CA2543366A1 - Silicone based dielectric coatings and films for photovoltaic applications - Google Patents
Silicone based dielectric coatings and films for photovoltaic applications Download PDFInfo
- Publication number
- CA2543366A1 CA2543366A1 CA 2543366 CA2543366A CA2543366A1 CA 2543366 A1 CA2543366 A1 CA 2543366A1 CA 2543366 CA2543366 CA 2543366 CA 2543366 A CA2543366 A CA 2543366A CA 2543366 A1 CA2543366 A1 CA 2543366A1
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- group
- dielectric coating
- formula
- substrate
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- 238000000576 coating method Methods 0.000 title claims abstract description 73
- 229920001296 polysiloxane Polymers 0.000 title claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 65
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000000203 mixture Substances 0.000 claims abstract description 28
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 19
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 17
- 125000003118 aryl group Chemical group 0.000 claims abstract description 17
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims abstract description 13
- 125000003282 alkyl amino group Chemical group 0.000 claims abstract description 9
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 8
- 239000004020 conductor Substances 0.000 claims abstract description 6
- -1 hydrido, hydroxyl Chemical group 0.000 claims description 17
- 229920003217 poly(methylsilsesquioxane) Polymers 0.000 claims description 16
- 150000001875 compounds Chemical class 0.000 claims description 11
- 229920001577 copolymer Polymers 0.000 claims description 10
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 6
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 5
- 229920000734 polysilsesquioxane polymer Polymers 0.000 claims description 5
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims description 4
- 125000000524 functional group Chemical group 0.000 claims description 4
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 4
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 4
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 claims description 4
- 229920002554 vinyl polymer Polymers 0.000 claims description 4
- 125000001931 aliphatic group Chemical group 0.000 claims description 3
- 125000003342 alkenyl group Chemical group 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000005372 silanol group Chemical group 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 8
- 125000001145 hydrido group Chemical group *[H] 0.000 abstract description 5
- 150000005215 alkyl ethers Chemical class 0.000 abstract description 3
- 150000008378 aryl ethers Chemical class 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 24
- 239000003960 organic solvent Substances 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 17
- 238000005516 engineering process Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 15
- 239000000243 solution Substances 0.000 description 15
- 239000002904 solvent Substances 0.000 description 15
- 150000002430 hydrocarbons Chemical class 0.000 description 14
- 239000000463 material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 14
- 238000000151 deposition Methods 0.000 description 13
- 230000008021 deposition Effects 0.000 description 12
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 229910001220 stainless steel Inorganic materials 0.000 description 10
- 239000010935 stainless steel Substances 0.000 description 10
- 239000010409 thin film Substances 0.000 description 10
