JP2007538406A - 熱電ナノワイヤ素子 - Google Patents
熱電ナノワイヤ素子 Download PDFInfo
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- JP2007538406A JP2007538406A JP2007527258A JP2007527258A JP2007538406A JP 2007538406 A JP2007538406 A JP 2007538406A JP 2007527258 A JP2007527258 A JP 2007527258A JP 2007527258 A JP2007527258 A JP 2007527258A JP 2007538406 A JP2007538406 A JP 2007538406A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
Abstract
Description
Claims (25)
- 第1電極;
前記第1電極に隣接する誘電材料;
前記誘電材料をはさんで前記第1電極の反対側にある第2電極;及び、
前記第1電極と前記第2電極との間を延在する少なくとも一のナノワイヤ;
を有する熱電装置。 - 前記少なくとも一のナノワイヤがビスマス含有材料を有することを特徴とする、請求項1に記載の装置。
- 前記誘電材料が多孔性誘電材料を有することを特徴とする、請求項1に記載の装置。
- 前記多孔性誘電材料が多孔性アルミナを有することを特徴とする、請求項3に記載の装置。
- 前記第1電極と電気的に接続する、負に帯電した導線;及び、
前記第2電極と電気的に接続する、正に帯電した導線;
をさらに有する、請求項1に記載の装置。 - 動作時において、他の領域よりも高い放熱レートを有する少なくとも一の領域を有するマイクロエレクトロニクスダイス;
前記高熱領域を含む前記マイクロエレクトロニクスダイスに隣接する第1電極;
前記第1電極に隣接する誘電材料;
前記誘電材料をはさんで前記第1電極の反対側にある第2電極;及び、
前記第1電極と前記第2電極との間を延在する複数のナノワイヤ;
を有する熱電パッケージ。 - 前記ナノワイヤがより高密度で前記少なくとも一のより高放熱レート領域に隣接して設けられることを特徴とする、請求項6に記載のパッケージ。
- 前記少なくとも一のナノワイヤがビスマス含有材料を有することを特徴とする、請求項6に記載のパッケージ。
- 前記誘電材料が多孔性誘電材料を有することを特徴とする、請求項6に記載のパッケージ。
- 前記多孔性誘電材料が多孔性アルミナを有することを特徴とする、請求項9に記載のパッケージ。
- 前記第1電極と電気的に接続する、負に帯電した導線;及び、
前記第2電極と電気的に接続する、正に帯電した導線;
をさらに有する、請求項6に記載のパッケージ。 - 第1電極を供する工程;
前記第1電極に隣接して誘電材料を設ける工程;
前記誘電材料を貫通する、少なくとも一のナノスケール開口部を形成する工程;
前記少なくとも一のナノスケール開口部内部に導電性材料を供給することで、前記第1電極と接触する少なくとも一のナノワイヤを作製する工程;及び、
前記誘電材料をはさんで前記第1電極の反対側に、前記少なくとも一のナノワイヤと接続する第2電極を作製する工程;
を有する方法。 - 前記の導電性材料を供給する工程は、ビスマス含有材料を供給する工程を有することを特徴とする、請求項12に記載の方法。
- 前記の誘電材料を供給する工程は、多孔性誘電材料を供給する工程を有することを特徴とする、請求項12に記載の方法。
- 前記の多孔性誘電材料を供給する工程は、多孔性アルミナを供給する工程を有することを特徴とする、請求項14に記載の方法。
- 前記第1電極と電気的に接続する、負に帯電した導線;及び、
前記第2電極と電気的に接続する、正に帯電した導線;
をさらに有する、請求項12に記載の方法。 - 第1電極を供する工程;
前記第1電極に隣接して多孔性誘電材料を設ける工程;
前記多孔性誘電材料に導電性材料を供給し、前記導電性材料を前記の多孔性材料の少なくとも一の開口部で延在させることによって、前記第1電極と接触する少なくとも一のナノワイヤを作製する工程;及び、
前記誘電材料をはさんで前記第1電極の反対側に、前記少なくとも一のナノワイヤと接続する第2電極を作製する工程;
を有する方法。 - 前記の多孔性誘電材料に導電性材料を供給する工程は、前記多孔性誘電材料にビスマス含有材料を供給する工程を有することを特徴とする、請求項17に記載の方法。
- 前記の多孔性誘電材料を供給する工程は、多孔性アルミナを供給する工程を有することを特徴とする、請求項19に記載の方法。
- 前記第1電極と電気的に接続する、負に帯電した導線;及び、
前記第2電極と電気的に接続する、正に帯電した導線;
をさらに有する、請求項17に記載の方法。 - 筐体内部にある外部基板;
前記外部基板と結合する入力装置;
前記外部基板と結合するディスプレイ装置;及び、
前記外部基板に取り付けられている少なくとも一のマイクロエレクトロニクス素子パッケージであって:
第1電極;
前記第1電極に隣接する誘電材料;
前記誘電材料をはさんで前記第1電極の反対側にある第2電極;及び、
前記第1電極と前記第2電極との間を延在する少なくとも一のナノワイヤ;
を有するパッケージ;
を有するエレクトロニクスシステム。 - 前記少なくとも一のナノワイヤがビスマス含有材料を有することを特徴とする、請求項21に記載のシステム。
- 前記誘電材料が多孔性誘電材料を有することを特徴とする、請求項21に記載のシステム。
- 前記多孔性誘電材料が多孔性アルミナを有することを特徴とする、請求項23に記載のシステム。
- 前記第1電極と電気的に接続する、負に帯電した導線;及び、
前記第2電極と電気的に接続する、正に帯電した導線;
をさらに有する、請求項21に記載のシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/849,964 US20050257821A1 (en) | 2004-05-19 | 2004-05-19 | Thermoelectric nano-wire devices |
