WO2005017058A1 - Silicone based dielectric coatings and films for photovoltaic applications - Google Patents

Silicone based dielectric coatings and films for photovoltaic applications Download PDF

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Publication number
WO2005017058A1
WO2005017058A1 PCT/US2004/019609 US2004019609W WO2005017058A1 WO 2005017058 A1 WO2005017058 A1 WO 2005017058A1 US 2004019609 W US2004019609 W US 2004019609W WO 2005017058 A1 WO2005017058 A1 WO 2005017058A1
Authority
WO
WIPO (PCT)
Prior art keywords
groups
group
dielectric coating
formula
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2004/019609
Other languages
English (en)
French (fr)
Inventor
Dimitris Katsoulis
Michitaka Suto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dow Silicones Corp
Original Assignee
Dow Corning Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Corning Corp filed Critical Dow Corning Corp
Priority to JP2006522551A priority Critical patent/JP2007502333A/ja
Priority to CA 2543366 priority patent/CA2543366A1/en
Priority to EP20040755651 priority patent/EP1654334A1/en
Priority to US10/566,788 priority patent/US20070111014A1/en
Publication of WO2005017058A1 publication Critical patent/WO2005017058A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Definitions

  • the reinforcing fillers are surface treated to increase the compatibility and interfacial adhesion with the siloxane resin matrix.
  • the hydroxyl groups on the surface of the colloidal silica particles may be treated with organylsilyl groups by reacting with appropriate silanes or siloxanes under acidic or basic consitions.
  • Suitable reactive silanes or siloxanes can include functionalities such as: vinyl, hydride, allyl, aryl or other unsaturated groups.
  • Particularly preferred siloxanes for use as a surface coating include hexamethyldisiloxane and tetramethyldivinyldisiloxane among others.
  • Suitable alkyl groups include methyl, ethyl, isopropyl, n-butyl, and isobutyl groups.
  • Suitable aryl groups include phenyl groups.
  • Suitable silsesquioxane copolymers are exemplified by (PhSiO 3 / 2 ). 75 (ViMe 2 SiO ⁇ / 2 ).2 5 , where Ph is a phenyl group, Vi represents a vinyl group, and Me represents a methyl group.
  • the silsesquioxane copolymer may be cross-linked with a silicon hydride containing hydrocarbon having the general formula H a R SiR 2 Si R 1 .
  • the dielectric coating comprises a phenyl - methyl siloxane resin composition prepared by cohydrolysis of the corresponding chlorosilanes followed by bodying with or without zinc octoate.
  • phenyl-methyl siloxane compounds and methods of forming them are disclosed in US Patent No. 2,830,968 which is hereby incorporated by reference.
  • the dielectric coatings can be prepared using various common coating processes. These can be batch process or continuous process. A common laboratory batch process is the draw method, using various size laboratory rods to produce coatings of predetermine thickness. A common continuous coating process is the gravure roll method. Examples [0035] The following examples are intended to illustrate the invention to those skilled in the art and should not be interpreted as limiting the scope of the invention as set forth in the appended claims. [0036] Example 1

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
PCT/US2004/019609 2003-08-01 2004-06-18 Silicone based dielectric coatings and films for photovoltaic applications Ceased WO2005017058A1 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006522551A JP2007502333A (ja) 2003-08-01 2004-06-18 光起電アプリケーション用のシリコーンベース誘電被膜及びフィルム
CA 2543366 CA2543366A1 (en) 2003-08-01 2004-06-18 Silicone based dielectric coatings and films for photovoltaic applications
EP20040755651 EP1654334A1 (en) 2003-08-01 2004-06-18 Silicone based dielectric coatings and films for photovoltaic applications
US10/566,788 US20070111014A1 (en) 2003-08-01 2004-06-18 Silicone based dielectric coatings and films for photovoltaic applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49188303P 2003-08-01 2003-08-01
US60/491,883 2003-08-01

Publications (1)

Publication Number Publication Date
WO2005017058A1 true WO2005017058A1 (en) 2005-02-24

Family

ID=34193100

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2004/019609 Ceased WO2005017058A1 (en) 2003-08-01 2004-06-18 Silicone based dielectric coatings and films for photovoltaic applications

Country Status (7)

Country Link
US (1) US20070111014A1 (enExample)
EP (1) EP1654334A1 (enExample)
JP (1) JP2007502333A (enExample)
KR (1) KR20060066080A (enExample)
CN (1) CN100582188C (enExample)
CA (1) CA2543366A1 (enExample)
WO (1) WO2005017058A1 (enExample)

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Publication number Priority date Publication date Assignee Title
JP2007088044A (ja) * 2005-09-20 2007-04-05 Nippon Steel Materials Co Ltd 被覆ステンレス箔及び薄膜太陽電池
WO2007053407A3 (en) * 2005-10-31 2007-07-26 Honeywell Int Inc Thick crack-free silica film by colloidal silica incorporation
WO2007120905A2 (en) 2006-04-18 2007-10-25 Dow Corning Corporation Cadmium telluride-based photovoltaic device and method of preparing the same
WO2007123926A3 (en) * 2006-04-18 2008-01-03 Dow Corning Metal foil substrates coated with condensation cured silicon resin compositions
WO2008088407A1 (en) * 2006-12-20 2008-07-24 Dow Corning Corporation Glass substrates coated or laminated with multiple layers of cured silicone resin compositions
EP1879234A3 (en) * 2006-07-14 2009-01-28 Air Products and Chemicals, Inc. Low temperature sol-gel silicates as dielectrics or planarization layers for thin film transistors
JP2009534839A (ja) * 2006-04-18 2009-09-24 ダウ・コーニング・コーポレイション 銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法
JP2009534841A (ja) * 2006-04-18 2009-09-24 ダウ・コーニング・コーポレイション 銅インジウム二セレン化物をベースとする光起電デバイスおよびそれを作製する方法
JP2009538526A (ja) * 2006-05-22 2009-11-05 ナンヤン テクノロジカル ユニヴァーシティー 有機薄膜トランジスタ用の溶液プロセスにより作製される無機膜
WO2009007786A3 (en) * 2006-06-05 2009-11-12 Dow Corning Corporation A solar cell including a silicone resin layer
EP2328183A1 (de) * 2009-11-26 2011-06-01 Engineered Products Switzerland AG Substrat mit einer Metallfolie zur Herstellung von Photovoltaik-Zellen
US8124870B2 (en) 2006-09-19 2012-02-28 Itn Energy System, Inc. Systems and processes for bifacial collection and tandem junctions using a thin-film photovoltaic device
US8207442B2 (en) 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
US8277939B2 (en) 2006-12-20 2012-10-02 Dow Corning Corporation Glass substrates coated or laminated with cured silicone resin compositions

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US20110045277A1 (en) * 2008-05-27 2011-02-24 Nathan Greer Adhesive Tape and Laminated Glass
TW201004795A (en) * 2008-07-31 2010-02-01 Dow Corning Laminated glass
JP4973783B2 (ja) * 2008-08-13 2012-07-11 富士通株式会社 フィルム貼着装置及びフィルム貼着方法及び電子ペーパの製造方法
US20100059385A1 (en) * 2008-09-06 2010-03-11 Delin Li Methods for fabricating thin film solar cells
JP5471180B2 (ja) * 2008-09-11 2014-04-16 信越化学工業株式会社 シリコーン積層基板、その製造方法、シリコーン積層基板製造用シリコーン樹脂組成物及びｌｅｄ装置
KR101138798B1 (ko) * 2008-12-29 2012-04-24 제일모직주식회사 신뢰성이 향상된 이방 전도성 필름용 조성물 및 이를 이용한 이방전도성 필름
US8557437B2 (en) * 2009-03-25 2013-10-15 Tdk Corporation Electrode comprising protective layer for lithium ion secondary battery and lithium ion secondary battery
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US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
DE102009042447A1 (de) * 2009-09-23 2011-04-07 Sasol Germany Gmbh Zusammensetzungen enthaltend Dialkylether, daraus hergestellte Beschichtungen und Verwendung von Dialkylethern
KR101133061B1 (ko) * 2010-01-25 2012-04-04 주식회사 엘지화학 광전지용 시트
JP2014500897A (ja) 2010-11-09 2014-01-16 ダウ コーニング コーポレーション 有機リン酸化合物により可塑化されたヒドロシリル化硬化シリコーン樹脂
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US20150209654A1 (en) 2013-11-12 2015-07-30 Deq Systems Corp. Reconfigurable playing cards and game display devices
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
JP6203986B2 (ja) 2015-05-27 2017-09-27 京セラ株式会社 太陽電池素子およびその製造方法
JP2017120873A (ja) 2015-12-25 2017-07-06 京セラ株式会社 絶縁性ペーストおよびその製造方法並びに太陽電池素子の製造方法
CN107501942B (zh) * 2017-08-29 2020-10-02 北京康美特科技股份有限公司 可模塑成型的有机硅树脂、组合物及其半导体发光元件
CN109651614A (zh) * 2017-10-12 2019-04-19 弗洛里光电材料（苏州）有限公司 八硅倍半氧烷纳米杂化分子化合物及其应用
JP7048367B2 (ja) * 2018-03-15 2022-04-05 日鉄ケミカル＆マテリアル株式会社 平坦化膜形成用塗布液およびその製造方法、平坦化膜付き金属箔コイルおよびその製造方法、並びにそれらに用いるシリカ微粒子含有ケトン系溶剤
WO2020180837A1 (en) 2019-03-07 2020-09-10 Liquid X Printed Metals, Inc. Thermal cure dielectric ink
RO138402A2 (ro) * 2021-09-27 2024-09-30 Robert Bosch Gmbh Compoziţie compozită formatoare de (poli)silsesquioxan
DE102022205830A1 (de) * 2021-09-27 2023-03-30 Robert Bosch Gesellschaft mit beschränkter Haftung (Poly-)Silsesquioxan ausbildende Kompositzusammensetzung
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Publication number Priority date Publication date Assignee Title
JP2007088044A (ja) * 2005-09-20 2007-04-05 Nippon Steel Materials Co Ltd 被覆ステンレス箔及び薄膜太陽電池
WO2007053407A3 (en) * 2005-10-31 2007-07-26 Honeywell Int Inc Thick crack-free silica film by colloidal silica incorporation
JP2012069965A (ja) * 2006-04-18 2012-04-05 Dow Corning Corp 銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法
WO2007120905A2 (en) 2006-04-18 2007-10-25 Dow Corning Corporation Cadmium telluride-based photovoltaic device and method of preparing the same
WO2007120905A3 (en) * 2006-04-18 2008-04-17 Dow Corning Cadmium telluride-based photovoltaic device and method of preparing the same
US8304085B2 (en) * 2006-04-18 2012-11-06 Dow Corning Corporation Metal foil substrates coated with condensation cured silicone resin compositions
CN102646724A (zh) * 2006-04-18 2012-08-22 道康宁公司 硒化铟铜基光伏器件及其制造方法
JP2009534221A (ja) * 2006-04-18 2009-09-24 ダウ・コーニング・コーポレイション 縮合硬化シリコーン樹脂組成物でコーティングされた金属箔基板
JP2009534839A (ja) * 2006-04-18 2009-09-24 ダウ・コーニング・コーポレイション 銅インジウム二セレン化物をベースとする光起電デバイス及びその光起電デバイスを作製する方法
JP2009534840A (ja) * 2006-04-18 2009-09-24 ダウ・コーニング・コーポレイション テルル化カドミウムベース光起電力デバイスおよびその調製方法
JP2009534841A (ja) * 2006-04-18 2009-09-24 ダウ・コーニング・コーポレイション 銅インジウム二セレン化物をベースとする光起電デバイスおよびそれを作製する方法
US8207442B2 (en) 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
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CA2543366A1 (en) 2005-02-24
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EP1654334A1 (en) 2006-05-10
US20070111014A1 (en) 2007-05-17
CN1863882A (zh) 2006-11-15

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