JP5846894B2 - 内蔵熱電冷却機を備えるマイクロエレクトロニクス・アセンブリおよびその製造方法 - Google Patents
内蔵熱電冷却機を備えるマイクロエレクトロニクス・アセンブリおよびその製造方法 Download PDFInfo
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- JP5846894B2 JP5846894B2 JP2011278001A JP2011278001A JP5846894B2 JP 5846894 B2 JP5846894 B2 JP 5846894B2 JP 2011278001 A JP2011278001 A JP 2011278001A JP 2011278001 A JP2011278001 A JP 2011278001A JP 5846894 B2 JP5846894 B2 JP 5846894B2
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N15/00—Thermoelectric devices without a junction of dissimilar materials; Thermomagnetic devices, e.g. using the Nernst-Ettingshausen effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
- H10N10/17—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the structure or configuration of the cell or thermocouple forming the device
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Chemical & Material Sciences (AREA)
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- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Description
thermoelectric cooler)に関する。
antimony skutteridite)材料から形成される。上述のように、超格子熱電対の各層は、はんだ付けによって隣接した層に接合され、典型的には厚さ約5ミクロンである構造を達成する。このようにして形成された熱電対は、上述のように、TECを形成するために共に接合され、それは、その後、上述のように、マイクロエレクトロニクス装置に搭載される。
102 マイクロエレクトロニクス配置
110 ダイ
116 N型電極
118 P型電極
120 TEC
136 DC電源
137 電気回路
138 ヒート・シンク
140 フィードバック制御ループ
Claims (5)
- マイクロエレクトロニクス・アセンブリにおいて、
マイクロエレクトロニクス装置と、
内蔵TECと前記マイクロエレクトロニクス装置との間に搭載材料を介在させないで、前記マイクロエレクトロニクス装置に結合された内蔵TECと、
前記内蔵TECに電気的に接続され、前記内蔵TECに電流を供給するために適合した電源を含む電気回路と、
前記マイクロエレクトロニクス装置の温度の関数として前記内蔵TECによって提供される冷却の範囲を制御するために、前記マイクロエレクトロニクス装置のシリコン基板に直接結合された温度センサを有し、かつ前記内蔵TECに結合された前記電気回路に結合されるフィードバック制御ループと、を含み、
前記内蔵TECは、N型電極、P型電極、および、前記N型電極と前記P型電極とを互いに電気的に結合する複数の導体素子を含む少なくとも1つのカップルからなり、前記カップルそれぞれにおいて、少なくとも1つの前記導体素子はそれぞれの前記N型電極および前記P型電極を越えて延びるとともに、前記マイクロエレクトロニクス装置と接触し、前記内蔵TECは、50ミクロンから200ミクロンの範囲の厚さを有し、かつ、前記導体素子のそれぞれ、前記N型電極のそれぞれ、および、前記P型電極のそれぞれの間のパターン化された絶縁体層を含む、
ことを特徴とするマイクロエレクトロニクス・アセンブリ。 - 前記フィードバック制御ループは、前記マイクロエレクトロニクス装置の温度を検出するために、前記マイクロエレクトロニクス装置の前記シリコン基板に結合される温度センサを含み、前記温度センサは、前記電源の電圧を制御することにより前記内蔵TECを介して電流を制御する前記フィードバック制御ループに信号を伝えることを特徴とする請求項1記載のマイクロエレクトロニクス・アセンブリ。
- 前記マイクロエレクトロニクス装置から取り出された熱を放散するために、前記内蔵TECに結合されたヒート・シンクをさらに含むことを特徴とする請求項1記載のマイクロエレクトロニクス・アセンブリ。
- 前記マイクロエレクトロニクス装置は、前記内蔵TECに結合するために適合した側面上に酸化層を含むことを特徴とする請求項1記載のマイクロエレクトロニクス・アセンブリ。
- マイクロエレクトロニクス・システムであって、
マイクロエレクトロニクス装置、および、
内蔵TECと前記マイクロエレクトロニクス装置との間に搭載材料を介在させないで、前記マイクロエレクトロニクス装置に結合された内蔵TEC、から成るマイクロエレクトロニクス・アセンブリと、
前記内蔵TECに電気的に接続され、前記内蔵TECに電流を供給するために適合した電源を含む電気回路と、
前記マイクロエレクトロニクス装置の温度の関数として前記内蔵TECによって提供される冷却の範囲を制御するために、前記マイクロエレクトロニクス装置のシリコン基板に直接結合された温度センサを有し、かつ前記内蔵TECに結合された前記電気回路に結合されるフィードバック制御ループと、
前記マイクロエレクトロニクス・アセンブリに結合されたグラフィック・プロセッサと、を含み、
前記内蔵TECは、N型電極、P型電極、および、前記N型電極と前記P型電極とを互いに電気的に結合する複数の導体素子を含む少なくとも1つのカップルからなり、前記カップルそれぞれにおいて、少なくとも1つの前記導体素子はそれぞれの前記N型電極および前記P型電極を越えて延びるとともに、前記マイクロエレクトロニクス装置と接触し、前記内蔵TECは、50ミクロンから200ミクロンの範囲の厚さを有し、かつ、前記導体素子のそれぞれ、前記N型電極のそれぞれ、および、前記P型電極のそれぞれの間のパターン化された絶縁体層を含む、
ことを特徴とするマイクロエレクトロニクス・システム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/024,357 US8686277B2 (en) | 2004-12-27 | 2004-12-27 | Microelectronic assembly including built-in thermoelectric cooler and method of fabricating same |
US11/024,357 | 2004-12-27 |
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JP2007548609A Division JP4922947B2 (ja) | 2004-12-27 | 2005-12-27 | 内蔵熱電冷却機を備えるマイクロエレクトロニクス・アセンブリおよびその製造方法 |
