JP2007529623A - 硫化物膜の真空堆積中における酸素及び水の除去(ゲッタリング)方法 - Google Patents
硫化物膜の真空堆積中における酸素及び水の除去(ゲッタリング)方法 Download PDFInfo
- Publication number
- JP2007529623A JP2007529623A JP2007503159A JP2007503159A JP2007529623A JP 2007529623 A JP2007529623 A JP 2007529623A JP 2007503159 A JP2007503159 A JP 2007503159A JP 2007503159 A JP2007503159 A JP 2007503159A JP 2007529623 A JP2007529623 A JP 2007529623A
- Authority
- JP
- Japan
- Prior art keywords
- deposition
- species
- getter
- phosphor
- deposition chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 75
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims description 37
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 title claims description 31
- 229910052760 oxygen Inorganic materials 0.000 title claims description 31
- 239000001301 oxygen Substances 0.000 title claims description 31
- 229910001868 water Inorganic materials 0.000 title claims description 24
- 238000005247 gettering Methods 0.000 title abstract description 9
- 238000001771 vacuum deposition Methods 0.000 title description 7
- 125000000101 thioether group Chemical group 0.000 title 1
- 230000008021 deposition Effects 0.000 claims abstract description 120
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 80
- 239000000203 mixture Substances 0.000 claims abstract description 76
- 239000010408 film Substances 0.000 claims abstract description 60
- 239000000463 material Substances 0.000 claims abstract description 37
- 238000001704 evaporation Methods 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 11
- 238000000151 deposition Methods 0.000 claims description 126
- 239000000758 substrate Substances 0.000 claims description 37
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 29
- 229910052788 barium Inorganic materials 0.000 claims description 21
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 14
- 150000001875 compounds Chemical class 0.000 claims description 14
- 230000008020 evaporation Effects 0.000 claims description 14
- 229910052693 Europium Inorganic materials 0.000 claims description 12
- 239000010936 titanium Substances 0.000 claims description 12
- 229910052719 titanium Inorganic materials 0.000 claims description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 11
- 239000008188 pellet Substances 0.000 claims description 10
- 238000007740 vapor deposition Methods 0.000 claims description 10
- -1 europium activated calcium Chemical class 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- COHCXWLRUISKOO-UHFFFAOYSA-N [AlH3].[Ba] Chemical compound [AlH3].[Ba] COHCXWLRUISKOO-UHFFFAOYSA-N 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 6
- 229910052717 sulfur Inorganic materials 0.000 claims description 6
- 239000011593 sulfur Substances 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 4
- RAHZWNYVWXNFOC-UHFFFAOYSA-N Sulphur dioxide Chemical compound O=S=O RAHZWNYVWXNFOC-UHFFFAOYSA-N 0.000 claims description 4
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 230000000737 periodic effect Effects 0.000 claims description 4
- 150000004763 sulfides Chemical class 0.000 claims description 4
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 claims description 4
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000010348 incorporation Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 2
- 239000001569 carbon dioxide Substances 0.000 claims description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 238000000295 emission spectrum Methods 0.000 abstract 1
- CJDPJFRMHVXWPT-UHFFFAOYSA-N barium sulfide Chemical compound [S-2].[Ba+2] CJDPJFRMHVXWPT-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 8
- COOGPNLGKIHLSK-UHFFFAOYSA-N aluminium sulfide Chemical compound [Al+3].[Al+3].[S-2].[S-2].[S-2] COOGPNLGKIHLSK-UHFFFAOYSA-N 0.000 description 7
