JP2007294925A5 - - Google Patents

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Publication number
JP2007294925A5
JP2007294925A5 JP2007082210A JP2007082210A JP2007294925A5 JP 2007294925 A5 JP2007294925 A5 JP 2007294925A5 JP 2007082210 A JP2007082210 A JP 2007082210A JP 2007082210 A JP2007082210 A JP 2007082210A JP 2007294925 A5 JP2007294925 A5 JP 2007294925A5
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JP
Japan
Prior art keywords
memory device
resistance
semiconductor substrate
nonvolatile memory
volatile memory
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JP2007082210A
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English (en)
Japanese (ja)
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JP2007294925A (ja
JP5160116B2 (ja
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Priority claimed from KR1020060036408A external-priority patent/KR101213702B1/ko
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Publication of JP2007294925A publication Critical patent/JP2007294925A/ja
Publication of JP2007294925A5 publication Critical patent/JP2007294925A5/ja
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Publication of JP5160116B2 publication Critical patent/JP5160116B2/ja
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JP2007082210A 2006-04-21 2007-03-27 不揮発性メモリ素子 Active JP5160116B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2006-0036408 2006-04-21
KR1020060036408A KR101213702B1 (ko) 2006-04-21 2006-04-21 비휘발성 메모리 소자, 그 동작 방법, 및 그 제조 방법

Publications (3)

Publication Number Publication Date
JP2007294925A JP2007294925A (ja) 2007-11-08
JP2007294925A5 true JP2007294925A5 (enExample) 2010-04-30
JP5160116B2 JP5160116B2 (ja) 2013-03-13

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ID=38765175

Family Applications (1)

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JP2007082210A Active JP5160116B2 (ja) 2006-04-21 2007-03-27 不揮発性メモリ素子

Country Status (4)

Country Link
US (1) US7872249B2 (enExample)
JP (1) JP5160116B2 (enExample)
KR (1) KR101213702B1 (enExample)
CN (1) CN101060129A (enExample)

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KR101291222B1 (ko) * 2007-11-29 2013-07-31 삼성전자주식회사 상변화 메모리 소자의 동작 방법
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US8034655B2 (en) 2008-04-08 2011-10-11 Micron Technology, Inc. Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays
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US8427859B2 (en) 2010-04-22 2013-04-23 Micron Technology, Inc. Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
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US8759809B2 (en) 2010-10-21 2014-06-24 Micron Technology, Inc. Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer
US8796661B2 (en) 2010-11-01 2014-08-05 Micron Technology, Inc. Nonvolatile memory cells and methods of forming nonvolatile memory cell
US8526213B2 (en) 2010-11-01 2013-09-03 Micron Technology, Inc. Memory cells, methods of programming memory cells, and methods of forming memory cells
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US8537592B2 (en) 2011-04-15 2013-09-17 Micron Technology, Inc. Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
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US9224866B2 (en) 2013-08-27 2015-12-29 Globalfoundries Inc. Suspended body field effect transistor
US9070770B2 (en) 2013-08-27 2015-06-30 International Business Machines Corporation Low interfacial defect field effect transistor
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US9472281B1 (en) * 2015-06-30 2016-10-18 HGST Netherlands B.V. Non-volatile memory with adjustable cell bit shape
KR102452826B1 (ko) * 2015-11-10 2022-10-12 삼성전자주식회사 메모리 장치
US10797238B2 (en) 2016-01-26 2020-10-06 Arm Ltd. Fabricating correlated electron material (CEM) devices
US10211398B2 (en) * 2017-07-03 2019-02-19 Arm Ltd. Method for the manufacture of a correlated electron material device
KR102731931B1 (ko) * 2018-12-21 2024-11-21 삼성전자주식회사 융합 메모리 소자 및 그 제조 방법
KR102706732B1 (ko) * 2019-04-08 2024-09-19 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
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KR100773537B1 (ko) * 2003-06-03 2007-11-07 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
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