JP2008016798A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP2008016798A JP2008016798A JP2006330481A JP2006330481A JP2008016798A JP 2008016798 A JP2008016798 A JP 2008016798A JP 2006330481 A JP2006330481 A JP 2006330481A JP 2006330481 A JP2006330481 A JP 2006330481A JP 2008016798 A JP2008016798 A JP 2008016798A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gate insulating
- insulating film
- type semiconductor
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 161
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 77
- 239000010410 layer Substances 0.000 claims abstract description 348
- 229910052751 metal Inorganic materials 0.000 claims abstract description 89
- 239000002184 metal Substances 0.000 claims abstract description 82
- 150000001875 compounds Chemical class 0.000 claims abstract description 64
- 239000000203 mixture Substances 0.000 claims abstract description 32
- 239000002356 single layer Substances 0.000 claims abstract description 20
- 229910021332 silicide Inorganic materials 0.000 claims description 91
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 89
- 238000000034 method Methods 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 49
- 238000010438 heat treatment Methods 0.000 claims description 47
- 238000005468 ion implantation Methods 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 15
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 13
- 239000011574 phosphorus Substances 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 12
- 229910052796 boron Inorganic materials 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 238000004544 sputter deposition Methods 0.000 claims description 10
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- 229910052735 hafnium Inorganic materials 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 6
- 229910052726 zirconium Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000002513 implantation Methods 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052691 Erbium Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052716 thallium Inorganic materials 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 239000010408 film Substances 0.000 description 240
- 230000006870 function Effects 0.000 description 124
- 239000010931 gold Substances 0.000 description 45
- 229910005883 NiSi Inorganic materials 0.000 description 43
- 238000009792 diffusion process Methods 0.000 description 38
- 229910052710 silicon Inorganic materials 0.000 description 28
- 239000000463 material Substances 0.000 description 27
- 239000013078 crystal Substances 0.000 description 25
- 230000004048 modification Effects 0.000 description 25
- 238000012986 modification Methods 0.000 description 25
- 238000004458 analytical method Methods 0.000 description 24
- 230000008569 process Effects 0.000 description 24
- 239000012071 phase Substances 0.000 description 22
- 239000010703 silicon Substances 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 21
