JP2007502333A - 光起電アプリケーション用のシリコーンベース誘電被膜及びフィルム - Google Patents

光起電アプリケーション用のシリコーンベース誘電被膜及びフィルム Download PDF

Info

Publication number
JP2007502333A
JP2007502333A JP2006522551A JP2006522551A JP2007502333A JP 2007502333 A JP2007502333 A JP 2007502333A JP 2006522551 A JP2006522551 A JP 2006522551A JP 2006522551 A JP2006522551 A JP 2006522551A JP 2007502333 A JP2007502333 A JP 2007502333A
Authority
JP
Japan
Prior art keywords
group
formula
groups
substrate
silicone composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006522551A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007502333A5 (enExample
Inventor
カトリス,ディミトリス
通孝 須藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Publication of JP2007502333A publication Critical patent/JP2007502333A/ja
Publication of JP2007502333A5 publication Critical patent/JP2007502333A5/ja
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/30Coatings
    • H10F77/306Coatings for devices having potential barriers
    • H10F77/311Coatings for devices having potential barriers for photovoltaic cells
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04Polysiloxanes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04Polysiloxanes
    • C09D183/08Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/126Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/541CuInSe2 material PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/31504Composite [nonstructural laminate]
    • Y10T428/31652Of asbestos
    • Y10T428/31663As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
JP2006522551A 2003-08-01 2004-06-18 光起電アプリケーション用のシリコーンベース誘電被膜及びフィルム Pending JP2007502333A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49188303P 2003-08-01 2003-08-01
PCT/US2004/019609 WO2005017058A1 (en) 2003-08-01 2004-06-18 Silicone based dielectric coatings and films for photovoltaic applications

Publications (2)

Publication Number Publication Date
JP2007502333A true JP2007502333A (ja) 2007-02-08
JP2007502333A5 JP2007502333A5 (enExample) 2008-11-13

Family

ID=34193100

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006522551A Pending JP2007502333A (ja) 2003-08-01 2004-06-18 光起電アプリケーション用のシリコーンベース誘電被膜及びフィルム

Country Status (7)

Country Link
US (1) US20070111014A1 (enExample)
EP (1) EP1654334A1 (enExample)
JP (1) JP2007502333A (enExample)
KR (1) KR20060066080A (enExample)
CN (1) CN100582188C (enExample)
CA (1) CA2543366A1 (enExample)
WO (1) WO2005017058A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019157031A (ja) * 2018-03-15 2019-09-19 日鉄ケミカル&マテリアル株式会社 平坦化膜形成用塗布液およびその製造方法、平坦化膜付き金属箔コイルおよびその製造方法、並びにそれらに用いるシリカ微粒子含有ケトン系溶剤