- 238000006460 hydrolysis reaction Methods 0.000 description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 239000004215 Carbon black (E152) Substances 0.000 description 8
- 229930195733 hydrocarbon Natural products 0.000 description 8
- 230000007062 hydrolysis Effects 0.000 description 8
- 229920000642 polymer Polymers 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 8
- 238000009833 condensation Methods 0.000 description 7
- 239000012071 phase Substances 0.000 description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 239000002253 acid Substances 0.000 description 6
- 238000004630 atomic force microscopy Methods 0.000 description 6
- 239000008119 colloidal silica Substances 0.000 description 6
- 230000005494 condensation Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 150000004756 silanes Chemical class 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 230000003746 surface roughness Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000003139 buffering effect Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 150000007529 inorganic bases Chemical class 0.000 description 5
- 238000001314 profilometry Methods 0.000 description 5
- 150000003839 salts Chemical class 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 4
- 239000004971 Cross linker Substances 0.000 description 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000005046 Chlorosilane Substances 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- 239000008346 aqueous phase Substances 0.000 description 3
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical compound Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 125000005843 halogen group Chemical group 0.000 description 3
- PQPVPZTVJLXQAS-UHFFFAOYSA-N hydroxy-methyl-phenylsilicon Chemical compound C[Si](O)C1=CC=CC=C1 PQPVPZTVJLXQAS-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000000399 optical microscopy Methods 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 238000006884 silylation reaction Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- KSBAEPSJVUENNK-UHFFFAOYSA-L tin(ii) 2-ethylhexanoate Chemical compound [Sn+2].CCCCC(CC)C([O-])=O.CCCCC(CC)C([O-])=O KSBAEPSJVUENNK-UHFFFAOYSA-L 0.000 description 3
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 2
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 2
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- 150000001343 alkyl silanes Chemical class 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000003759 ester based solvent Substances 0.000 description 2
- 239000004210 ether based solvent Substances 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000005453 ketone based solvent Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- FDPIMTJIUBPUKL-UHFFFAOYSA-N pentan-3-one Chemical compound CCC(=O)CC FDPIMTJIUBPUKL-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000012763 reinforcing filler Substances 0.000 description 2
- 239000011342 resin composition Substances 0.000 description 2
- 229910052990 silicon hydride Inorganic materials 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 239000005052 trichlorosilane Substances 0.000 description 2
- 239000008096 xylene Substances 0.000 description 2
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical compound [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 2
- UHXCHUWSQRLZJS-UHFFFAOYSA-N (4-dimethylsilylidenecyclohexa-2,5-dien-1-ylidene)-dimethylsilane Chemical compound C[Si](C)C1=CC=C([Si](C)C)C=C1 UHXCHUWSQRLZJS-UHFFFAOYSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- HFZLSTDPRQSZCQ-UHFFFAOYSA-N 1-pyrrolidin-3-ylpyrrolidine Chemical compound C1CCCN1C1CNCC1 HFZLSTDPRQSZCQ-UHFFFAOYSA-N 0.000 description 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical class OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- YTEISYFNYGDBRV-UHFFFAOYSA-N [(dimethyl-$l^{3}-silanyl)oxy-dimethylsilyl]oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)(C)O[Si](C)C YTEISYFNYGDBRV-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910021538 borax Inorganic materials 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- FJKDYKNQNJQEFZ-UHFFFAOYSA-N butyl(triethoxy)silane trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC.CCCC[Si](OCC)(OCC)OCC FJKDYKNQNJQEFZ-UHFFFAOYSA-N 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- VTYYLEPIZMXCLO-UHFFFAOYSA-L calcium carbonate Substances [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 1
- 235000010216 calcium carbonate Nutrition 0.000 description 1
- 235000011116 calcium hydroxide Nutrition 0.000 description 1
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000006482 condensation reaction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- ZZEMEJKDTZOXOI-UHFFFAOYSA-N digallium;selenium(2-) Chemical compound [Ga+3].[Ga+3].[Se-2].[Se-2].[Se-2] ZZEMEJKDTZOXOI-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- VDCSGNNYCFPWFK-UHFFFAOYSA-N diphenylsilane Chemical compound C=1C=CC=CC=1[SiH2]C1=CC=CC=C1 VDCSGNNYCFPWFK-UHFFFAOYSA-N 0.000 description 1
- POLCUAVZOMRGSN-UHFFFAOYSA-N dipropyl ether Chemical compound CCCOCCC POLCUAVZOMRGSN-UHFFFAOYSA-N 0.000 description 1
- BNIILDVGGAEEIG-UHFFFAOYSA-L disodium hydrogen phosphate Chemical compound [Na+].[Na+].OP([O-])([O-])=O BNIILDVGGAEEIG-UHFFFAOYSA-L 0.000 description 1
- UQGFMSUEHSUPRD-UHFFFAOYSA-N disodium;3,7-dioxido-2,4,6,8,9-pentaoxa-1,3,5,7-tetraborabicyclo[3.3.1]nonane Chemical compound [Na+].[Na+].O1B([O-])OB2OB([O-])OB1O2 UQGFMSUEHSUPRD-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- BITPLIXHRASDQB-UHFFFAOYSA-N ethenyl-[ethenyl(dimethyl)silyl]oxy-dimethylsilane Chemical compound C=C[Si](C)(C)O[Si](C)(C)C=C BITPLIXHRASDQB-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000005194 fractionation Methods 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 229920006158 high molecular weight polymer Polymers 0.000 description 1
- 239000012456 homogeneous solution Substances 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910000039 hydrogen halide Inorganic materials 0.000 description 1
- 239000012433 hydrogen halide Substances 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052909 inorganic silicate Inorganic materials 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical class [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 235000011160 magnesium carbonates Nutrition 0.000 description 1
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical class [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 1
- 235000012254 magnesium hydroxide Nutrition 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000005055 methyl trichlorosilane Substances 0.000 description 1
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000402 monopotassium phosphate Inorganic materials 0.000 description 1
- 235000019796 monopotassium phosphate Nutrition 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 125000001181 organosilyl group Chemical group [SiH3]* 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- PJNZPQUBCPKICU-UHFFFAOYSA-N phosphoric acid;potassium Chemical compound [K].OP(O)(O)=O PJNZPQUBCPKICU-UHFFFAOYSA-N 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Substances [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 1
- 235000011181 potassium carbonates Nutrition 0.000 description 1