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JP2012099836A JP2012099836A (ja) | 2012-05-24 |
JP5846894B2 true JP5846894B2 (ja) | 2016-01-20 |
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JP2007548609A Expired - Fee Related JP4922947B2 (ja) | 2004-12-27 | 2005-12-27 | 内蔵熱電冷却機を備えるマイクロエレクトロニクス・アセンブリおよびその製造方法 |
JP2011278001A Expired - Fee Related JP5846894B2 (ja) | 2004-12-27 | 2011-12-20 | 内蔵熱電冷却機を備えるマイクロエレクトロニクス・アセンブリおよびその製造方法 |
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US (2) | US8686277B2 (ja) |
EP (1) | EP1834354B1 (ja) |
JP (2) | JP4922947B2 (ja) |
KR (1) | KR100897422B1 (ja) |
CN (1) | CN101091246B (ja) |
SG (1) | SG158173A1 (ja) |
TW (1) | TWI313077B (ja) |
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Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8686277B2 (en) | 2004-12-27 | 2014-04-01 | Intel Corporation | Microelectronic assembly including built-in thermoelectric cooler and method of fabricating same |
US20060243315A1 (en) * | 2005-04-29 | 2006-11-02 | Chrysler Gregory M | Gap-filling in electronic assemblies including a TEC structure |
US8058724B2 (en) * | 2007-11-30 | 2011-11-15 | Ati Technologies Ulc | Holistic thermal management system for a semiconductor chip |
KR101524544B1 (ko) * | 2008-03-28 | 2015-06-02 | 페어차일드코리아반도체 주식회사 | 펠티어 효과를 이용한 열전기 모듈을 포함하는 전력 소자패키지 및 그 제조 방법 |
US8598700B2 (en) | 2008-06-27 | 2013-12-03 | Qualcomm Incorporated | Active thermal control for stacked IC devices |
DE102008049726B4 (de) * | 2008-09-30 | 2012-02-09 | Advanced Micro Devices, Inc. | Gestapelte Chipkonfiguration mit stromgespeistem Wärmeübertragungssystem und Verfahren zum Steuern der Temperatur in einem Halbleiterbauelement |
US8026567B2 (en) * | 2008-12-22 | 2011-09-27 | Taiwan Semiconductor Manufactuirng Co., Ltd. | Thermoelectric cooler for semiconductor devices with TSV |
TW201042789A (en) * | 2009-04-02 | 2010-12-01 | Basf Se | Thermoelectric material coated with a protective layer |
US8262894B2 (en) | 2009-04-30 | 2012-09-11 | Moses Lake Industries, Inc. | High speed copper plating bath |
DE102010029526B4 (de) | 2010-05-31 | 2012-05-24 | GLOBALFOUNDRIES Dresden Module One Ltd. Liability Company & Co. KG | Halbleiterbauelement mit einer gestapelten Chipkonfiguration mit einem integrierten Peltier-Element |
US9515245B2 (en) * | 2010-07-23 | 2016-12-06 | King Abdullah University Of Science And Technology | Apparatus, system, and method for on-chip thermoelectricity generation |
US9331020B2 (en) * | 2010-07-28 | 2016-05-03 | Ali Yazdani | Electronic interconnects and devices with topological surface states and methods for fabricating same |
CN102130076B (zh) * | 2010-12-25 | 2012-05-30 | 紫光股份有限公司 | 一种热电式计算机芯片散热器 |
JP5718671B2 (ja) * | 2011-02-18 | 2015-05-13 | 国立大学法人九州大学 | 熱電変換材料及びその製造方法 |
GB2494880B (en) * | 2011-09-21 | 2018-04-11 | Bae Systems Plc | Layer assembly for heat exchanger |
US9203010B2 (en) | 2012-02-08 | 2015-12-01 | King Abdullah University Of Science And Technology | Apparatuses and systems for embedded thermoelectric generators |
CN102637816A (zh) * | 2012-05-15 | 2012-08-15 | 厦门多彩光电子科技有限公司 | Led半导体散热支架 |
DE112013006978B4 (de) * | 2013-06-18 | 2021-12-16 | Intel Corporation | Integrierte thermoelektrische Kühlung |