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100273011A1 (en) * 1996-12-20 2010-10-28 Bianxiao Zhong Silicone Composition, Silicone Adhesive, Coated and Laminated Substrates
JP5219332B2 (ja) * 2005-09-20 2013-06-26 新日鉄住金マテリアルズ株式会社 被覆ステンレス箔及び薄膜太陽電池
US20070099005A1 (en) * 2005-10-31 2007-05-03 Honeywell International Inc. Thick crack-free silica film by colloidal silica incorporation
EP2016625B1 (en) * 2006-04-18 2009-09-02 Dow Corning Corporation Copper indium diselenide-based photovoltaic device and method of preparing the same
WO2007120905A2 (en) 2006-04-18 2007-10-25 Dow Corning Corporation Cadmium telluride-based photovoltaic device and method of preparing the same
ATE448569T1 (de) * 2006-04-18 2009-11-15 Dow Corning Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür
US8304085B2 (en) * 2006-04-18 2012-11-06 Dow Corning Corporation Metal foil substrates coated with condensation cured silicone resin compositions
US8207442B2 (en) 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
JP5541918B2 (ja) * 2006-05-22 2014-07-09 ナンヤン テクノロジカル ユニヴァーシティー 有機薄膜トランジスタ用の溶液プロセスにより作製される無機膜
WO2009007786A2 (en) * 2006-06-05 2009-01-15 Dow Corning Corporation A solar cell including a silicone resin layer
US20080012074A1 (en) * 2006-07-14 2008-01-17 Air Products And Chemicals, Inc. Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors
WO2008036769A2 (en) 2006-09-19 2008-03-27 Itn Energy Systems, Inc. Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices
WO2008079179A1 (en) 2006-12-20 2008-07-03 Dow Corning Corporation Glass substrates coated or laminated with cured silicone resin compositions
JP5091249B2 (ja) 2006-12-20 2012-12-05 ダウ・コーニング・コーポレイション 多層の硬化シリコーン樹脂組成物で被覆またはラミネートされたガラス基板
JP2011516626A (ja) * 2008-03-04 2011-05-26 ダウ・コーニング・コーポレイション シリコーン組成物、シリコーン接着剤、被覆基板及び積層基板
JP2011518893A (ja) * 2008-03-04 2011-06-30 ダウ・コーニング・コーポレイション ボロシロキサン組成物、ボロシロキサン接着剤、塗装基板及び積層基板
US20110045277A1 (en) * 2008-05-27 2011-02-24 Nathan Greer Adhesive Tape and Laminated Glass
TW201004795A (en) * 2008-07-31 2010-02-01 Dow Corning Laminated glass
JP4973783B2 (ja) * 2008-08-13 2012-07-11 富士通株式会社 フィルム貼着装置及びフィルム貼着方法及び電子ペーパの製造方法
US20100059385A1 (en) * 2008-09-06 2010-03-11 Delin Li Methods for fabricating thin film solar cells
JP5471180B2 (ja) * 2008-09-11 2014-04-16 信越化学工業株式会社 シリコーン積層基板、その製造方法、シリコーン積層基板製造用シリコーン樹脂組成物及びled装置
KR101138798B1 (ko) * 2008-12-29 2012-04-24 제일모직주식회사 신뢰성이 향상된 이방 전도성 필름용 조성물 및 이를 이용한 이방전도성 필름
US8557437B2 (en) * 2009-03-25 2013-10-15 Tdk Corporation Electrode comprising protective layer for lithium ion secondary battery and lithium ion secondary battery
US8419535B2 (en) * 2009-06-08 2013-04-16 Cfph, Llc Mobile playing card devices
US8784189B2 (en) * 2009-06-08 2014-07-22 Cfph, Llc Interprocess communication regarding movement of game devices
US8613671B2 (en) * 2009-06-08 2013-12-24 Cfph, Llc Data transfer and control among multiple computer devices in a gaming environment
US8287386B2 (en) * 2009-06-08 2012-10-16 Cfph, Llc Electrical transmission among interconnected gaming systems
US8545327B2 (en) * 2009-06-08 2013-10-01 Cfph, Llc Amusement device including means for processing electronic data in play of a game in which an outcome is dependant upon card values
US8771078B2 (en) 2009-06-08 2014-07-08 Cfph, Llc Amusement device including means for processing electronic data in play of a game of chance
US8545328B2 (en) * 2009-06-08 2013-10-01 Cfph, Llc Portable electronic charge device for card devices
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
DE102009042447A1 (de) * 2009-09-23 2011-04-07 Sasol Germany Gmbh Zusammensetzungen enthaltend Dialkylether, daraus hergestellte Beschichtungen und Verwendung von Dialkylethern
EP2328183A1 (de) * 2009-11-26 2011-06-01 Engineered Products Switzerland AG Substrat mit einer Metallfolie zur Herstellung von Photovoltaik-Zellen
KR101133061B1 (ko) * 2010-01-25 2012-04-04 주식회사 엘지화학 광전지용 시트
JP2014500897A (ja) 2010-11-09 2014-01-16 ダウ コーニング コーポレーション 有機リン酸化合物により可塑化されたヒドロシリル化硬化シリコーン樹脂
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US20150209654A1 (en) 2013-11-12 2015-07-30 Deq Systems Corp. Reconfigurable playing cards and game display devices
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
JP6203986B2 (ja) 2015-05-27 2017-09-27 京セラ株式会社 太陽電池素子およびその製造方法
JP2017120873A (ja) 2015-12-25 2017-07-06 京セラ株式会社 絶縁性ペーストおよびその製造方法並びに太陽電池素子の製造方法
CN107501942B (zh) * 2017-08-29 2020-10-02 北京康美特科技股份有限公司 可模塑成型的有机硅树脂、组合物及其半导体发光元件
CN109651614A (zh) * 2017-10-12 2019-04-19 弗洛里光电材料(苏州)有限公司 八硅倍半氧烷纳米杂化分子化合物及其应用
WO2020180837A1 (en) 2019-03-07 2020-09-10 Liquid X Printed Metals, Inc. Thermal cure dielectric ink
RO138402A2 (ro) * 2021-09-27 2024-09-30 Robert Bosch Gmbh Compoziţie compozită formatoare de (poli)silsesquioxan
DE102022205830A1 (de) * 2021-09-27 2023-03-30 Robert Bosch Gesellschaft mit beschränkter Haftung (Poly-)Silsesquioxan ausbildende Kompositzusammensetzung
US20250257239A1 (en) * 2024-02-08 2025-08-14 Honeywell International Inc. Polysiloxane compositions for optoelectronic device applications involving moisture sensitive layers

