JP2008027544A5 - - Google Patents

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Publication number
JP2008027544A5
JP2008027544A5 JP2006200540A JP2006200540A JP2008027544A5 JP 2008027544 A5 JP2008027544 A5 JP 2008027544A5 JP 2006200540 A JP2006200540 A JP 2006200540A JP 2006200540 A JP2006200540 A JP 2006200540A JP 2008027544 A5 JP2008027544 A5 JP 2008027544A5
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JP
Japan
Prior art keywords
bit line
sub
complementary
semiconductor memory
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006200540A
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English (en)
Japanese (ja)
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JP2008027544A (ja
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Publication date
Application filed filed Critical
Priority to JP2006200540A priority Critical patent/JP2008027544A/ja
Priority claimed from JP2006200540A external-priority patent/JP2008027544A/ja
Priority to US11/826,566 priority patent/US7471579B2/en
Publication of JP2008027544A publication Critical patent/JP2008027544A/ja
Publication of JP2008027544A5 publication Critical patent/JP2008027544A5/ja
Pending legal-status Critical Current

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JP2006200540A 2006-07-24 2006-07-24 半導体記憶装置及びそのテスト方法 Pending JP2008027544A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006200540A JP2008027544A (ja) 2006-07-24 2006-07-24 半導体記憶装置及びそのテスト方法
US11/826,566 US7471579B2 (en) 2006-07-24 2007-07-17 Semiconductor memory and test method for the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006200540A JP2008027544A (ja) 2006-07-24 2006-07-24 半導体記憶装置及びそのテスト方法

Publications (2)

Publication Number Publication Date
JP2008027544A JP2008027544A (ja) 2008-02-07
JP2008027544A5 true JP2008027544A5 (enExample) 2010-11-11

Family

ID=38971306

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006200540A Pending JP2008027544A (ja) 2006-07-24 2006-07-24 半導体記憶装置及びそのテスト方法

Country Status (2)

Country Link
US (1) US7471579B2 (enExample)
JP (1) JP2008027544A (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5651292B2 (ja) * 2008-04-24 2015-01-07 ピーエスフォー ルクスコ エスエイアールエルＰＳ４ Ｌｕｘｃｏ Ｓ．ａ．ｒ．ｌ． 半導体記憶装置及びそのテスト方法
US9208902B2 (en) * 2008-10-31 2015-12-08 Texas Instruments Incorporated Bitline leakage detection in memories
KR101069674B1 (ko) * 2009-06-08 2011-10-04 주식회사 하이닉스반도체 반도체 메모리 장치 및 이의 테스트 방법
US8363450B2 (en) 2009-07-13 2013-01-29 Seagate Technology Llc Hierarchical cross-point array of non-volatile memory
US8098507B2 (en) * 2009-07-13 2012-01-17 Seagate Technology Llc Hierarchical cross-point array of non-volatile memory
JP2012178199A (ja) * 2011-02-25 2012-09-13 Elpida Memory Inc 半導体装置及びその制御方法
JP2012203977A (ja) * 2011-03-28 2012-10-22 Elpida Memory Inc 半導体装置及びその制御方法並びにその情報処理システム
CN111161785A (zh) * 2019-12-31 2020-05-15 展讯通信（上海）有限公司 静态随机存储器及其故障检测电路
EP4012711A4 (en) * 2020-10-13 2022-11-16 Changxin Memory Technologies, Inc. DATA WRITING METHOD
CN115620767B (zh) * 2021-07-12 2025-06-06 长鑫存储技术有限公司 存储器的检测方法和存储器的检测装置
US11594275B2 (en) * 2021-07-12 2023-02-28 Changxin Memory Technologies, Inc. Method for detecting leakage position in memory and device for detecting leakage position in memory
US11978504B2 (en) 2022-03-23 2024-05-07 Changxin Memory Technologies, Inc. Method and apparatus for determining sense boundary of sense amplifier, medium, and device
US11798617B2 (en) 2022-03-23 2023-10-24 Changxin Memory Technologies, Inc. Method and apparatus for determining sense boundary of sense amplifier, medium, and device
CN116844618A (zh) * 2022-03-23 2023-10-03 长鑫存储技术有限公司 存储器测试方法及装置、介质及设备

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2543870B2 (ja) * 1986-09-30 1996-10-16 株式会社東芝 半導体記憶装置
JP3672946B2 (ja) * 1993-11-30 2005-07-20 株式会社ルネサステクノロジ 半導体記憶装置
US5701269A (en) * 1994-11-28 1997-12-23 Fujitsu Limited Semiconductor memory with hierarchical bit lines
JPH08195100A (ja) * 1995-01-18 1996-07-30 Mitsubishi Electric Corp 半導体記憶装置の動作テスト方法および半導体記憶装置
US5748538A (en) * 1996-06-17 1998-05-05 Aplus Integrated Circuits, Inc. OR-plane memory cell array for flash memory with bit-based write capability, and methods for programming and erasing the memory cell array
US6327202B1 (en) * 2000-08-25 2001-12-04 Micron Technology, Inc. Bit line pre-charge in a memory
JP3845051B2 (ja) * 2002-09-11 2006-11-15 株式会社東芝 不揮発性半導体メモリ

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