JP2007324628A - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
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- JP2007324628A JP2007324628A JP2007232324A JP2007232324A JP2007324628A JP 2007324628 A JP2007324628 A JP 2007324628A JP 2007232324 A JP2007232324 A JP 2007232324A JP 2007232324 A JP2007232324 A JP 2007232324A JP 2007324628 A JP2007324628 A JP 2007324628A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 81
- 230000004888 barrier function Effects 0.000 claims description 55
- 239000000969 carrier Substances 0.000 claims description 15
- 238000002347 injection Methods 0.000 claims description 14
- 239000007924 injection Substances 0.000 claims description 14
- 238000002513 implantation Methods 0.000 claims description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 40
- 238000005253 cladding Methods 0.000 description 36
- 239000000758 substrate Substances 0.000 description 19
- 229910052984 zinc sulfide Inorganic materials 0.000 description 16
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- 239000000243 solution Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 11
- 230000010355 oscillation Effects 0.000 description 11
- 238000000103 photoluminescence spectrum Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 230000005428 wave function Effects 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000002052 molecular layer Substances 0.000 description 5
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical group [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 5
- 229910052725 zinc Inorganic materials 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000001451 molecular beam epitaxy Methods 0.000 description 4
- 238000005424 photoluminescence Methods 0.000 description 4
- 238000013139 quantization Methods 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical group [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 238000001994 activation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- 229910001199 N alloy Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005381 potential energy Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005610 quantum mechanics Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
- H01S5/2013—MQW barrier reflection layers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3415—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers
- H01S5/3416—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers containing details related to carrier capture times into wells or barriers tunneling through barriers
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- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3425—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising couples wells or superlattices
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H01S5/00—Semiconductor lasers
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- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/347—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIBVI compounds, e.g. ZnCdSe- laser
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Abstract
【解決手段】注入領域と活性領域の間に、第1および第2半導体層の積層パターンを有するひずみ超格子領域を形成することによって、活性領域へのキャリヤの移動が向上する半導体発光素子が提供される。
【選択図】図6
Description
2a、10 量子井戸
2b、12 バリヤ層
3、92、96 ガイド領域
4、64、70、74、90、98 クラッド領域
13、34、42、58、76、78、100、102 超格子領域
18、107 ミニバンド
20 注入領域
Claims (3)
- 活性領域と、超格子領域と、注入領域とを備えた半導体発光素子であって、
前記超格子領域は、前記活性領域と前記注入領域との間に設けられ、
前記超格子領域は、複数の第1半導体層と該第1半導体層よりもバンドギャップの小さい複数の第2半導体層の積層パターンにより形成され、
前記第1半導体層および前記第2半導体層は、II−VI族半導体からなるか、または、(AlGaIn)NからなるIII−V族半導体からなり、
前記活性領域は、バリヤ層と量子井戸層とを含み、
前記第1半導体および前記第2半導体のバンドギャップはそれぞれ前記活性領域内の量子井戸層のバンドギャップより大きく、
前記超格子はひずみ超格子であり、
前記第1半導体層および前記第2半導体層の膜厚は、キャリヤを容易に移動させ得るように十分に薄くされた、半導体発光素子。 - 前記超格子領域から前記活性領域内のバリヤ層へキャリヤを容易に移動させ得る、請求項1記載の半導体発光素子。
- 前記超格子領域において、前記第1半導体層および前記第2半導体層の少なくとも一方がn型又はp型ドープされている、請求項1又は2に記載の半導体発光素子。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9504666A GB2298735A (en) | 1995-03-08 | 1995-03-08 | Semiconductor device having a miniband |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004190448A Division JP4067104B2 (ja) | 1995-03-08 | 2004-06-28 | ミニバンドを有する半導体素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007324628A true JP2007324628A (ja) | 2007-12-13 |
JP4685845B2 JP4685845B2 (ja) | 2011-05-18 |
Family
ID=10770858
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP05213596A Expired - Fee Related JP3909884B2 (ja) | 1995-03-08 | 1996-03-08 | 半導体レーザ素子 |
