JP2007520072A5 - - Google Patents
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- Publication number
- JP2007520072A5 JP2007520072A5 JP2006550156A JP2006550156A JP2007520072A5 JP 2007520072 A5 JP2007520072 A5 JP 2007520072A5 JP 2006550156 A JP2006550156 A JP 2006550156A JP 2006550156 A JP2006550156 A JP 2006550156A JP 2007520072 A5 JP2007520072 A5 JP 2007520072A5
- Authority
- JP
- Japan
- Prior art keywords
- nanotube
- semiconductor
- gate electrode
- plate
- conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 43
- 239000002071 nanotube Substances 0.000 claims 41
- 238000000034 method Methods 0.000 claims 19
- 239000000758 substrate Substances 0.000 claims 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 4
- 239000002041 carbon nanotube Substances 0.000 claims 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims 4
- 125000004432 carbon atom Chemical group C* 0.000 claims 3
- 230000005669 field effect Effects 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 230000003197 catalytic effect Effects 0.000 claims 2
- 239000003054 catalyst Substances 0.000 claims 1
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 239000000376 reactant Substances 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/767,065 US20050167655A1 (en) | 2004-01-29 | 2004-01-29 | Vertical nanotube semiconductor device structures and methods of forming the same |
| PCT/EP2005/050127 WO2005076381A1 (en) | 2004-01-29 | 2005-01-13 | Vertical nanotube semiconducteur device structures and methods of forming the same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011172859A Division JP5511746B2 (ja) | 2004-01-29 | 2011-08-08 | 垂直型ナノチューブ半導体デバイス構造体の形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007520072A JP2007520072A (ja) | 2007-07-19 |
| JP2007520072A5 true JP2007520072A5 (https=) | 2007-11-29 |
Family
ID=34807634
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006550156A Pending JP2007520072A (ja) | 2004-01-29 | 2005-01-13 | 垂直型ナノチューブ半導体デバイス構造体及びその形成方法 |
| JP2011172859A Expired - Fee Related JP5511746B2 (ja) | 2004-01-29 | 2011-08-08 | 垂直型ナノチューブ半導体デバイス構造体の形成方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011172859A Expired - Fee Related JP5511746B2 (ja) | 2004-01-29 | 2011-08-08 | 垂直型ナノチューブ半導体デバイス構造体の形成方法 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20050167655A1 (https=) |
| EP (1) | EP1708960A1 (https=) |
| JP (2) | JP2007520072A (https=) |
| KR (1) | KR20060127105A (https=) |
| CN (1) | CN100580971C (https=) |
| IL (1) | IL177125A0 (https=) |
| RU (1) | RU2342315C2 (https=) |
| TW (1) | TWI343123B (https=) |
| WO (1) | WO2005076381A1 (https=) |
Families Citing this family (62)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7454295B2 (en) | 1998-12-17 | 2008-11-18 | The Watereye Corporation | Anti-terrorism water quality monitoring system |
| US9056783B2 (en) * | 1998-12-17 | 2015-06-16 | Hach Company | System for monitoring discharges into a waste water collection system |
| US8958917B2 (en) * | 1998-12-17 | 2015-02-17 | Hach Company | Method and system for remote monitoring of fluid quality and treatment |
| US20110125412A1 (en) * | 1998-12-17 | 2011-05-26 | Hach Company | Remote monitoring of carbon nanotube sensor |
| US8920619B2 (en) | 2003-03-19 | 2014-12-30 | Hach Company | Carbon nanotube sensor |
| US7374793B2 (en) * | 2003-12-11 | 2008-05-20 | International Business Machines Corporation | Methods and structures for promoting stable synthesis of carbon nanotubes |
