JP2005170785A - カーボン・ナノチューブの安定な合成を促進させる方法および構造 - Google Patents
カーボン・ナノチューブの安定な合成を促進させる方法および構造 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 142
- 239000002041 carbon nanotube Substances 0.000 title claims abstract description 141
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 141
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 96
- 238000003786 synthesis reaction Methods 0.000 title claims abstract description 94
- 238000000034 method Methods 0.000 title claims abstract description 64
- 230000001737 promoting effect Effects 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 239000002071 nanotube Substances 0.000 claims abstract description 32
- 239000000376 reactant Substances 0.000 claims abstract description 25
- 230000002194 synthesizing effect Effects 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims description 37
- 239000003054 catalyst Substances 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims description 17
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 230000003197 catalytic effect Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 239000002048 multi walled nanotube Substances 0.000 claims description 3
- 230000008569 process Effects 0.000 description 13
- 238000003672 processing method Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000002243 precursor Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
- H01J1/3044—Point emitters
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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-
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- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/06—Multi-walled nanotubes
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/22—Electronic properties
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- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/34—Length
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
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- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
- Y10S977/842—Manufacture, treatment, or detection of nanostructure for carbon nanotubes or fullerenes
- Y10S977/843—Gas phase catalytic growth, i.e. chemical vapor deposition
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- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/30—Self-sustaining carbon mass or layer with impregnant or other layer
Abstract
【解決手段】この方法は、第1基板にサポートされた複数の合成サイト上にカーボン・ナノチューブを形成するステップと、ナノチューブ合成を中断するステップと、第2基板に各カーボン・ナノチューブの自由端部を載置するステップと、この第1基板を除去するステップを含む。各カーボン・ナノチューブはこの合成サイトの1つによってキャップされ、そのサイトには成長反応物質が容易にアクセス可能になっている。再開されたナノチューブ合成中は、各カーボン・ナノチューブが伸長する際、この合成サイトへのアクセスは妨げられないままである。
【選択図】図6
Description
12 基板
14 シード・パッド
16 メサまたはピラー
18 スペーサ
20 剥離層
22 (導電性)カーボン・ナノチューブ
24 カーボン・ナノチューブの先端部、自由端部
26 カーボン・ナノチューブの基部
27 基部とシード・パッドの界面
28 誘電体層
30 誘電体層の露出表面
32 ハンドリング・ウェハ
40 第1材料の層
42 層40の表面
44 第2材料の層
46 ハンドリング・ウェハ
Claims (33)
- 複数のカーボン・ナノチューブを、第1基板に載置された複数の合成サイト上で第1の長さにまで合成するステップと、
前記複数のカーボン・ナノチューブの前記合成を中断するステップと、
前記複数のカーボン・ナノチューブそれぞれの自由端部を第2基板からサポートするステップと、
前記複数の合成サイトを前記第1基板から分離するステップと、
前記複数の合成サイトで前記複数のカーボン・ナノチューブの前記合成を再開して、前記複数のカーボン・ナノチューブを前記第1の長さより長い第2の長さにまで伸長させるステップとを含む、カーボン・ナノチューブを量産する方法。 - 前記自由端部をサポートするステップが、
前記複数の合成サイトおよび前記複数のカーボン・ナノチューブを、対向する第1および第2表面を備える層で覆うステップと、
前記層の前記第1表面を前記第2基板にボンディングするステップと、
前記層の前記第2表面を、前記複数のカーボン・ナノチューブのそれぞれと前記複数の合成サイトのうちの対応するサイトとの界面が露出するのに充分な深さまで陥凹させるステップとを含む、請求項1に記載の方法。 - 前記複数のカーボン・ナノチューブがそれぞれ先端部を備え、前記層を陥凹させるステップが、
前記複数のカーボン・ナノチューブそれぞれの先端部が前記層内に埋まったままになるように前記層の前記陥凹させるステップを制限するステップを含む、請求項2に記載の方法。 - 前記複数の合成サイトがそれぞれ、カーボン・ナノチューブの合成をサポート可能な触媒材料のシード・パッドを備える、請求項2に記載の方法。
- 前記複数のカーボン・ナノチューブを合成するステップが、
前記複数の合成サイトそれぞれの前記シード・パッドと前記複数のカーボン・ナノチューブのうちの対応するカーボン・ナノチューブとの界面に反応物質を供給するステップを含む、請求項4に記載の方法。 - 合成を中断するステップが、
前記界面に反応物質を供給するステップを中止するステップを含む、請求項5に記載の方法。 - 前記カーボン・ナノチューブの合成を再開するステップが、
前記界面に反応物質を供給するステップを含む、請求項5に記載の方法。 - 前記複数の合成サイトそれぞれの前記シード・パッドを、前記第1基板を含む平面に実質的に平行なナノチューブの合成を妨げるスペーサで取り囲むステップをさらに含む、請求項3に記載の方法。
- 前記複数の合成サイトを前記第1基板から分離するステップが、
前記第1基板の剥離が促進されるように前記第1基板と前記複数の合成サイトとの間に位置する剥離層を操作するステップを含む、請求項1に記載の方法。 - 前記複数のカーボン・ナノチューブそれぞれが第1基板を含む水平面に対して実質的に垂直な向きになるように、前記第1基板を含む前記水平面内で横方向のナノチューブ合成を妨げるステップをさらに含む、請求項1に記載の方法。
- 前記横方向のナノチューブ合成を妨げるステップが、
前記複数の合成サイトのそれぞれを横方向のナノチューブ合成を止めさせるスペーサで取り囲むステップを含む、請求項10に記載の方法。 - 単一のカーボン・ナノチューブが、前記複数の合成サイトそれぞれに載置される、請求項1に記載の方法。
- 前記第1基板上で前記複数の合成サイトを形成するステップをさらに含む、請求項1に記載の方法。
- 前記複数の合成サイトそれぞれを、前記複数のカーボン・ナノチューブのうちの1つの合成をサポートするように寸法設定する、請求項1に記載の方法。
- 前記複数のカーボン・ナノチューブを合成するステップが、
前記複数の合成サイトで化学的気相堆積法を実施するステップを含む、請求項1に記載の方法。 - 前記複数の合成サイトそれぞれが、前記複数のカーボン・ナノチューブの合成をサポートすることのできる触媒材料からなるシード・パッドを備える、請求項1に記載の方法。
- 前記化学的気相堆積法を実施するステップが、
前記複数のカーボン・ナノチューブを合成するために前記触媒材料の触媒作用を受ける反応物質を前記シード・パッドに供給するステップを含む、請求項16に記載の方法。 - 前記複数のカーボン・ナノチューブの合成を再開するステップが、
前記複数の合成サイトで化学的気相堆積法を実施するステップを含む、請求項1に記載の方法。 - 前記複数の合成サイトそれぞれが、前記複数のカーボン・ナノチューブの合成をサポートすることのできる触媒材料からなるシード・パッドを備える、請求項18に記載の方法。
- 化学的気相堆積法を実施するステップが、
前記複数のカーボン・ナノチューブを合成するために、前記触媒材料の触媒作用を受ける反応物質を前記シード・パッドに供給するステップを含む、請求項19に記載の方法。 - 前記複数のカーボン・ナノチューブが多重壁(多層)カーボン・ナノチューブである、請求項1に記載の方法。
- 前記複数のカーボン・ナノチューブが実質的に均一な長さである、請求項1に記載の方法。
- 前記自由端部をサポートするステップが
前記複数の合成サイトおよび前記複数のカーボン・ナノチューブを、第1層および第2層で覆うステップと、
前記第2層を前記第2基板にボンディングするステップと、
前記第1層を、前記複数の合成サイトが露出するのに充分な深さまで前記第2層に対して選択的に除去するステップとを含む、請求項1に記載の方法。 - 前記第1層上に前記第2層を形成する前に、前記複数のカーボン・ナノチューブそれぞれの自由端部が前記第2層内に埋め込まれるように、前記複数のカーボン・ナノチューブそれぞれの前記自由端部が露出するのに充分な深さまで前記第1層を除去するステップをさらに含む、請求項23に記載の方法。
- 前記第1層を除去するステップが、前記複数のカーボン・ナノチューブのうちの少なくとも1つの長さを短くする、請求項24に記載の方法。
- 基板と、
前記基板と結合された第1端部と第2端部との間にそれぞれ延びる複数のカーボン・ナノチューブと、
前記複数のカーボン・ナノチューブのうちの対応するカーボン・ナノチューブの前記第2端部とそれぞれが結合された複数の合成サイトとを備える構造。 - 前記複数の合成サイトそれぞれを、単一のカーボン・ナノチューブの合成をサポートするように寸法設定する、請求項26に記載の構造。
- 前記複数のカーボン・ナノチューブそれぞれが、前記複数の合成サイトのうちの対応するサイトに載置される、請求項26に記載の構造。
- 前記基板が、
前記複数の合成サイトおよび前記複数のカーボン・ナノチューブを覆い、前記基板にボンディングされた第1表面、および第2表面を有する層をさらに備える、請求項26に記載の構造。 - 前記複数のカーボン・ナノチューブの前記第1端部が、前記層内に埋め込まれる、請求項29に記載の構造。
- 前記層の前記第2表面を、前記複数の合成サイトが露出するのに充分な深さまで陥凹させる、請求項29に記載の構造。
- 前記複数のカーボン・ナノチューブが、多重壁カーボン・ナノチューブである、請求項26に記載の構造。
- 前記複数のカーボン・ナノチューブが実質的に均一な長さである、請求項26に記載の構造。
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