- 238000010894 electron beam technology Methods 0.000 description 7
- 229910015999 BaAl Inorganic materials 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 230000009849 deactivation Effects 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 230000009977 dual effect Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000037 hydrogen sulfide Inorganic materials 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910000765 intermetallic Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- GKQTUHKAQKWLIN-UHFFFAOYSA-L barium(2+);dihydroxide;hydrate Chemical compound O.[OH-].[OH-].[Ba+2] GKQTUHKAQKWLIN-UHFFFAOYSA-L 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000002144 chemical decomposition reaction Methods 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000000313 electron-beam-induced deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Luminescent Compositions (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US55271704P | 2004-03-15 | 2004-03-15 | |
| PCT/CA2005/000386 WO2005087971A1 (en) | 2004-03-15 | 2005-03-15 | Method for gettering oxygen and water during vacuum deposition of sulfide films |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007529623A true JP2007529623A (ja) | 2007-10-25 |
| JP2007529623A5 JP2007529623A5 (https=) | 2008-05-01 |
Family
ID=34975608
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007503159A Withdrawn JP2007529623A (ja) | 2004-03-15 | 2005-03-15 | 硫化物膜の真空堆積中における酸素及び水の除去(ゲッタリング)方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8057856B2 (https=) |
| JP (1) | JP2007529623A (https=) |
| CN (1) | CN1938448A (https=) |
| CA (1) | CA2554817A1 (https=) |
| TW (1) | TW200602505A (https=) |
| WO (1) | WO2005087971A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007526602A (ja) | 2004-03-04 | 2007-09-13 | アイファイアー・テクノロジー・コープ | チオアルミネート発光体に対する反応性金属供給源及び堆積方法 |
| CN100581309C (zh) * | 2004-04-27 | 2010-01-13 | 富士胶片株式会社 | 有机电致发光元件及其制造方法 |
| US20060269656A1 (en) * | 2005-05-26 | 2006-11-30 | Eastman Kodak Company | Reducing contamination in OLED processing systems |
| DE202009003677U1 (de) * | 2009-03-17 | 2010-04-29 | Porextherm-Dämmstoffe Gmbh | Indikator zum Nachweis des Eindringens von Luft- und/oder Feuchte in eine Vakuum-, Druck- oder Schutzgasverpackung |
| EP2360289A1 (de) * | 2010-02-23 | 2011-08-24 | Saint-Gobain Glass France | Vorrichtung und Verfahren zum Abscheiden einer aus mindestens zwei Komponenten bestehenden Schicht auf einem Gegenstand |
| HK1215127A2 (zh) * | 2015-06-17 | 2016-08-12 | Master Dynamic Limited | 制品涂层的设备、仪器和工艺 |
| US11519095B2 (en) * | 2019-04-22 | 2022-12-06 | Peng DU | MBE system with direct evaporation pump to cold panel |
| CN117535632A (zh) * | 2020-04-01 | 2024-02-09 | 佳能安内华股份有限公司 | 成膜设备、控制设备以及成膜方法 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL132102C (https=) | 1965-02-25 | 1900-01-01 | ||
| US4022939A (en) | 1975-12-18 | 1977-05-10 | Western Electric Company, Inc. | Synchronous shielding in vacuum deposition system |
| US4118542A (en) | 1977-01-17 | 1978-10-03 | Wall Colmonoy Corporation | Controlled atmosphere and vacuum processes |
| US5432015A (en) | 1992-05-08 | 1995-07-11 | Westaim Technologies, Inc. | Electroluminescent laminate with thick film dielectric |
| US5508586A (en) | 1993-06-17 | 1996-04-16 | Saes Getters S.P.A. | Integrated getter device suitable for flat displays |
| EP0656430B2 (en) | 1993-11-09 | 2000-01-12 | Galileo Vacuum Systems S.R.L. | Process and apparatus for the codeposition of metallic oxides on plastic films. |
| JPH07138739A (ja) * | 1993-11-11 | 1995-05-30 | Sony Corp | 真空蒸着装置 |
| BR9707403A (pt) | 1996-02-09 | 1999-04-06 | Getters Spa | Combinação de materiais para a partida em baixa temperatura da ativação de materiais absorventes metálicos e dispositivos absorventes metálicos que contêm os mesmos |