- IWZKICVEHNUQTL-UHFFFAOYSA-M potassium hydrogen phthalate Chemical compound [K+].OC(=O)C1=CC=CC=C1C([O-])=O IWZKICVEHNUQTL-UHFFFAOYSA-M 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical class [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000012744 reinforcing agent Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 1
- 150000004819 silanols Chemical class 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 235000017557 sodium bicarbonate Nutrition 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- 235000011182 sodium carbonates Nutrition 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
- 239000004328 sodium tetraborate Substances 0.000 description 1
- 235000010339 sodium tetraborate Nutrition 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31652—Of asbestos
- Y10T428/31663—As siloxane, silicone or silane
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Paints Or Removers (AREA)
- Silicon Polymers (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US49188303P | 2003-08-01 | 2003-08-01 | |
| US60/491,883 | 2003-08-01 | ||
| PCT/US2004/019609 WO2005017058A1 (en) | 2003-08-01 | 2004-06-18 | Silicone based dielectric coatings and films for photovoltaic applications |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA2543366A1 true CA2543366A1 (en) | 2005-02-24 |
Family
ID=34193100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA 2543366 Abandoned CA2543366A1 (en) | 2003-08-01 | 2004-06-18 | Silicone based dielectric coatings and films for photovoltaic applications |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20070111014A1 (enExample) |
| EP (1) | EP1654334A1 (enExample) |
| JP (1) | JP2007502333A (enExample) |
| KR (1) | KR20060066080A (enExample) |
| CN (1) | CN100582188C (enExample) |
| CA (1) | CA2543366A1 (enExample) |
| WO (1) | WO2005017058A1 (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US20100273011A1 (en) * | 1996-12-20 | 2010-10-28 | Bianxiao Zhong | Silicone Composition, Silicone Adhesive, Coated and Laminated Substrates |
| JP5219332B2 (ja) * | 2005-09-20 | 2013-06-26 | 新日鉄住金マテリアルズ株式会社 | 被覆ステンレス箔及び薄膜太陽電池 |
| US20070099005A1 (en) * | 2005-10-31 | 2007-05-03 | Honeywell International Inc. | Thick crack-free silica film by colloidal silica incorporation |
| EP2016625B1 (en) * | 2006-04-18 | 2009-09-02 | Dow Corning Corporation | Copper indium diselenide-based photovoltaic device and method of preparing the same |
| WO2007120905A2 (en) | 2006-04-18 | 2007-10-25 | Dow Corning Corporation | Cadmium telluride-based photovoltaic device and method of preparing the same |
| ATE448569T1 (de) * | 2006-04-18 | 2009-11-15 | Dow Corning | Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür |
| US8304085B2 (en) * | 2006-04-18 | 2012-11-06 | Dow Corning Corporation | Metal foil substrates coated with condensation cured silicone resin compositions |
| US8207442B2 (en) | 2006-04-18 | 2012-06-26 | Itn Energy Systems, Inc. | Reinforcing structures for thin-film photovoltaic device substrates, and associated methods |
| JP5541918B2 (ja) * | 2006-05-22 | 2014-07-09 | ナンヤン テクノロジカル ユニヴァーシティー | 有機薄膜トランジスタ用の溶液プロセスにより作製される無機膜 |
| WO2009007786A2 (en) * | 2006-06-05 | 2009-01-15 | Dow Corning Corporation | A solar cell including a silicone resin layer |
| US20080012074A1 (en) * | 2006-07-14 | 2008-01-17 | Air Products And Chemicals, Inc. | Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors |
| WO2008036769A2 (en) | 2006-09-19 | 2008-03-27 | Itn Energy Systems, Inc. | Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices |
| WO2008079179A1 (en) | 2006-12-20 | 2008-07-03 | Dow Corning Corporation | Glass substrates coated or laminated with cured silicone resin compositions |
| JP5091249B2 (ja) | 2006-12-20 | 2012-12-05 | ダウ・コーニング・コーポレイション | 多層の硬化シリコーン樹脂組成物で被覆またはラミネートされたガラス基板 |
| JP2011516626A (ja) * | 2008-03-04 | 2011-05-26 | ダウ・コーニング・コーポレイション | シリコーン組成物、シリコーン接着剤、被覆基板及び積層基板 |
| JP2011518893A (ja) * | 2008-03-04 | 2011-06-30 | ダウ・コーニング・コーポレイション | ボロシロキサン組成物、ボロシロキサン接着剤、塗装基板及び積層基板 |
| US20110045277A1 (en) * | 2008-05-27 | 2011-02-24 | Nathan Greer | Adhesive Tape and Laminated Glass |
| TW201004795A (en) * | 2008-07-31 | 2010-02-01 | Dow Corning | Laminated glass |
| JP4973783B2 (ja) * | 2008-08-13 | 2012-07-11 | 富士通株式会社 | フィルム貼着装置及びフィルム貼着方法及び電子ペーパの製造方法 |
| US20100059385A1 (en) * | 2008-09-06 | 2010-03-11 | Delin Li | Methods for fabricating thin film solar cells |
| JP5471180B2 (ja) * | 2008-09-11 | 2014-04-16 | 信越化学工業株式会社 | シリコーン積層基板、その製造方法、シリコーン積層基板製造用シリコーン樹脂組成物及びｌｅｄ装置 |
| KR101138798B1 (ko) * | 2008-12-29 | 2012-04-24 | 제일모직주식회사 | 신뢰성이 향상된 이방 전도성 필름용 조성물 및 이를 이용한 이방전도성 필름 |
| US8557437B2 (en) * | 2009-03-25 | 2013-10-15 | Tdk Corporation | Electrode comprising protective layer for lithium ion secondary battery and lithium ion secondary battery |
| US8419535B2 (en) * | 2009-06-08 | 2013-04-16 | Cfph, Llc | Mobile playing card devices |
| US8784189B2 (en) * | 2009-06-08 | 2014-07-22 | Cfph, Llc | Interprocess communication regarding movement of game devices |
| US8613671B2 (en) * | 2009-06-08 | 2013-12-24 | Cfph, Llc | Data transfer and control among multiple computer devices in a gaming environment |
| US8287386B2 (en) * | 2009-06-08 | 2012-10-16 | Cfph, Llc | Electrical transmission among interconnected gaming systems |
| US8545327B2 (en) * | 2009-06-08 | 2013-10-01 | Cfph, Llc | Amusement device including means for processing electronic data in play of a game in which an outcome is dependant upon card values |
| US8771078B2 (en) | 2009-06-08 | 2014-07-08 | Cfph, Llc | Amusement device including means for processing electronic data in play of a game of chance |
| US8545328B2 (en) * | 2009-06-08 | 2013-10-01 | Cfph, Llc | Portable electronic charge device for card devices |
| US8557877B2 (en) | 2009-06-10 | 2013-10-15 | Honeywell International Inc. | Anti-reflective coatings for optically transparent substrates |
| DE102009042447A1 (de) * | 2009-09-23 | 2011-04-07 | Sasol Germany Gmbh | Zusammensetzungen enthaltend Dialkylether, daraus hergestellte Beschichtungen und Verwendung von Dialkylethern |
| EP2328183A1 (de) * | 2009-11-26 | 2011-06-01 | Engineered Products Switzerland AG | Substrat mit einer Metallfolie zur Herstellung von Photovoltaik-Zellen |
| KR101133061B1 (ko) * | 2010-01-25 | 2012-04-04 | 주식회사 엘지화학 | 광전지용 시트 |
| JP2014500897A (ja) | 2010-11-09 | 2014-01-16 | ダウ コーニング コーポレーション | 有機リン酸化合物により可塑化されたヒドロシリル化硬化シリコーン樹脂 |
| US8864898B2 (en) | 2011-05-31 | 2014-10-21 | Honeywell International Inc. | Coating formulations for optical elements |
| US20150209654A1 (en) | 2013-11-12 | 2015-07-30 | Deq Systems Corp. | Reconfigurable playing cards and game display devices |
| US10544329B2 (en) | 2015-04-13 | 2020-01-28 | Honeywell International Inc. | Polysiloxane formulations and coatings for optoelectronic applications |
| JP6203986B2 (ja) | 2015-05-27 | 2017-09-27 | 京セラ株式会社 | 太陽電池素子およびその製造方法 |
| JP2017120873A (ja) | 2015-12-25 | 2017-07-06 | 京セラ株式会社 | 絶縁性ペーストおよびその製造方法並びに太陽電池素子の製造方法 |
| CN107501942B (zh) * | 2017-08-29 | 2020-10-02 | 北京康美特科技股份有限公司 | 可模塑成型的有机硅树脂、组合物及其半导体发光元件 |
| CN109651614A (zh) * | 2017-10-12 | 2019-04-19 | 弗洛里光电材料（苏州）有限公司 | 八硅倍半氧烷纳米杂化分子化合物及其应用 |
| JP7048367B2 (ja) * | 2018-03-15 | 2022-04-05 | 日鉄ケミカル＆マテリアル株式会社 | 平坦化膜形成用塗布液およびその製造方法、平坦化膜付き金属箔コイルおよびその製造方法、並びにそれらに用いるシリカ微粒子含有ケトン系溶剤 |
| WO2020180837A1 (en) | 2019-03-07 | 2020-09-10 | Liquid X Printed Metals, Inc. | Thermal cure dielectric ink |
| RO138402A2 (ro) * | 2021-09-27 | 2024-09-30 | Robert Bosch Gmbh | Compoziţie compozită formatoare de (poli)silsesquioxan |
| DE102022205830A1 (de) * | 2021-09-27 | 2023-03-30 | Robert Bosch Gesellschaft mit beschränkter Haftung | (Poly-)Silsesquioxan ausbildende Kompositzusammensetzung |
| US20250257239A1 (en) * | 2024-02-08 | 2025-08-14 | Honeywell International Inc. | Polysiloxane compositions for optoelectronic device applications involving moisture sensitive layers |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US2830968A (en) * | 1955-05-27 | 1958-04-15 | Dow Corning | Organosilicon resins |
| JPS5859222A (ja) * | 1981-10-03 | 1983-04-08 | Japan Synthetic Rubber Co Ltd | オルガノポリシルセスキオキサン及びその製造方法 |
| DE3278567D1 (en) | 1981-10-03 | 1988-07-07 | Japan Synthetic Rubber Co Ltd | Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same |
| US5043789A (en) | 1990-03-15 | 1991-08-27 | International Business Machines Corporation | Planarizing silsesquioxane copolymer coating |
| JP2928341B2 (ja) | 1990-07-03 | 1999-08-03 | 三菱電機株式会社 | シリコーンラダー系樹脂塗布液組成物 |
| US5063267A (en) * | 1990-11-28 | 1991-11-05 | Dow Corning Corporation | Hydrogen silsesquioxane resin fractions and their use as coating materials |
| JPH08188649A (ja) * | 1995-01-10 | 1996-07-23 | Kansai Shin Gijutsu Kenkyusho:Kk | ラダーポリシロキサンおよびその製造方法 |
| JP3183390B2 (ja) * | 1995-09-05 | 2001-07-09 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像装置 |
| GB9602873D0 (en) * | 1996-02-13 | 1996-04-10 | Dow Corning Sa | Heating elements and process for manufacture thereof |
| KR100255659B1 (ko) * | 1996-03-30 | 2000-05-01 | 윤종용 | 반도체 장치의 sog층 처리 방법 |
| US5767014A (en) * | 1996-10-28 | 1998-06-16 | International Business Machines Corporation | Integrated circuit and process for its manufacture |
| JP3635180B2 (ja) * | 1997-02-24 | 2005-04-06 | ダウ コーニング アジア株式会社 | シリル化ポリメチルシルセスキオキサン、その製造方法、それを用いた組成物 |
| US5906859A (en) * | 1998-07-10 | 1999-05-25 | Dow Corning Corporation | Method for producing low dielectric coatings from hydrogen silsequioxane resin |
| JP3543669B2 (ja) | 1999-03-31 | 2004-07-14 | 信越化学工業株式会社 | 絶縁膜形成用塗布液及び絶縁膜の形成方法 |
| JP2001011646A (ja) * | 1999-04-30 | 2001-01-16 | Kawasaki Steel Corp | 表面処理鋼板 |
| JP2000349320A (ja) * | 1999-06-08 | 2000-12-15 | Kobe Steel Ltd | 耐電圧特性に優れたＡｌ合金製絶縁材料およびその製造方法 |
| US6310281B1 (en) * | 2000-03-16 | 2001-10-30 | Global Solar Energy, Inc. | Thin-film, flexible photovoltaic module |
| JP2002097365A (ja) * | 2000-09-25 | 2002-04-02 | Nisshin Steel Co Ltd | 薄膜多結晶シリコン太陽電池用絶縁基板及びその製造方法 |
| US6646039B2 (en) * | 2002-03-05 | 2003-11-11 | Dow Corning Corporation | Hydrosilyation cured silicone resin containing colloidal silica and a process for producing the same |
-
2004
- 2004-06-18 US US10/566,788 patent/US20070111014A1/en not_active Abandoned
- 2004-06-18 EP EP20040755651 patent/EP1654334A1/en not_active Withdrawn
- 2004-06-18 WO PCT/US2004/019609 patent/WO2005017058A1/en not_active Ceased
- 2004-06-18 JP JP2006522551A patent/JP2007502333A/ja active Pending
- 2004-06-18 CA CA 2543366 patent/CA2543366A1/en not_active Abandoned
- 2004-06-18 KR KR1020067002276A patent/KR20060066080A/ko not_active Ceased
- 2004-06-18 CN CN200480028839A patent/CN100582188C/zh not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060066080A (ko) | 2006-06-15 |
| CN100582188C (zh) | 2010-01-20 |
| JP2007502333A (ja) | 2007-02-08 |
| EP1654334A1 (en) | 2006-05-10 |
| WO2005017058A1 (en) | 2005-02-24 |
| US20070111014A1 (en) | 2007-05-17 |
| CN1863882A (zh) | 2006-11-15 |
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