- 239000010409 thin film Substances 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 19
- 238000009826 distribution Methods 0.000 description 19
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 16
- 239000012535 impurity Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 238000004627 transmission electron microscopy Methods 0.000 description 13
- 229910052732 germanium Inorganic materials 0.000 description 11
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 239000003990 capacitor Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 230000001133 acceleration Effects 0.000 description 8
- 229910052799 carbon Inorganic materials 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- 230000007423 decrease Effects 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 238000002955 isolation Methods 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 238000005204 segregation Methods 0.000 description 6
- 229910008484 TiSi Inorganic materials 0.000 description 5
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 4
- 229910018098 Ni-Si Inorganic materials 0.000 description 4
- 229910018529 Ni—Si Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 238000003746 solid phase reaction Methods 0.000 description 3
- 241000894007 species Species 0.000 description 3
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 241000252073 Anguilliformes Species 0.000 description 2
- 229910003839 Hf—Si Inorganic materials 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910006137 NiGe Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- -1 Ta 2 O 5 Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005430 electron energy loss spectroscopy Methods 0.000 description 2
- 238000001941 electron spectroscopy Methods 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 2
- 229910003855 HfAlO Inorganic materials 0.000 description 1
- 229910004143 HfON Inorganic materials 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910017414 LaAl Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910006249 ZrSi Inorganic materials 0.000 description 1
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-LZFNBGRKSA-N boron-17 Chemical compound [17B] ZOXJGFHDIHLPTG-LZFNBGRKSA-N 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013213 extrapolation Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005324 grain boundary diffusion Methods 0.000 description 1
- 238000010406 interfacial reaction Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000001420 photoelectron spectroscopy Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 238000005464 sample preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 230000005469 synchrotron radiation Effects 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28097—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a metallic silicide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide
Abstract
