KR101213702B1 - 비휘발성 메모리 소자, 그 동작 방법, 및 그 제조 방법 - Google Patents

비휘발성 메모리 소자, 그 동작 방법, 및 그 제조 방법 Download PDF

Info

Publication number
KR101213702B1
KR101213702B1 KR1020060036408A KR20060036408A KR101213702B1 KR 101213702 B1 KR101213702 B1 KR 101213702B1 KR 1020060036408 A KR1020060036408 A KR 1020060036408A KR 20060036408 A KR20060036408 A KR 20060036408A KR 101213702 B1 KR101213702 B1 KR 101213702B1
Authority
KR
South Korea
Prior art keywords
semiconductor substrate
layers
memory device
resistance
nonvolatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020060036408A
Other languages
English (en)
Korean (ko)
Other versions
KR20070104159A (ko
Inventor
박윤동
이명재
김동철
안승언
Original Assignee
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020060036408A priority Critical patent/KR101213702B1/ko
Priority to CNA2006101717163A priority patent/CN101060129A/zh
Priority to US11/723,018 priority patent/US7872249B2/en
Priority to JP2007082210A priority patent/JP5160116B2/ja
Priority to US11/826,059 priority patent/US7636251B2/en
Publication of KR20070104159A publication Critical patent/KR20070104159A/ko
Application granted granted Critical
Publication of KR101213702B1 publication Critical patent/KR101213702B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/10—Phase change RAM [PCRAM, PRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0073—Write using bi-directional cell biasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/32—Material having simple binary metal oxide structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
KR1020060036408A 2006-04-21 2006-04-21 비휘발성 메모리 소자, 그 동작 방법, 및 그 제조 방법 Active KR101213702B1 (ko)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020060036408A KR101213702B1 (ko) 2006-04-21 2006-04-21 비휘발성 메모리 소자, 그 동작 방법, 및 그 제조 방법
CNA2006101717163A CN101060129A (zh) 2006-04-21 2006-12-19 非易失性存储器件及其操作和制造方法
US11/723,018 US7872249B2 (en) 2006-04-21 2007-03-15 Nonvolatile memory device and methods of operating and fabricating the same
JP2007082210A JP5160116B2 (ja) 2006-04-21 2007-03-27 不揮発性メモリ素子
US11/826,059 US7636251B2 (en) 2006-04-21 2007-07-12 Methods of operating a non-volatile memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060036408A KR101213702B1 (ko) 2006-04-21 2006-04-21 비휘발성 메모리 소자, 그 동작 방법, 및 그 제조 방법

Publications (2)

Publication Number Publication Date
KR20070104159A KR20070104159A (ko) 2007-10-25
KR101213702B1 true KR101213702B1 (ko) 2012-12-18

Family

ID=38765175

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060036408A Active KR101213702B1 (ko) 2006-04-21 2006-04-21 비휘발성 메모리 소자, 그 동작 방법, 및 그 제조 방법

Country Status (4)

Country Link
US (1) US7872249B2 (enExample)
JP (1) JP5160116B2 (enExample)
KR (1) KR101213702B1 (enExample)
CN (1) CN101060129A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8980721B2 (en) 2009-12-04 2015-03-17 Electronics And Telecommunications Research Institute Resistive memory device and method of fabricating the same
US9070770B2 (en) 2013-08-27 2015-06-30 International Business Machines Corporation Low interfacial defect field effect transistor
US9224866B2 (en) 2013-08-27 2015-12-29 Globalfoundries Inc. Suspended body field effect transistor

