JP2007500445A - チタン・タングステンのベース層および関連構造体を含む導電構造体を形成する方法 - Google Patents

チタン・タングステンのベース層および関連構造体を含む導電構造体を形成する方法 Download PDF

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JP2007500445A
JP2007500445A JP2006521883A JP2006521883A JP2007500445A JP 2007500445 A JP2007500445 A JP 2007500445A JP 2006521883 A JP2006521883 A JP 2006521883A JP 2006521883 A JP2006521883 A JP 2006521883A JP 2007500445 A JP2007500445 A JP 2007500445A
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layer
conductive
conductive structure
titanium
insulating layer
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Japanese (ja)
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JP2007500445A5 (https=
Inventor
ミス，ダニエル・ジェイ
ゼンダー，ディーン
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ユニティブ・インターナショナル・リミテッド
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Publication of JP2007500445A publication Critical patent/JP2007500445A/ja
Publication of JP2007500445A5 publication Critical patent/JP2007500445A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
JP2006521883A 2003-07-25 2004-07-16 チタン・タングステンのベース層および関連構造体を含む導電構造体を形成する方法 Pending JP2007500445A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US49034003P 2003-07-25 2003-07-25
US50758703P 2003-10-01 2003-10-01
PCT/US2004/022949 WO2005013339A2 (en) 2003-07-25 2004-07-16 Methods of forming conductive structures including titanium-tungsten base layers and related structures

Publications (2)

Publication Number Publication Date
JP2007500445A true JP2007500445A (ja) 2007-01-11
JP2007500445A5 JP2007500445A5 (https=) 2007-09-13

Family

ID=34118827

Family Applications (1)

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JP2006521883A Pending JP2007500445A (ja) 2003-07-25 2004-07-16 チタン・タングステンのベース層および関連構造体を含む導電構造体を形成する方法

Country Status (6)

Country Link
US (2) US7244671B2 (https=)
EP (1) EP1649508A2 (https=)
JP (1) JP2007500445A (https=)
KR (1) KR20060034716A (https=)
TW (1) TW200524054A (https=)
WO (1) WO2005013339A2 (https=)

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US7172786B2 (en) * 2004-05-14 2007-02-06 Hitachi Global Storage Technologies Netherlands B.V. Methods for improving positioning performance of electron beam lithography on magnetic wafers
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KR100652443B1 (ko) 2005-11-17 2006-12-01 삼성전자주식회사 재배선층을 갖는 웨이퍼 레벨 패키지 및 그 형성방법
JP4611943B2 (ja) * 2006-07-13 2011-01-12 Ｏｋｉセミコンダクタ株式会社 半導体装置
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US7667335B2 (en) * 2007-09-20 2010-02-23 Stats Chippac, Ltd. Semiconductor package with passivation island for reducing stress on solder bumps
KR101483273B1 (ko) * 2008-09-29 2015-01-16 삼성전자주식회사 구리 패드와 패드 장벽층을 포함하는 반도체 소자와 그의 배선 구조 및 그 제조 방법들
JP5296567B2 (ja) * 2009-02-06 2013-09-25 ラピスセミコンダクタ株式会社 半導体装置の製造方法
JP5249080B2 (ja) * 2009-02-19 2013-07-31 セイコーインスツル株式会社 半導体装置
US8759209B2 (en) 2010-03-25 2014-06-24 Stats Chippac, Ltd. Semiconductor device and method of forming a dual UBM structure for lead free bump connections
DE112012003318T5 (de) * 2011-08-11 2014-04-30 Flipchip International, Llc Dünnfilm-Struktur für hochdichte Induktivitäten und Umverdrahtung bei Wafer-Level Packaging
US9159686B2 (en) 2012-01-24 2015-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Crack stopper on under-bump metallization layer
US9111949B2 (en) 2012-04-09 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus of wafer level package for heterogeneous integration technology
TWI485826B (zh) * 2012-05-25 2015-05-21 財團法人工業技術研究院 晶片堆疊結構以及晶片堆疊結構的製作方法
KR101452587B1 (ko) * 2012-06-28 2014-10-22 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 이종 집적 기술에 대한 웨이퍼 레벨 패키지의 방법 및 장치
US8871634B2 (en) * 2012-08-30 2014-10-28 Intel Corporation Chip package incorporating interfacial adhesion through conductor sputtering
US9355906B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging devices and methods of manufacture thereof
US9401328B2 (en) 2014-12-22 2016-07-26 Stmicroelectronics S.R.L. Electric contact structure having a diffusion barrier for an electronic device and method for manufacturing the electric contact structure
US9859213B2 (en) * 2015-12-07 2018-01-02 Dyi-chung Hu Metal via structure
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TWI744498B (zh) * 2018-03-05 2021-11-01 矽品精密工業股份有限公司 基板結構及其製法
US20220165694A1 (en) * 2020-11-26 2022-05-26 Mediatek Inc. Semiconductor structure
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KR20150095547A (ko) * 2014-02-13 2015-08-21 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 언더 범프 금속화
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Also Published As

Publication number Publication date
KR20060034716A (ko) 2006-04-24
WO2005013339A2 (en) 2005-02-10
US20070241460A1 (en) 2007-10-18
US20050020047A1 (en) 2005-01-27
US7244671B2 (en) 2007-07-17
US7550849B2 (en) 2009-06-23
EP1649508A2 (en) 2006-04-26
TW200524054A (en) 2005-07-16
WO2005013339A3 (en) 2005-04-28

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