示意图， 其 具有非等向性蚀刻特征的非等向性蚀刻面 606可作为定位侧边或杂光散逸 侧边， 例如在依据最初所设定的微机电制程图案并经上述步骤加工后， 可 将基板制成如图 5H所示的波导片成品 63，其定位侧边 606a用以供光讲仪 的光谱仪组件抵靠而使光谱仪组件定位于上述定位侧边 606a, 并让杂光散 逸侧边 606b用以作为杂光输出口的一侧。
【0031】请参考图 6A, 于设定微机电制程图案的步骤中， 如前一较实 施例所述， 微机电制程图案包括光脊仪的第一波导片图案 64 , 不过参考图 6B, 其可更包括第二波导片图案 65 , 此第二波导片图案 65与第一波导片 图案 64 共用至少一边界， 可藉此缩小蚀刻面积， 并且能利用同一片以硅 晶圓为材料的基板 60 制造更多片的波导片， 同时也可以使开口率下降， 提高蚀刻品质。 图 6C则是揭示微机电制程图案可更包括第三波导片图案 66 , 此第三波导片图案 66不同于第一波导片图案 64 , 而得以在光傳仪中 的上、 下波导片是不同图案时， 仍可以一次生产上、 下波导片。
【0032】请参阅图 7至图 9, 其为光旙仪的波导片在制造方法的第二实 施例， 其制造方法包括：
(1) 步骤 S20: 形成一遮罩层于一基板的一顶面上方，再图案化该遮罩 层； 如图 8所示， 基板 70为一硅晶圓（或如蓝宝石基板等已经过抛光处理 的基板)， 用以待制成波导片成品， 或是光讲仪内需提供精确定位功能的元 件， 于此以波导片为例。 基板 70具有多数个待加工区域 701 , 而任一待加 工区域 701的 X轴方向及 Y轴方向的周边上具有切割预线 702而为多个区
块； 且待加工区域 701上设有一经图案化处理的遮罩层 (其可为光阻层、硬 遮罩或光罩)， 如同前一实施例， 在利用蚀刻机台所设定包括有第一波导片 图案的微机电制程图案而将遮罩层图案化处理后， 可使待加工区域 701具 有局部加工图案 703、 704、 705、 706。 其中的局部加工图案 703、 704、 705 分别邻接至少一切割预线 702 , 而作为形成杂光输出口之用的局部加 工图案 706则不一定需邻接切割预线 702。 图 8是以其中一个待加工区域 701为举例示意。
(2) 步骤 S21 : 非等向性蚀刻基板，使顶面形成至少一非等向性蚀刻沟 槽； 即于局部加工图案 703、 704、 705、 706 进行非等向性蚀刻加工， 使 基板 70同时由局部加工图案 703、 704、 705、 706等四处向下形成一对应 的非等向性蚀刻沟槽， 可搭配前一实施例的步骤 S15 而通过研磨基板 70 的背面层而让非等向性蚀刻沟槽消失， 或者是于本步骤中直接经由非等向 性蚀刻而贯穿基板 70 , 形成贯穿槽孔， 这些贯穿槽孔的内侧面即为非等向 性蚀刻面， 此些非等向性蚀刻面可作为接触光语仪组件而作精确定位的表 面， 或是作为杂光散逸侧边。 此时基板 70的多数待加工区域 701之间是 藉由相邻但尚未进行切割的切割预线 702而维持连结。
(3) 步骤 S22: 去除基板顶面上的遮罩层； 即若于局部加工图案 703、 704、 705、 706以外的区域有残留的遮罩层， 则会先将之去除。
(4) 步骤 S23 : 进行一镀膜程序， 形成一镀膜层于顶面上方； 即于基板 70已去除遮罩层的顶面上设置一镀膜层，此镀膜层可以蒸镀方式设于基板
70上， 此为选择基板 70的顶面作为波导片成品的第一表面， 使其具有反 射功能， 而此镀膜层的结构组成可同前图 5D所示的镀膜层 61 , 但并不限 定于此， 只要是能具备反射能力的合适材料或结构皆可。
