JP2008021941A - 多層配線基板及びその製造方法 - Google Patents
多層配線基板及びその製造方法 Download PDFInfo
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- JP2008021941A JP2008021941A JP2006194753A JP2006194753A JP2008021941A JP 2008021941 A JP2008021941 A JP 2008021941A JP 2006194753 A JP2006194753 A JP 2006194753A JP 2006194753 A JP2006194753 A JP 2006194753A JP 2008021941 A JP2008021941 A JP 2008021941A
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- insulating film
- wiring board
- multilayer wiring
- interlayer insulating
- insulating films
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/467—Adding a circuit layer by thin film methods
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
- H01L23/49894—Materials of the insulating layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5383—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0175—Inorganic, non-metallic layer, e.g. resist or dielectric for printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0137—Materials
- H05K2201/0179—Thin film deposited insulating layer, e.g. inorganic layer for printed capacitor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0183—Dielectric layers
- H05K2201/0195—Dielectric or adhesive layers comprising a plurality of layers, e.g. in a multilayer structure
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09509—Blind vias, i.e. vias having one side closed
- H05K2201/09518—Deep blind vias, i.e. blind vias connecting the surface circuit to circuit layers deeper than the first buried circuit layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1333—Deposition techniques, e.g. coating
- H05K2203/1338—Chemical vapour deposition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4602—Manufacturing multilayer circuits characterized by a special circuit board as base or central core whereon additional circuit layers are built or additional circuit boards are laminated
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
【解決手段】本発明の多層配線基板は、複数の配線層13a〜13eと層間絶縁膜15ab、15bc、15cd、15deを有し、且つ、隣接配線層を接続するタイプのビア17と、2以上の層間絶縁膜を介して上下の配線層を接続するタイプのビア17’とを有する多層配線基板であって、層間絶縁膜の少なくとも一部が無機絶縁膜で形成されており、且つ、2以上の層間絶縁膜を介して上下の配線層を接続するタイプのビア17’が、無機絶縁膜でいずれも形成された層間絶縁膜を貫通する単一のビアとして形成されていることを特徴とする。好ましくは、層間絶縁膜の全てが無機絶縁膜で作製され、無機絶縁膜は低温CVD法で形成されている。好ましくは、無機絶縁膜の厚みは0.5〜2.0μmである。
【選択図】図1
Description
好ましくは、無機絶縁膜は低温CVD法で形成されている。
好ましくは、無機絶縁膜の厚みは0.5〜2.0μm、より好ましくは0.5〜1.5μm、最も好ましくは0.5〜1.0μmである。
13a〜13e 配線層
15ab、15bc、15cd、15de 層間絶縁膜
17、17’ ビア
19 保護層
21 パッド
23 スルーホール
31 コア基板
33 スルーホール電極
35、43、49、55、65 配線層
37、45、51、57 層間絶縁膜
41、47、53、61、63 ビア
67、67’ 保護層
71 パッド
73 金属バンプ
Claims (5)
- 複数の配線層と層間絶縁膜を有し、且つ、隣接配線層を接続するタイプのビアと、2以上の層間絶縁膜を介して上下の配線層を接続するタイプのビアとを有する多層配線基板であって、層間絶縁膜の少なくとも一部が無機絶縁膜で形成されており、且つ、2以上の層間絶縁膜を介して上下の配線層を接続するタイプのビアが、無機絶縁膜でいずれも形成された層間絶縁膜を貫通する単一のビアとして形成されていることを特徴とする多層配線基板。
- 層間絶縁膜の全てが無機絶縁膜で作製されている、請求項1記載の多層配線基板。
- 無機絶縁膜が低温CVD法で形成されている、請求項1又は2記載の多層配線基板。
- 無機絶縁膜の厚みが0.5〜2.0μmである、請求項1から3までのいずれか一つに記載の多層配線基板。
- 請求項1から4までのいずれか一つに記載の多層配線基板の製造方法であって、2以上の無機絶縁膜を介して上下の配線層を接続するタイプのビアの形成を、当該2以上の無機絶縁膜を形成してからそれらをホトリソグラフ法により同時に処理して形成した開口部を用いて行うことを特徴とする多層配線基板製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006194753A JP5173160B2 (ja) | 2006-07-14 | 2006-07-14 | 多層配線基板及びその製造方法 |
KR1020070069940A KR20080007124A (ko) | 2006-07-14 | 2007-07-12 | 다층 배선 기판 및 그 제조 방법 |
TW096125530A TW200806147A (en) | 2006-07-14 | 2007-07-13 | Multilayer wiring substrate and manufacturing method thereof |
US11/826,263 US20080012120A1 (en) | 2006-07-14 | 2007-07-13 | Multilayer wiring substrate and manufacturing method thereof |
EP07013920A EP1879227A1 (en) | 2006-07-14 | 2007-07-16 | Multilayer wiring substrate and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006194753A JP5173160B2 (ja) | 2006-07-14 | 2006-07-14 | 多層配線基板及びその製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008021941A true JP2008021941A (ja) | 2008-01-31 |
JP2008021941A5 JP2008021941A5 (ja) | 2009-07-16 |
JP5173160B2 JP5173160B2 (ja) | 2013-03-27 |
Family
ID=38621177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006194753A Expired - Fee Related JP5173160B2 (ja) | 2006-07-14 | 2006-07-14 | 多層配線基板及びその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080012120A1 (ja) |
EP (1) | EP1879227A1 (ja) |
JP (1) | JP5173160B2 (ja) |
KR (1) | KR20080007124A (ja) |
TW (1) | TW200806147A (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7202785B2 (ja) * | 2018-04-27 | 2023-01-12 | 新光電気工業株式会社 | 配線基板及び配線基板の製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0372693A (ja) * | 1989-08-11 | 1991-03-27 | Hitachi Ltd | 配線部材及びその形成方法 |
JPH0653350A (ja) * | 1992-07-30 | 1994-02-25 | Hitachi Ltd | 多層回路基板及びその製造方法とそれを用いた電子回路モジュール並びに電子回路装置 |
JPH06291518A (ja) * | 1993-03-31 | 1994-10-18 | Nippon Chemicon Corp | マイクロストリップラインによるインピーダンス変換器 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3918148A (en) * | 1974-04-15 | 1975-11-11 | Ibm | Integrated circuit chip carrier and method for forming the same |
US4642160A (en) * | 1985-08-12 | 1987-02-10 | Interconnect Technology Inc. | Multilayer circuit board manufacturing |
US4977105A (en) * | 1988-03-15 | 1990-12-11 | Mitsubishi Denki Kabushiki Kaisha | Method for manufacturing interconnection structure in semiconductor device |
JPH01257397A (ja) * | 1988-04-07 | 1989-10-13 | Mitsubishi Heavy Ind Ltd | 金属プリント基板 |
JPH04242088A (ja) * | 1991-01-16 | 1992-08-28 | Nec Corp | Icソケット |
US5871868A (en) * | 1993-02-26 | 1999-02-16 | General Dynamics Information Systems, Inc. | Apparatus and method for machining conductive structures on substrates |
US5510758A (en) * | 1993-04-07 | 1996-04-23 | Matsushita Electric Industrial Co., Ltd. | Multilayer microstrip wiring board with a semiconductor device mounted thereon via bumps |
JP3260941B2 (ja) * | 1993-06-18 | 2002-02-25 | 株式会社日立製作所 | 多層配線基板および多層配線基板の製造方法 |
US6331680B1 (en) * | 1996-08-07 | 2001-12-18 | Visteon Global Technologies, Inc. | Multilayer electrical interconnection device and method of making same |
JP3531573B2 (ja) * | 2000-03-17 | 2004-05-31 | 株式会社村田製作所 | 積層型セラミック電子部品およびその製造方法ならびに電子装置 |
US7164197B2 (en) * | 2003-06-19 | 2007-01-16 | 3M Innovative Properties Company | Dielectric composite material |
JP4413573B2 (ja) * | 2003-10-16 | 2010-02-10 | 株式会社半導体エネルギー研究所 | 半導体装置及びその作製方法 |
CN100367491C (zh) * | 2004-05-28 | 2008-02-06 | 日本特殊陶业株式会社 | 中间基板 |
-
2006
- 2006-07-14 JP JP2006194753A patent/JP5173160B2/ja not_active Expired - Fee Related
-
2007
- 2007-07-12 KR KR1020070069940A patent/KR20080007124A/ko not_active Application Discontinuation
- 2007-07-13 US US11/826,263 patent/US20080012120A1/en not_active Abandoned
- 2007-07-13 TW TW096125530A patent/TW200806147A/zh unknown
- 2007-07-16 EP EP07013920A patent/EP1879227A1/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0372693A (ja) * | 1989-08-11 | 1991-03-27 | Hitachi Ltd | 配線部材及びその形成方法 |
JPH0653350A (ja) * | 1992-07-30 | 1994-02-25 | Hitachi Ltd | 多層回路基板及びその製造方法とそれを用いた電子回路モジュール並びに電子回路装置 |
JPH06291518A (ja) * | 1993-03-31 | 1994-10-18 | Nippon Chemicon Corp | マイクロストリップラインによるインピーダンス変換器 |
Also Published As
Publication number | Publication date |
---|---|
EP1879227A1 (en) | 2008-01-16 |
TW200806147A (en) | 2008-01-16 |
KR20080007124A (ko) | 2008-01-17 |
US20080012120A1 (en) | 2008-01-17 |
JP5173160B2 (ja) | 2013-03-27 |
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