JP2007520073A5 - - Google Patents

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Publication number
JP2007520073A5
JP2007520073A5 JP2006550157A JP2006550157A JP2007520073A5 JP 2007520073 A5 JP2007520073 A5 JP 2007520073A5 JP 2006550157 A JP2006550157 A JP 2006550157A JP 2006550157 A JP2006550157 A JP 2006550157A JP 2007520073 A5 JP2007520073 A5 JP 2007520073A5
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JP
Japan
Prior art keywords
spacer
semiconductor
nanotube
catalyst pad
gap
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JP2006550157A
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English (en)
Japanese (ja)
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JP4521409B2 (ja
JP2007520073A (ja
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Priority claimed from US10/767,039 external-priority patent/US7211844B2/en
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Publication of JP2007520073A publication Critical patent/JP2007520073A/ja
Publication of JP2007520073A5 publication Critical patent/JP2007520073A5/ja
Application granted granted Critical
Publication of JP4521409B2 publication Critical patent/JP4521409B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006550157A 2004-01-29 2005-01-13 垂直型半導体デバイス構造体、およびその形成方法 Expired - Fee Related JP4521409B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/767,039 US7211844B2 (en) 2004-01-29 2004-01-29 Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
PCT/EP2005/050128 WO2005076382A1 (en) 2004-01-29 2005-01-13 Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage

Publications (3)

Publication Number Publication Date
JP2007520073A JP2007520073A (ja) 2007-07-19
JP2007520073A5 true JP2007520073A5 (https=) 2010-03-25
JP4521409B2 JP4521409B2 (ja) 2010-08-11

Family

ID=34807627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006550157A Expired - Fee Related JP4521409B2 (ja) 2004-01-29 2005-01-13 垂直型半導体デバイス構造体、およびその形成方法

Country Status (11)

