JP2007515785A - 二段階のウェーハ塗布アンダフィル - Google Patents

二段階のウェーハ塗布アンダフィル Download PDF

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JP2007515785A
JP2007515785A JP2006541112A JP2006541112A JP2007515785A JP 2007515785 A JP2007515785 A JP 2007515785A JP 2006541112 A JP2006541112 A JP 2006541112A JP 2006541112 A JP2006541112 A JP 2006541112A JP 2007515785 A JP2007515785 A JP 2007515785A
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Prior art keywords
underfill
acrylate
wafer
underfill composition
photoinitiator
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Japanese (ja)
Inventor
エイ キャネルス、ドリアン
ゴーシュ、カイラン
キレス、アマンダダブリュ
イー コール、エドワード
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LORDCORPORATION
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LORDCORPORATION
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    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
    • C08F283/10—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G on to polymers containing more than one epoxy radical per molecule
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B27/00—Layered products comprising a layer of synthetic resin
    • B32B27/28—Layered products comprising a layer of synthetic resin comprising synthetic resins not wholly covered by any one of the sub-groups B32B27/30 - B32B27/42
    • C—CHEMISTRY; METALLURGY
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    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
    • C08L33/08—Homopolymers or copolymers of acrylic acid esters
    • C—CHEMISTRY; METALLURGY
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    • C08L51/00—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers
    • C08L51/08—Compositions of graft polymers in which the grafted component is obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers grafted on to macromolecular compounds obtained otherwise than by reactions only involving unsaturated carbon-to-carbon bonds
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    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D133/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Coating compositions based on derivatives of such polymers
    • C09D133/04—Homopolymers or copolymers of esters
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
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    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
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    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
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    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2312/00—Crosslinking
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    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
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    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Wire Bonding (AREA)
  • Epoxy Resins (AREA)
  • Graft Or Block Polymers (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
JP2006541112A 2003-11-21 2004-06-02 二段階のウェーハ塗布アンダフィル Pending JP2007515785A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US52400703P 2003-11-21 2003-11-21
PCT/US2004/017749 WO2005056675A1 (fr) 2003-11-21 2004-06-02 Agents d'encapsulation appliques a une plaquette a deux etages

Publications (1)

Publication Number Publication Date
JP2007515785A true JP2007515785A (ja) 2007-06-14

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ID=34676586

Family Applications (1)

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JP2006541112A Pending JP2007515785A (ja) 2003-11-21 2004-06-02 二段階のウェーハ塗布アンダフィル

Country Status (5)

