JP2007513523A5 - - Google Patents

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Publication number
JP2007513523A5
JP2007513523A5 JP2006542677A JP2006542677A JP2007513523A5 JP 2007513523 A5 JP2007513523 A5 JP 2007513523A5 JP 2006542677 A JP2006542677 A JP 2006542677A JP 2006542677 A JP2006542677 A JP 2006542677A JP 2007513523 A5 JP2007513523 A5 JP 2007513523A5
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Japan
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semiconductor layer
trenches
type
adjacent
region
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JP2006542677A
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Japanese (ja)
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JP2007513523A (ja
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Priority claimed from US10/726,922 external-priority patent/US7279743B2/en
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Publication of JP2007513523A publication Critical patent/JP2007513523A/ja
Publication of JP2007513523A5 publication Critical patent/JP2007513523A5/ja
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JP2006542677A 2003-12-02 2004-11-30 クローズドセルトレンチｍｏｓ電界効果トランジスタ Pending JP2007513523A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/726,922 US7279743B2 (en) 2003-12-02 2003-12-02 Closed cell trench metal-oxide-semiconductor field effect transistor
PCT/US2004/040063 WO2005057615A2 (en) 2003-12-02 2004-11-30 Closed cell trench metal-oxide-semiconductor field effect transistor

Publications (2)

Publication Number Publication Date
JP2007513523A JP2007513523A (ja) 2007-05-24
JP2007513523A5 true JP2007513523A5 (https=) 2011-04-21

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JP2006542677A Pending JP2007513523A (ja) 2003-12-02 2004-11-30 クローズドセルトレンチｍｏｓ電界効果トランジスタ

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US (3) US7279743B2 (https=)
JP (1) JP2007513523A (https=)
DE (1) DE112004002310B4 (https=)
TW (1) TWI366249B (https=)
WO (1) WO2005057615A2 (https=)

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