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5859222A (ja) * 1981-10-03 1983-04-08 Japan Synthetic Rubber Co Ltd オルガノポリシルセスキオキサン及びその製造方法
JPH08188649A (ja) * 1995-01-10 1996-07-23 Kansai Shin Gijutsu Kenkyusho:Kk ラダーポリシロキサンおよびその製造方法
JPH09232102A (ja) * 1996-02-13 1997-09-05 Dow Corning Sa 加熱部材およびその製造方法
JPH09330982A (ja) * 1996-03-30 1997-12-22 Samsung Electron Co Ltd 半導体装置の層間絶縁膜形成方法
JPH10237174A (ja) * 1997-02-24 1998-09-08 Dow Corning Asia Ltd シリル化ポリメチルシルセスキオキサン、その製造方法、それを用いた組成物
JP2000106363A (ja) * 1998-07-10 2000-04-11 Dow Corning Corp 不溶性コ―ティングの形成方法
JP2000349320A (ja) * 1999-06-08 2000-12-15 Kobe Steel Ltd 耐電圧特性に優れたAl合金製絶縁材料およびその製造方法
JP2001011646A (ja) * 1999-04-30 2001-01-16 Kawasaki Steel Corp 表面処理鋼板
JP2002097365A (ja) * 2000-09-25 2002-04-02 Nisshin Steel Co Ltd 薄膜多結晶シリコン太陽電池用絶縁基板及びその製造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2830968A (en) * 1955-05-27 1958-04-15 Dow Corning Organosilicon resins
DE3278567D1 (en) 1981-10-03 1988-07-07 Japan Synthetic Rubber Co Ltd Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same
US5043789A (en) 1990-03-15 1991-08-27 International Business Machines Corporation Planarizing silsesquioxane copolymer coating
JP2928341B2 (ja) 1990-07-03 1999-08-03 三菱電機株式会社 シリコーンラダー系樹脂塗布液組成物
US5063267A (en) * 1990-11-28 1991-11-05 Dow Corning Corporation Hydrogen silsesquioxane resin fractions and their use as coating materials
JP3183390B2 (ja) * 1995-09-05 2001-07-09 キヤノン株式会社 光電変換装置及びそれを用いた撮像装置
US5767014A (en) * 1996-10-28 1998-06-16 International Business Machines Corporation Integrated circuit and process for its manufacture
JP3543669B2 (ja) 1999-03-31 2004-07-14 信越化学工業株式会社 絶縁膜形成用塗布液及び絶縁膜の形成方法
US6310281B1 (en) * 2000-03-16 2001-10-30 Global Solar Energy, Inc. Thin-film, flexible photovoltaic module
US6646039B2 (en) * 2002-03-05 2003-11-11 Dow Corning Corporation Hydrosilyation cured silicone resin containing colloidal silica and a process for producing the same