| US7038299B2 (en) | 2003-12-11 | 2006-05-02 | International Business Machines Corporation | Selective synthesis of semiconducting carbon nanotubes |
| US7211844B2 (en) | 2004-01-29 | 2007-05-01 | International Business Machines Corporation | Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage |
| US7829883B2 (en) | 2004-02-12 | 2010-11-09 | International Business Machines Corporation | Vertical carbon nanotube field effect transistors and arrays |
| US20050279274A1 (en) * | 2004-04-30 | 2005-12-22 | Chunming Niu | Systems and methods for nanowire growth and manufacturing |
| US7109546B2 (en) | 2004-06-29 | 2006-09-19 | International Business Machines Corporation | Horizontal memory gain cells |
| US7351448B1 (en) * | 2004-07-27 | 2008-04-01 | The United States Of America As Represented By The Secretary Of The Navy | Anti-reflective coating on patterned metals or metallic surfaces |
| US7233071B2 (en) | 2004-10-04 | 2007-06-19 | International Business Machines Corporation | Low-k dielectric layer based upon carbon nanostructures |
| US7126207B2 (en) * | 2005-03-24 | 2006-10-24 | Intel Corporation | Capacitor with carbon nanotubes |
| KR100645064B1 (ko) * | 2005-05-23 | 2006-11-10 | 삼성전자주식회사 | 금속 산화물 저항 기억소자 및 그 제조방법 |
| US7230286B2 (en) * | 2005-05-23 | 2007-06-12 | International Business Machines Corporation | Vertical FET with nanowire channels and a silicided bottom contact |
| WO2007022359A2 (en) * | 2005-08-16 | 2007-02-22 | The Regents Of The University Of California | Vertical integrated silicon nanowire field effect transistors and methods of fabrication |
| WO2007047523A2 (en) * | 2005-10-14 | 2007-04-26 | Pennsylvania State University | System and method for positioning and synthesizing of nanostructures |
| US7268077B2 (en) * | 2005-12-02 | 2007-09-11 | Intel Corporation | Carbon nanotube reinforced metallic layer |
| US7906803B2 (en) * | 2005-12-06 | 2011-03-15 | Canon Kabushiki Kaisha | Nano-wire capacitor and circuit device therewith |
| US8394664B2 (en) * | 2006-02-02 | 2013-03-12 | William Marsh Rice University | Electrical device fabrication from nanotube formations |
| WO2007092835A2 (en) * | 2006-02-07 | 2007-08-16 | William Marsh Rice University | Production de reseaux verticaux de nanotubes de carbone a petit diametre et paroi simple |
| US8679630B2 (en) * | 2006-05-17 | 2014-03-25 | Purdue Research Foundation | Vertical carbon nanotube device in nanoporous templates |
| US8114774B2 (en) | 2006-06-19 | 2012-02-14 | Nxp B.V. | Semiconductor device, and semiconductor device obtained by such a method |
| KR100771546B1 (ko) * | 2006-06-29 | 2007-10-31 | 주식회사 하이닉스반도체 | 메모리 소자의 커패시터 및 형성 방법 |
| JP2009541198A (ja) * | 2006-06-30 | 2009-11-26 | ユニバーシティー オブ ウロンゴング | ナノ構造複合材 |
| JP2008091566A (ja) * | 2006-09-29 | 2008-04-17 | Fujitsu Ltd | 絶縁膜で被覆されたカーボンナノチューブ構造体の製造方法及びその構造体からなる電界効果トランジスタ装置 |
| KR100820174B1 (ko) * | 2006-12-05 | 2008-04-08 | 한국전자통신연구원 | 수직구조의 탄소나노튜브를 이용한 전자소자 및 그제조방법 |
| WO2008069485A1 (en) * | 2006-12-05 | 2008-06-12 | Electronics And Telecommunications Research Institute | The electronic devices using carbon nanotubes having vertical structure and the manufacturing method thereof |
| US20100173228A1 (en) * | 2006-12-14 | 2010-07-08 | University Of Wollongong | Nanotube and Carbon Layer Nanostructured Composites |
| US9806273B2 (en) * | 2007-01-03 | 2017-10-31 | The United States Of America As Represented By The Secretary Of The Army | Field effect transistor array using single wall carbon nano-tubes |
