JP2007519223A5 - - Google Patents
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- Publication number
- JP2007519223A5 JP2007519223A5 JP2006524911A JP2006524911A JP2007519223A5 JP 2007519223 A5 JP2007519223 A5 JP 2007519223A5 JP 2006524911 A JP2006524911 A JP 2006524911A JP 2006524911 A JP2006524911 A JP 2006524911A JP 2007519223 A5 JP2007519223 A5 JP 2007519223A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- strained
- epitaxial
- thickness
- grown
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 125000006850 spacer group Chemical group 0.000 claims description 43
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 16
- 239000002019 doping agent Substances 0.000 claims description 4
- 239000000758 substrate Substances 0.000 claims 13
- 239000012212 insulator Substances 0.000 claims 11
- 239000004065 semiconductor Substances 0.000 claims 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 6
- 229910052710 silicon Inorganic materials 0.000 claims 6
- 239000010703 silicon Substances 0.000 claims 6
- 239000004020 conductor Substances 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003811 SiGeC Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- 238000001289 rapid thermal chemical vapour deposition Methods 0.000 description 1
- 238000000038 ultrahigh vacuum chemical vapour deposition Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/652,400 US6855963B1 (en) | 2003-08-29 | 2003-08-29 | Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate |
| US10/652,400 | 2003-08-29 | ||
| PCT/US2004/028045 WO2005036613A2 (en) | 2003-08-29 | 2004-08-27 | Ultra high-speed si/sige modulation-doped field effect transistors on ultra thin soi/sgoi substrate |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007519223A JP2007519223A (ja) | 2007-07-12 |
| JP2007519223A5 true JP2007519223A5 (enExample) | 2012-11-29 |
| JP5159107B2 JP5159107B2 (ja) | 2013-03-06 |
Family
ID=34116792
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006524911A Expired - Fee Related JP5159107B2 (ja) | 2003-08-29 | 2004-08-27 | 極薄ｓｏｉ／ｓｇｏｉ基板上の超高速ｓｉ／ｓｉｇｅ変調ドープ電界効果トランジスタ |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US6855963B1 (enExample) |
| EP (1) | EP1685590A2 (enExample) |
| JP (1) | JP5159107B2 (enExample) |
| KR (1) | KR100826838B1 (enExample) |
| CN (1) | CN100517614C (enExample) |
| WO (1) | WO2005036613A2 (enExample) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7132338B2 (en) * | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
| US7166528B2 (en) * | 2003-10-10 | 2007-01-23 | Applied Materials, Inc. | Methods of selective deposition of heavily doped epitaxial SiGe |
| US7224007B1 (en) * | 2004-01-12 | 2007-05-29 | Advanced Micro Devices, Inc. | Multi-channel transistor with tunable hot carrier effect |
| US20060151787A1 (en) * | 2005-01-12 | 2006-07-13 | International Business Machines Corporation | LOW CONCENTRATION SiGe BUFFER DURING STRAINED Si GROWTH OF SSGOI MATERIAL FOR DOPANT DIFFUSION CONTROL AND DEFECT REDUCTION |
| US7465972B2 (en) * | 2005-01-21 | 2008-12-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | High performance CMOS device design |
| US7470972B2 (en) * | 2005-03-11 | 2008-12-30 | Intel Corporation | Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress |
| US20070054460A1 (en) * | 2005-06-23 | 2007-03-08 | Atmel Corporation | System and method for providing a nanoscale, highly selective, and thermally resilient silicon, germanium, or silicon-germanium etch-stop |
| US20080050883A1 (en) * | 2006-08-25 | 2008-02-28 | Atmel Corporation | Hetrojunction bipolar transistor (hbt) with periodic multilayer base |
| US20060292809A1 (en) * | 2005-06-23 | 2006-12-28 | Enicks Darwin G | Method for growth and optimization of heterojunction bipolar transistor film stacks by remote injection |
| US8039880B2 (en) * | 2005-09-13 | 2011-10-18 | Raytheon Company | High performance microwave switching devices and circuits |
| US7176504B1 (en) * | 2005-09-28 | 2007-02-13 | United Microelectronics Corp. | SiGe MOSFET with an erosion preventing Six1Gey1 layer |
| US8530934B2 (en) | 2005-11-07 | 2013-09-10 | Atmel Corporation | Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto |
| US20070102834A1 (en) * | 2005-11-07 | 2007-05-10 | Enicks Darwin G | Strain-compensated metastable compound base heterojunction bipolar transistor |
| US20070148890A1 (en) * | 2005-12-27 | 2007-06-28 | Enicks Darwin G | Oxygen enhanced metastable silicon germanium film layer |
| US7323392B2 (en) * | 2006-03-28 | 2008-01-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | High performance transistor with a highly stressed channel |
| US20070262295A1 (en) * | 2006-05-11 | 2007-11-15 | Atmel Corporation | A method for manipulation of oxygen within semiconductor materials |
| US7772060B2 (en) * | 2006-06-21 | 2010-08-10 | Texas Instruments Deutschland Gmbh | Integrated SiGe NMOS and PMOS transistors |
| US7569913B2 (en) * | 2006-10-26 | 2009-08-04 | Atmel Corporation | Boron etch-stop layer and methods related thereto |
| US7495250B2 (en) * | 2006-10-26 | 2009-02-24 | Atmel Corporation | Integrated circuit structures having a boron- and carbon-doped etch-stop and methods, devices and systems related thereto |
| US7550758B2 (en) | 2006-10-31 | 2009-06-23 | Atmel Corporation | Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator |
| US7893475B2 (en) * | 2007-01-24 | 2011-02-22 | Macronix International Co., Ltd. | Dynamic random access memory cell and manufacturing method thereof |
| US7791063B2 (en) * | 2007-08-30 | 2010-09-07 | Intel Corporation | High hole mobility p-channel Ge transistor structure on Si substrate |
| CN100570823C (zh) * | 2007-11-06 | 2009-12-16 | 清华大学 | 一种使用缩颈外延获得低位错密度外延薄膜的方法 |
| WO2009098548A1 (en) * | 2008-02-08 | 2009-08-13 | Freescale Semiconductor, Inc. | Intermediate product for a multichannel fet and process for obtaining an intermediate product |
| US8222657B2 (en) * | 2009-02-23 | 2012-07-17 | The Penn State Research Foundation | Light emitting apparatus |
| KR101087939B1 (ko) | 2009-06-17 | 2011-11-28 | 주식회사 하이닉스반도체 | 반도체 소자 및 그 제조 방법 |
| CN102623487B (zh) * | 2011-01-26 | 2015-04-08 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
| US10158044B2 (en) | 2011-12-03 | 2018-12-18 | Sensor Electronic Technology, Inc. | Epitaxy technique for growing semiconductor compounds |
| US9831382B2 (en) | 2011-12-03 | 2017-11-28 | Sensor Electronic Technology, Inc. | Epitaxy technique for growing semiconductor compounds |
| US10490697B2 (en) | 2011-12-03 | 2019-11-26 | Sensor Electronic Technology, Inc. | Epitaxy technique for growing semiconductor compounds |
| WO2013116622A1 (en) | 2012-02-01 | 2013-08-08 | Sensor Electronic Technology, Inc. | Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds |
| US8648388B2 (en) | 2012-02-15 | 2014-02-11 | International Business Machines Corporation | High performance multi-finger strained silicon germanium channel PFET and method of fabrication |
| US8891573B2 (en) | 2012-05-14 | 2014-11-18 | Arizona Board Of Regents | 6.1 angstrom III-V and II-VI semiconductor platform |
| US9525053B2 (en) | 2013-11-01 | 2016-12-20 | Samsung Electronics Co., Ltd. | Integrated circuit devices including strained channel regions and methods of forming the same |
| US9419082B2 (en) * | 2014-04-23 | 2016-08-16 | Globalfoundries Inc. | Source/drain profile engineering for enhanced p-MOSFET |
| KR102155327B1 (ko) | 2014-07-07 | 2020-09-11 | 삼성전자주식회사 | 전계 효과 트랜지스터 및 그 제조 방법 |
| US9570590B1 (en) | 2015-12-10 | 2017-02-14 | International Business Machines Corporation | Selective oxidation of buried silicon-germanium to form tensile strained silicon FinFETs |
| US9917154B2 (en) | 2016-06-29 | 2018-03-13 | International Business Machines Corporation | Strained and unstrained semiconductor device features formed on the same substrate |
| KR102403038B1 (ko) * | 2016-08-23 | 2022-05-27 | 큐로미스, 인크 | 가공된 기판과 통합된 전자 전력 디바이스 |
| CN106549039A (zh) * | 2016-11-03 | 2017-03-29 | 浙江大学 | 一种低功耗高性能锗沟道量子阱场效应晶体管 |
| CN107221583B (zh) * | 2017-05-17 | 2019-01-29 | 福建海佳彩亮光电科技有限公司 | 一种纵向结构led及其制备工艺 |
| CN111863955B (zh) * | 2019-04-25 | 2024-12-24 | 世界先进积体电路股份有限公司 | 半导体结构 |
| KR102804745B1 (ko) * | 2022-08-11 | 2025-05-12 | 충북대학교 산학협력단 | 나노시트 반도체소자 제조방법 및 이에 의하여 제조된 나노시트 반도체소자 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000031491A (ja) * | 1998-07-14 | 2000-01-28 | Hitachi Ltd | 半導体装置，半導体装置の製造方法，半導体基板および半導体基板の製造方法 |
| US6350993B1 (en) * | 1999-03-12 | 2002-02-26 | International Business Machines Corporation | High speed composite p-channel Si/SiGe heterostructure for field effect devices |
| KR100441469B1 (ko) * | 1999-03-12 | 2004-07-23 | 인터내셔널 비지네스 머신즈 코포레이션 | 전계 효과 장치용 고속 게르마늄 채널 이종구조물 |
| US6573126B2 (en) * | 2000-08-16 | 2003-06-03 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded epitaxial growth |
| US6890835B1 (en) * | 2000-10-19 | 2005-05-10 | International Business Machines Corporation | Layer transfer of low defect SiGe using an etch-back process |
| EP1399970A2 (en) * | 2000-12-04 | 2004-03-24 | Amberwave Systems Corporation | Cmos inverter circuits utilizing strained silicon surface channel mosfets |
| US6593625B2 (en) | 2001-06-12 | 2003-07-15 | International Business Machines Corporation | Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing |
| US6515335B1 (en) * | 2002-01-04 | 2003-02-04 | International Business Machines Corporation | Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same |
| US6953736B2 (en) * | 2002-07-09 | 2005-10-11 | S.O.I.Tec Silicon On Insulator Technologies S.A. | Process for transferring a layer of strained semiconductor material |
-
2003
- 2003-08-29 US US10/652,400 patent/US6855963B1/en not_active Expired - Lifetime
-
2004
- 2004-08-27 KR KR1020067003534A patent/KR100826838B1/ko not_active Expired - Fee Related
- 2004-08-27 JP JP2006524911A patent/JP5159107B2/ja not_active Expired - Fee Related
- 2004-08-27 CN CNB2004800247846A patent/CN100517614C/zh not_active Expired - Fee Related
- 2004-08-27 EP EP04809631A patent/EP1685590A2/en not_active Ceased
- 2004-08-27 WO PCT/US2004/028045 patent/WO2005036613A2/en not_active Ceased
- 2004-11-08 US US10/983,488 patent/US7098057B2/en not_active Expired - Fee Related
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