JP2007520891A - ローカルsoiを備えた半導体装置を形成するための方法 - Google Patents
ローカルsoiを備えた半導体装置を形成するための方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims description 122
- 238000000034 method Methods 0.000 title claims description 30
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 44
- 239000001301 oxygen Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 239000013078 crystal Substances 0.000 claims abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract 2
- 239000000463 material Substances 0.000 claims description 27
- 239000000376 reactant Substances 0.000 claims description 3
- 239000012212 insulator Substances 0.000 abstract description 4
- 238000002955 isolation Methods 0.000 description 34
- 125000006850 spacer group Chemical group 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 10
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 9
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 125000004430 oxygen atom Chemical group O* 0.000 description 5
- AXQKVSDUCKWEKE-UHFFFAOYSA-N [C].[Ge].[Si] Chemical compound [C].[Ge].[Si] AXQKVSDUCKWEKE-UHFFFAOYSA-N 0.000 description 4
- HMDDXIMCDZRSNE-UHFFFAOYSA-N [C].[Si] Chemical compound [C].[Si] HMDDXIMCDZRSNE-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000003672 processing method Methods 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- HWEYZGSCHQNNEH-UHFFFAOYSA-N silicon tantalum Chemical compound [Si].[Ta] HWEYZGSCHQNNEH-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Abstract
Description
図面中の要素は簡略化及び明瞭化のために示されたものであり、必ずしも寸法化されていないことを当業者は理解する。例えば、本発明の実施形態をより良く理解するために、図面中の幾らかの要素の寸法はその他の要素と比較して誇張されている。
Claims (10)
- 頂部面を有する活性領域を備えた基板を提供する工程と、
酸素リッチ型半導体材料層からなる第一の層を、前記頂部面上に形成する工程と、
前記第一の層に、半導体材料層からなる第二の層をエピタキシャル成長させる工程と、
前記第一の層を半導体酸化物の層に変換する工程と、
からなる方法。 - トランジスタのチャネルのために前記第二の層を用いてトランジスタを形成する工程を更に含む請求項1に記載の方法。
- 前記酸素リッチ型半導体材料層は酸素が豊富なシリコンを含む請求項1に記載の方法。
- 前記第二の層は単結晶シリコンからなる請求項1に記載の方法。
- 頂部面を有する活性領域を備えた基板を提供する工程と、
酸素リッチ型シリコン層を前記頂部面上に形成する工程と、
前記酸素リッチ型シリコン層上に単結晶シリコン層をエピタキシャル成長させる工程と、
前記酸素リッチ型シリコン層をシリコン酸化物に変換する工程と、
からなる方法。 - 前記変換工程は、前記単結晶シリコン層の上に高温水蒸気を導入する工程を含む請求項6に記載の方法。
- 前記変換工程は、前記第二の層の頂部面に酸化物層を形成する工程を更に含む請求項6に記載の方法。
- 前記第二の層の頂部面にある酸化物層の少なくとも一部を除去する工程と、
前記第二の層にゲート誘電体を形成する工程と、
をさらに含む請求項7に記載の方法。 - 基板を提供する工程と、
前記基板の上に単結晶格子を有する第一の層であって半導体タイプの第一の材料と第二の材料とを含む第一の層を形成する工程と、
半導体タイプの第三の材料からなる第二の層を前記第一の層に直接エピタキシャル成長させる工程と、
前記第二の層をエピタキシャル成長させた後に、前記第一の層を絶縁層に変換させながら、反応物質を前記第二の層に直接適用することにより、該第二の層の少なくとも一部を半導体タイプのものとして維持する工程と、
からなり、
前記第二の材料は半導体タイプとは異なる第一のタイプであるとともに前記単結晶格子内の位置を占有している、方法。 - 前記第二の材料は前記第一の層の約3%未満である請求項9に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/771,855 US7045432B2 (en) | 2004-02-04 | 2004-02-04 | Method for forming a semiconductor device with local semiconductor-on-insulator (SOI) |
PCT/US2005/001534 WO2005076795A2 (en) | 2004-02-04 | 2005-01-12 | Method for forming a semiconductor device with local semiconductor-on- insulator (soi) |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007520891A true JP2007520891A (ja) | 2007-07-26 |
JP2007520891A5 JP2007520891A5 (ja) | 2008-02-14 |
Family
ID=34808535
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006552133A Pending JP2007520891A (ja) | 2004-02-04 | 2005-01-12 | ローカルsoiを備えた半導体装置を形成するための方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7045432B2 (ja) |
JP (1) | JP2007520891A (ja) |
KR (1) | KR20060130166A (ja) |
CN (1) | CN1914718A (ja) |
WO (1) | WO2005076795A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008263025A (ja) * | 2007-04-11 | 2008-10-30 | Shin Etsu Handotai Co Ltd | 半導体基板の製造方法 |
JP2012253381A (ja) * | 2012-08-22 | 2012-12-20 | Renesas Electronics Corp | 半導体装置 |
Families Citing this family (29)
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EP1649501B1 (en) * | 2003-07-30 | 2007-01-03 | Infineon Technologies AG | High-k dielectric film, method of forming the same and related semiconductor device |
US7132338B2 (en) * | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