(5) 步驟 S24: 进行一贴膜程序， 贴附一贴膜于基板的一背面； 即于该 基板 70的背面上贴设置贴膜， 此贴膜作为暂时连结作用， 同图 5E所示的 贴膜 62, 但贴附的位置可在考量到避免污染反射层而相异于前一实施例， 改贴附于基板 70 的背面， 也就是在作为波导片成品的第二表面上贴附暂 时连接用的切割胶带； 第一表面与第二表面分别位于波导片成品的对向 面。 不过， 若待加工区域 701的图案分布能让波导片成品于后述刀切程序
中并不会任意散开， 则可省略此贴膜程序。
(6) 步骤 S25: 进行一刀切程序， 切割基板； 即于基板 70上， 针对各 个切割预线 702使用刀具或切割线进行机械切割加工。 经机械切割加工， 各个待加工区域 701 可完成分离并形成多数个如图 9 所示的波导片成品 71 , 且波导片成品 71相对于切割加工处形成一切割面 707。 此些经切割加 工而形成的切割面 707并不平整， 并不适用于作为光傳仪组件进行接触定 位的标的， 但仍可作为杂光散逸侧边。 另外， 这些经刀切程序形成而不能 作为定位侧边的其他侧边， 并不与经非等向性蚀刻程序形成而作为定位侧 边的非等向性蚀刻面在同一直线上。 本实施例所生产的波导片成品 71 经 过非等向性蚀刻程序加工而形成具有精度等级在 3um 以下的非等向性蚀 刻面 708,此非等向性蚀刻面 708可作为发挥波导片成品 71精确定位光谱 仪组件的区位， 而在原局部加工图案 706所形成的开孔则可作为杂光输出 口 710, 其内侧边即为杂光散逸侧边 709, 此为使用单一波导片即完成杂 光输出口设置的实施态样。 另外， 由于波导片成品 71 之间可予以贴膜连 结， 因此其并不至于在切割加工工序中散开。 最后经撕离贴膜即可完成制 作。
【0033】 上述各实施例中， 于对基板进行非等向性蚀刻程序， 例如反 应离子蚀刻、 离子蚀刻、 深反应式离子蚀刻 (DRIE；)、 电子束蚀刻、 光刻或 非等向性湿蚀刻等微机电制造程序处理时， 其细部操作处理上各有些许差 异。 例如采用反应离子蚀刻方法时， 其将作为基板的以硅晶圓放置于反应 室中， 然后导入四氟化碳为蚀刻气体， 在施加电压后让蚀刻气体电浆化而 形成二氟离子与二氟化碳离子等蚀刻种源， 这些蚀刻种源再与基板表面结 合而发生反应， 产生的四氟化硅、 一氧化碳等生成物， 可以为气体的形式 脱离， 达成蚀刻的效果。 氩离子束的加入则可大幅提升蚀刻的速率， 因为 其可打断基板表面的硅原子的化学键结， 让四氟化硅更容易产生。 更广义 而言， 本发明亦可使用其他蚀刻气体， 通过电浆而让蚀刻气体分解产生自 由基， 并配合离子束的参与而使基板更快地与自由基反应而形成气态的副 产品
【0034】 深反应式离子蚀刻是借着高浓度的电浆以及蚀刻-沈积多晶硅
保护层的交换步骤， 使基板能形成高深宽比的结构。 蚀刻-沈积多晶硅保护 层是使用六氟化硫及氩气， 在 -5至 -30V的偏压下， 使得阳离子产生电浆， 并加速使其几近垂直于基板而产生蚀刻的效果。 蚀刻短暂的时间后， 则开 始进行聚合作用。 借着使用八氟环丁烷与六氟化硫使得基板外曝的表面全 都沈积上一层二氟化碳。 在聚合作用后再给予一个偏压， 产生离子轰炸以 将垂直面的保护层去除， 只留下侧壁的保护层。 如此重复蚀刻 -保护侧壁的 循环即可完成对基板的深反应式离子蚀刻。
【0035】 而在离子蚀刻的方法中， 则是将基板单纯受到离子的轰击而 以物理性的机制撞击基板表面的材料， 使之脱离而达成蚀刻的效果。 电子 束蚀刻则是使用电子枪产生电子束， 而此电子束在原子尺度不会发生绕射 现象， 可以精密地切割出所需要的精密平整表面， 达到非等向性蚀刻的效 果。 另外， 亦可选择使用化学蚀刻液， 并且于基板的顶面上在形成遮罩层 时， 一并考量蚀刻液的等向性蚀刻的性质， 而设计补偿图形， 以获得雷同 于非等向性蚀刻的效果。 而光刻则是结合曝光、 显影以及蚀刻技术， 通过 已成熟的尺寸精密度控制及复合照相技术等， 于基板上形成精密的蚀刻结 构。 本发明所采用的微机电制造程序并不局限于上述几种方法。
