JP2008060591A - 半導体ウェハ及び半導体ウェハの製造方法 - Google Patents
半導体ウェハ及び半導体ウェハの製造方法 Download PDFInfo
- Publication number
- JP2008060591A JP2008060591A JP2007260183A JP2007260183A JP2008060591A JP 2008060591 A JP2008060591 A JP 2008060591A JP 2007260183 A JP2007260183 A JP 2007260183A JP 2007260183 A JP2007260183 A JP 2007260183A JP 2008060591 A JP2008060591 A JP 2008060591A
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- Prior art keywords
- semiconductor wafer
- susceptor
- back surface
- deposition
- wafer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】化学気相堆積(CVD)により被覆された前面と、ポリシング又はエッチングされた背面とを備えた半導体ウェハを製造するにあたり、ガス状物質を半導体ウェハの背面にわたる領域から、ほぼサセプタ中の孔だけを通して、サセプタの背面にわたる領域へ導通させることにより高さ変動PV(= peak to valley)として表して、背面のナノトポロジーが5nmより小さくする。
【選択図】図2
Description
Claims (2)
- 背面と、化学気相堆積(CVD)により被覆された前面と、ポリシング又はエッチングされた背面とを備えた半導体ウェハにおいて、高さ変動PV(= peak to valley)として表して、背面のナノトポロジーが5nmより小さいことを特徴とする、半導体ウェハ。
- 層の堆積のために、半導体ウェハの背面がサセプタの底部に向くように半導体ウェハをサセプタに搭載する、前面上の化学気相堆積(CVD)により堆積された層と、ポリシング又はエッチングされた背面とを備えた半導体ウェハの製造方法において、ガス状物質を半導体ウェハの背面にわたる領域から、ほぼサセプタ中の孔だけを通して、サセプタの背面にわたる領域へ導通させることを特徴とする、半導体ウェハの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10328842.2 | 2003-06-26 | ||
DE10328842A DE10328842B4 (de) | 2003-06-26 | 2003-06-26 | Suszeptor für eine chemische Gasphasenabscheidung, Verfahren zur Bearbeitung einer Halbleiterscheibe durch chemische Gasphasenabscheidung und nach dem Verfahren bearbeitete Halbleiterscheibe |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004186375A Division JP4195417B2 (ja) | 2003-06-26 | 2004-06-24 | 半導体ウェハを搭載するためのサセプタ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008060591A true JP2008060591A (ja) | 2008-03-13 |
JP4773413B2 JP4773413B2 (ja) | 2011-09-14 |
Family
ID=33521046
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004186375A Expired - Lifetime JP4195417B2 (ja) | 2003-06-26 | 2004-06-24 | 半導体ウェハを搭載するためのサセプタ |
JP2007260183A Expired - Lifetime JP4773413B2 (ja) | 2003-06-26 | 2007-10-03 | 半導体ウェハ及び半導体ウェハの製造方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004186375A Expired - Lifetime JP4195417B2 (ja) | 2003-06-26 | 2004-06-24 | 半導体ウェハを搭載するためのサセプタ |
Country Status (6)
Country | Link |
---|---|
US (1) | US7101794B2 (ja) |
JP (2) | JP4195417B2 (ja) |
KR (1) | KR100633757B1 (ja) |
CN (1) | CN100394550C (ja) |
DE (1) | DE10328842B4 (ja) |
TW (1) | TWI249192B (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004060625A1 (de) * | 2004-12-16 | 2006-06-29 | Siltronic Ag | Beschichtete Halbleiterscheibe und Verfahren und Vorrichtung zur Herstellung der Halbleiterscheibe |
US7285483B2 (en) | 2003-06-26 | 2007-10-23 | Silitronic Ag | Coated semiconductor wafer, and process and apparatus for producing the semiconductor wafer |
EP1719167B1 (en) * | 2004-02-13 | 2011-10-26 | ASM America, Inc. | Substrate support system for reduced autodoping and backside deposition |
NL1028867C2 (nl) * | 2005-04-26 | 2006-10-27 | Xycarb Ceramics B V | Inrichting voor het ondersteunen van een substraat alsmede een werkwijze voor het vervaardigen van een dergelijke inrichting. |