【解決手段】第1ソース・ドレイン領域9,10の間のp型半導体領域上に形成されたアモルファス層またはエピタキシャル層を有する第1ゲート絶縁膜5と、第1ゲート絶縁膜上に形成され4.3eV以下の仕事関数を有する第1金属の単体層である第1金属層6a、および第1金属層上に形成され第1金属と異なる第2金属とIV族半導体との化合物を含む第1化合物層6bの積層構造を有する第1ゲート電極6と、を有するnチャネルMISトランジスタ100と、第2ソース・ドレイン領域19,20と、第2ソース・ドレイン領域の間のn型半導体領域上に形成された第2ゲート絶縁膜15と、第2ゲート絶縁膜上に形成され、第1化合物層と同じ組成の化合物を含む第2化合物層16を有する第2ゲート電極16と、を有するpチャネルMISトランジスタ200と、を備えている。
【選択図】図1
Description
Y.H.Kim et al., Tech. Dig. IEDM2005, p.665 N.Biswas et al., Tech. Dig. IEDM2005, p.657
本発明の第1実施形態による半導体装置を説明する。本実施形態の半導体装置は、CMOSFETであって、そのゲート長方向の断面を図1に示す。
ffを抽出したものである。
次に、第1実施形態の半導体装置の製造方法を、図7乃至図9を参照して説明する。
次に、本発明の第2実施形態による半導体装置を、図13を参照して説明する。本実施形態の半導体装置は、CMISFETであって、そのゲート長方向の断面図を図13に示す。
次に、図15に示した第2実施形態の変形例による半導体装置の製造方法を、図16乃至図17を参照して説明する。
次に、本発明の第3実施形態による半導体装置を説明する。本実施形態の半導体装置はCMISFETであって、ゲート長方向の断面を図18に示す。
次に、本発明の第4実施形態による半導体装置の製造方法を説明する。本実施形態の製造方法は、nチャネルMISトランジスタとpチャネルMISトランジスタのゲート電極としてNi2Siを用い、nチャネルMISトランジスタのゲート電極にAlを導入するのにNi2Si膜上のAl薄膜からの熱拡散を利用するものである。なお、本実施形態の製造方法において、ゲート電極の材料としてNi2Siの代わりにNiSiを用いてもよい。Ni2SiとNiSiの物性は極めて似通っていて、下記で説明するNi3Siに対する優位点はNi2SiとNiSiでほぼ同等である。ただしNi2SiのほうがNiSiよりも仕事関数が高く、pチャネルMISトランジスタのゲート電極にふさわしいという特長を有しており、本実施形態の製造方法においてはNi2Siを用いることがより望ましい。
a)同定したNi2Siピーク
斜方晶Ni2Si(123) 2θ=44.638°
斜方晶Ni2Si(203) 2θ=45.829°
斜方晶Ni2Si(150) 2θ=47.347°
六方晶Ni2Si(110) 2θ=47.876°
b)検出されなかったNi3SiおよびNiSiピークの位置
立方晶Ni3Si(111) 2θ=44.871°
立方晶Ni3Si(200) 2θ=52.275°
立方晶Ni3Si(210) 2θ=58.817°
斜方晶NiSi(210) 2θ=44.369°
斜方晶NiSi(202) 2θ=47.279°
斜方晶NiSi(103) 2θ=51.438°
斜方晶NiSi(301) 2θ=55.042°
斜方晶NiSi(212) 2θ=55.476°
斜方晶NiSi(013) 2θ=56.326°
斜方晶NiSi(020) 2θ=56.439°
第4実施形態ではpチャネルMISトランジスタのゲート電極はNi2Siであり、抵抗が低いなどの利点はあるものの、仕事関数が4.75eV程度であり、pチャネルMISトランジスタのしきい値電圧を十分低くするのにはもう少し高い仕事関数が望ましい。この変形例では、図22に示す構造に対し、pチャネルMISトランジスタのゲート電極の上部にのみTi層60、Ni層70を積層する。一例として、5nmのTi、100nmのNiを、この順番で、真空中で連続的にスパッタ成膜する。nチャネルMISトランジスタの上部は公知の方法でSiNなどのハードマスク80で被覆しておく(図29参照)。
2 p型ウェル領域
3 n型ウェル領域
4 素子分離層
5、15 HfSiON膜(ゲート絶縁層)
6 ゲート電極
6a Al(アルミニウム)層
6b Niシリサイド層(Ni3Si層)
6c Niシリサイド層(Ni2Si層)
7 リン元素
8、18 ゲート側壁
9 エクステンション層
10 拡散層
11 Al(アルミニウム)層
12 Niシリサイド層(NiSi層)
16 Niシリサイド層(Ni3Si層)
17 ボロン元素
19 エクステンション層
20 拡散層
22 Niシリサイド層(NiSi層)
24 層間絶縁膜
26 Niシリサイド層(Ni2Si層)
30 レジスト又はハードマスク
32 Tiシリサイド層(TiSi2層)
36 Hfシリサイド層(HfSi2層)
37a ゴールド層(Au層)
37b Hfシリサイド層(HfSi2層)
38、39 Taカーバイド(TaC層)
44、45 Niシリサイド層(NiSi層)
50 Al薄膜
60 Ti層
70 Ni層
80 ハードマスク(SiN)
Claims (22)
- 基板と、
前記基板上に形成されたp型半導体領域と、前記p型半導体領域に離間して形成された第1ソース・ドレイン領域と、前記第1ソース・ドレイン領域の間の前記p型半導体領域上に形成されたアモルファス層またはエピタキシャル層を有する第1ゲート絶縁膜と、前記第1ゲート絶縁膜上に形成され4.3eV以下の仕事関数を有する第1金属の単体層である第1金属層、および前記第1金属層上に形成され前記第1金属と異なる第2金属とIV族半導体との化合物を含む第1化合物層の積層構造を有する第1ゲート電極と、を有するnチャネルMISトランジスタと、
前記基板上に前記p型半導体領域とは絶縁分離して形成されたn型半導体領域と、前記n型半導体領域に離間して形成された第2ソース・ドレイン領域と、前記第2ソース・ドレイン領域の間の前記n型半導体領域上に形成された第2ゲート絶縁膜と、前記第2ゲート絶縁膜上に形成され、前記第1化合物層と同じ組成の化合物を含む第2化合物層を有する第2ゲート電極と、を有するpチャネルMISトランジスタと、
を備えたことを特徴とする半導体装置。 - 前記第1金属は、Al、In、Ga、Tlの中から選ばれる金属であることを特徴とする請求項1記載の半導体装置。
- 前記第第1および2化合物層の化合物の仕事関数は4.8eV以上であることを特徴とする請求項1または2記載の半導体装置。
- 前記第2金属はNi、Pt、Ir、Pdの中から選ばれる1種類以上の金属であることを特徴とする請求項3記載の半導体装置。
- 前記第1金属層は層厚が1モノレイヤー以上10nm以下であることを特徴とする請求項1乃至4のいずれかに記載の半導体装置。