PCT/US2005/014970 WO2005119800A2 (en) | 2004-05-19 | 2005-04-29 | Thermoelectric nano-wire devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007538406A true JP2007538406A (ja) | 2007-12-27 |
JP4307506B2 JP4307506B2 (ja) | 2009-08-05 |
Family
ID=35079409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007527258A Expired - Fee Related JP4307506B2 (ja) | 2004-05-19 | 2005-04-29 | 熱電ナノワイヤ素子 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20050257821A1 (ja) |
JP (1) | JP4307506B2 (ja) |
KR (1) | KR100865595B1 (ja) |
CN (1) | CN100592541C (ja) |
DE (1) | DE112005001094B4 (ja) |
TW (1) | TWI266401B (ja) |
WO (1) | WO2005119800A2 (ja) |
Cited By (5)
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JP2008047892A (ja) * | 2006-07-20 | 2008-02-28 | Commissariat A L'energie Atomique | 沸騰及び凝縮による熱伝達を利用した電子部品及びその製造方法 |
JP2008523614A (ja) * | 2004-12-07 | 2008-07-03 | トヨタ テクニカル センター,ユー.エス.エー.,インコーポレイティド | ナノ構造のバルク熱電材料 |
JP2012174813A (ja) * | 2011-02-18 | 2012-09-10 | Kyushu Univ | 熱電変換材料及びその製造方法 |
JP2014505998A (ja) * | 2010-12-03 | 2014-03-06 | アルファベット エナジー インコーポレイテッド | 埋め込み型ナノ構造を持つ低熱伝導マトリクスとその方法 |
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2004
- 2004-05-19 US US10/849,964 patent/US20050257821A1/en not_active Abandoned
-
2005
- 2005-04-29 JP JP2007527258A patent/JP4307506B2/ja not_active Expired - Fee Related
- 2005-04-29 DE DE200511001094 patent/DE112005001094B4/de not_active Expired - Fee Related
- 2005-04-29 KR KR1020067024122A patent/KR100865595B1/ko active IP Right Grant
- 2005-04-29 WO PCT/US2005/014970 patent/WO2005119800A2/en active Application Filing
- 2005-04-29 CN CN200580016457A patent/CN100592541C/zh not_active Expired - Fee Related
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008523614A (ja) * | 2004-12-07 | 2008-07-03 | トヨタ テクニカル センター,ユー.エス.エー.,インコーポレイティド | ナノ構造のバルク熱電材料 |
JP2008047892A (ja) * | 2006-07-20 | 2008-02-28 | Commissariat A L'energie Atomique | 沸騰及び凝縮による熱伝達を利用した電子部品及びその製造方法 |
KR101395088B1 (ko) * | 2010-02-08 | 2014-05-16 | 한국전자통신연구원 | 열전 어레이 |
JP2014505998A (ja) * | 2010-12-03 | 2014-03-06 | アルファベット エナジー インコーポレイテッド | 埋め込み型ナノ構造を持つ低熱伝導マトリクスとその方法 |
JP2012174813A (ja) * | 2011-02-18 | 2012-09-10 | Kyushu Univ | 熱電変換材料及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100592541C (zh) | 2010-02-24 |
CN1957483A (zh) | 2007-05-02 |
DE112005001094B4 (de) | 2015-05-13 |
TW200608548A (en) | 2006-03-01 |
DE112005001094T5 (de) | 2007-04-26 |
JP4307506B2 (ja) | 2009-08-05 |
KR20070015582A (ko) | 2007-02-05 |
TWI266401B (en) | 2006-11-11 |
WO2005119800A3 (en) | 2006-03-23 |
KR100865595B1 (ko) | 2008-10-27 |
WO2005119800A2 (en) | 2005-12-15 |
US20050257821A1 (en) | 2005-11-24 |
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