DE102005045337B4 (de) * | 2005-09-22 | 2008-08-21 | Siltronic Ag | Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben |
US20070221335A1 (en) * | 2006-03-23 | 2007-09-27 | Recif Technologies | Device for contact by adhesion to a glass or semiconductor plate (wafer) surface or the like and system for gripping such a plate comprising such a device |
JP5140990B2 (ja) * | 2006-10-27 | 2013-02-13 | 信越半導体株式会社 | エピタキシャルシリコンウエーハの製造方法 |
DE102006055038B4 (de) | 2006-11-22 | 2012-12-27 | Siltronic Ag | Epitaxierte Halbleiterscheibe sowie Vorrichtung und Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe |
US20080314319A1 (en) * | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
DE102007054527A1 (de) * | 2007-11-07 | 2009-05-14 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Neue Aufheizblöcke |
US8404049B2 (en) * | 2007-12-27 | 2013-03-26 | Memc Electronic Materials, Inc. | Epitaxial barrel susceptor having improved thickness uniformity |
US20090280248A1 (en) * | 2008-05-06 | 2009-11-12 | Asm America, Inc. | Porous substrate holder with thinned portions |
DE102008023054B4 (de) | 2008-05-09 | 2011-12-22 | Siltronic Ag | Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe |
US20100098519A1 (en) * | 2008-10-17 | 2010-04-22 | Memc Electronic Materials, Inc. | Support for a semiconductor wafer in a high temperature environment |
DE102008053610B4 (de) * | 2008-10-29 | 2011-03-31 | Siltronic Ag | Verfahren zum beidseitigen Polieren einer Halbleiterscheibe |
DE102015224446A1 (de) | 2015-12-07 | 2017-06-08 | Siltronic Ag | Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe |
DE102017000528A1 (de) * | 2017-01-20 | 2018-07-26 | Berliner Glas Kgaa Herbert Kubatz Gmbh & Co. | Verfahren zur Bearbeitung einer Halteplatte, insbesondere für einen Clamp zur Waferhalterung |
DE102018221605A1 (de) | 2018-12-13 | 2020-06-18 | Siltronic Ag | Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe |
EP3835281A1 (de) | 2019-12-13 | 2021-06-16 | Siltronic AG | Verfahren zur herstellung eines plattenförmigen formkörpers mit einer siliziumkarbid-matrix |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6340763A (ja) * | 1986-08-06 | 1988-02-22 | 東芝セラミックス株式会社 | カ−ボン治具 |
JPH04149081A (ja) * | 1990-10-11 | 1992-05-22 | Toshiba Ceramics Co Ltd | SiC被覆C/C複合材 |
JPH04324625A (ja) * | 1991-04-24 | 1992-11-13 | Toshiba Mach Co Ltd | 気相成長装置 |
WO2001086035A1 (en) * | 2000-05-08 | 2001-11-15 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer free from autodoping and backside halo |
JP2003229370A (ja) * | 2001-11-30 | 2003-08-15 | Shin Etsu Handotai Co Ltd | サセプタ、気相成長装置、エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4661199A (en) * | 1985-11-12 | 1987-04-28 | Rca Corporation | Method to inhibit autodoping in epitaxial layers from heavily doped substrates in CVD processing |
US5246884A (en) * | 1991-10-30 | 1993-09-21 | International Business Machines Corporation | Cvd diamond or diamond-like carbon for chemical-mechanical polish etch stop |
