JP2007535662A - 統合電子センサ - Google Patents

統合電子センサ Download PDF

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Publication number
JP2007535662A
JP2007535662A JP2007505733A JP2007505733A JP2007535662A JP 2007535662 A JP2007535662 A JP 2007535662A JP 2007505733 A JP2007505733 A JP 2007505733A JP 2007505733 A JP2007505733 A JP 2007505733A JP 2007535662 A JP2007535662 A JP 2007535662A
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Japan
Prior art keywords
sensor device
integrated sensor
wiring layer
integrated
sensor
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JP2007505733A
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Japanese (ja)
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JP2007535662A5 (https=
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カミンズ，チモシー
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/22—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance
    • G01N27/223—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating capacitance for determining moisture content, e.g. humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/121—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid for determining moisture content, e.g. humidity, of the fluid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00

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  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Electrochemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Geometry (AREA)
  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
JP2007505733A 2004-04-02 2005-03-30 統合電子センサ Pending JP2007535662A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US55856504P 2004-04-02 2004-04-02
PCT/IE2005/000033 WO2005095936A1 (en) 2004-04-02 2005-03-30 An integrated electronic sensor

Publications (2)

Publication Number Publication Date
JP2007535662A true JP2007535662A (ja) 2007-12-06
JP2007535662A5 JP2007535662A5 (https=) 2008-05-29

Family

ID=34962453

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007505733A Pending JP2007535662A (ja) 2004-04-02 2005-03-30 統合電子センサ

Country Status (5)

Country Link
US (7) US7554134B2 (https=)
EP (1) EP1730506B1 (https=)
JP (1) JP2007535662A (https=)
CN (2) CN1961209A (https=)
WO (1) WO2005095936A1 (https=)

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JP2013213811A (ja) * 2012-03-30 2013-10-17 Nxp Bv ガスセンサを有する集積回路
JP2014187124A (ja) * 2013-03-22 2014-10-02 Fujitsu Ltd 熱電素子搭載モジュール及びその製造方法
KR20160011749A (ko) * 2014-07-22 2016-02-02 매그나칩 반도체 유한회사 배선 사이의 중공에 형성된 습도 센서 및 그 제조 방법
JP2016118558A (ja) * 2014-12-23 2016-06-30 イーエム・ミクロエレクトロニク−マリン・エス アー 湿度センサ
KR20170105115A (ko) * 2015-02-27 2017-09-18 이엠. 마이크로일레크트로닉-마린 쏘시에떼 아노님 열 모듈을 갖는 습도 센서
KR101874839B1 (ko) * 2012-04-25 2018-07-05 이플러스이엘렉트로닉 게엠베하 습도 센서 장치
JP2022549115A (ja) * 2019-09-19 2022-11-24 ユニベルシテ カトリック ドゥ ルーベン 複数の検知能力を有するマルチピクセル・ガス・マイクロセンサの製造方法

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