ATE389242T1 - Vertikal-feldeffekttransistoren mit in einem abstandsschichtdefinierten durchgang aufgewachsenen halbleitenden nanoröhren - Google Patents

Vertikal-feldeffekttransistoren mit in einem abstandsschichtdefinierten durchgang aufgewachsenen halbleitenden nanoröhren

Info

Publication number
ATE389242T1
ATE389242T1 AT05701511T AT05701511T ATE389242T1 AT E389242 T1 ATE389242 T1 AT E389242T1 AT 05701511 T AT05701511 T AT 05701511T AT 05701511 T AT05701511 T AT 05701511T AT E389242 T1 ATE389242 T1 AT E389242T1
Authority
AT
Austria
Prior art keywords
field effect
effect transistors
vertical field
spacer
passage
Prior art date
Application number
AT05701511T
Other languages
German (de)
English (en)
Inventor
Toshiharu Furukawa
Mark Hakey
Steven Holmes
David Horak
Peter Mitchell
Larry Nesbit
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of ATE389242T1 publication Critical patent/ATE389242T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/491—Vertical transistors, e.g. vertical carbon nanotube field effect transistors [CNT-FETs]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
    • H10K85/221—Carbon nanotubes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/707—Integrated with dissimilar structures on a common substrate having different types of nanoscale structures or devices on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/72—On an electrically conducting, semi-conducting, or semi-insulating substrate
    • Y10S977/721—On a silicon substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/724—Devices having flexible or movable element

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Carbon And Carbon Compounds (AREA)
AT05701511T 2004-01-29 2005-01-13 Vertikal-feldeffekttransistoren mit in einem abstandsschichtdefinierten durchgang aufgewachsenen halbleitenden nanoröhren ATE389242T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/767,039 US7211844B2 (en) 2004-01-29 2004-01-29 Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage

Publications (1)

Publication Number Publication Date
ATE389242T1 true ATE389242T1 (de) 2008-03-15

Family

ID=34807627

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05701511T ATE389242T1 (de) 2004-01-29 2005-01-13 Vertikal-feldeffekttransistoren mit in einem abstandsschichtdefinierten durchgang aufgewachsenen halbleitenden nanoröhren

Country Status (11)

Country Link
US (2) US7211844B2 (https=)
EP (1) EP1709700B1 (https=)
JP (1) JP4521409B2 (https=)
KR (1) KR100974162B1 (https=)
CN (1) CN100568573C (https=)
AT (1) ATE389242T1 (https=)
DE (1) DE602005005302T2 (https=)
IL (1) IL177126A (https=)
RU (1) RU2338683C2 (https=)
TW (1) TWI335669B (https=)
WO (1) WO2005076382A1 (https=)

