KR100826838B1 - 초박형 ｓｏｉ/ｓｇｏｉ 기판 상의 초고속 ｓｉ/ｓｉｇｅ변조 도프트 전계효과 트랜지스터들 - Google Patents

초박형 ｓｏｉ/ｓｇｏｉ 기판 상의 초고속 ｓｉ/ｓｉｇｅ변조 도프트 전계효과 트랜지스터들 Download PDF

Info

Publication number
KR100826838B1
KR100826838B1 KR1020067003534A KR20067003534A KR100826838B1 KR 100826838 B1 KR100826838 B1 KR 100826838B1 KR 1020067003534 A KR1020067003534 A KR 1020067003534A KR 20067003534 A KR20067003534 A KR 20067003534A KR 100826838 B1 KR100826838 B1 KR 100826838B1
Authority
KR
South Korea
Prior art keywords
film
range
abandoned
thickness
payment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020067003534A
Other languages
English (en)
Korean (ko)
Other versions
KR20060118407A (ko
Inventor
잭 오 츄
퀴킹 씨 오우양
Original Assignee
인터내셔널 비지네스 머신즈 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 인터내셔널 비지네스 머신즈 코포레이션 filed Critical 인터내셔널 비지네스 머신즈 코포레이션
Publication of KR20060118407A publication Critical patent/KR20060118407A/ko
Application granted granted Critical
Publication of KR100826838B1 publication Critical patent/KR100826838B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6748—Group IV materials, e.g. germanium or silicon carbide having a multilayer structure or superlattice structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
KR1020067003534A 2003-08-29 2004-08-27 초박형 ｓｏｉ/ｓｇｏｉ 기판 상의 초고속 ｓｉ/ｓｉｇｅ변조 도프트 전계효과 트랜지스터들 Expired - Fee Related KR100826838B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/652,400 2003-08-29
US10/652,400 US6855963B1 (en) 2003-08-29 2003-08-29 Ultra high-speed Si/SiGe modulation-doped field effect transistors on ultra thin SOI/SGOI substrate

Publications (2)

Publication Number Publication Date
KR20060118407A KR20060118407A (ko) 2006-11-23
KR100826838B1 true KR100826838B1 (ko) 2008-05-06

Family

ID=34116792

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067003534A Expired - Fee Related KR100826838B1 (ko) 2003-08-29 2004-08-27 초박형 ｓｏｉ/ｓｇｏｉ 기판 상의 초고속 ｓｉ/ｓｉｇｅ변조 도프트 전계효과 트랜지스터들

Country Status (6)

Country Link
US (2) US6855963B1 (enExample)
EP (1) EP1685590A2 (enExample)
JP (1) JP5159107B2 (enExample)
KR (1) KR100826838B1 (enExample)
CN (1) CN100517614C (enExample)
WO (1) WO2005036613A2 (enExample)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7132338B2 (en) * 2003-10-10 2006-11-07 Applied Materials, Inc. Methods to fabricate MOSFET devices using selective deposition process
US7166528B2 (en) * 2003-10-10 2007-01-23 Applied Materials, Inc. Methods of selective deposition of heavily doped epitaxial SiGe
US7224007B1 (en) * 2004-01-12 2007-05-29 Advanced Micro Devices, Inc. Multi-channel transistor with tunable hot carrier effect
US20060151787A1 (en) * 2005-01-12 2006-07-13 International Business Machines Corporation LOW CONCENTRATION SiGe BUFFER DURING STRAINED Si GROWTH OF SSGOI MATERIAL FOR DOPANT DIFFUSION CONTROL AND DEFECT REDUCTION
US7465972B2 (en) 2005-01-21 2008-12-16 Taiwan Semiconductor Manufacturing Company, Ltd. High performance CMOS device design
US7470972B2 (en) * 2005-03-11 2008-12-30 Intel Corporation Complementary metal oxide semiconductor integrated circuit using uniaxial compressive stress and biaxial compressive stress
US20070054460A1 (en) * 2005-06-23 2007-03-08 Atmel Corporation System and method for providing a nanoscale, highly selective, and thermally resilient silicon, germanium, or silicon-germanium etch-stop
US20060292809A1 (en) * 2005-06-23 2006-12-28 Enicks Darwin G Method for growth and optimization of heterojunction bipolar transistor film stacks by remote injection
US20080050883A1 (en) * 2006-08-25 2008-02-28 Atmel Corporation Hetrojunction bipolar transistor (hbt) with periodic multilayer base
US8039880B2 (en) * 2005-09-13 2011-10-18 Raytheon Company High performance microwave switching devices and circuits
US7176504B1 (en) * 2005-09-28 2007-02-13 United Microelectronics Corp. SiGe MOSFET with an erosion preventing Six1Gey1 layer
US8530934B2 (en) 2005-11-07 2013-09-10 Atmel Corporation Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related thereto
US20070102834A1 (en) * 2005-11-07 2007-05-10 Enicks Darwin G Strain-compensated metastable compound base heterojunction bipolar transistor
US20070148890A1 (en) * 2005-12-27 2007-06-28 Enicks Darwin G Oxygen enhanced metastable silicon germanium film layer
US7323392B2 (en) * 2006-03-28 2008-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. High performance transistor with a highly stressed channel
US20070262295A1 (en) * 2006-05-11 2007-11-15 Atmel Corporation A method for manipulation of oxygen within semiconductor materials
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
US7569913B2 (en) * 2006-10-26 2009-08-04 Atmel Corporation Boron etch-stop layer and methods related thereto
US7495250B2 (en) * 2006-10-26 2009-02-24 Atmel Corporation Integrated circuit structures having a boron- and carbon-doped etch-stop and methods, devices and systems related thereto
US7550758B2 (en) 2006-10-31 2009-06-23 Atmel Corporation Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
US7893475B2 (en) * 2007-01-24 2011-02-22 Macronix International Co., Ltd. Dynamic random access memory cell and manufacturing method thereof
US7791063B2 (en) * 2007-08-30 2010-09-07 Intel Corporation High hole mobility p-channel Ge transistor structure on Si substrate
CN100570823C (zh) * 2007-11-06 2009-12-16 清华大学 一种使用缩颈外延获得低位错密度外延薄膜的方法
US8293608B2 (en) * 2008-02-08 2012-10-23 Freescale Semiconductor, Inc. Intermediate product for a multichannel FET and process for obtaining an intermediate product
US8222657B2 (en) * 2009-02-23 2012-07-17 The Penn State Research Foundation Light emitting apparatus
KR101087939B1 (ko) 2009-06-17 2011-11-28 주식회사 하이닉스반도체 반도체 소자 및 그 제조 방법
CN102623487B (zh) * 2011-01-26 2015-04-08 中国科学院微电子研究所 半导体器件及其制造方法
US9831382B2 (en) 2011-12-03 2017-11-28 Sensor Electronic Technology, Inc. Epitaxy technique for growing semiconductor compounds
US10158044B2 (en) 2011-12-03 2018-12-18 Sensor Electronic Technology, Inc. Epitaxy technique for growing semiconductor compounds
US10490697B2 (en) 2011-12-03 2019-11-26 Sensor Electronic Technology, Inc. Epitaxy technique for growing semiconductor compounds
US10211048B2 (en) 2012-02-01 2019-02-19 Sensor Electronic Technology, Inc. Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds
US8648388B2 (en) 2012-02-15 2014-02-11 International Business Machines Corporation High performance multi-finger strained silicon germanium channel PFET and method of fabrication
US8891573B2 (en) 2012-05-14 2014-11-18 Arizona Board Of Regents 6.1 angstrom III-V and II-VI semiconductor platform
US9525053B2 (en) 2013-11-01 2016-12-20 Samsung Electronics Co., Ltd. Integrated circuit devices including strained channel regions and methods of forming the same
US9419082B2 (en) * 2014-04-23 2016-08-16 Globalfoundries Inc. Source/drain profile engineering for enhanced p-MOSFET
KR102155327B1 (ko) 2014-07-07 2020-09-11 삼성전자주식회사 전계 효과 트랜지스터 및 그 제조 방법
US9570590B1 (en) 2015-12-10 2017-02-14 International Business Machines Corporation Selective oxidation of buried silicon-germanium to form tensile strained silicon FinFETs
US9917154B2 (en) 2016-06-29 2018-03-13 International Business Machines Corporation Strained and unstrained semiconductor device features formed on the same substrate
SG10202101505UA (en) * 2016-08-23 2021-03-30 Qromis Inc Electronic power devices integrated with an engineered substrate
CN106549039A (zh) * 2016-11-03 2017-03-29 浙江大学 一种低功耗高性能锗沟道量子阱场效应晶体管
CN107221583B (zh) * 2017-05-17 2019-01-29 福建海佳彩亮光电科技有限公司 一种纵向结构led及其制备工艺
CN111863955B (zh) * 2019-04-25 2024-12-24 世界先进积体电路股份有限公司 半导体结构
KR102804745B1 (ko) * 2022-08-11 2025-05-12 충북대학교 산학협력단 나노시트 반도체소자 제조방법 및 이에 의하여 제조된 나노시트 반도체소자

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593625B2 (en) 2001-06-12 2003-07-15 International Business Machines Corporation Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000031491A (ja) * 1998-07-14 2000-01-28 Hitachi Ltd 半導体装置，半導体装置の製造方法，半導体基板および半導体基板の製造方法
KR100441469B1 (ko) * 1999-03-12 2004-07-23 인터내셔널 비지네스 머신즈 코포레이션 전계 효과 장치용 고속 게르마늄 채널 이종구조물
US6350993B1 (en) * 1999-03-12 2002-02-26 International Business Machines Corporation High speed composite p-channel Si/SiGe heterostructure for field effect devices
EP1309989B1 (en) * 2000-08-16 2007-01-10 Massachusetts Institute Of Technology Process for producing semiconductor article using graded expitaxial growth
US6890835B1 (en) * 2000-10-19 2005-05-10 International Business Machines Corporation Layer transfer of low defect SiGe using an etch-back process
AU2002228779A1 (en) * 2000-12-04 2002-06-18 Amberwave Systems Corporation Cmos inverter circuits utilizing strained silicon surface channel mosfets
US6515335B1 (en) * 2002-01-04 2003-02-04 International Business Machines Corporation Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same
US6953736B2 (en) * 2002-07-09 2005-10-11 S.O.I.Tec Silicon On Insulator Technologies S.A. Process for transferring a layer of strained semiconductor material

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6593625B2 (en) 2001-06-12 2003-07-15 International Business Machines Corporation Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing

Also Published As

Publication number Publication date
JP5159107B2 (ja) 2013-03-06
EP1685590A2 (en) 2006-08-02
US6855963B1 (en) 2005-02-15
WO2005036613A3 (en) 2005-07-07
WO2005036613A2 (en) 2005-04-21
US20050045905A1 (en) 2005-03-03
JP2007519223A (ja) 2007-07-12
US7098057B2 (en) 2006-08-29
CN100517614C (zh) 2009-07-22
US20050127392A1 (en) 2005-06-16
CN1894782A (zh) 2007-01-10
KR20060118407A (ko) 2006-11-23

Similar Documents

Publication Publication Date Title
KR100826838B1 (ko) 초박형 ｓｏｉ/ｓｇｏｉ 기판 상의 초고속 ｓｉ/ｓｉｇｅ변조 도프트 전계효과 트랜지스터들
US7679121B2 (en) Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
US7057216B2 (en) High mobility heterojunction complementary field effect transistors and methods thereof
US5534713A (en) Complementary metal-oxide semiconductor transistor logic using strained SI/SIGE heterostructure layers
CN1331240C (zh) 异质结构的锗沟道场效应器件及其制作方法
US6943407B2 (en) Low leakage heterojunction vertical transistors and high performance devices thereof
US7145167B1 (en) High speed Ge channel heterostructures for field effect devices
US6921982B2 (en) FET channel having a strained lattice structure along multiple surfaces
US6927414B2 (en) High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof
US7205604B2 (en) Ultra scalable high speed heterojunction vertical n-channel MISFETs and methods thereof
JP5255396B2 (ja) マルチファセット・ゲートｍｏｓｆｅｔデバイス
US20070148939A1 (en) Low leakage heterojunction vertical transistors and high performance devices thereof
US20120001171A1 (en) Semiconductor Structures with Rare-earths
JP2000286413A (ja) 電界効果デバイス用高速複合ｐチャネルＳｉ／ＳｉＧｅヘテロ構造
US6949761B2 (en) Structure for and method of fabricating a high-mobility field-effect transistor
US6984844B2 (en) Semiconductor device having heterojunction type MIS transistor which can operate at reduced voltage while maintaining high operation speed
Sun et al. Post-Si CMOS: III-V n-MOSFETs with high-k gate dielectrics

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

L13-X000 Limitation or reissue of ip right requested

St.27 status event code: A-2-3-L10-L13-lim-X000

U15-X000 Partial renewal or maintenance fee paid modifying the ip right scope

St.27 status event code: A-4-4-U10-U15-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20120328

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20130426

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20130426

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000