【0036】请参考图 10 , 其进一步揭示通过微机电制造程序制作具有精 密接触定位面的光语仪的波导片时， 其在结构上可具有的技术特征。 如图 所示， 基板 80在遮罩层 81的部分遮蔽下， 可经微机电制造程序处理而形 成具有斜角的非等向性蚀刻斜面 82 , 如图所示的斜角 α大于 90。， 但不为 所限， 小于 90。亦可。 此实施例可搭配抵靠具有斜面形式的光傳仪组件。
【0037】 通过使用于前述数个实施例揭示的波导片所组装的光讲仪， 其得以在使用单一的波导片作为定位光谱仪组件以及设置杂光输出口的 样式下， 达到整体改善光语仪的感度和解析度的目的， 不过本发明也可让 光傳仪的上、 下两个波导片都使用微机电制造程序制作， 且不限制是于同 一制造程序中生产， 亦不限制是使用同一材料。 请参考图 11 , 其为光语仪 的位于上方的第一波导片 1，以及第二波导片 1的组合示意图， 两者之间具 有间隙通道 23。此实施例中的第一波导片 1，以及第二波导片 1可分别定位 不同的光傳仪组件；如图所示，第一光讲仪组件 31是抵靠于第一波导片 Γ
的第一定位侧边 12， 而第二光讲仪组件 32则是定位于第二波导片 1的第 三定位侧边 17a, 两个不同的光谱仪组件可分别被不同的波导片所定位。 而在杂光输出的部分， 第一波导片 Γ具有经 i机电制造程序所形成的第一 杂光散逸侧边 13 , 用以作为杂光输出口 14a的一侧， 而第二波导片 1可以 通过其所具有的第二杂光散逸侧边 18a作为杂光输出口 14a的另一侧， 两 个波导片共同组成杂光输出口的结构。 第二波导片 1也可使用习知的机械 加工制作， 不过此时各个光谱仪组件就需抵靠于第一波导片 Γ， 而非如此 实施例让二光语仪组件 32则是定位于第二波导片 1。 换言之， 可仅对单一 波导片制作精确的定位侧边， 并使所有的光脊仪组件抵靠于此波导片， 而 另一波导片则仅作为反射光线之用， 不为抵靠的用途。
【0038】 另外， 若波导片所定位的光谱仪组件为光档片， 其可发挥类 似杂光散逸侧边的功能， 因为杂光散逸侧边是让杂光有出口离开， 而光挡 片则是可以将杂光挡住。 藉由波导片的定位侧边是经由微机电制制造程序 制作， 相较于机械加工， 精确定位光挡片也得以有效解决杂光的问题。 又， 针对光傳仪使用环境的温度变化， 波导片与其相抵靠的光 i普仪组件， 例如 前述第一波导片 1，与第一光 i脊仪组件 31 ,两者可藉由使用相同材料制作而 得以在热胀冷缩发生时， 并不会因为元件间的热膨胀系数存在差异而让定 位精确性降低。
【0039】 综上所述， 本发明的实施例详细揭示了一种光语仪、 光借仪 的波导片的制造方法及其结构， 其利用已经抛光的硅晶圓为基础， 结合曝 光显影技术， 以及微机电制造程序而对硅晶圓作非等向性蚀刻程序处理， 使之形成具有精密定位能力的波导片， 这种具精密定位能力的波导片不但 能让光语仪组件经组装而产生的错位现象降低， 可确保光信号传递的品质 及路径的精准性、 稳定性， 还可通过杂光散逸侧边所构成的杂光输出口让 杂光能够有效率地离开光语仪， 进而能发挥光谱仪理应有的极佳的分析、 量测效果。 在兼顾到光潘仪的品质及其结构在制作上的变化灵活性， 总结 而言， 本发明的实施例无疑提供了充分展现经济及应用价值的一种光谱 仪、 光语仪的波导片的制造方法及其结构。
【0040】 惟以上所述者， 仅为本发明的较佳实施例而已， 并非用来限
定本发明实施的范围， 举凡依本发明申请专利范围所述的形状、 构造、 特 征及精神所为的均等变化与修饰， 均应包括于本发明的申请专利范围内。
【符号说明】
【0041】
1 波导片、 第二波导片
Γ 第一波导片
11 第一表面
110 反射层
12 第一定位侧边