US7166528B2 (en) | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
US7078302B2 (en) * | 2004-02-23 | 2006-07-18 | Applied Materials, Inc. | Gate electrode dopant activation method for semiconductor manufacturing including a laser anneal |
JP4434832B2 (ja) * | 2004-05-20 | 2010-03-17 | Okiセミコンダクタ株式会社 | 半導体装置、及びその製造方法 |
US7115955B2 (en) * | 2004-07-30 | 2006-10-03 | International Business Machines Corporation | Semiconductor device having a strained raised source/drain |
US7253493B2 (en) * | 2004-08-24 | 2007-08-07 | Micron Technology, Inc. | High density access transistor having increased channel width and methods of fabricating such devices |
US7226833B2 (en) * | 2004-10-29 | 2007-06-05 | Freescale Semiconductor, Inc. | Semiconductor device structure and method therefor |
US7682940B2 (en) | 2004-12-01 | 2010-03-23 | Applied Materials, Inc. | Use of Cl2 and/or HCl during silicon epitaxial film formation |
US7312128B2 (en) * | 2004-12-01 | 2007-12-25 | Applied Materials, Inc. | Selective epitaxy process with alternating gas supply |
US7560352B2 (en) * | 2004-12-01 | 2009-07-14 | Applied Materials, Inc. | Selective deposition |
US7282425B2 (en) * | 2005-01-31 | 2007-10-16 | International Business Machines Corporation | Structure and method of integrating compound and elemental semiconductors for high-performance CMOS |
US7648927B2 (en) | 2005-06-21 | 2010-01-19 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US20060286774A1 (en) * | 2005-06-21 | 2006-12-21 | Applied Materials. Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
US7651955B2 (en) * | 2005-06-21 | 2010-01-26 | Applied Materials, Inc. | Method for forming silicon-containing materials during a photoexcitation deposition process |
TW200713455A (en) * | 2005-09-20 | 2007-04-01 | Applied Materials Inc | Method to form a device on a SOI substrate |
KR100713924B1 (ko) * | 2005-12-23 | 2007-05-07 | 주식회사 하이닉스반도체 | 돌기형 트랜지스터 및 그의 형성방법 |
US7674337B2 (en) * | 2006-04-07 | 2010-03-09 | Applied Materials, Inc. | Gas manifolds for use during epitaxial film formation |
KR100764360B1 (ko) * | 2006-04-28 | 2007-10-08 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
TWI379347B (en) | 2006-07-31 | 2012-12-11 | Applied Materials Inc | Methods of forming carbon-containing silicon epitaxial layers |
JP5175285B2 (ja) * | 2006-07-31 | 2013-04-03 | アプライド マテリアルズ インコーポレイテッド | エピタキシャル層形成中の形態制御方法 |
KR100764059B1 (ko) * | 2006-09-22 | 2007-10-09 | 삼성전자주식회사 | 반도체 장치 및 그 형성 방법 |
US8334220B2 (en) * | 2007-03-21 | 2012-12-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of selectively forming a silicon nitride layer |
US7906381B2 (en) * | 2007-07-05 | 2011-03-15 | Stmicroelectronics S.A. | Method for integrating silicon-on-nothing devices with standard CMOS devices |
US7659158B2 (en) | 2008-03-31 | 2010-02-09 | Applied Materials, Inc. | Atomic layer deposition processes for non-volatile memory devices |
KR101561059B1 (ko) * | 2008-11-20 | 2015-10-16 | 삼성전자주식회사 | 반도체 소자 및 그 제조 방법 |
US8999798B2 (en) * | 2009-12-17 | 2015-04-07 | Applied Materials, Inc. | Methods for forming NMOS EPI layers |
US8957478B2 (en) * | 2013-06-24 | 2015-02-17 | International Business Machines Corporation | Semiconductor device including source/drain formed on bulk and gate channel formed on oxide layer |
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2004
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- 2005-01-12 CN CNA2005800040474A patent/CN1914718A/zh active Pending
- 2005-01-12 KR KR1020067015698A patent/KR20060130166A/ko not_active Application Discontinuation
- 2005-01-12 WO PCT/US2005/001534 patent/WO2005076795A2/en active Application Filing
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WO2005076795A2 (en) | 2005-08-25 |
WO2005076795A3 (en) | 2005-12-22 |
CN1914718A (zh) | 2007-02-14 |
US7045432B2 (en) | 2006-05-16 |
US20050170604A1 (en) | 2005-08-04 |
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