TWI366249B - Closed cell trench metal-oxide-semiconductor field effect transistor - Google Patents
Closed cell trench metal-oxide-semiconductor field effect transistorInfo
- Publication number
- TWI366249B TWI366249B TW093137023A TW93137023A TWI366249B TW I366249 B TWI366249 B TW I366249B TW 093137023 A TW093137023 A TW 093137023A TW 93137023 A TW93137023 A TW 93137023A TW I366249 B TWI366249 B TW I366249B
- Authority
- TW
- Taiwan
- Prior art keywords
- oxide
- field effect
- effect transistor
- semiconductor field
- closed cell
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/726,922 US7279743B2 (en) | 2003-12-02 | 2003-12-02 | Closed cell trench metal-oxide-semiconductor field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200524085A TW200524085A (en) | 2005-07-16 |
TWI366249B true TWI366249B (en) | 2012-06-11 |
Family
ID=34620544
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093137023A TWI366249B (en) | 2003-12-02 | 2004-12-01 | Closed cell trench metal-oxide-semiconductor field effect transistor |
Country Status (5)
Country | Link |
---|---|
US (3) | US7279743B2 (zh) |
JP (1) | JP2007513523A (zh) |
DE (1) | DE112004002310B4 (zh) |
TW (1) | TWI366249B (zh) |
WO (1) | WO2005057615A2 (zh) |
Families Citing this family (72)
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US8183629B2 (en) * | 2004-05-13 | 2012-05-22 | Vishay-Siliconix | Stacked trench metal-oxide-semiconductor field effect transistor device |
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US20070238251A1 (en) * | 2006-04-05 | 2007-10-11 | M-Mos Semiconductor Sdn. Bhd. | Method of forming sub-100nm narrow trenches in semiconductor substrates |
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US10026835B2 (en) | 2009-10-28 | 2018-07-17 | Vishay-Siliconix | Field boosted metal-oxide-semiconductor field effect transistor |
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US9041126B2 (en) | 2012-09-21 | 2015-05-26 | Mie Fujitsu Semiconductor Limited | Deeply depleted MOS transistors having a screening layer and methods thereof |
WO2014061367A1 (ja) * | 2012-10-18 | 2014-04-24 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
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US9741797B2 (en) | 2013-02-05 | 2017-08-22 | Mitsubishi Electric Corporation | Insulated gate silicon carbide semiconductor device and method for manufacturing same |
US9268885B1 (en) | 2013-02-28 | 2016-02-23 | Mie Fujitsu Semiconductor Limited | Integrated circuit device methods and models with predicted device metric variations |
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US9478571B1 (en) | 2013-05-24 | 2016-10-25 | Mie Fujitsu Semiconductor Limited | Buried channel deeply depleted channel transistor |
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-
2003
- 2003-12-02 US US10/726,922 patent/US7279743B2/en not_active Expired - Fee Related
-
2004
- 2004-11-30 DE DE112004002310.6T patent/DE112004002310B4/de not_active Expired - Fee Related
- 2004-11-30 WO PCT/US2004/040063 patent/WO2005057615A2/en active Application Filing
- 2004-11-30 JP JP2006542677A patent/JP2007513523A/ja active Pending
- 2004-12-01 TW TW093137023A patent/TWI366249B/zh not_active IP Right Cessation
-
2005
- 2005-01-20 US US11/040,129 patent/US7361558B2/en not_active Expired - Fee Related
-
2008
- 2008-04-22 US US12/107,738 patent/US7833863B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US7279743B2 (en) | 2007-10-09 |
DE112004002310B4 (de) | 2016-12-15 |
WO2005057615A2 (en) | 2005-06-23 |
TW200524085A (en) | 2005-07-16 |
US7833863B1 (en) | 2010-11-16 |
US7361558B2 (en) | 2008-04-22 |
US20050148128A1 (en) | 2005-07-07 |
JP2007513523A (ja) | 2007-05-24 |
DE112004002310T5 (de) | 2006-12-14 |
US20050116282A1 (en) | 2005-06-02 |
WO2005057615A3 (en) | 2005-11-03 |
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