| DE102007001130B4 (de) * | 2007-01-04 | 2014-07-03 | Qimonda Ag | Verfahren zum Herstellen einer Durchkontaktierung in einer Schicht und Anordnung mit einer Schicht mit Durchkontaktierung |
| JP5181512B2 (ja) | 2007-03-30 | 2013-04-10 | 富士通セミコンダクター株式会社 | 電子デバイスの製造方法 |
| US7736979B2 (en) * | 2007-06-20 | 2010-06-15 | New Jersey Institute Of Technology | Method of forming nanotube vertical field effect transistor |
| US7964143B2 (en) | 2007-06-20 | 2011-06-21 | New Jersey Institute Of Technology | Nanotube device and method of fabrication |
| US8546027B2 (en) * | 2007-06-20 | 2013-10-01 | New Jersey Institute Of Technology | System and method for directed self-assembly technique for the creation of carbon nanotube sensors and bio-fuel cells on single plane |
| US7892956B2 (en) * | 2007-09-24 | 2011-02-22 | International Business Machines Corporation | Methods of manufacture of vertical nanowire FET devices |
| US8624224B2 (en) * | 2008-01-24 | 2014-01-07 | Nano-Electronic And Photonic Devices And Circuits, Llc | Nanotube array bipolar transistors |
| FR2928093B1 (fr) * | 2008-02-28 | 2010-12-31 | Commissariat Energie Atomique | Dispositif de separation de molecules et procede de fabrication. |
| US8143143B2 (en) | 2008-04-14 | 2012-03-27 | Bandgap Engineering Inc. | Process for fabricating nanowire arrays |
| WO2009151397A1 (en) * | 2008-06-13 | 2009-12-17 | Qunano Ab | Nanostructured mos capacitor |
| SE533531C2 (sv) * | 2008-12-19 | 2010-10-19 | Glo Ab | Nanostrukturerad anordning |
| US8715981B2 (en) * | 2009-01-27 | 2014-05-06 | Purdue Research Foundation | Electrochemical biosensor |
| US8148264B2 (en) | 2009-02-25 | 2012-04-03 | California Institue Of Technology | Methods for fabrication of high aspect ratio micropillars and nanopillars |
| US8237150B2 (en) * | 2009-04-03 | 2012-08-07 | International Business Machines Corporation | Nanowire devices for enhancing mobility through stress engineering |
| US8872154B2 (en) * | 2009-04-06 | 2014-10-28 | Purdue Research Foundation | Field effect transistor fabrication from carbon nanotubes |
| US10096817B2 (en) | 2009-05-07 | 2018-10-09 | Amprius, Inc. | Template electrode structures with enhanced adhesion characteristics |
| US8080468B2 (en) | 2009-06-26 | 2011-12-20 | California Institute Of Technology | Methods for fabricating passivated silicon nanowires and devices thus obtained |
| WO2011060017A2 (en) | 2009-11-11 | 2011-05-19 | Amprius, Inc | Intermediate layers for electrode fabrication |
| US8809093B2 (en) | 2009-11-19 | 2014-08-19 | California Institute Of Technology | Methods for fabricating self-aligning semicondutor heterostructures using silicon nanowires |
| US9018684B2 (en) | 2009-11-23 | 2015-04-28 | California Institute Of Technology | Chemical sensing and/or measuring devices and methods |
| TWI476948B (zh) * | 2011-01-27 | 2015-03-11 | Hon Hai Prec Ind Co Ltd | 外延結構及其製備方法 |
| WO2013043730A2 (en) * | 2011-09-19 | 2013-03-28 | Bandgap Engineering, Inc. | Electrical contacts to nanostructured areas |
| WO2013156085A1 (en) * | 2012-04-20 | 2013-10-24 | Hewlett-Packard Development Company, L.P. | Method of manufacturing a semiconductor device |
| GB201207766D0 (en) * | 2012-05-03 | 2012-06-13 | Dyson Technology Ltd | Dielectric capacitor |
| US9142400B1 (en) | 2012-07-17 | 2015-09-22 | Stc.Unm | Method of making a heteroepitaxial layer on a seed area |