Country Link
US (2) US7211844B2 (https=)
EP (1) EP1709700B1 (https=)
JP (1) JP4521409B2 (https=)
KR (1) KR100974162B1 (https=)
CN (1) CN100568573C (https=)
AT (1) ATE389242T1 (https=)
DE (1) DE602005005302T2 (https=)
IL (1) IL177126A (https=)
RU (1) RU2338683C2 (https=)
TW (1) TWI335669B (https=)
WO (1) WO2005076382A1 (https=)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7374793B2 (en) * 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
US7038299B2 (en) 2003-12-11 2006-05-02 International Business Machines Corporation Selective synthesis of semiconducting carbon nanotubes
US20050167655A1 (en) * 2004-01-29 2005-08-04 International Business Machines Corporation Vertical nanotube semiconductor device structures and methods of forming the same
US7211844B2 (en) 2004-01-29 2007-05-01 International Business Machines Corporation Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
US7829883B2 (en) * 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
US8075863B2 (en) * 2004-05-26 2011-12-13 Massachusetts Institute Of Technology Methods and devices for growth and/or assembly of nanostructures
US7109546B2 (en) 2004-06-29 2006-09-19 International Business Machines Corporation Horizontal memory gain cells
US7233071B2 (en) 2004-10-04 2007-06-19 International Business Machines Corporation Low-k dielectric layer based upon carbon nanostructures
US7268077B2 (en) * 2005-12-02 2007-09-11 Intel Corporation Carbon nanotube reinforced metallic layer
US7713858B2 (en) * 2006-03-31 2010-05-11 Intel Corporation Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same
US8785058B2 (en) * 2006-04-07 2014-07-22 New Jersey Institute Of Technology Integrated biofuel cell with aligned nanotube electrodes and method of use thereof
EP2074660A1 (en) * 2006-09-04 2009-07-01 Nxp B.V. Control of carbon nanostructure growth in an interconnect structure
US8546027B2 (en) * 2007-06-20 2013-10-01 New Jersey Institute Of Technology System and method for directed self-assembly technique for the creation of carbon nanotube sensors and bio-fuel cells on single plane
US7736979B2 (en) * 2007-06-20 2010-06-15 New Jersey Institute Of Technology Method of forming nanotube vertical field effect transistor
US7964143B2 (en) 2007-06-20 2011-06-21 New Jersey Institute Of Technology Nanotube device and method of fabrication
KR100927634B1 (ko) * 2007-09-07 2009-11-20 한국표준과학연구원 멀티 게이트 나노튜브 소자의 제조 방법 및 그 소자
US7892956B2 (en) * 2007-09-24 2011-02-22 International Business Machines Corporation Methods of manufacture of vertical nanowire FET devices
US8624224B2 (en) 2008-01-24 2014-01-07 Nano-Electronic And Photonic Devices And Circuits, Llc Nanotube array bipolar transistors
CN101905877B (zh) * 2009-06-02 2013-01-09 清华大学 碳纳米管膜的制备方法
CN101993055B (zh) * 2009-08-14 2013-02-13 清华大学 碳纳米管膜先驱、碳纳米管膜及其制备方法
TWI417238B (zh) * 2009-08-25 2013-12-01 Hon Hai Prec Ind Co Ltd 奈米碳管膜先驅、奈米碳管膜及其製備方法
US8350360B1 (en) 2009-08-28 2013-01-08 Lockheed Martin Corporation Four-terminal carbon nanotube capacitors
US8405189B1 (en) * 2010-02-08 2013-03-26 Lockheed Martin Corporation Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors
KR101927415B1 (ko) 2012-11-05 2019-03-07 삼성전자주식회사 나노갭 소자 및 이로부터의 신호를 처리하는 방법
US10654718B2 (en) * 2013-09-20 2020-05-19 Nantero, Inc. Scalable nanotube fabrics and methods for making same
EP3053185A4 (en) * 2013-10-03 2017-05-17 Intel Corporation Internal spacers for nanowire transistors and method of fabrication thereof
RU2601044C2 (ru) * 2015-02-04 2016-10-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Тамбовский государственный технический университет" ФГБОУ ВПО ТГТУ Способ формирования углеродных нанообъектов на ситалловых подложках
US9899529B2 (en) 2015-11-09 2018-02-20 Samsung Electronics Co., Ltd. Method to make self-aligned vertical field effect transistor
TWI680535B (zh) 2016-06-14 2019-12-21 美商應用材料股份有限公司 金屬及含金屬化合物之氧化體積膨脹
TWI719262B (zh) 2016-11-03 2021-02-21 美商應用材料股份有限公司 用於圖案化之薄膜的沉積與處理
WO2018089351A1 (en) * 2016-11-08 2018-05-17 Applied Materials, Inc. Geometric control of bottom-up pillars for patterning applications
TW201839897A (zh) 2017-02-22 2018-11-01 美商應用材料股份有限公司 自對準接觸圖案化之臨界尺寸控制
WO2018200212A1 (en) 2017-04-25 2018-11-01 Applied Materials, Inc. Selective deposition of tungsten for simplified process flow of tungsten oxide pillar formation
US10840186B2 (en) 2017-06-10 2020-11-17 Applied Materials, Inc. Methods of forming self-aligned vias and air gaps
TW201906035A (zh) 2017-06-24 2019-02-01 美商微材料有限責任公司 生產完全自我對準的介層窗及觸點之方法
TWI760540B (zh) * 2017-08-13 2022-04-11 美商應用材料股份有限公司 自對準高深寬比結構及製作方法
WO2019046402A1 (en) 2017-08-31 2019-03-07 Micromaterials Llc METHODS FOR GENERATING SELF-ALIGNED INTERCONNECTION HOLES
WO2019046399A1 (en) 2017-08-31 2019-03-07 Micromaterials Llc METHODS FOR PRODUCING SELF-ALIGNED INTERCONNECTION HOLES
US10600688B2 (en) 2017-09-06 2020-03-24 Micromaterials Llc Methods of producing self-aligned vias
CN110034017A (zh) 2017-12-07 2019-07-19 微材料有限责任公司 用于使金属和阻挡层-衬垫可控凹陷的方法
EP3499557A1 (en) 2017-12-15 2019-06-19 Micromaterials LLC Selectively etched self-aligned via processes
TW201939628A (zh) 2018-03-02 2019-10-01 美商微材料有限責任公司 移除金屬氧化物的方法
US10790191B2 (en) 2018-05-08 2020-09-29 Micromaterials Llc Selective removal process to create high aspect ratio fully self-aligned via
TW202011547A (zh) 2018-05-16 2020-03-16 美商微材料有限責任公司 用於產生完全自對準的通孔的方法
WO2019236350A1 (en) 2018-06-08 2019-12-12 Micromaterials Llc A method for creating a fully self-aligned via
CN108807170B (zh) * 2018-06-11 2021-10-22 中国科学院微电子研究所 一种纳米线的制作方法
US11164938B2 (en) 2019-03-26 2021-11-02 Micromaterials Llc DRAM capacitor module
US20240421187A1 (en) * 2023-06-16 2024-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Device having mg contacts coupled by mp contact and method of manufacturing same