13 第一杂光散逸侧边
14 第一杂光输出口
14a 杂光输出口
15 第二表面
16 第二定位侧边
17a, 17b 第三定位侧边
18a 第二杂光散逸侧边
18b 第三杂光散逸侧边
19a 第二杂光输出口
19b 第三杂光输出口
20 杂光散逸侧边
23 间隙通道
31 第一光谱仪组件
32 第二光借仪组件
33 第三光谱仪组件
主要光路区域
非主要光路区域
、 70、 80 基板
1、 801 顶面
背面
、 81 遮罩层
、 701 待加工区域
非等向性蚀刻沟槽
、 708 非等向性蚀刻面 a 定位侧边
b、 709 杂光散逸侧边
背面层
沟槽底面
镀膜层
1 附着层
反射层
保护层
贴膜
、 71 波导片成品
第一波导片图案
第二波导片图案
第三波导片图案
切割预线
、 704、 705、 706 局部加工图案
707 切割面
710 杂光输出口
71 波导片
82 非等向性蚀刻斜面
90 微光语仪
91 空间
92 入射狭缝装置
93 微型光栅
94 线型侦测器 AB 剖面线
C 交角
α 斜角
L1 光线
L2 有效光
S10-S15 步骤
S20-S25 步骤
Claims
1. 一种光语仪的波导片的制造方法， 包括：
设定一微机电制程图案，该微机电制程图案包括该光语仪的一第一波导 片图案； 以及
依据该微机电制程图案进行一微机电制造程序以产生至少一波导片，其 中上述波导片具有由该微机电制造程序所形成的至少一定位侧边与至 少一杂光散逸侧边，上述定位侧边用以供该光傅仪的一光语仪组件抵靠 而使该光谱仪组件定位于上述定位侧边，上述杂光散逸侧边用以作为一 杂光输出口的一侧。
2. 如权利要求 1所述的制造方法， 其中进行该微机电制造程序包括： 进行一非等向性蚀刻程序，使上述定位侧边或上述杂光散逸侧边具有非 等向性蚀刻特征。
3. 如权利要求 2所述的制造方法， 其中进行该非等向性蚀刻程序包括： 非等向性蚀刻一基板， 使该基板的一顶面形成至少一非等向性蚀刻沟 槽， 该非等向性蚀刻沟槽的侧边形成至少一非等向性蚀刻面， 其中该非 等向性蚀刻面作为该定位侧边或该杂光散逸侧边。
4. 如权利要求 2所述的制造方法， 其中进行该非等向性蚀刻程序包括： 进行一电子束蚀刻程序、 一离子蚀刻程序、 一反应式离子蚀刻程序、一 深反应式离子蚀刻程序、一湿蚀刻程序或一光刻程序， 使上述定位侧边 或上述杂光散逸侧边具有一电子束蚀刻特征、 一离子蚀刻特征、 一反应 式离子蚀刻特征、 一深反应式离子蚀刻特征、 一湿蚀刻特征或一光刻程 序特征。
5. 如权利要求 1所述的制造方法， 其中进行该微机电制造程序包括： 进行一电铸程序、 一纳米压印程序或一掀离程序， 使上述定位侧边或上 述杂光散逸侧边具有一电铸特征、 一纳米压印特征或一掀离特征。
6. 如权利要求 1所述的制造方法，其中该微机电制程图案更包括该光讲仪 的一第二波导片图案，该第一波导片图案与该第二波导片图案共用至少 一边界。
7. 如权利要求 1所述的制造方法，其中该微机电制程图案更包括一第三波 导片图案， 该第三波导片图案不同于该第一波导片图案。
8. 如权利要求 1所述的制造方法， 其中进行该微机电制造程序包括： 进行一镀膜程序， 使上述波导片的一第一表面具有一反射层。
9. 如权利要求 8所述的制造方法， 其中进行该微机电制造程序更包括： 进行一贴膜程序， 使上述第一表面贴附有一切割胶带。
10. 如权利要求 9所述的制造方法， 其中进行该微机电制造程序更包括： 进行一研磨程序， 使上述波导片的一第二表面具有一研磨特征， 其中 该第一表面与该第二表面分别位于上述波导片的对向面。
11. 如权利要求 8所述的制造方法， 其中进行该微机电制造程序更包括： 进行一刀切程序， 切割上述波导片的一其他侧边， 上述其他侧边与上 述定位侧边不在同一直线上。
