JP2007519230A - Iii族窒化物素子の分離のための構造および方法 - Google Patents
Iii族窒化物素子の分離のための構造および方法 Download PDFInfo
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- JP2007519230A JP2007519230A JP2006542796A JP2006542796A JP2007519230A JP 2007519230 A JP2007519230 A JP 2007519230A JP 2006542796 A JP2006542796 A JP 2006542796A JP 2006542796 A JP2006542796 A JP 2006542796A JP 2007519230 A JP2007519230 A JP 2007519230A
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- 238000000034 method Methods 0.000 title claims abstract description 62
- 238000002955 isolation Methods 0.000 title claims abstract description 33
- 150000004767 nitrides Chemical class 0.000 title claims description 26
- 239000000463 material Substances 0.000 claims abstract description 83
- 238000005530 etching Methods 0.000 claims abstract description 51
- 239000004065 semiconductor Substances 0.000 claims abstract description 48
- 239000002019 doping agent Substances 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 abstract description 38
- 230000006378 damage Effects 0.000 abstract description 15
- 239000013078 crystal Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 53
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 14
- 229910002601 GaN Inorganic materials 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 230000005684 electric field Effects 0.000 description 8
- 238000001020 plasma etching Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/7605—Making of isolation regions between components between components manufactured in an active substrate comprising AIII BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/764—Air gaps
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Junction Field-Effect Transistors (AREA)
- Weting (AREA)
Abstract
【解決手段】III族窒化物素子の分離は、従来の分離技術に比べて結晶の損傷が少ない滑らかな形状を提供するドーパント選択エッチングによって実行されてよい。ドーパント選択エッチングは、電気化学エッチングまたは光電気化学エッチングであってよい。所望の分離領域は、エッチングすべき半導体材料の導電型を変更することにより特定されてよい。エッチング処理は、導電層を除去して、導電層の上の素子を分離することができる。エッチング処理は、自動的に停止することが可能であり、選択的にドープされた半導体材料が除去された時点で、自動的に終了する。
【選択図】 図1C
Description
Claims (9)
- III族窒化物半導体素子を分離するための方法であって、
分離すべき素子の近傍の半導体材料の所定の表面領域を選択的に露出させる工程と、
前記半導体材料にドーパント選択エッチングを適用して、前記所定の表面領域において露出された前記半導体材料を除去する工程と、を備える、方法。 - 請求項1に記載の方法であって、前記エッチングは電気化学エッチングである、方法。
- 請求項1に記載の方法であって、前記エッチングは光電気化学エッチングである、方法。
- III族窒化物素子のための分離構造であって、
絶縁性を有する基層と、
前記基層の上に重ねられ、上部に前記素子が形成される導電層と、
前記素子の周囲で少なくとも部分的にエッチングされた分離空間と、を備え、
前記空間は、ドーパント選択エッチングを用いて形成される、構造。 - 請求項4に記載の構造であって、前記ドーパント選択エッチングは電気化学エッチングである、構造。
- 請求項4に記載の構造であって、前記ドーパント選択エッチングは光電気化学エッチングである、構造。
- 請求項1に記載の構造であって、前記所定の表面領域は、前記分離すべき素子の近傍の前記半導体材料の導電特性から変更された導電特性を有することにより選択的に露出される、構造。
- 請求項7に記載の方法であって、前記エッチングは電気化学エッチングである、方法。
- 請求項7に記載の方法であって、前記エッチングは光電気化学エッチングである、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US52763503P | 2003-12-05 | 2003-12-05 | |
US11/004,146 US8120139B2 (en) | 2003-12-05 | 2004-12-03 | Void isolated III-nitride device |
PCT/US2004/040552 WO2005057622A2 (en) | 2003-12-05 | 2004-12-06 | Structure and method for iii-nitride device isolation |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007519230A true JP2007519230A (ja) | 2007-07-12 |
JP4490440B2 JP4490440B2 (ja) | 2010-06-23 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006542796A Expired - Fee Related JP4490440B2 (ja) | 2003-12-05 | 2004-12-06 | Iii族窒化物素子の分離のための構造および方法 |
Country Status (4)
Country | Link |
---|---|
US (2) | US8120139B2 (ja) |
EP (1) | EP1690285B1 (ja) |
JP (1) | JP4490440B2 (ja) |
WO (1) | WO2005057622A2 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020217768A1 (ja) * | 2019-04-26 | 2020-10-29 | 株式会社サイオクス | 構造体の製造方法および中間構造体 |
JP2020184605A (ja) * | 2019-04-26 | 2020-11-12 | 株式会社サイオクス | 構造体の製造方法および中間構造体 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101045573B1 (ko) * | 2005-07-06 | 2011-07-01 | 인터내쇼널 렉티파이어 코포레이션 | Ⅲ족 질화물 인헨스먼트 모드 소자 |
Citations (3)
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JPH08203862A (ja) * | 1995-01-27 | 1996-08-09 | Matsushita Electric Ind Co Ltd | 窒化物系化合物半導体のエッチング方法 |
JPH10233385A (ja) * | 1997-02-20 | 1998-09-02 | Sharp Corp | 窒化物半導体のエッチング方法 |
JP2002231705A (ja) * | 2001-02-06 | 2002-08-16 | Sony Corp | エッチング方法および半導体装置の製造方法 |
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US4830980A (en) * | 1988-04-22 | 1989-05-16 | Hughes Aircraft Company | Making complementary integrated p-MODFET and n-MODFET |
US5189297A (en) * | 1988-08-29 | 1993-02-23 | Santa Barbara Research Center | Planar double-layer heterojunction HgCdTe photodiodes and methods for fabricating same |
JP2626220B2 (ja) * | 1990-09-17 | 1997-07-02 | 日本電気株式会社 | 電界効果トランジスタ及びその製造方法 |
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-
2004
- 2004-12-03 US US11/004,146 patent/US8120139B2/en not_active Expired - Fee Related
- 2004-12-06 JP JP2006542796A patent/JP4490440B2/ja not_active Expired - Fee Related
- 2004-12-06 EP EP04817943.6A patent/EP1690285B1/en active Active
- 2004-12-06 WO PCT/US2004/040552 patent/WO2005057622A2/en active Application Filing
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2006
- 2006-05-19 US US11/437,055 patent/US8748204B2/en not_active Expired - Fee Related
Patent Citations (3)
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JPH08203862A (ja) * | 1995-01-27 | 1996-08-09 | Matsushita Electric Ind Co Ltd | 窒化物系化合物半導体のエッチング方法 |
JPH10233385A (ja) * | 1997-02-20 | 1998-09-02 | Sharp Corp | 窒化物半導体のエッチング方法 |
JP2002231705A (ja) * | 2001-02-06 | 2002-08-16 | Sony Corp | エッチング方法および半導体装置の製造方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020217768A1 (ja) * | 2019-04-26 | 2020-10-29 | 株式会社サイオクス | 構造体の製造方法および中間構造体 |
JP2020184605A (ja) * | 2019-04-26 | 2020-11-12 | 株式会社サイオクス | 構造体の製造方法および中間構造体 |
JP2020184601A (ja) * | 2019-04-26 | 2020-11-12 | 株式会社サイオクス | 構造体の製造方法および中間構造体 |
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JP7254639B2 (ja) | 2019-04-26 | 2023-04-10 | 住友化学株式会社 | 素子の製造方法 |
Also Published As
Publication number | Publication date |
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JP4490440B2 (ja) | 2010-06-23 |
US20050142810A1 (en) | 2005-06-30 |
EP1690285A4 (en) | 2011-11-16 |
US8748204B2 (en) | 2014-06-10 |
WO2005057622A3 (en) | 2006-12-21 |
US20060223275A1 (en) | 2006-10-05 |
EP1690285A2 (en) | 2006-08-16 |
US8120139B2 (en) | 2012-02-21 |
EP1690285B1 (en) | 2015-09-30 |
WO2005057622A2 (en) | 2005-06-23 |
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