Country Link
EP (1) EP1694769A4 (fr)
JP (1) JP2007515785A (fr)
KR (1) KR100975088B1 (fr)
CN (1) CN1946795B (fr)
WO (1) WO2005056675A1 (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012509961A (ja) * 2008-11-21 2012-04-26 ヘンケル コーポレイション 相分離硬化性組成物
JP2016506978A (ja) * 2013-01-23 2016-03-07 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング アンダーフィル組成物およびそれを使用したパッケージング工程
JP2016117853A (ja) * 2014-12-22 2016-06-30 日立化成株式会社 アンダーフィル材、電子部品装置の製造方法及び電子部品装置
JP2018021163A (ja) * 2016-08-05 2018-02-08 スリーエム イノベイティブ プロパティズ カンパニー 放熱用樹脂組成物、その硬化物、及びこれらの使用方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7326369B2 (en) 2005-03-07 2008-02-05 National Starch And Chemical Investment Holding Corporation Low stress conductive adhesive
JP4699189B2 (ja) * 2005-12-01 2011-06-08 日東電工株式会社 半導体装置の製造方法及び電子部品
JP4846406B2 (ja) * 2006-03-28 2011-12-28 リンテック株式会社 チップ用保護膜形成用シート
DE102006042032A1 (de) * 2006-09-07 2008-03-27 Infineon Technologies Ag Halbleiterbauelement
WO2009079122A1 (fr) * 2007-12-18 2009-06-25 3M Innovative Properties Company Procédé de revêtement de fils fins et composition durcissable à cet effet
CN101768316B (zh) * 2010-03-04 2011-09-14 陕西科技大学 一种聚苯胺/p(mma-ba-hea)导电复合材料的制备方法
WO2011114935A1 (fr) * 2010-03-18 2011-09-22 新日鐵化学株式会社 Composition de résine époxyde et substance durcie
CN102408679B (zh) * 2011-08-29 2012-12-26 天威新能源控股有限公司 一种环氧树脂复合材料
US20150147533A1 (en) * 2012-05-25 2015-05-28 Soken Chemical & Engineering Co., Ltd. Photocurable Resin Composition for Imprinting, Production Method and Structure Thereof
CN106995584B (zh) * 2016-10-27 2019-08-23 武汉市三选科技有限公司 电容膜组成物和电容膜及该电容膜之制备和封装方法
JP2020105253A (ja) * 2018-12-26 2020-07-09 スリーエム イノベイティブ プロパティズ カンパニー シール材形成用組成物、シール材、シール材の熱硬化物及び接着構造体の製造方法
CN111635493B (zh) * 2019-06-26 2022-09-20 苏州太湖电工新材料股份有限公司 一种高导热的改性环氧树脂的制备方法
IT202000023443A1 (it) 2020-10-05 2022-04-05 Prolab Mat S R L Rete sequenziale polimerica compenetrante o semi-compenetrante e processo per ottenerla

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11228610A (ja) * 1998-02-18 1999-08-24 Jsr Corp 光硬化性樹脂組成物
WO2003052813A2 (fr) * 2001-12-14 2003-06-26 National Starch And Chemical Investment Holding Corporation Matiere de remplissage sous-jacent pouvant passer a l'etat b a double traitement thermique pour plaquette
JP2003204148A (ja) * 2001-10-29 2003-07-18 Fujitsu Ltd 電極間接続構造体の形成方法および電極間接続構造体

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69940916D1 (de) * 1998-02-18 2009-07-09 Dsm Ip Assets Bv Fotohärtbare flüssige Harzzusammensetzung
US20050256219A1 (en) * 2002-03-11 2005-11-17 Hideaki Takase Photocurable resin composition and optical component
JP4213043B2 (ja) * 2002-03-15 2009-01-21 太陽インキ製造株式会社 硬化性樹脂及びそれを含有する硬化性樹脂組成物
US7176044B2 (en) * 2002-11-25 2007-02-13 Henkel Corporation B-stageable die attach adhesives

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11228610A (ja) * 1998-02-18 1999-08-24 Jsr Corp 光硬化性樹脂組成物
JP2003204148A (ja) * 2001-10-29 2003-07-18 Fujitsu Ltd 電極間接続構造体の形成方法および電極間接続構造体
WO2003052813A2 (fr) * 2001-12-14 2003-06-26 National Starch And Chemical Investment Holding Corporation Matiere de remplissage sous-jacent pouvant passer a l'etat b a double traitement thermique pour plaquette

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012509961A (ja) * 2008-11-21 2012-04-26 ヘンケル コーポレイション 相分離硬化性組成物
JP2016506978A (ja) * 2013-01-23 2016-03-07 ヘンケル アイピー アンド ホールディング ゲゼルシャフト ミット ベシュレンクテル ハフツング アンダーフィル組成物およびそれを使用したパッケージング工程
JP2016117853A (ja) * 2014-12-22 2016-06-30 日立化成株式会社 アンダーフィル材、電子部品装置の製造方法及び電子部品装置
JP2018021163A (ja) * 2016-08-05 2018-02-08 スリーエム イノベイティブ プロパティズ カンパニー 放熱用樹脂組成物、その硬化物、及びこれらの使用方法

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CN1946795B (zh) 2010-06-23
EP1694769A1 (fr) 2006-08-30
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