12. 如权利要求 11所述的制造方法， 其中进行该微机电制造程序更包括： 进行一贴膜程序， 在进行该刀切程序之前使上述波导片的一第二表面 贴附有一切割胶带， 其中该第一表面与该第二表面分别位于上述波导 片的对向面。
13. 一种光讲仪的波导片， 包括： 一第一表面， 具有一反射层； 一第一定位侧边， 连接该第一表面， 该第一定位侧边由一微机电制造 程序所形成， 该第一定位侧边具有该微机电制造程序所产生的一第一 表面特征， 该第一定位侧边用以供该光谱仪的一第一光谱仪组件抵靠 而使该第一光傳仪组件定位于该第一定位侧边； 以及
一第一杂光散逸侧边， 连接该第一表面， 该第一杂光散逸侧边由该微
机电制造程序所形成， 该第一杂光散逸侧边具有该微机电制造程序所 产生的一第二表面特征， 该第一杂光散逸侧边用以作为该光豫仪的一 第一杂光输出口的一侧；
其中该波导片采用微机电制程材料。
14. 如权利要求 13所述的波导片， 更包括：
一第二定位侧边， 连接该第一表面， 该第二定位侧边由该微机电制造 程序所形成， 该第二定位侧边具有该微机电制造程序的该第一表面特 征， 其中该第一定位侧边与该第二定位侧边用以供该光普仪的该第一 光借仪组件抵靠而使该第一光 Ϊ普仪组件定位于该第一定位侧边与该第 二定位侧边。
15. 如权利要求 13所述的波导片， 更包括：
一第三定位侧边， 连接该第一表面， 该第三定位侧边由该微机电制造 程序所形成， 该第三定位侧边具有该微机电制造程序的该第一表面特 征， 该第三定位侧边用以供该光 ΐ普仪的一第二光 i普仪组件抵靠而使该 第二光讲仪组件定位于该第三定位侧边。
16. 如权利要求 13所述的波导片，其中该第一定位侧边为一直线或一非直 线图形。
17. 如权利要求 13所述的波导片 , 更包括：
一第二杂光散逸侧边， 连接该第一表面， 该第二杂光散逸侧边由该微 机电制造程序所形成， 该第二杂光散逸侧边具有该微机电制造程序所 产生的该第二表面特征， 该第二杂光散逸侧边用以作为该光旙仪的一 第二杂光输出口的一侧。
18. 如权利要求 13所述的波导片， 更包括：
一第三杂光散逸侧边， 连接该第一表面， 该第三杂光散逸侧边由一刀切 程序所形成，该第三杂光散逸侧边具有该刀切程序所产生的该第三表面 特征，该第三杂光散逸侧边用以作为该光语仪的一第三杂光输出口的一 侧。
19. 如权利要求 13所述的波导片，其中该第一杂光散逸侧边为一直线或一 非直线图形。
20. 如权利要求 13所述的波导片，其中该第一表面规画有一主要光路区域 与一非主要光路区域， 该主要光路区域由该光傳仪的多个光讲仪组件 所定义，该些光傳仪组件通过该主要光路区域进行有效光信号的传输， 该第一杂光散逸侧边位于该非主要光路区域上， 并接触该主要光路区 域与该非主要光路区域之间的边界。
21. 如权利要求 13所述的波导片， 更包括： 一第二表面， 连接上述第一定位侧边与上述第一杂光散逸侧边， 该第 二表面位于该第一表面的对向侧， 该第二表面具有一研磨程序所产生 一研磨特征。
22. 一种光 i普仪， 包括： 一第一波导片， 具有包括经一第一微机电制造程序所形成的至少一第 一定位侧边以及至少一第一杂光散逸侧边， 该第一上述杂光散逸侧边 用以作为一杂光输出口的一侧；
一第一光讲仪组件， 抵靠于该第一定位侧边； 以及
一第二波导片， 设置于该第一波导片的下方而与该第一波导片间形成 一间隙通道。
23. 如权利要求 22所述的光谱仪， 其中该第一光傳仪组件为光感测器、 光 栅、 狭缝件、 滤光片、 光挡片、 反射镜、 聚焦镜或准平面镜。
24. 如权利要求 22所述的光傳仪，其中该第一光讲仪组件与该第一波导片 采用相同材料。
25. 如权利要求 22所述的光诸仪，其中该第一波导片更包括经该第一微机 电制造程序所形成的一第二定位侧边， 该第一光傳仪组件抵靠于该第 一定位侧边与该第二定位侧边。