JP2004190448A Expired - Fee Related JP4067104B2 (ja) | 1995-03-08 | 2004-06-28 | ミニバンドを有する半導体素子 |
JP2006348527A Expired - Fee Related JP4153966B2 (ja) | 1995-03-08 | 2006-12-25 | 半導体発光素子 |
JP2007232324A Expired - Fee Related JP4685845B2 (ja) | 1995-03-08 | 2007-09-07 | 半導体発光素子 |
Family Applications Before (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP05213596A Expired - Fee Related JP3909884B2 (ja) | 1995-03-08 | 1996-03-08 | 半導体レーザ素子 |
JP2004190448A Expired - Fee Related JP4067104B2 (ja) | 1995-03-08 | 2004-06-28 | ミニバンドを有する半導体素子 |
JP2006348527A Expired - Fee Related JP4153966B2 (ja) | 1995-03-08 | 2006-12-25 | 半導体発光素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5747827A (ja) |
EP (2) | EP1213771A3 (ja) |
JP (4) | JP3909884B2 (ja) |
DE (1) | DE69636110T2 (ja) |
GB (1) | GB2298735A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010114403A (ja) * | 2008-11-07 | 2010-05-20 | Samsung Electro-Mechanics Co Ltd | 窒化物半導体素子 |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1964093B (zh) * | 1997-01-09 | 2012-06-27 | 日亚化学工业株式会社 | 氮化物半导体元器件 |
JP3478090B2 (ja) * | 1997-05-26 | 2003-12-10 | 日亜化学工業株式会社 | 窒化物半導体素子 |
US6677619B1 (en) | 1997-01-09 | 2004-01-13 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
JPH1146038A (ja) * | 1997-05-29 | 1999-02-16 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子及びその製造方法 |
CA2298491C (en) * | 1997-07-25 | 2009-10-06 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
US6459096B1 (en) * | 1998-01-14 | 2002-10-01 | Manijeh Razeghi | Multi quantum well grinsch detector |
EP1063711B1 (en) | 1998-03-12 | 2013-02-27 | Nichia Corporation | Nitride semiconductor device |
DE19824222A1 (de) * | 1998-05-29 | 1999-12-02 | Lite On Electronics Inc | Leuchtdiode mit lichtdurchlässiger Fensterschicht |
GB9913950D0 (en) | 1999-06-15 | 1999-08-18 | Arima Optoelectronics Corp | Unipolar light emitting devices based on iii-nitride semiconductor superlattices |
DE19955747A1 (de) | 1999-11-19 | 2001-05-23 | Osram Opto Semiconductors Gmbh | Optische Halbleitervorrichtung mit Mehrfach-Quantentopf-Struktur |
JP4854829B2 (ja) * | 1999-11-22 | 2012-01-18 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子 |
JP4547765B2 (ja) * | 2000-03-30 | 2010-09-22 | 三菱電機株式会社 | 光変調器及び光変調器付半導体レーザ装置、並びに光通信装置 |
US6891187B2 (en) * | 2001-08-17 | 2005-05-10 | Lucent Technologies Inc. | Optical devices with heavily doped multiple quantum wells |
US6711195B2 (en) * | 2002-02-28 | 2004-03-23 | Agilent Technologies, Inc. | Long-wavelength photonic device with GaAsSb quantum-well layer |
US7042921B2 (en) | 2003-07-11 | 2006-05-09 | Emcore Corporation | Complex coupled single mode laser with dual active region |
NO20041523L (no) * | 2003-09-19 | 2005-03-21 | Sumitomo Electric Industries | Lysemitterende halvlederelement |
GB2410848A (en) | 2004-02-05 | 2005-08-10 | Dyson Ltd | Voltage compensation in switched reluctance motor |
GB2410847A (en) | 2004-02-05 | 2005-08-10 | Dyson Ltd | Control of motor winding energisation according to rotor angle |
US7098471B2 (en) * | 2004-06-14 | 2006-08-29 | Avago Technologies Fiber Ip (Singapore) Pte. Ltd. | Semiconductor quantum well devices and methods of making the same |
KR100670531B1 (ko) * | 2004-08-26 | 2007-01-16 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
KR100718129B1 (ko) * | 2005-06-03 | 2007-05-14 | 삼성전자주식회사 | Ⅲ-Ⅴ족 GaN계 화합물 반도체 소자 |
JP4920221B2 (ja) * | 2005-09-05 | 2012-04-18 | 学校法人上智学院 | InP基板を有する光半導体装置 |
DE102007044439B4 (de) * | 2007-09-18 | 2022-03-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer Halbleiterchip mit Quantentopfstruktur |
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Also Published As
Publication number | Publication date |
---|---|
JPH08250810A (ja) | 1996-09-27 |
DE69636110T2 (de) | 2007-04-19 |
EP1213771A2 (en) | 2002-06-12 |
EP0731510A3 (en) | 1997-01-15 |
EP0731510B1 (en) | 2006-05-10 |
JP2004274089A (ja) | 2004-09-30 |
GB2298735A (en) | 1996-09-11 |
EP0731510A2 (en) | 1996-09-11 |
GB9504666D0 (en) | 1995-04-26 |
JP4067104B2 (ja) | 2008-03-26 |
DE69636110D1 (de) | 2006-06-14 |
JP4685845B2 (ja) | 2011-05-18 |
JP4153966B2 (ja) | 2008-09-24 |
EP1213771A3 (en) | 2002-10-02 |
JP2007081449A (ja) | 2007-03-29 |
JP3909884B2 (ja) | 2007-04-25 |
US5747827A (en) | 1998-05-05 |
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