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796573A (en) * 1997-05-29 1998-08-18 International Business Machines Corporation Overhanging separator for self-defining stacked capacitor
US6250984B1 (en) * 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
RU2173003C2 (ru) * 1999-11-25 2001-08-27 Септре Электроникс Лимитед Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств
JP3658342B2 (ja) * 2000-05-30 2005-06-08 キヤノン株式会社 電子放出素子、電子源及び画像形成装置、並びにテレビジョン放送表示装置
KR100360476B1 (ko) * 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법
DE10036897C1 (de) * 2000-07-28 2002-01-03 Infineon Technologies Ag Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors
DE60131036T2 (de) 2000-11-01 2008-02-14 Japan Science And Technology Agency, Kawaguchi Ein NOT-Schaltkreis
US6423583B1 (en) * 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
US7084507B2 (en) * 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
EP1468423A2 (en) 2002-01-18 2004-10-20 California Institute Of Technology Array-based architecture for molecular electronics
JP5165828B2 (ja) 2002-02-09 2013-03-21 三星電子株式会社 炭素ナノチューブを用いるメモリ素子及びその製造方法
US6515325B1 (en) * 2002-03-06 2003-02-04 Micron Technology, Inc. Nanotube semiconductor devices and methods for making the same
US6891227B2 (en) * 2002-03-20 2005-05-10 International Business Machines Corporation Self-aligned nanotube field effect transistor and method of fabricating same
US20030211724A1 (en) 2002-05-10 2003-11-13 Texas Instruments Incorporated Providing electrical conductivity between an active region and a conductive layer in a semiconductor device using carbon nanotubes
DE10250984A1 (de) 2002-10-29 2004-05-19 Hahn-Meitner-Institut Berlin Gmbh Feldeffekttransistor sowie Verfahren zu seiner Herstellung
DE10250830B4 (de) 2002-10-31 2015-02-26 Qimonda Ag Verfahren zum Herstellung eines Schaltkreis-Arrays
KR100790859B1 (ko) 2002-11-15 2008-01-03 삼성전자주식회사 수직 나노튜브를 이용한 비휘발성 메모리 소자
KR100493166B1 (ko) 2002-12-30 2005-06-02 삼성전자주식회사 수직나노튜브를 이용한 메모리
US6933222B2 (en) * 2003-01-02 2005-08-23 Intel Corporation Microcircuit fabrication and interconnection
WO2004105140A1 (ja) 2003-05-22 2004-12-02 Fujitsu Limited 電界効果トランジスタ及びその製造方法
US7038299B2 (en) 2003-12-11 2006-05-02 International Business Machines Corporation Selective synthesis of semiconducting carbon nanotubes
US7374793B2 (en) 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
US7211844B2 (en) 2004-01-29 2007-05-01 International Business Machines Corporation Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
US20050167655A1 (en) 2004-01-29 2005-08-04 International Business Machines Corporation Vertical nanotube semiconductor device structures and methods of forming the same
US7829883B2 (en) 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays

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