26. 如权利要求 22所述的光谱仪，其中该第一波导片更包括经该第一微机 电制造程序所形成的一第三定位侧边 , 该光谱仪更包括一第二光讲仪
组件， 该第二光语仪组件抵靠于该第三定位侧边。
27. 如权利要求 22所述的光傅仪，其中该第二波导片更包括经一第二微机 电制造程序所形成的一第三定位侧边与一第二杂光散逸侧边，该光" i普仪 更包括一第二光谱仪组件， 该第二光讲仪组件抵靠于该第三定位侧边， 该第二杂光散逸侧边作为该杂光输出口的另一侧。
28. 如权利要求 22所述的光傳仪， 更包括：
一第二光豫仪组件， 通过该间隙通道光学耦接该第一光豫仪组件， 进而 在该第一波导片定义出一主要光路区域与一非主要光路区域，该主要光 路区域用来传输有效光信号，该第一杂光散逸侧边位于该非主要光路区 域上并接触该主要光路区域与该非主要光路区域之间的边界。
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| PCT/CN2014/074738 WO2015149331A1 (zh) | 2014-04-03 | 2014-04-03 | 光谱仪、光谱仪的波导片的制造方法及其结构 |
| US15/300,781 US10145739B2 (en) | 2014-04-03 | 2014-04-03 | Waveguide sheet, fabrication method thereof and spectrometer using the same |
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| WO2011134149A1 (zh) * | 2010-04-28 | 2011-11-03 | 台湾超微光学股份有限公司 | 适用于光谱仪的狭缝座模块与光谱仪 |
| WO2011134145A1 (zh) * | 2010-04-28 | 2011-11-03 | 台湾超微光学股份有限公司 | 微型光谱仪以及其组装方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107607198A (zh) * | 2016-07-12 | 2018-01-19 | 台湾超微光学股份有限公司 | 光谱仪模组及其制作方法 |
| CN107607197A (zh) * | 2016-07-12 | 2018-01-19 | 台湾超微光学股份有限公司 | 光谱仪及其制作方法 |
| US10302486B2 (en) | 2016-07-12 | 2019-05-28 | Oto Photonics Inc. | Spectrometer module and fabrication method thereof |
| TWI715599B (zh) * | 2016-07-12 | 2021-01-11 | 台灣超微光學股份有限公司 | 光譜儀模組及其製作方法 |
| CN107607197B (zh) * | 2016-07-12 | 2021-08-31 | 台湾超微光学股份有限公司 | 光谱仪及其制作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106415222B (zh) | 2018-06-08 |
| US20170023407A1 (en) | 2017-01-26 |
| CN106415222A (zh) | 2017-02-15 |
| US10145739B2 (en) | 2018-12-04 |
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