| US5976900A (en) | 1997-12-08 | 1999-11-02 | Cypress Semiconductor Corp. | Method of reducing impurity contamination in semiconductor process chambers |
| IT1297013B1 (it) | 1997-12-23 | 1999-08-03 | Getters Spa | Sistema getter per la purificazione dell'atmosfera di lavoro nei processi di deposizione fisica da vapore |
| US6077404A (en) | 1998-02-17 | 2000-06-20 | Applied Material, Inc. | Reflow chamber and process |
| US6241477B1 (en) * | 1999-08-25 | 2001-06-05 | Applied Materials, Inc. | In-situ getter in process cavity of processing chamber |
| US6586878B1 (en) | 1999-12-16 | 2003-07-01 | Koninklijke Philips Electronics N.V. | Metal halide lamp with improved getter orientation |
| US20020122895A1 (en) | 2000-09-14 | 2002-09-05 | Cheong Dan Daeweon | Magnesium barium thioaluminate and related phosphor materials |
| US6610352B2 (en) * | 2000-12-22 | 2003-08-26 | Ifire Technology, Inc. | Multiple source deposition process |
| US6447654B1 (en) | 2001-05-29 | 2002-09-10 | Ifire Technology Inc. | Single source sputtering of thioaluminate phosphor films |
| CN1561405A (zh) * | 2001-09-27 | 2005-01-05 | 纳幕尔杜邦公司 | 用于溅射淀积的双源单腔的方法和设备 |
| US6897474B2 (en) * | 2002-04-12 | 2005-05-24 | Universal Display Corporation | Protected organic electronic devices and methods for making the same |
| TW200420740A (en) * | 2003-01-30 | 2004-10-16 | Ifire Technology Inc | Controlled sulfur species deposition process |
-
2005
- 2005-03-10 US US11/077,343 patent/US8057856B2/en not_active Expired - Fee Related
- 2005-03-14 TW TW094107734A patent/TW200602505A/zh unknown
- 2005-03-15 WO PCT/CA2005/000386 patent/WO2005087971A1/en not_active Ceased
- 2005-03-15 JP JP2007503159A patent/JP2007529623A/ja not_active Withdrawn
- 2005-03-15 CA CA002554817A patent/CA2554817A1/en not_active Abandoned
- 2005-03-15 CN CNA200580008280XA patent/CN1938448A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20050227005A1 (en) | 2005-10-13 |
| CA2554817A1 (en) | 2005-09-22 |
| US8057856B2 (en) | 2011-11-15 |
| CN1938448A (zh) | 2007-03-28 |
| TW200602505A (en) | 2006-01-16 |
| WO2005087971A1 (en) | 2005-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6090434A (en) | Method for fabricating electroluminescent device | |
| JP2007529623A (ja) | 硫化物膜の真空堆積中における酸素及び水の除去(ゲッタリング)方法 | |
| JP4197204B2 (ja) | 酸化マグネシウムの作製装置 | |
| US7622149B2 (en) | Reactive metal sources and deposition method for thioaluminate phosphors | |
| JPH03281594A (ja) | 発光材料及び表示装置 | |
| CN100360637C (zh) | 受控的硫种类沉积方法 | |
| US7597969B2 (en) | Oxygen substituted barium thioaluminate phosphor materials | |
| KR20070018908A (ko) | 설파이드 필름을 진공 증착하는 동안 산소와 물을게터링하는 방법 | |
| JP2008214461A (ja) | 蛍光体膜及び蛍光体膜の製造方法 | |
| US7556721B2 (en) | Thiosilicate phosphor compositions and deposition methods using barium-silicon vacuum deposition sources for deposition of thiosilicate phosphor films | |
| CN1863938B (zh) | 用于硫化物薄膜沉积的聚硫化物热蒸汽源 | |
| JP2005523375A5 (https=) | ||
| US20050077478A1 (en) | Process for manufacturing radiation image storage panel | |
| JP4457972B2 (ja) | 硫化物焼結体ターゲットとその製造方法 | |
| JP2007109489A (ja) | 陽極、その製造方法及び蛍光ランプ | |
| JPH08203672A (ja) | 薄膜電場発光素子の製造方法および製造装置 | |
| JP2001297877A (ja) | 薄膜エレクトロルミネッセンス素子の製造方法および製造装置 | |
| JP2006265449A (ja) | 硫化物焼結体ターゲットとその製造方法 | |
| JP2006118009A (ja) | 薄膜の形成方法 | |
| JP2006219720A (ja) | 硫化物ターゲット及びその製造方法 | |
| JP2003201555A (ja) | 蛍光体シート製造装置 | |
| JP2007039542A (ja) | 陽極、その製造方法及び蛍光ランプ | |
| JPH0883684A (ja) | エレクトロルミネッセンス薄膜の製造方法および製造装置 | |
| JP2005206855A (ja) | 薄膜形成方法、これを用いたプラズマディスプレイパネルの製造方法、薄膜形成装置、プラズマディスプレイパネル | |
| JPH09241632A (ja) | 蛍光体の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080313 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080313 |
|
| A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20090114 |
|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20090810 |