US9625186B2 (en) | 2013-08-29 | 2017-04-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cooling system for 3D IC |
TWI514528B (zh) | 2013-10-04 | 2015-12-21 | Lextar Electronics Corp | 半導體晶片結構 |
US10559864B2 (en) | 2014-02-13 | 2020-02-11 | Birmingham Technologies, Inc. | Nanofluid contact potential difference battery |
JP6191512B2 (ja) * | 2014-03-06 | 2017-09-06 | 富士通株式会社 | 熱電変換素子及びその製造方法 |
CN105336848B (zh) * | 2014-06-12 | 2018-01-09 | 中芯国际集成电路制造(上海)有限公司 | Mram器件的形成方法 |
US10544966B2 (en) | 2015-07-23 | 2020-01-28 | Cepheid | Thermal control device and methods of use |
JP7052200B2 (ja) * | 2016-03-24 | 2022-04-12 | 三菱マテリアル株式会社 | 熱電変換モジュール |
CN108511404B (zh) * | 2017-02-28 | 2020-03-10 | 华为技术有限公司 | 芯片封装系统 |
CN107968315A (zh) * | 2017-12-14 | 2018-04-27 | 苏州矩阵光电有限公司 | 一种半导体激光器 |
CN111370993A (zh) * | 2020-04-15 | 2020-07-03 | 广东鸿芯科技有限公司 | 一种具有恒温控制功能的半导体激光器件及其制造方法 |
CN111370396B (zh) * | 2020-04-15 | 2021-07-20 | 广东鸿芯科技有限公司 | 一种具有恒温控制功能的光电模块组件及其制造方法 |
US11649525B2 (en) | 2020-05-01 | 2023-05-16 | Birmingham Technologies, Inc. | Single electron transistor (SET), circuit containing set and energy harvesting device, and fabrication method |
US11417506B1 (en) | 2020-10-15 | 2022-08-16 | Birmingham Technologies, Inc. | Apparatus including thermal energy harvesting thermionic device integrated with electronics, and related systems and methods |
US11985895B2 (en) * | 2021-05-17 | 2024-05-14 | The United States Of America As Represented By The Secretary Of The Army | Thermoelectrically actuated phase change thermal energy storage (TES) module |
US11616186B1 (en) | 2021-06-28 | 2023-03-28 | Birmingham Technologies, Inc. | Thermal-transfer apparatus including thermionic devices, and related methods |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4887147A (en) * | 1987-07-01 | 1989-12-12 | Digital Equipment Corporation | Thermal package for electronic components |
JPH03167870A (ja) | 1989-11-28 | 1991-07-19 | Matsushita Electric Ind Co Ltd | 半導体集積回路 |
JP4001104B2 (ja) | 1994-06-20 | 2007-10-31 | ヤマハ株式会社 | 半導体装置 |
US5837929A (en) * | 1994-07-05 | 1998-11-17 | Mantron, Inc. | Microelectronic thermoelectric device and systems incorporating such device |
JPH0964255A (ja) | 1995-08-25 | 1997-03-07 | Murata Mfg Co Ltd | 半導体装置 |
JPH11214598A (ja) | 1998-01-23 | 1999-08-06 | Takeshi Aoki | 大規模集積回路(lsi)チップの冷却方法 |
US6388185B1 (en) * | 1998-08-07 | 2002-05-14 | California Institute Of Technology | Microfabricated thermoelectric power-generation devices |
JP2000077580A (ja) * | 1998-08-28 | 2000-03-14 | Nissan Motor Co Ltd | 温度制御型半導体装置 |
JP4121679B2 (ja) * | 1998-11-18 | 2008-07-23 | 株式会社小松製作所 | 温度調節器及びその製造方法 |
US6250085B1 (en) | 1999-05-26 | 2001-06-26 | Eliahou Tousson | Temperature self-regulated integrated circuits and devices |
US6196002B1 (en) * | 1999-06-24 | 2001-03-06 | Advanced Micro Devices, Inc. | Ball grid array package having thermoelectric cooler |
DE10022726C2 (de) * | 1999-08-10 | 2003-07-10 | Matsushita Electric Works Ltd | Thermoelektrisches Modul mit verbessertem Wärmeübertragungsvermögen und Verfahren zum Herstellen desselben |
JP3874396B2 (ja) * | 2000-01-13 | 2007-01-31 | パイオニア株式会社 | 電子放出素子及びその製造方法並びに電子放出素子を用いた表示装置 |