ATE190296T1 (de) * | 1995-04-28 | 2000-03-15 | Didier Werke Ag | Sic-formkörper |
US5904892A (en) | 1996-04-01 | 1999-05-18 | Saint-Gobain/Norton Industrial Ceramics Corp. | Tape cast silicon carbide dummy wafer |
JP3336897B2 (ja) * | 1997-02-07 | 2002-10-21 | 三菱住友シリコン株式会社 | 気相成長装置用サセプター |
JP3003027B2 (ja) * | 1997-06-25 | 2000-01-24 | 日本ピラー工業株式会社 | 単結晶SiCおよびその製造方法 |
US5921856A (en) * | 1997-07-10 | 1999-07-13 | Sp3, Inc. | CVD diamond coated substrate for polishing pad conditioning head and method for making same |
JP2000109366A (ja) | 1998-10-07 | 2000-04-18 | Ngk Insulators Ltd | 光不透過性の高純度炭化珪素材、半導体処理装置用遮光材および半導体処理装置 |
US6162543A (en) * | 1998-12-11 | 2000-12-19 | Saint-Gobain Industrial Ceramics, Inc. | High purity siliconized silicon carbide having high thermal shock resistance |
JP2001196373A (ja) * | 2000-01-13 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
US6444027B1 (en) * | 2000-05-08 | 2002-09-03 | Memc Electronic Materials, Inc. | Modified susceptor for use in chemical vapor deposition process |
US20050000449A1 (en) * | 2001-12-21 | 2005-01-06 | Masayuki Ishibashi | Susceptor for epitaxial growth and epitaxial growth method |
-
2003
- 2003-06-26 DE DE10328842A patent/DE10328842B4/de not_active Expired - Lifetime
-
2004
- 2004-05-26 US US10/854,649 patent/US7101794B2/en not_active Expired - Lifetime
- 2004-06-23 TW TW093118123A patent/TWI249192B/zh active
- 2004-06-23 KR KR1020040047118A patent/KR100633757B1/ko active IP Right Grant
- 2004-06-24 JP JP2004186375A patent/JP4195417B2/ja not_active Expired - Lifetime
- 2004-06-28 CN CNB2004100620301A patent/CN100394550C/zh not_active Expired - Lifetime
-
2007
- 2007-10-03 JP JP2007260183A patent/JP4773413B2/ja not_active Expired - Lifetime
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6340763A (ja) * | 1986-08-06 | 1988-02-22 | 東芝セラミックス株式会社 | カ−ボン治具 |
JPH04149081A (ja) * | 1990-10-11 | 1992-05-22 | Toshiba Ceramics Co Ltd | SiC被覆C/C複合材 |
JPH04324625A (ja) * | 1991-04-24 | 1992-11-13 | Toshiba Mach Co Ltd | 気相成長装置 |
WO2001086035A1 (en) * | 2000-05-08 | 2001-11-15 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer free from autodoping and backside halo |
JP2003532612A (ja) * | 2000-11-29 | 2003-11-05 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | オートドーピングおよび後面ハローがないエピタキシャルシリコンウエハ |
JP2003229370A (ja) * | 2001-11-30 | 2003-08-15 | Shin Etsu Handotai Co Ltd | サセプタ、気相成長装置、エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ |
Also Published As
Publication number | Publication date |
---|---|
US20040266181A1 (en) | 2004-12-30 |
US7101794B2 (en) | 2006-09-05 |
TW200501243A (en) | 2005-01-01 |
DE10328842B4 (de) | 2007-03-01 |
KR20050001372A (ko) | 2005-01-06 |
CN1577744A (zh) | 2005-02-09 |
TWI249192B (en) | 2006-02-11 |
KR100633757B1 (ko) | 2006-10-16 |
CN100394550C (zh) | 2008-06-11 |
JP4773413B2 (ja) | 2011-09-14 |
JP2005020000A (ja) | 2005-01-20 |
JP4195417B2 (ja) | 2008-12-10 |
DE10328842A1 (de) | 2005-01-20 |
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