Families Citing this family (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7374793B2 (en) * 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
US7038299B2 (en) 2003-12-11 2006-05-02 International Business Machines Corporation Selective synthesis of semiconducting carbon nanotubes
US20050167655A1 (en) * 2004-01-29 2005-08-04 International Business Machines Corporation Vertical nanotube semiconductor device structures and methods of forming the same
US7211844B2 (en) 2004-01-29 2007-05-01 International Business Machines Corporation Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
US7829883B2 (en) * 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays
US8075863B2 (en) * 2004-05-26 2011-12-13 Massachusetts Institute Of Technology Methods and devices for growth and/or assembly of nanostructures
US7109546B2 (en) 2004-06-29 2006-09-19 International Business Machines Corporation Horizontal memory gain cells
US7233071B2 (en) 2004-10-04 2007-06-19 International Business Machines Corporation Low-k dielectric layer based upon carbon nanostructures
US7268077B2 (en) * 2005-12-02 2007-09-11 Intel Corporation Carbon nanotube reinforced metallic layer
US7713858B2 (en) * 2006-03-31 2010-05-11 Intel Corporation Carbon nanotube-solder composite structures for interconnects, process of making same, packages containing same, and systems containing same
US8785058B2 (en) * 2006-04-07 2014-07-22 New Jersey Institute Of Technology Integrated biofuel cell with aligned nanotube electrodes and method of use thereof
EP2074660A1 (en) * 2006-09-04 2009-07-01 Nxp B.V. Control of carbon nanostructure growth in an interconnect structure
US8546027B2 (en) * 2007-06-20 2013-10-01 New Jersey Institute Of Technology System and method for directed self-assembly technique for the creation of carbon nanotube sensors and bio-fuel cells on single plane
US7736979B2 (en) * 2007-06-20 2010-06-15 New Jersey Institute Of Technology Method of forming nanotube vertical field effect transistor
US7964143B2 (en) 2007-06-20 2011-06-21 New Jersey Institute Of Technology Nanotube device and method of fabrication
KR100927634B1 (ko) * 2007-09-07 2009-11-20 한국표준과학연구원 멀티 게이트 나노튜브 소자의 제조 방법 및 그 소자
US7892956B2 (en) * 2007-09-24 2011-02-22 International Business Machines Corporation Methods of manufacture of vertical nanowire FET devices
US8624224B2 (en) 2008-01-24 2014-01-07 Nano-Electronic And Photonic Devices And Circuits, Llc Nanotube array bipolar transistors
CN101905877B (zh) * 2009-06-02 2013-01-09 清华大学 碳纳米管膜的制备方法
CN101993055B (zh) * 2009-08-14 2013-02-13 清华大学 碳纳米管膜先驱、碳纳米管膜及其制备方法
TWI417238B (zh) * 2009-08-25 2013-12-01 Hon Hai Prec Ind Co Ltd 奈米碳管膜先驅、奈米碳管膜及其製備方法
US8350360B1 (en) 2009-08-28 2013-01-08 Lockheed Martin Corporation Four-terminal carbon nanotube capacitors
US8405189B1 (en) * 2010-02-08 2013-03-26 Lockheed Martin Corporation Carbon nanotube (CNT) capacitors and devices integrated with CNT capacitors
KR101927415B1 (ko) 2012-11-05 2019-03-07 삼성전자주식회사 나노갭 소자 및 이로부터의 신호를 처리하는 방법
US10654718B2 (en) * 2013-09-20 2020-05-19 Nantero, Inc. Scalable nanotube fabrics and methods for making same
EP3053185A4 (en) * 2013-10-03 2017-05-17 Intel Corporation Internal spacers for nanowire transistors and method of fabrication thereof
RU2601044C2 (ru) * 2015-02-04 2016-10-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Тамбовский государственный технический университет" ФГБОУ ВПО ТГТУ Способ формирования углеродных нанообъектов на ситалловых подложках
US9899529B2 (en) 2015-11-09 2018-02-20 Samsung Electronics Co., Ltd. Method to make self-aligned vertical field effect transistor
TWI680535B (zh) 2016-06-14 2019-12-21 美商應用材料股份有限公司 金屬及含金屬化合物之氧化體積膨脹
TWI719262B (zh) 2016-11-03 2021-02-21 美商應用材料股份有限公司 用於圖案化之薄膜的沉積與處理
WO2018089351A1 (en) * 2016-11-08 2018-05-17 Applied Materials, Inc. Geometric control of bottom-up pillars for patterning applications
TW201839897A (zh) 2017-02-22 2018-11-01 美商應用材料股份有限公司 自對準接觸圖案化之臨界尺寸控制
WO2018200212A1 (en) 2017-04-25 2018-11-01 Applied Materials, Inc. Selective deposition of tungsten for simplified process flow of tungsten oxide pillar formation
US10840186B2 (en) 2017-06-10 2020-11-17 Applied Materials, Inc. Methods of forming self-aligned vias and air gaps
TW201906035A (zh) 2017-06-24 2019-02-01 美商微材料有限責任公司 生產完全自我對準的介層窗及觸點之方法
TWI760540B (zh) * 2017-08-13 2022-04-11 美商應用材料股份有限公司 自對準高深寬比結構及製作方法
WO2019046402A1 (en) 2017-08-31 2019-03-07 Micromaterials Llc METHODS FOR GENERATING SELF-ALIGNED INTERCONNECTION HOLES
WO2019046399A1 (en) 2017-08-31 2019-03-07 Micromaterials Llc METHODS FOR PRODUCING SELF-ALIGNED INTERCONNECTION HOLES
US10600688B2 (en) 2017-09-06 2020-03-24 Micromaterials Llc Methods of producing self-aligned vias
CN110034017A (zh) 2017-12-07 2019-07-19 微材料有限责任公司 用于使金属和阻挡层-衬垫可控凹陷的方法
EP3499557A1 (en) 2017-12-15 2019-06-19 Micromaterials LLC Selectively etched self-aligned via processes
TW201939628A (zh) 2018-03-02 2019-10-01 美商微材料有限責任公司 移除金屬氧化物的方法
US10790191B2 (en) 2018-05-08 2020-09-29 Micromaterials Llc Selective removal process to create high aspect ratio fully self-aligned via
TW202011547A (zh) 2018-05-16 2020-03-16 美商微材料有限責任公司 用於產生完全自對準的通孔的方法
WO2019236350A1 (en) 2018-06-08 2019-12-12 Micromaterials Llc A method for creating a fully self-aligned via
CN108807170B (zh) * 2018-06-11 2021-10-22 中国科学院微电子研究所 一种纳米线的制作方法
US11164938B2 (en) 2019-03-26 2021-11-02 Micromaterials Llc DRAM capacitor module
US20240421187A1 (en) * 2023-06-16 2024-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Device having mg contacts coupled by mp contact and method of manufacturing same

