KR20060066080A - 광전지 어플리케이션을 위한 실리콘 기반의 유전성 코팅 및필름 - Google Patents

광전지 어플리케이션을 위한 실리콘 기반의 유전성 코팅 및필름 Download PDF

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Publication number
KR20060066080A
KR20060066080A KR1020067002276A KR20067002276A KR20060066080A KR 20060066080 A KR20060066080 A KR 20060066080A KR 1020067002276 A KR1020067002276 A KR 1020067002276A KR 20067002276 A KR20067002276 A KR 20067002276A KR 20060066080 A KR20060066080 A KR 20060066080A
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KR
South Korea
Prior art keywords
group
dielectric coating
following formula
groups
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020067002276A
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English (en)
Korean (ko)
Inventor
디미트리스 카트솔리스
미치타카 수토
Original Assignee
다우 코닝 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 다우 코닝 코포레이션 filed Critical 다우 코닝 코포레이션
Publication of KR20060066080A publication Critical patent/KR20060066080A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/04—Polysiloxanes
    • C09D183/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Paints Or Removers (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
KR1020067002276A 2003-08-01 2004-06-18 광전지 어플리케이션을 위한 실리콘 기반의 유전성 코팅 및필름 Ceased KR20060066080A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US49188303P 2003-08-01 2003-08-01
US60/491,883 2003-08-01

Publications (1)

Publication Number Publication Date
KR20060066080A true KR20060066080A (ko) 2006-06-15

Family

ID=34193100

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020067002276A Ceased KR20060066080A (ko) 2003-08-01 2004-06-18 광전지 어플리케이션을 위한 실리콘 기반의 유전성 코팅 및필름

Country Status (7)

Country Link
US (1) US20070111014A1 (enExample)
EP (1) EP1654334A1 (enExample)
JP (1) JP2007502333A (enExample)
KR (1) KR20060066080A (enExample)
CN (1) CN100582188C (enExample)
CA (1) CA2543366A1 (enExample)
WO (1) WO2005017058A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101138798B1 (ko) * 2008-12-29 2012-04-24 제일모직주식회사 신뢰성이 향상된 이방 전도성 필름용 조성물 및 이를 이용한 이방전도성 필름
KR20190024731A (ko) * 2017-08-29 2019-03-08 베이징 케이엠티 테크놀로지 코.,엘티디. 몰드 성형이 가능한 실리콘 수지, 조성물 및 이의 반도체 발광소자
WO2025171275A1 (en) * 2024-02-08 2025-08-14 Honeywell International Inc. Polysiloxane compositions for optoelectronic device applications involving moisture sensitive layers