- 前記第1および第2ゲート絶縁膜はHf、Zr又はLaの中から選ばれる1種類以上の金属を含むことを特徴とする請求項1乃至5のいずれかに記載の半導体装置。
- 前記第2ゲート絶縁膜と前記第2化合物層との間にAu層が設けられていることを特徴とする請求項1乃至6のいずれかに記載の半導体装置。
- 前記第Au層は層厚が1モノレイヤー以上10nm以下であることを特徴とする請求項7記載の半導体装置。
- 前記第1ゲート絶縁膜と前記第1金属層との界面の少なくとも前記第1金属層側にリン、砒素、およびアンチモンのいずれか1つの非金属元素を含み、前記第2ゲート絶縁膜と前記第2化合物層との間の界面の少なくとも前記第2ゲート絶縁膜側にボロンを含んでいることを特徴とする請求項1乃至6のいずれかに記載の半導体装置。
- 前記第1および第2化合物層がNiシリサイドで構成され、前記NiシリサイドのNi/Si比が1〜2の範囲にあり、4.3eVより低い仕事関数を有する前記第1金属層がAlであることを特徴とする請求項1記載の半導体装置。
- 基板と、
前記基板上に形成されたp型半導体領域と、前記p型半導体領域に離間して形成された第1ソース・ドレイン領域と、前記第1ソース・ドレイン領域の間の前記p型半導体領域上に形成されたアモルファス層またはエピタキシャル層を有する第1ゲート絶縁膜と、前記第1ゲート絶縁膜上に形成され、金属とIV族半導体との化合物を含む第1化合物層を含む第1ゲート電極と、を有するnチャネルMISトランジスタと、
前記基板上に前記p型半導体領域とは絶縁分離して形成されたn型半導体領域と、前記n型半導体領域に離間して形成された第2ソース・ドレイン領域と、前記第2ソース・ドレイン領域の間の前記n型半導体領域上に形成された第2ゲート絶縁膜と、前記第2ゲート絶縁膜上に形成されたAu層と、このAu層上に形成され前記第1化合物層と同じ組成の化合物を含む第2化合物層を有する第2ゲート電極と、を有するpチャネルMISトランジスタと、
を備えたことを特徴とする半導体装置。 - 前記第1および第2化合物層の仕事関数は4.4eV以下であることを特徴とする請求項11記載の半導体装置。
- 前記第1および第2化合物層の化合物に含まれる金属はHf、Zr、Ti、Ta、W、Erの中から選ばれる1種類以上の金属であることを特徴とする請求項11または12記載の半導体装置。
- 前記Au層は1モノレイヤー以上10nm以下であることを特徴とする請求項11乃至13のいずれかに記載の半導体装置。
- 前記ゲート絶縁膜はHf、Zr、またはLaの中から選ばれる1種類以上の金属を含むことを特徴とする請求項11乃至14のいずれかに記載の半導体装置。
- 基板上に形成されたp型半導体領域上に第1ゲート絶縁膜を形成し、前記基板上に前記p型半導体領域と絶縁分離されて形成されたn型半導体領域上に第2ゲート絶縁膜を形成する工程と、
前記第1および第2ゲート絶縁膜上にIV族半導体を含む層を形成する工程と、
前記第1および第2ゲート絶縁膜ならびに前記IV族半導体を含む層を加工し、前記p型半導体領域上に前記IV族半導体を含む第1の層を形成するとともに前記n型半導体領域上に前記IV族半導体を含む第2の層を形成する工程と、
前記第1の層の両側の前記p型半導体領域に第1ソース・ドレイン領域を形成する工程と、
前記第2の層の両側の前記n型半導体領域に第2ソース・ドレイン領域を形成する工程と、
前記第1および第2の層上に同一の金属の膜を堆積させ、600℃以下の熱処理を行うことにより前記金属と第1および第2の層に含まれる前記IV族半導体との化合物を含む第1および第2化合物層をそれぞれ形成する工程と、
前記第1化合物層に4.3eVよりも小さい仕事関数を有する金属元素を添加する工程
と、
600℃以下の熱処理を行うことにより前記金属元素の単体層を前記第1化合物層と前記第1ゲート絶縁膜との界面に形成する工程と、
を備えたことを特徴とする半導体装置の製造方法。 - 前記金属元素はイオン注入により添加され、その注入量は1x1015cm−2以上5x1016cm−2以下であり、最大濃度が前記第1化合物層の表面からゲート絶縁膜との界面までの高さの2/3より浅くなる条件によりイオン注入することを特徴とする請求項16記載の半導体装置の製造方法。
- 基板上に形成されたp型半導体領域上に第1ゲート絶縁膜を形成し、前記基板上に前記p型半導体領域と絶縁分離されて形成されたn型半導体領域上に第2ゲート絶縁膜を形成する工程と、
前記第1および第2ゲート絶縁膜上にIV族半導体を含む層を形成する工程と、
前記第1および第2ゲート絶縁膜ならびに前記IV族半導体を含む層を加工し、前記p型半導体領域上に前記IV族半導体を含む第1の層を形成するとともに前記n型半導体領域上に前記IV族半導体を含む第2の層を形成する工程と、
前記第1の層の両側の前記p型半導体領域に第1ソース・ドレイン領域を形成する工程
と、
前記第2の層の両側の前記n型半導体領域に第2ソース・ドレイン領域を形成する工程
と、
前記第1および第2の層上に同一の金属の膜を堆積させ、600℃以下の熱処理を行う
ことにより前記金属と第1および第2の層に含まれる前記IV族半導体との化合物を含む第1および第2化合物層をそれぞれ形成する工程と、
前記第2化合物層にAuを添加する工程と、
600℃以下の熱処理を行うことにより前記Au層を前記第2化合物層と前記第2ゲート絶縁膜との界面に形成する工程と、
を備えたことを特徴とする半導体装置の製造方法。 - 前記Auはイオン注入により添加され、その量は1x1015cm−2以上5x1016cm−2以下であり、最大濃度が前記第2の層の膜厚の表面から前記第2ゲート絶縁膜の界面までの高さの2/3より浅くなる条件によりイオン注入することを特徴とする請求項18記載の半導体装置の製造方法。
- 基板上に形成されたp型半導体領域上に第1ゲート絶縁膜を形成し、前記基板上に前記p型半導体領域と絶縁分離されて形成されたn型半導体領域上に第2ゲート絶縁膜を形成する工程と、
前記第1および第2ゲート絶縁膜上にIV族半導体を含む層を形成する工程と、
前記第1および第2ゲート絶縁膜ならびに前記IV族半導体を含む層を加工し、前記p型半導体領域上に前記IV族半導体を含む第1の層を形成するとともに前記n型半導体領域上に前記IV族半導体を含む第2の層を形成する工程と、
前記第1の層の両側の前記p型半導体領域に第1ソース・ドレイン領域を形成する工程と、
前記第2の層の両側の前記n型半導体領域に第2ソース・ドレイン領域を形成する工程と、
前記第1および第2の層上に同一の金属の膜を堆積させ、600℃以下の熱処理を行うことにより前記金属と第1および第2の層に含まれる前記IV族半導体との化合物を含む第1および第2化合物層をそれぞれ形成する工程と、
前記第1化合物層上に4.3eVよりも小さい仕事関数を有する金属膜を堆積する工程と、
600℃以下の熱処理を行うことにより前記金属膜の金属元素の単体層を前記第1化合物層と前記第1ゲート絶縁膜との界面に形成する工程と、
を備えたことを特徴とする半導体装置の製造方法。 - 前記第1および第2化合物層がNiシリサイドで構成され、前記NiシリサイドのNi/Si比が1〜2の範囲にあり、4.3eVより低い仕事関数を有する前記金属膜がAlであることを特徴とする請求項20記載の半導体装置の製造方法。
- 前記金属膜の形成はスパッタリングで行うことを特徴とする請求項20または21記載の半導体装置の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006330481A JP4309911B2 (ja) | 2006-06-08 | 2006-12-07 | 半導体装置およびその製造方法 |
US11/687,834 US7737503B2 (en) | 2006-06-08 | 2007-03-19 | Semiconductor device and method for manufacturing the same |
US12/631,891 US7768077B2 (en) | 2006-06-08 | 2009-12-07 | Semiconductor device and method for manufacturing the same |
US12/824,266 US8169040B2 (en) | 2006-06-08 | 2010-06-28 | Semiconductor device and method for manufacturing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006159802 | 2006-06-08 | ||
JP2006330481A JP4309911B2 (ja) | 2006-06-08 | 2006-12-07 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008016798A true JP2008016798A (ja) | 2008-01-24 |
JP4309911B2 JP4309911B2 (ja) | 2009-08-05 |
Family
ID=39028312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006330481A Active JP4309911B2 (ja) | 2006-06-08 | 2006-12-07 | 半導体装置およびその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (3) | US7737503B2 (ja) |
JP (1) | JP4309911B2 (ja) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008192822A (ja) * | 2007-02-05 | 2008-08-21 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2010034468A (ja) * | 2008-07-31 | 2010-02-12 | Renesas Technology Corp | 半導体装置及びその製造方法 |
JP2010073865A (ja) * | 2008-09-18 | 2010-04-02 | Toshiba Corp | 半導体装置、及び半導体装置の製造方法 |
JP2011029296A (ja) * | 2009-07-23 | 2011-02-10 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法および半導体装置 |
JP2011035229A (ja) * | 2009-08-04 | 2011-02-17 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
JP2011171737A (ja) * | 2010-02-17 | 2011-09-01 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
JP2011530836A (ja) * | 2008-08-12 | 2011-12-22 | インターナショナル・ビジネス・マシーンズ・コーポレーション | デュアル仕事関数の金属ゲートを統合する際のイオン注入を用いた有効仕事関数の変化 |
JP2013162073A (ja) * | 2012-02-08 | 2013-08-19 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
WO2014178204A1 (ja) * | 2013-05-01 | 2014-11-06 | 株式会社 東芝 | 半導体装置及びその製造方法 |
KR101556449B1 (ko) | 2013-03-14 | 2015-10-01 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 쇼트키 장벽을 감소시키기 위한 금속-절연체-반도체 접촉 구조체를 구비한 금속-산화물-반도체 전계-효과 트랜지스터 |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4764030B2 (ja) | 2005-03-03 | 2011-08-31 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP5380827B2 (ja) | 2006-12-11 | 2014-01-08 | ソニー株式会社 | 半導体装置の製造方法 |
JP5117740B2 (ja) * | 2007-03-01 | 2013-01-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7768072B2 (en) * | 2007-03-27 | 2010-08-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Silicided metal gate for multi-threshold voltage configuration |
US7678694B2 (en) | 2007-04-18 | 2010-03-16 | Taiwan Semicondutor Manufacturing Company, Ltd. | Method for fabricating semiconductor device with silicided gate |
US20080272435A1 (en) * | 2007-05-02 | 2008-11-06 | Chien-Ting Lin | Semiconductor device and method of forming the same |
US20090053883A1 (en) * | 2007-08-24 | 2009-02-26 | Texas Instruments Incorporated | Method of setting a work function of a fully silicided semiconductor device, and related device |
US20090206416A1 (en) * | 2008-02-19 | 2009-08-20 | International Business Machines Corporation | Dual metal gate structures and methods |
DE102008026134A1 (de) * | 2008-05-30 | 2009-12-17 | Advanced Micro Devices, Inc., Sunnyvale | Mikrostrukturbauelement mit einer Metallisierungsstruktur mit selbstjustierten Luftspalten zwischen dichtliegenden Metallleitungen |
US8524588B2 (en) * | 2008-08-18 | 2013-09-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a single metal that performs N work function and P work function in a high-k/metal gate process |
KR20100099655A (ko) | 2009-03-03 | 2010-09-13 | 엘지전자 주식회사 | 무선통신 시스템에서 중계국의 데이터 수신방법 및 장치 |
US8895426B2 (en) * | 2009-06-12 | 2014-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate transistor, integrated circuits, systems, and fabrication methods thereof |
US20100327364A1 (en) * | 2009-06-29 | 2010-12-30 | Toshiba America Electronic Components, Inc. | Semiconductor device with metal gate |
US8304841B2 (en) * | 2009-09-14 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal gate transistor, integrated circuits, systems, and fabrication methods thereof |
US8330227B2 (en) * | 2010-02-17 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated semiconductor structure for SRAM and fabrication methods thereof |
EP2562943B1 (en) * | 2010-04-23 | 2019-06-05 | LG Electronics Inc. | Method for transceiving signals between a base station and a relay node in a multiuser multi-antenna wireless communication system, and apparatus for same |
US20120205727A1 (en) * | 2011-02-11 | 2012-08-16 | International Business Machines Corporation | Semiconductor device including multiple metal semiconductor alloy region and a gate structure covered by a continuous encapsulating layer |
JP5712778B2 (ja) * | 2011-05-10 | 2015-05-07 | 信越半導体株式会社 | Soiウェーハのsoi層の膜厚測定方法 |
CN103077969B (zh) * | 2011-10-26 | 2016-03-30 | 中国科学院微电子研究所 | 一种mos器件及其制造方法 |
JP2013115272A (ja) * | 2011-11-29 | 2013-06-10 | Toshiba Corp | 半導体装置とその製造方法 |
CN103311247B (zh) * | 2012-03-14 | 2016-07-13 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
JP6013084B2 (ja) * | 2012-08-24 | 2016-10-25 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
US10050050B2 (en) * | 2013-11-08 | 2018-08-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with metal gate memory device and metal gate logic device and method for manufacturing the same |
US9966141B2 (en) * | 2016-02-19 | 2018-05-08 | Nscore, Inc. | Nonvolatile memory cell employing hot carrier effect for data storage |
TWI806881B (zh) * | 2017-07-13 | 2023-07-01 | 美商應用材料股份有限公司 | 金屬閘極之低厚度相依功函數nMOS整合 |
JP7292140B2 (ja) * | 2019-07-25 | 2023-06-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5670279A (en) * | 1994-03-24 | 1997-09-23 | Starfire Electronic Development & Marketing, Ltd. | Lithography exposure mask derived from nanocrystal precursors and a method of manufacturing the same |
JP2002299610A (ja) | 2001-03-30 | 2002-10-11 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2003282875A (ja) | 2002-03-27 | 2003-10-03 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
JP2004214366A (ja) | 2002-12-27 | 2004-07-29 | Nec Electronics Corp | 半導体装置及びその製造方法 |
JP4091530B2 (ja) | 2003-07-25 | 2008-05-28 | 株式会社東芝 | 半導体装置の製造方法 |
US7528024B2 (en) * | 2004-05-24 | 2009-05-05 | Texas Instruments Incorporated | Dual work function metal gate integration in semiconductor devices |
US20050285208A1 (en) * | 2004-06-25 | 2005-12-29 | Chi Ren | Metal gate electrode for semiconductor devices |
JP4938262B2 (ja) | 2004-08-25 | 2012-05-23 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP4309320B2 (ja) | 2004-09-13 | 2009-08-05 | 株式会社東芝 | 半導体装置及びその製造方法 |
US20070018259A1 (en) * | 2005-07-21 | 2007-01-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual gate electrode metal oxide semciconductor transistors |
-
2006
- 2006-12-07 JP JP2006330481A patent/JP4309911B2/ja active Active
-
2007
- 2007-03-19 US US11/687,834 patent/US7737503B2/en not_active Expired - Fee Related
-
2009
- 2009-12-07 US US12/631,891 patent/US7768077B2/en not_active Expired - Fee Related
-
2010
- 2010-06-28 US US12/824,266 patent/US8169040B2/en active Active
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008192822A (ja) * | 2007-02-05 | 2008-08-21 | Toshiba Corp | 半導体装置およびその製造方法 |
JP2010034468A (ja) * | 2008-07-31 | 2010-02-12 | Renesas Technology Corp | 半導体装置及びその製造方法 |
JP2011530836A (ja) * | 2008-08-12 | 2011-12-22 | インターナショナル・ビジネス・マシーンズ・コーポレーション | デュアル仕事関数の金属ゲートを統合する際のイオン注入を用いた有効仕事関数の変化 |
US9564505B2 (en) | 2008-08-12 | 2017-02-07 | Globalfoundries Inc. | Changing effective work function using ion implantation during dual work function metal gate integration |
US8753936B2 (en) | 2008-08-12 | 2014-06-17 | International Business Machines Corporation | Changing effective work function using ion implantation during dual work function metal gate integration |
JP2010073865A (ja) * | 2008-09-18 | 2010-04-02 | Toshiba Corp | 半導体装置、及び半導体装置の製造方法 |
JP2011029296A (ja) * | 2009-07-23 | 2011-02-10 | Fujitsu Semiconductor Ltd | 半導体装置の製造方法および半導体装置 |
JP2011035229A (ja) * | 2009-08-04 | 2011-02-17 | Fujitsu Semiconductor Ltd | 半導体装置及びその製造方法 |
JP2011171737A (ja) * | 2010-02-17 | 2011-09-01 | Renesas Electronics Corp | 半導体装置及びその製造方法 |
JP2013162073A (ja) * | 2012-02-08 | 2013-08-19 | Toyota Central R&D Labs Inc | 半導体装置とその製造方法 |
KR101556449B1 (ko) | 2013-03-14 | 2015-10-01 | 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 | 쇼트키 장벽을 감소시키기 위한 금속-절연체-반도체 접촉 구조체를 구비한 금속-산화물-반도체 전계-효과 트랜지스터 |
US9240480B2 (en) | 2013-03-14 | 2016-01-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal-oxide-semiconductor field-effect transistor with metal-insulator semiconductor contact structure to reduce Schottky barrier |
US9536973B2 (en) | 2013-03-14 | 2017-01-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Metal-oxide-semiconductor field-effect transistor with metal-insulator-semiconductor contact structure to reduce schottky barrier |
WO2014178204A1 (ja) * | 2013-05-01 | 2014-11-06 | 株式会社 東芝 | 半導体装置及びその製造方法 |
US9543376B2 (en) | 2013-05-01 | 2017-01-10 | Kabushiki Kaisha Toshiba | Semiconductor device and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US20100078731A1 (en) | 2010-04-01 |
US8169040B2 (en) | 2012-05-01 |
US20080029822A1 (en) | 2008-02-07 |
US7768077B2 (en) | 2010-08-03 |
JP4309911B2 (ja) | 2009-08-05 |
US20100258880A1 (en) | 2010-10-14 |
US7737503B2 (en) | 2010-06-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4309911B2 (ja) | 半導体装置およびその製造方法 | |
US7485936B2 (en) | Semiconductor device and method of manufacturing the same | |
JP4939960B2 (ja) | 半導体装置およびその製造方法 | |
JP4327820B2 (ja) | 半導体装置およびその製造方法 | |
JP5288789B2 (ja) | 半導体装置及びその製造方法 | |
JP5569173B2 (ja) | 半導体装置の製造方法及び半導体装置 | |
JP5221112B2 (ja) | 半導体装置の製造方法および半導体装置 | |
JP2007005721A (ja) | 半導体装置およびその製造方法 | |
WO2006001271A1 (ja) | 半導体装置及びその製造方法 | |
US7612413B2 (en) | Semiconductor device and manufacturing method thereof | |
US9196706B2 (en) | Method for manufacturing P-type MOSFET | |
JP4398939B2 (ja) | 半導体装置 | |
US20100252888A1 (en) | Semiconductor device | |
US20070105317A1 (en) | Method of manufacturing semiconductor device | |
WO2014082333A1 (zh) | N型mosfet的制造方法 | |
US7968956B2 (en) | Semiconductor device | |
JP4163164B2 (ja) | 半導体装置およびその製造方法 | |
JP5086665B2 (ja) | 半導体装置およびその製造方法 | |
JP5056418B2 (ja) | 半導体装置およびその製造方法 | |
JP2010153621A (ja) | 半導体装置およびその製造方法 | |
JP2009060125A (ja) | 半導体装置およびその製造方法 | |
JP2008277420A (ja) | 半導体装置およびその製造方法 | |
JP2008235711A (ja) | 半導体装置およびその製造方法 | |
JP2007266293A (ja) | 半導体装置、および半導体装置の製造方法。 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080327 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20080826 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080829 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20081024 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20081219 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090128 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20090410 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20090508 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 4309911 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120515 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120515 Year of fee payment: 3 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130515 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130515 Year of fee payment: 4 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140515 Year of fee payment: 5 |