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796573A (en) * 1997-05-29 1998-08-18 International Business Machines Corporation Overhanging separator for self-defining stacked capacitor
US6250984B1 (en) * 1999-01-25 2001-06-26 Agere Systems Guardian Corp. Article comprising enhanced nanotube emitter structure and process for fabricating article
RU2173003C2 (ru) * 1999-11-25 2001-08-27 Септре Электроникс Лимитед Способ образования кремниевой наноструктуры, решетки кремниевых квантовых проводков и основанных на них устройств
JP3658342B2 (ja) * 2000-05-30 2005-06-08 キヤノン株式会社 電子放出素子、電子源及び画像形成装置、並びにテレビジョン放送表示装置
KR100360476B1 (ko) * 2000-06-27 2002-11-08 삼성전자 주식회사 탄소나노튜브를 이용한 나노 크기 수직 트랜지스터 및 그제조방법
DE10036897C1 (de) * 2000-07-28 2002-01-03 Infineon Technologies Ag Feldeffekttransistor, Schaltungsanordnung und Verfahren zum Herstellen eines Feldeffekttransistors
DE60131036T2 (de) 2000-11-01 2008-02-14 Japan Science And Technology Agency, Kawaguchi Ein NOT-Schaltkreis
US6423583B1 (en) * 2001-01-03 2002-07-23 International Business Machines Corporation Methodology for electrically induced selective breakdown of nanotubes
US7084507B2 (en) * 2001-05-02 2006-08-01 Fujitsu Limited Integrated circuit device and method of producing the same
EP1468423A2 (en) 2002-01-18 2004-10-20 California Institute Of Technology Array-based architecture for molecular electronics
JP5165828B2 (ja) 2002-02-09 2013-03-21 三星電子株式会社 炭素ナノチューブを用いるメモリ素子及びその製造方法
US6515325B1 (en) * 2002-03-06 2003-02-04 Micron Technology, Inc. Nanotube semiconductor devices and methods for making the same
US6891227B2 (en) * 2002-03-20 2005-05-10 International Business Machines Corporation Self-aligned nanotube field effect transistor and method of fabricating same
US20030211724A1 (en) 2002-05-10 2003-11-13 Texas Instruments Incorporated Providing electrical conductivity between an active region and a conductive layer in a semiconductor device using carbon nanotubes
DE10250984A1 (de) 2002-10-29 2004-05-19 Hahn-Meitner-Institut Berlin Gmbh Feldeffekttransistor sowie Verfahren zu seiner Herstellung
DE10250830B4 (de) 2002-10-31 2015-02-26 Qimonda Ag Verfahren zum Herstellung eines Schaltkreis-Arrays
KR100790859B1 (ko) 2002-11-15 2008-01-03 삼성전자주식회사 수직 나노튜브를 이용한 비휘발성 메모리 소자
KR100493166B1 (ko) 2002-12-30 2005-06-02 삼성전자주식회사 수직나노튜브를 이용한 메모리
US6933222B2 (en) * 2003-01-02 2005-08-23 Intel Corporation Microcircuit fabrication and interconnection
WO2004105140A1 (ja) 2003-05-22 2004-12-02 Fujitsu Limited 電界効果トランジスタ及びその製造方法
US7038299B2 (en) 2003-12-11 2006-05-02 International Business Machines Corporation Selective synthesis of semiconducting carbon nanotubes
US7374793B2 (en) 2003-12-11 2008-05-20 International Business Machines Corporation Methods and structures for promoting stable synthesis of carbon nanotubes
US7211844B2 (en) 2004-01-29 2007-05-01 International Business Machines Corporation Vertical field effect transistors incorporating semiconducting nanotubes grown in a spacer-defined passage
US20050167655A1 (en) 2004-01-29 2005-08-04 International Business Machines Corporation Vertical nanotube semiconductor device structures and methods of forming the same
US7829883B2 (en) 2004-02-12 2010-11-09 International Business Machines Corporation Vertical carbon nanotube field effect transistors and arrays