US6614109B2 (en) | 2000-02-04 | 2003-09-02 | International Business Machines Corporation | Method and apparatus for thermal management of integrated circuits |
US6958523B2 (en) * | 2000-09-15 | 2005-10-25 | Texas Instruments Incorporated | On chip heating for electrical trimming of polysilicon and polysilicon-silicon-germanium resistors and electrically programmable fuses for integrated circuits |
US6559538B1 (en) | 2000-10-20 | 2003-05-06 | Bae Systems Information And Electronic Systems Integration Inc. | Integrated circuit device having a built-in thermoelectric cooling mechanism |
US6588217B2 (en) | 2000-12-11 | 2003-07-08 | International Business Machines Corporation | Thermoelectric spot coolers for RF and microwave communication integrated circuits |
US6800933B1 (en) | 2001-04-23 | 2004-10-05 | Advanced Micro Devices, Inc. | Integrated circuit cooling device |
US6674128B1 (en) | 2001-04-27 | 2004-01-06 | Advanced Micro Devices, Inc. | Semiconductor-on-insulator device with thermoelectric cooler on surface |
JP2003017763A (ja) * | 2001-07-02 | 2003-01-17 | Okano Electric Wire Co Ltd | 熱電モジュール用基板およびその製造方法並びに熱電モジュール用基板を用いた熱電モジュール |
JP2003243731A (ja) | 2001-12-12 | 2003-08-29 | Yaskawa Electric Corp | 半導体基板、半導体装置の製造方法およびその駆動方法 |
JP4147800B2 (ja) * | 2002-04-02 | 2008-09-10 | ソニー株式会社 | 熱電変換装置の製造方法 |
JP2005524989A (ja) * | 2002-05-08 | 2005-08-18 | フォーセン テクノロジー インク | 高効率固体光源及びその使用方法及びその製造方法 |
US6981380B2 (en) * | 2002-12-20 | 2006-01-03 | Intel Corporation | Thermoelectric cooling for microelectronic packages and dice |
JP2004228485A (ja) | 2003-01-27 | 2004-08-12 | Hitachi Ltd | 半導体チップ積層パッケージ構造、及び、かかるパッケージ構造に好適な半導体装置 |
CN100397671C (zh) * | 2003-10-29 | 2008-06-25 | 京瓷株式会社 | 热电换能模块 |
JP4485865B2 (ja) * | 2004-07-13 | 2010-06-23 | Okiセミコンダクタ株式会社 | 半導体装置、及びその製造方法 |
US8686277B2 (en) | 2004-12-27 | 2014-04-01 | Intel Corporation | Microelectronic assembly including built-in thermoelectric cooler and method of fabricating same |
-
2004
- 2004-12-27 US US11/024,357 patent/US8686277B2/en active Active
-
2005
- 2005-12-26 TW TW094146538A patent/TWI313077B/zh not_active IP Right Cessation
- 2005-12-27 CN CN2005800449240A patent/CN101091246B/zh not_active Expired - Fee Related
- 2005-12-27 SG SG200908614-1A patent/SG158173A1/en unknown
- 2005-12-27 KR KR1020077017531A patent/KR100897422B1/ko active IP Right Grant
- 2005-12-27 JP JP2007548609A patent/JP4922947B2/ja not_active Expired - Fee Related
- 2005-12-27 WO PCT/US2005/047594 patent/WO2006072063A1/en active Application Filing
- 2005-12-27 EP EP05856066.5A patent/EP1834354B1/en active Active
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Also Published As
Publication number | Publication date |
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JP4922947B2 (ja) | 2012-04-25 |
US8686277B2 (en) | 2014-04-01 |
SG158173A1 (en) | 2010-01-29 |
US20060137732A1 (en) | 2006-06-29 |
JP2012099836A (ja) | 2012-05-24 |
EP1834354A1 (en) | 2007-09-19 |
KR100897422B1 (ko) | 2009-05-14 |
EP1834354B1 (en) | 2020-11-25 |
JP2008526035A (ja) | 2008-07-17 |
CN101091246A (zh) | 2007-12-19 |
WO2006072063A1 (en) | 2006-07-06 |
US20150332987A1 (en) | 2015-11-19 |
TWI313077B (en) | 2009-08-01 |
TW200637042A (en) | 2006-10-16 |
KR20070095377A (ko) | 2007-09-28 |
CN101091246B (zh) | 2010-10-06 |
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