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5859222A (ja) * 1981-10-03 1983-04-08 Japan Synthetic Rubber Co Ltd オルガノポリシルセスキオキサン及びその製造方法
JPH08188649A (ja) * 1995-01-10 1996-07-23 Kansai Shin Gijutsu Kenkyusho:Kk ラダーポリシロキサンおよびその製造方法
JPH09232102A (ja) * 1996-02-13 1997-09-05 Dow Corning Sa 加熱部材およびその製造方法
JPH09330982A (ja) * 1996-03-30 1997-12-22 Samsung Electron Co Ltd 半導体装置の層間絶縁膜形成方法
JPH10237174A (ja) * 1997-02-24 1998-09-08 Dow Corning Asia Ltd シリル化ポリメチルシルセスキオキサン、その製造方法、それを用いた組成物
JP2000106363A (ja) * 1998-07-10 2000-04-11 Dow Corning Corp 不溶性コ―ティングの形成方法
JP2001011646A (ja) * 1999-04-30 2001-01-16 Kawasaki Steel Corp 表面処理鋼板
JP2000349320A (ja) * 1999-06-08 2000-12-15 Kobe Steel Ltd 耐電圧特性に優れたAl合金製絶縁材料およびその製造方法
JP2002097365A (ja) * 2000-09-25 2002-04-02 Nisshin Steel Co Ltd 薄膜多結晶シリコン太陽電池用絶縁基板及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019157031A (ja) * 2018-03-15 2019-09-19 日鉄ケミカル&マテリアル株式会社 平坦化膜形成用塗布液およびその製造方法、平坦化膜付き金属箔コイルおよびその製造方法、並びにそれらに用いるシリカ微粒子含有ケトン系溶剤
JP7048367B2 (ja) 2018-03-15 2022-04-05 日鉄ケミカル&マテリアル株式会社 平坦化膜形成用塗布液およびその製造方法、平坦化膜付き金属箔コイルおよびその製造方法、並びにそれらに用いるシリカ微粒子含有ケトン系溶剤

Also Published As

Publication number Publication date
KR20060066080A (ko) 2006-06-15
CA2543366A1 (en) 2005-02-24
CN100582188C (zh) 2010-01-20
EP1654334A1 (en) 2006-05-10
WO2005017058A1 (en) 2005-02-24
US20070111014A1 (en) 2007-05-17
CN1863882A (zh) 2006-11-15

Similar Documents

Publication Publication Date Title
JP2007502333A (ja) 光起電アプリケーション用のシリコーンベース誘電被膜及びフィルム
EP1150346B1 (en) A process for preparing insulating material having low dielectric constant
US5853808A (en) Method of using siloxane polymers
EP2195398B1 (en) Method of forming a ceramic silicon oxide type coating, method of producing an inorganic base material, agent for forming a ceramic silicon oxide type coating, and semiconductor device
WO1998047945A1 (en) Organohydridosiloxane resins with low organic content
EP2350198A1 (en) A silicone composition and a method for preparing the same
CN1297578A (zh) 硅氧化膜的形成方法
JP2010518234A (ja) ヘテロ元素を含むシロキサン化合物およびポリマー
CN1326912C (zh) 有机硅酸盐聚合体和含有该有机硅酸盐聚合体的绝缘膜
JP2017509471A (ja) 反射防止に有用なシロキサンナノ粒子コーティング
CN104919598A (zh) 一种钝化用于光伏设备的硅基板的方法
WO2005114707A2 (en) Materials suitable for shallow trench isolation
WO2014115742A1 (ja) シリコーンを含む硬化性組成物およびその硬化物
Rathnayake et al. Polysilsesquioxane-based organic-inorganic hybrid nanomaterials and their applications towards organic photovoltaics
US20130217236A1 (en) Semiconductor device, method for producing the semiconductor device, substrate for semiconductor element and method for producing the substrate
CN102646724A (zh) 硒化铟铜基光伏器件及其制造方法
CN104919568A (zh) 一种改良n型硅基板的方法
JP4411067B2 (ja) シロキサン樹脂
CA2269952A1 (en) Stable solutions of a silsesquioxane or siloxane resin and a silicone solvent
KR20160122056A (ko) 광전자 용도를 위한 폴리실록산 제제 및 코팅
TWI785070B (zh) 聚矽氧樹脂、相關方法、以及由其形成的膜
CN101473447B (zh) 硒化铟铜基光伏器件及其制造方法
JP2001253945A (ja) 半導体層間絶縁材料及びこれを用いた半導体素子

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080926

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090521

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090526

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20090825

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20090901

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090925

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20100527

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20100827

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20100903

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20100924

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20101130