Also Published As

Publication number Publication date
CN1910767A (zh) 2007-02-07
EP1709700B1 (en) 2008-03-12
DE602005005302D1 (de) 2008-04-24
US7211844B2 (en) 2007-05-01
IL177126A0 (en) 2006-12-10
JP4521409B2 (ja) 2010-08-11
EP1709700A1 (en) 2006-10-11
US7329567B2 (en) 2008-02-12
CN100568573C (zh) 2009-12-09
RU2338683C2 (ru) 2008-11-20
TWI335669B (en) 2011-01-01
RU2006130863A (ru) 2008-03-10
KR100974162B1 (ko) 2010-08-04
WO2005076382A1 (en) 2005-08-18
US20050266627A1 (en) 2005-12-01
US20050167740A1 (en) 2005-08-04
TW200537687A (en) 2005-11-16
KR20060125845A (ko) 2006-12-06
DE602005005302T2 (de) 2009-03-12
IL177126A (en) 2010-06-30
JP2007520073A (ja) 2007-07-19

Similar Documents

Publication Publication Date Title
ATE389242T1 (de) Vertikal-feldeffekttransistoren mit in einem abstandsschichtdefinierten durchgang aufgewachsenen halbleitenden nanoröhren
Jiang et al. Rational growth of branched nanowire heterostructures with synthetically encoded properties and function
GB2500556B (en) Silicon nanotube mosfet
TW200616152A (en) Forming abrupt source drain metal gate transistors
TW200705659A (en) High electron mobility transistor, field-effect transistor, epitaxial substrate, method of manufacturing epitaxial substrate, and method of manufacturing group iii nitride transistor
TW200746428A (en) Tunneling transistor with sublithographic channel
JP2010258442A5 (ja) 溝の形成方法、および電界効果トランジスタの製造方法
EP2055672A4 (en) N-SEMICONDUCTOR CARBON NANOMATERIAL, METHOD FOR PRODUCING N-SEMICONDUCTOR CARBON NANOMATERIAL AND METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE
WO2010113518A1 (ja) 電界効果トランジスタ
EA201390802A1 (ru) Эпитаксиальное выращивание нанопроволоки на графитовой подложке
GB2535418A (en) Semiconductor nanowire fabrication
NZ592399A (en) Vertical junction field effect transistors having sloped sidewalls and methods of making
ATE516600T1 (de) Kohlenstoff-nanoröhren-transistor und verfahren zur herstellung eines selbstausgerichteten transistors mit kohlenstoff-nanoröhre
WO2008073926A3 (en) Formation of epitaxial layers containing silicon
EP1689000A4 (en) SEMICONDUCTOR ELEMENT
ATE514179T1 (de) Verfahren zur herstellung einer nitridbasierten halbleiteroptikvorrichtung
CN207210081U (zh) 一种用于水体修复的前滞生态处理系统
TW200943388A (en) Method of forming an embedded silicon carbon epitaxial layer
CN106941117A (zh) 基于悬浮超结的氮化镓基异质结电流孔径器件及其制作方法
JP2010212651A5 (https=)
CN107146811A (zh) 基于阻挡层调制结构的电流孔径功率晶体管及其制作方法
CN202218510U (zh) 新型马铃薯种植地基模块
TW200725882A (en) Five channel fin transistor and method for fabricating the same
TW200739749A (en) Method of fabricating a MOSFET transistor having an anti-halo for modifying narrow width device performance
CN201015339Y (zh) 新型花盆

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties