JP2007513523A - クローズドセルトレンチｍｏｓ電界効果トランジスタ - Google Patents

クローズドセルトレンチｍｏｓ電界効果トランジスタ Download PDF

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Publication number
JP2007513523A
JP2007513523A JP2006542677A JP2006542677A JP2007513523A JP 2007513523 A JP2007513523 A JP 2007513523A JP 2006542677 A JP2006542677 A JP 2006542677A JP 2006542677 A JP2006542677 A JP 2006542677A JP 2007513523 A JP2007513523 A JP 2007513523A
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region
gate
trenches
drain
closed cell
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JP2006542677A
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Japanese (ja)
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JP2007513523A5 (https=
Inventor
ディバ、 エヌ． パタナヤク、
ロバート シュー、
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ビシェイ−シリコニクス
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Publication of JP2007513523A publication Critical patent/JP2007513523A/ja
Publication of JP2007513523A5 publication Critical patent/JP2007513523A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 

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  • Insulated Gate Type Field-Effect Transistor (AREA)
JP2006542677A 2003-12-02 2004-11-30 クローズドセルトレンチｍｏｓ電界効果トランジスタ Pending JP2007513523A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/726,922 US7279743B2 (en) 2003-12-02 2003-12-02 Closed cell trench metal-oxide-semiconductor field effect transistor
PCT/US2004/040063 WO2005057615A2 (en) 2003-12-02 2004-11-30 Closed cell trench metal-oxide-semiconductor field effect transistor

Publications (2)

Publication Number Publication Date
JP2007513523A true JP2007513523A (ja) 2007-05-24
JP2007513523A5 JP2007513523A5 (https=) 2011-04-21

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JP2006542677A Pending JP2007513523A (ja) 2003-12-02 2004-11-30 クローズドセルトレンチｍｏｓ電界効果トランジスタ

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Country Link
US (3) US7279743B2 (https=)
JP (1) JP2007513523A (https=)
DE (1) DE112004002310B4 (https=)
TW (1) TWI366249B (https=)
WO (1) WO2005057615A2 (https=)

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JP2008516451A (ja) * 2004-10-08 2008-05-15 フェアチャイルド・セミコンダクター・コーポレーション 低ミラーキャパシタンスのｍｏｓゲート構造トランジスタ
WO2014061367A1 (ja) * 2012-10-18 2014-04-24 三菱電機株式会社 炭化珪素半導体装置およびその製造方法
US9741797B2 (en) 2013-02-05 2017-08-22 Mitsubishi Electric Corporation Insulated gate silicon carbide semiconductor device and method for manufacturing same

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US8377783B2 (en) 2010-09-30 2013-02-19 Suvolta, Inc. Method for reducing punch-through in a transistor device
US8404551B2 (en) 2010-12-03 2013-03-26 Suvolta, Inc. Source/drain extension control for advanced transistors
JP5498431B2 (ja) * 2011-02-02 2014-05-21 ローム株式会社 半導体装置およびその製造方法
US8461875B1 (en) 2011-02-18 2013-06-11 Suvolta, Inc. Digital circuits having improved transistors, and methods therefor
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US8999861B1 (en) 2011-05-11 2015-04-07 Suvolta, Inc. Semiconductor structure with substitutional boron and method for fabrication thereof
US8811068B1 (en) 2011-05-13 2014-08-19 Suvolta, Inc. Integrated circuit devices and methods
US8569156B1 (en) 2011-05-16 2013-10-29 Suvolta, Inc. Reducing or eliminating pre-amorphization in transistor manufacture
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US8995204B2 (en) 2011-06-23 2015-03-31 Suvolta, Inc. Circuit devices and methods having adjustable transistor body bias
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US8748986B1 (en) 2011-08-05 2014-06-10 Suvolta, Inc. Electronic device with controlled threshold voltage
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US8614128B1 (en) 2011-08-23 2013-12-24 Suvolta, Inc. CMOS structures and processes based on selective thinning
US8645878B1 (en) 2011-08-23 2014-02-04 Suvolta, Inc. Porting a circuit design from a first semiconductor process to a second semiconductor process
US8713511B1 (en) 2011-09-16 2014-04-29 Suvolta, Inc. Tools and methods for yield-aware semiconductor manufacturing process target generation
US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
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US9268885B1 (en) 2013-02-28 2016-02-23 Mie Fujitsu Semiconductor Limited Integrated circuit device methods and models with predicted device metric variations
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US10510843B2 (en) 2013-02-05 2019-12-17 Mitsubishi Electric Corporation Insulated gate silicon carbide semiconductor device and method for manufacturing same

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Publication number Publication date
US7279743B2 (en) 2007-10-09
US20050148128A1 (en) 2005-07-07
DE112004002310B4 (de) 2016-12-15
DE112004002310T5 (de) 2006-12-14
US20050116282A1 (en) 2005-06-02
WO2005057615A3 (en) 2005-11-03
US7833863B1 (en) 2010-11-16
US7361558B2 (en) 2008-04-22
TWI366249B (en) 2012-06-11
TW200524085A (en) 2005-07-16
WO2005057615A2 (en) 2005-06-23

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