JP4575154B2 - 多段リソグラフィックテンプレート、その製造方法、及び当該テンプレートを用いるデバイス作成方法 - Google Patents

多段リソグラフィックテンプレート、その製造方法、及び当該テンプレートを用いるデバイス作成方法 Download PDF

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Publication number
JP4575154B2
JP4575154B2 JP2004513847A JP2004513847A JP4575154B2 JP 4575154 B2 JP4575154 B2 JP 4575154B2 JP 2004513847 A JP2004513847 A JP 2004513847A JP 2004513847 A JP2004513847 A JP 2004513847A JP 4575154 B2 JP4575154 B2 JP 4575154B2
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layer
template
pattern
substrate
patterning
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Expired - Fee Related
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Japanese (ja)
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JP2005530338A (ja
JP2005530338A5 (enExample
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ピー． マンシーニ、デイビッド
ジェイ． レズニック、ダグラス
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NXP USA Inc
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NXP USA Inc
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Micromachines (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
JP2004513847A 2002-06-18 2003-06-03 多段リソグラフィックテンプレート、その製造方法、及び当該テンプレートを用いるデバイス作成方法 Expired - Fee Related JP4575154B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/174,464 US6852454B2 (en) 2002-06-18 2002-06-18 Multi-tiered lithographic template and method of formation and use
PCT/US2003/017549 WO2003107094A1 (en) 2002-06-18 2003-06-03 Multi-tiered lithographic template

Publications (3)

Publication Number Publication Date
JP2005530338A JP2005530338A (ja) 2005-10-06
JP2005530338A5 JP2005530338A5 (enExample) 2006-07-20
JP4575154B2 true JP4575154B2 (ja) 2010-11-04

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Family Applications (1)

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JP2004513847A Expired - Fee Related JP4575154B2 (ja) 2002-06-18 2003-06-03 多段リソグラフィックテンプレート、その製造方法、及び当該テンプレートを用いるデバイス作成方法

Country Status (6)

Country Link
US (1) US6852454B2 (enExample)
JP (1) JP4575154B2 (enExample)
KR (1) KR101018519B1 (enExample)
CN (1) CN1662852B (enExample)
AU (1) AU2003243384A1 (enExample)
WO (1) WO2003107094A1 (enExample)

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US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US20040224261A1 (en) * 2003-05-08 2004-11-11 Resnick Douglas J. Unitary dual damascene process using imprint lithography
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US7785526B2 (en) * 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
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US7161730B2 (en) * 2004-09-27 2007-01-09 Idc, Llc System and method for providing thermal compensation for an interferometric modulator display
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US20060177535A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US20060266916A1 (en) * 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
CN101505974A (zh) * 2005-09-07 2009-08-12 凸版光掩膜公司 用来制作双波纹结构的光掩模及其形成方法
JP4889316B2 (ja) * 2005-09-12 2012-03-07 学校法人東京理科大学 ３次元構造物の製造方法、３次元構造物、光学素子、ステンシルマスク、微細加工物の製造方法、及び微細パターン成形品の製造方法。
US20100215909A1 (en) * 2005-09-15 2010-08-26 Macdonald Susan S Photomask for the Fabrication of a Dual Damascene Structure and Method for Forming the Same
US7630114B2 (en) * 2005-10-28 2009-12-08 Idc, Llc Diffusion barrier layer for MEMS devices
US20070148558A1 (en) * 2005-12-27 2007-06-28 Shahzad Akbar Double metal collimated photo masks, diffraction gratings, optics system, and method related thereto
JP2007266193A (ja) * 2006-03-28 2007-10-11 Dainippon Printing Co Ltd インプリント用の型部材とその作製方法、およびこれらに用いられる積層基板
DE102006030267B4 (de) * 2006-06-30 2009-04-16 Advanced Micro Devices, Inc., Sunnyvale Nano-Einprägetechnik mit erhöhter Flexibilität in Bezug auf die Justierung und die Formung von Strukturelementen
WO2008097278A2 (en) * 2006-09-19 2008-08-14 Molecular Imprints, Inc. Etch-enhanced technique for lift-off patterning
JP5009649B2 (ja) 2007-02-28 2012-08-22 Ｈｏｙａ株式会社 マスクブランク、露光用マスクの製造方法、反射型マスクの製造方法、及びインプリント用テンプレートの製造方法
US8142702B2 (en) * 2007-06-18 2012-03-27 Molecular Imprints, Inc. Solvent-assisted layer formation for imprint lithography
US8753974B2 (en) * 2007-06-20 2014-06-17 Micron Technology, Inc. Charge dissipation of cavities
KR20100061731A (ko) * 2007-09-14 2010-06-08 퀄컴 엠이엠스 테크놀로지스, 인크. Ｍｅｍｓ 제조에 이용되는 에칭 방법
KR101530732B1 (ko) 2007-09-27 2015-06-22 호야 가부시키가이샤 마스크 블랭크, 및 임프린트용 몰드의 제조 방법
DE102007048807A1 (de) * 2007-10-10 2009-04-16 Micronas Gmbh Brennstoffzelle und Verfahren zum Herstellen einer Brennstoffzelle
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Also Published As

Publication number Publication date
US20030232252A1 (en) 2003-12-18
JP2005530338A (ja) 2005-10-06
US6852454B2 (en) 2005-02-08
CN1662852B (zh) 2010-10-27
KR101018519B1 (ko) 2011-03-03
CN1662852A (zh) 2005-08-31
KR20050021980A (ko) 2005-03-07
WO2003107094A1 (en) 2003-12-24
AU2003243384A1 (en) 2003-12-31

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