| EP2909865B1 (en) | 2012-10-19 | 2020-08-19 | Georgia Tech Research Corporation | Multilayer coatings formed on aligned arrays of carbon nanotubes |
| US9064942B2 (en) | 2013-01-28 | 2015-06-23 | International Business Machines Corporation | Nanowire capacitor for bidirectional operation |
| DE102014107167B4 (de) * | 2014-05-21 | 2022-04-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Halbleiterbauelements mit einer Strukturschicht mit einer Mehrzahl von dreidimensionalen Strukturelementen und strahlungsemittierendes Halbleiterbauelement mit einer Strukturschicht mit einer Mehrzahl von dreidimensionalen Strukturelementen |
| WO2018125108A1 (en) * | 2016-12-29 | 2018-07-05 | Intel Corporation | Using nanotubes as a guide for selective deposition in manufacturing integrated circuit components |
| CN114600209B (zh) | 2019-10-24 | 2024-07-23 | 株式会社村田制作所 | 复合电容器 |
| KR102846966B1 (ko) * | 2021-06-28 | 2025-08-20 | 서울대학교산학협력단 | 나노튜브 반도체 소자 및 이를 포함하는 전단력 센서 |
Family Cites Families (37)
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|---|---|---|---|---|
| KR100365444B1 (ko) * | 1996-09-18 | 2004-01-24 | 가부시끼가이샤 도시바 | 진공마이크로장치와이를이용한화상표시장치 |
| US5796573A (en) * | 1997-05-29 | 1998-08-18 | International Business Machines Corporation | Overhanging separator for self-defining stacked capacitor |
| JP4078721B2 (ja) * | 1998-08-24 | 2008-04-23 | ソニー株式会社 | 半導体装置とその製造方法 |
| JP2000101037A (ja) * | 1998-09-17 | 2000-04-07 | Matsushita Electronics Industry Corp | 半導体装置及びその製造方法 |
| US6250984B1 (en) * | 1999-01-25 | 2001-06-26 | Agere Systems Guardian Corp. | Article comprising enhanced nanotube emitter structure and process for fabricating article |
| US6322713B1 (en) * | 1999-07-15 | 2001-11-27 | Agere Systems Guardian Corp. | Nanoscale conductive connectors and method for making same |
| US6286226B1 (en) * | 1999-09-24 | 2001-09-11 | Agere Systems Guardian Corp. | Tactile sensor comprising nanowires and method for making the same |
| RU2173003C2 (ru) * | 1999-11-25 | 2001-08-27 | Септре Электроникс Лимитед | Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств |
| KR100360476B1 (ko) * | 2000-06-27 | 2002-11-08 | 삼성전자 주식회사 | 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법 |
| DE10036897C1 (de) * | 2000-07-28 | 2002-01-03 | Infineon Technologies Ag | Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors |
| JP2002141633A (ja) * | 2000-10-25 | 2002-05-17 | Lucent Technol Inc | 垂直にナノ相互接続された回路デバイスからなる製品及びその製造方法 |
| DE60131036T2 (de) | 2000-11-01 | 2008-02-14 | Japan Science And Technology Agency, Kawaguchi | Ein NOT-Schaltkreis |
| US6423583B1 (en) * | 2001-01-03 | 2002-07-23 | International Business Machines Corporation | Methodology for electrically induced selective breakdown of nanotubes |
| US6448701B1 (en) * | 2001-03-09 | 2002-09-10 | The United States Of America As Represented By The Secretary Of The Navy | Self-aligned integrally gated nanofilament field emitter cell and array |
| US7084507B2 (en) * | 2001-05-02 | 2006-08-01 | Fujitsu Limited | Integrated circuit device and method of producing the same |
| JP4225716B2 (ja) * | 2001-09-11 | 2009-02-18 | 富士通株式会社 | 円筒状多層構造体による半導体装置 |
| US6599808B2 (en) * | 2001-09-12 | 2003-07-29 | Intel Corporation | Method and device for on-chip decoupling capacitor using nanostructures as bottom electrode |
| DE10161312A1 (de) * | 2001-12-13 | 2003-07-10 | Infineon Technologies Ag | Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung |
| EP1468423A2 (en) | 2002-01-18 | 2004-10-20 | California Institute Of Technology | Array-based architecture for molecular electronics |
| JP2003234254A (ja) * | 2002-02-07 | 2003-08-22 | Hitachi Zosen Corp | カーボンナノチューブを用いた電気二重層キャパシタ |
| JP5165828B2 (ja) * | 2002-02-09 | 2013-03-21 | 三星電子株式会社 | 炭素ナノチューブを用いるメモリ素子及びその製造方法 |
| JP2003258336A (ja) * | 2002-02-28 | 2003-09-12 | Japan Science & Technology Corp | 分子デバイス及びその製造方法 |
| US6515325B1 (en) * | 2002-03-06 | 2003-02-04 | Micron Technology, Inc. | Nanotube semiconductor devices and methods for making the same |
| JP4120918B2 (ja) * | 2002-03-18 | 2008-07-16 | 富士通株式会社 | 柱状カーボン構造物の選択成長方法及び電子デバイス |
| US6891227B2 (en) * | 2002-03-20 | 2005-05-10 | International Business Machines Corporation | Self-aligned nanotube field effect transistor and method of fabricating same |
| US20030211724A1 (en) * | 2002-05-10 | 2003-11-13 | Texas Instruments Incorporated | Providing electrical conductivity between an active region and a conductive layer in a semiconductor device using carbon nanotubes |
| DE10250984A1 (de) | 2002-10-29 | 2004-05-19 | Hahn-Meitner-Institut Berlin Gmbh | Feldeffekttransistor sowie Verfahren zu seiner Herstellung |
| DE10250829B4 (de) * | 2002-10-31 | 2006-11-02 | Infineon Technologies Ag | Nichtflüchtige Speicherzelle, Speicherzellen-Anordnung und Verfahren zum Herstellen einer nichtflüchtigen Speicherzelle |
| DE10250830B4 (de) | 2002-10-31 | 2015-02-26 | Qimonda Ag | Verfahren zum Herstellung eines Schaltkreis-Arrays |
| KR100790859B1 (ko) | 2002-11-15 | 2008-01-03 | 삼성전자주식회사 | 수직 나노튜브를 이용한 비휘발성 메모리 소자 |
| KR100493166B1 (ko) | 2002-12-30 | 2005-06-02 | 삼성전자주식회사 | 수직나노튜브를 이용한 메모리 |
| US6933222B2 (en) * | 2003-01-02 | 2005-08-23 | Intel Corporation | Microcircuit fabrication and interconnection |
| WO2004105140A1 (ja) | 2003-05-22 | 2004-12-02 | Fujitsu Limited | 電界効果トランジスタ及びその製造方法 |
| US7374793B2 (en) * | 2003-12-11 | 2008-05-20 | International Business Machines Corporation | Methods and structures for promoting stable synthesis of carbon nanotubes |
| US7038299B2 (en) * | 2003-12-11 | 2006-05-02 | International Business Machines Corporation | Selective synthesis of semiconducting carbon nanotubes |
| US7211844B2 (en) * | 2004-01-29 | 2007-05-01 | International Business Machines Corporation | Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage |
| US7829883B2 (en) * | 2004-02-12 | 2010-11-09 | International Business Machines Corporation | Vertical carbon nanotube field effect transistors and arrays |
-
2004
- 2004-01-29 US US10/767,065 patent/US20050167655A1/en not_active Abandoned
-
2005
- 2005-01-03 TW TW094100109A patent/TWI343123B/zh not_active IP Right Cessation
- 2005-01-13 KR KR1020067015316A patent/KR20060127105A/ko not_active Ceased
- 2005-01-13 CN CN200580003688A patent/CN100580971C/zh not_active Expired - Lifetime
- 2005-01-13 JP JP2006550156A patent/JP2007520072A/ja active Pending
- 2005-01-13 RU RU2006130861/28A patent/RU2342315C2/ru not_active IP Right Cessation
- 2005-01-13 EP EP05701510A patent/EP1708960A1/en not_active Withdrawn
- 2005-01-13 WO PCT/EP2005/050127 patent/WO2005076381A1/en not_active Ceased
-
2006
- 2006-07-27 IL IL177125A patent/IL177125A0/en unknown
-
2007
- 2007-10-29 US US11/926,661 patent/US7691720B2/en not_active Expired - Lifetime
-
2011
- 2011-08-08 JP JP2011172859A patent/JP5511746B2/ja not_active Expired - Fee Related
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