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100273011A1 (en) * 1996-12-20 2010-10-28 Bianxiao Zhong Silicone Composition, Silicone Adhesive, Coated and Laminated Substrates
JP5219332B2 (ja) * 2005-09-20 2013-06-26 新日鉄住金マテリアルズ株式会社 被覆ステンレス箔及び薄膜太陽電池
US20070099005A1 (en) * 2005-10-31 2007-05-03 Honeywell International Inc. Thick crack-free silica film by colloidal silica incorporation
EP2016625B1 (en) * 2006-04-18 2009-09-02 Dow Corning Corporation Copper indium diselenide-based photovoltaic device and method of preparing the same
WO2007120905A2 (en) 2006-04-18 2007-10-25 Dow Corning Corporation Cadmium telluride-based photovoltaic device and method of preparing the same
ATE448569T1 (de) * 2006-04-18 2009-11-15 Dow Corning Fotovoltaische anordnung auf kupfer-indium- diselenidbasis und herstellungsverfahren dafür
US8304085B2 (en) * 2006-04-18 2012-11-06 Dow Corning Corporation Metal foil substrates coated with condensation cured silicone resin compositions
US8207442B2 (en) 2006-04-18 2012-06-26 Itn Energy Systems, Inc. Reinforcing structures for thin-film photovoltaic device substrates, and associated methods
JP5541918B2 (ja) * 2006-05-22 2014-07-09 ナンヤン テクノロジカル ユニヴァーシティー 有機薄膜トランジスタ用の溶液プロセスにより作製される無機膜
WO2009007786A2 (en) * 2006-06-05 2009-01-15 Dow Corning Corporation A solar cell including a silicone resin layer
US20080012074A1 (en) * 2006-07-14 2008-01-17 Air Products And Chemicals, Inc. Low Temperature Sol-Gel Silicates As Dielectrics or Planarization Layers For Thin Film Transistors
WO2008036769A2 (en) 2006-09-19 2008-03-27 Itn Energy Systems, Inc. Semi-transparent dual layer back contact for bifacial and tandem junction thin-film photovolataic devices
WO2008079179A1 (en) 2006-12-20 2008-07-03 Dow Corning Corporation Glass substrates coated or laminated with cured silicone resin compositions
JP5091249B2 (ja) 2006-12-20 2012-12-05 ダウ・コーニング・コーポレイション 多層の硬化シリコーン樹脂組成物で被覆またはラミネートされたガラス基板
JP2011516626A (ja) * 2008-03-04 2011-05-26 ダウ・コーニング・コーポレイション シリコーン組成物、シリコーン接着剤、被覆基板及び積層基板
JP2011518893A (ja) * 2008-03-04 2011-06-30 ダウ・コーニング・コーポレイション ボロシロキサン組成物、ボロシロキサン接着剤、塗装基板及び積層基板
US20110045277A1 (en) * 2008-05-27 2011-02-24 Nathan Greer Adhesive Tape and Laminated Glass
TW201004795A (en) * 2008-07-31 2010-02-01 Dow Corning Laminated glass
JP4973783B2 (ja) * 2008-08-13 2012-07-11 富士通株式会社 フィルム貼着装置及びフィルム貼着方法及び電子ペーパの製造方法
US20100059385A1 (en) * 2008-09-06 2010-03-11 Delin Li Methods for fabricating thin film solar cells
JP5471180B2 (ja) * 2008-09-11 2014-04-16 信越化学工業株式会社 シリコーン積層基板、その製造方法、シリコーン積層基板製造用シリコーン樹脂組成物及びｌｅｄ装置
US8557437B2 (en) * 2009-03-25 2013-10-15 Tdk Corporation Electrode comprising protective layer for lithium ion secondary battery and lithium ion secondary battery
US8419535B2 (en) * 2009-06-08 2013-04-16 Cfph, Llc Mobile playing card devices
US8784189B2 (en) * 2009-06-08 2014-07-22 Cfph, Llc Interprocess communication regarding movement of game devices
US8613671B2 (en) * 2009-06-08 2013-12-24 Cfph, Llc Data transfer and control among multiple computer devices in a gaming environment
US8287386B2 (en) * 2009-06-08 2012-10-16 Cfph, Llc Electrical transmission among interconnected gaming systems
US8545327B2 (en) * 2009-06-08 2013-10-01 Cfph, Llc Amusement device including means for processing electronic data in play of a game in which an outcome is dependant upon card values
US8771078B2 (en) 2009-06-08 2014-07-08 Cfph, Llc Amusement device including means for processing electronic data in play of a game of chance
US8545328B2 (en) * 2009-06-08 2013-10-01 Cfph, Llc Portable electronic charge device for card devices
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
DE102009042447A1 (de) * 2009-09-23 2011-04-07 Sasol Germany Gmbh Zusammensetzungen enthaltend Dialkylether, daraus hergestellte Beschichtungen und Verwendung von Dialkylethern
EP2328183A1 (de) * 2009-11-26 2011-06-01 Engineered Products Switzerland AG Substrat mit einer Metallfolie zur Herstellung von Photovoltaik-Zellen
KR101133061B1 (ko) * 2010-01-25 2012-04-04 주식회사 엘지화학 광전지용 시트
JP2014500897A (ja) 2010-11-09 2014-01-16 ダウ コーニング コーポレーション 有機リン酸化合物により可塑化されたヒドロシリル化硬化シリコーン樹脂
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US20150209654A1 (en) 2013-11-12 2015-07-30 Deq Systems Corp. Reconfigurable playing cards and game display devices
US10544329B2 (en) 2015-04-13 2020-01-28 Honeywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications
JP6203986B2 (ja) 2015-05-27 2017-09-27 京セラ株式会社 太陽電池素子およびその製造方法
JP2017120873A (ja) 2015-12-25 2017-07-06 京セラ株式会社 絶縁性ペーストおよびその製造方法並びに太陽電池素子の製造方法
CN109651614A (zh) * 2017-10-12 2019-04-19 弗洛里光电材料（苏州）有限公司 八硅倍半氧烷纳米杂化分子化合物及其应用
JP7048367B2 (ja) * 2018-03-15 2022-04-05 日鉄ケミカル＆マテリアル株式会社 平坦化膜形成用塗布液およびその製造方法、平坦化膜付き金属箔コイルおよびその製造方法、並びにそれらに用いるシリカ微粒子含有ケトン系溶剤
WO2020180837A1 (en) 2019-03-07 2020-09-10 Liquid X Printed Metals, Inc. Thermal cure dielectric ink
RO138402A2 (ro) * 2021-09-27 2024-09-30 Robert Bosch Gmbh Compoziţie compozită formatoare de (poli)silsesquioxan
DE102022205830A1 (de) * 2021-09-27 2023-03-30 Robert Bosch Gesellschaft mit beschränkter Haftung (Poly-)Silsesquioxan ausbildende Kompositzusammensetzung

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2830968A (en) * 1955-05-27 1958-04-15 Dow Corning Organosilicon resins
JPS5859222A (ja) * 1981-10-03 1983-04-08 Japan Synthetic Rubber Co Ltd オルガノポリシルセスキオキサン及びその製造方法
DE3278567D1 (en) 1981-10-03 1988-07-07 Japan Synthetic Rubber Co Ltd Solvent-soluble organopolysilsesquioxanes, processes for producing the same, and compositions and semiconductor devices using the same
US5043789A (en) 1990-03-15 1991-08-27 International Business Machines Corporation Planarizing silsesquioxane copolymer coating
JP2928341B2 (ja) 1990-07-03 1999-08-03 三菱電機株式会社 シリコーンラダー系樹脂塗布液組成物
US5063267A (en) * 1990-11-28 1991-11-05 Dow Corning Corporation Hydrogen silsesquioxane resin fractions and their use as coating materials
JPH08188649A (ja) * 1995-01-10 1996-07-23 Kansai Shin Gijutsu Kenkyusho:Kk ラダーポリシロキサンおよびその製造方法
JP3183390B2 (ja) * 1995-09-05 2001-07-09 キヤノン株式会社 光電変換装置及びそれを用いた撮像装置
GB9602873D0 (en) * 1996-02-13 1996-04-10 Dow Corning Sa Heating elements and process for manufacture thereof
KR100255659B1 (ko) * 1996-03-30 2000-05-01 윤종용 반도체 장치의 sog층 처리 방법
US5767014A (en) * 1996-10-28 1998-06-16 International Business Machines Corporation Integrated circuit and process for its manufacture
JP3635180B2 (ja) * 1997-02-24 2005-04-06 ダウ コーニング アジア株式会社 シリル化ポリメチルシルセスキオキサン、その製造方法、それを用いた組成物
US5906859A (en) * 1998-07-10 1999-05-25 Dow Corning Corporation Method for producing low dielectric coatings from hydrogen silsequioxane resin
JP3543669B2 (ja) 1999-03-31 2004-07-14 信越化学工業株式会社 絶縁膜形成用塗布液及び絶縁膜の形成方法
JP2001011646A (ja) * 1999-04-30 2001-01-16 Kawasaki Steel Corp 表面処理鋼板
JP2000349320A (ja) * 1999-06-08 2000-12-15 Kobe Steel Ltd 耐電圧特性に優れたＡｌ合金製絶縁材料およびその製造方法
US6310281B1 (en) * 2000-03-16 2001-10-30 Global Solar Energy, Inc. Thin-film, flexible photovoltaic module
JP2002097365A (ja) * 2000-09-25 2002-04-02 Nisshin Steel Co Ltd 薄膜多結晶シリコン太陽電池用絶縁基板及びその製造方法
US6646039B2 (en) * 2002-03-05 2003-11-11 Dow Corning Corporation Hydrosilyation cured silicone resin containing colloidal silica and a process for producing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101138798B1 (ko) * 2008-12-29 2012-04-24 제일모직주식회사 신뢰성이 향상된 이방 전도성 필름용 조성물 및 이를 이용한 이방전도성 필름
KR20190024731A (ko) * 2017-08-29 2019-03-08 베이징 케이엠티 테크놀로지 코.,엘티디. 몰드 성형이 가능한 실리콘 수지, 조성물 및 이의 반도체 발광소자
WO2025171275A1 (en) * 2024-02-08 2025-08-14 Honeywell International Inc. Polysiloxane compositions for optoelectronic device applications involving moisture sensitive layers

Also Published As

Publication number Publication date
CA2543366A1 (en) 2005-02-24
CN100582188C (zh) 2010-01-20
JP2007502333A (ja) 2007-02-08
EP1654334A1 (en) 2006-05-10
WO2005017058A1 (en) 2005-02-24
US20070111014A1 (en) 2007-05-17
CN1863882A (zh) 2006-11-15

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