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090055874A (ko) * 2007-11-29 2009-06-03 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
KR101291222B1 (ko) * 2007-11-29 2013-07-31 삼성전자주식회사 상변화 메모리 소자의 동작 방법
US7768812B2 (en) 2008-01-15 2010-08-03 Micron Technology, Inc. Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices
KR101418434B1 (ko) * 2008-03-13 2014-08-14 삼성전자주식회사 비휘발성 메모리 장치, 이의 제조 방법, 및 이를 포함하는프로세싱 시스템
JP5477284B2 (ja) * 2008-03-25 2014-04-23 日本電気株式会社 半導体記憶装置、メモリセルアレイ、半導体記憶装置の製造方法および駆動方法
US8034655B2 (en) 2008-04-08 2011-10-11 Micron Technology, Inc. Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays
US8211743B2 (en) 2008-05-02 2012-07-03 Micron Technology, Inc. Methods of forming non-volatile memory cells having multi-resistive state material between conductive electrodes
KR100946179B1 (ko) * 2008-05-29 2010-03-09 한국과학기술원 비휘발성 반도체 메모리 소자 및 그 제조방법
US8134137B2 (en) 2008-06-18 2012-03-13 Micron Technology, Inc. Memory device constructions, memory cell forming methods, and semiconductor construction forming methods
US9343665B2 (en) * 2008-07-02 2016-05-17 Micron Technology, Inc. Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
JP5322533B2 (ja) 2008-08-13 2013-10-23 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
KR101424138B1 (ko) * 2008-09-19 2014-08-04 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
GB2473814B (en) * 2009-09-16 2014-06-11 Spheritech Ltd Hollow particulate support
US8427859B2 (en) 2010-04-22 2013-04-23 Micron Technology, Inc. Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
US8411477B2 (en) 2010-04-22 2013-04-02 Micron Technology, Inc. Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
US8289763B2 (en) 2010-06-07 2012-10-16 Micron Technology, Inc. Memory arrays
JP5508944B2 (ja) * 2010-06-08 2014-06-04 株式会社東芝 半導体記憶装置
US8331126B2 (en) * 2010-06-28 2012-12-11 Qualcomm Incorporated Non-volatile memory with split write and read bitlines
CN102339846B (zh) * 2010-07-19 2015-10-07 旺宏电子股份有限公司 具有可调整栅极电阻值的晶体管的半导体存储器元件
US8351242B2 (en) 2010-09-29 2013-01-08 Micron Technology, Inc. Electronic devices, memory devices and memory arrays
JP2012089643A (ja) 2010-10-19 2012-05-10 Sony Corp 記憶装置の製造方法、並びに記憶素子および記憶装置
US8759809B2 (en) 2010-10-21 2014-06-24 Micron Technology, Inc. Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer
US8796661B2 (en) 2010-11-01 2014-08-05 Micron Technology, Inc. Nonvolatile memory cells and methods of forming nonvolatile memory cell
US8526213B2 (en) 2010-11-01 2013-09-03 Micron Technology, Inc. Memory cells, methods of programming memory cells, and methods of forming memory cells
US9454997B2 (en) 2010-12-02 2016-09-27 Micron Technology, Inc. Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells
US8431458B2 (en) 2010-12-27 2013-04-30 Micron Technology, Inc. Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells
US8791447B2 (en) 2011-01-20 2014-07-29 Micron Technology, Inc. Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
US8488365B2 (en) 2011-02-24 2013-07-16 Micron Technology, Inc. Memory cells
US8537592B2 (en) 2011-04-15 2013-09-17 Micron Technology, Inc. Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
EP2608210B1 (en) * 2011-12-23 2019-04-17 IMEC vzw Stacked RRAM array with integrated transistor selector
KR101508971B1 (ko) * 2014-04-22 2015-04-08 서울대학교산학협력단 재구성 가능한 전자 소자 및 이의 동작 방법
US9472281B1 (en) * 2015-06-30 2016-10-18 HGST Netherlands B.V. Non-volatile memory with adjustable cell bit shape
KR102452826B1 (ko) * 2015-11-10 2022-10-12 삼성전자주식회사 메모리 장치
US10797238B2 (en) 2016-01-26 2020-10-06 Arm Ltd. Fabricating correlated electron material (CEM) devices
US10211398B2 (en) * 2017-07-03 2019-02-19 Arm Ltd. Method for the manufacture of a correlated electron material device
KR102731931B1 (ko) * 2018-12-21 2024-11-21 삼성전자주식회사 융합 메모리 소자 및 그 제조 방법
KR102706732B1 (ko) * 2019-04-08 2024-09-19 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US11164610B1 (en) 2020-06-05 2021-11-02 Qualcomm Incorporated Memory device with built-in flexible double redundancy
US11545202B2 (en) 2021-04-30 2023-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit design and layout with high embedded memory density

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006024868A (ja) 2004-07-09 2006-01-26 Oki Electric Ind Co Ltd 半導体不揮発性メモリセルアレイとその製造方法
US7015535B2 (en) 2004-05-04 2006-03-21 Oki Electric Industry Co., Ltd. Nonvolatile semiconductor memory device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102553A (ja) 1999-09-29 2001-04-13 Sony Corp 半導体装置、その駆動方法および製造方法
US6801448B2 (en) * 2002-11-26 2004-10-05 Sharp Laboratories Of America, Inc. Common bit/common source line high density 1T1R R-RAM array
JP2004221546A (ja) * 2002-12-27 2004-08-05 Sharp Corp 半導体記憶装置及び携帯電子機器
KR100773537B1 (ko) * 2003-06-03 2007-11-07 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
US7064970B2 (en) * 2003-11-04 2006-06-20 Micron Technology, Inc. Serial transistor-cell array architecture
JP2005203463A (ja) 2004-01-14 2005-07-28 Sharp Corp 不揮発性半導体記憶装置
EP1587137A1 (en) * 2004-04-16 2005-10-19 International Business Machines Corporation Deposition process for non-volatile resistance switching memory
KR100652378B1 (ko) * 2004-09-08 2006-12-01 삼성전자주식회사 안티몬 프리커서 및 이를 이용한 상변화 메모리 소자의 제조방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7015535B2 (en) 2004-05-04 2006-03-21 Oki Electric Industry Co., Ltd. Nonvolatile semiconductor memory device
JP2006024868A (ja) 2004-07-09 2006-01-26 Oki Electric Ind Co Ltd 半導体不揮発性メモリセルアレイとその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8980721B2 (en) 2009-12-04 2015-03-17 Electronics And Telecommunications Research Institute Resistive memory device and method of fabricating the same
US9070770B2 (en) 2013-08-27 2015-06-30 International Business Machines Corporation Low interfacial defect field effect transistor
US9224866B2 (en) 2013-08-27 2015-12-29 Globalfoundries Inc. Suspended body field effect transistor
US9431494B2 (en) 2013-08-27 2016-08-30 Globalfoundries Inc. Low interfacial defect field effect transistor

Also Published As

Publication number Publication date
CN101060129A (zh) 2007-10-24
JP2007294925A (ja) 2007-11-08
US7872249B2 (en) 2011-01-18
KR20070104159A (ko) 2007-10-25
JP5160116B2 (ja) 2013-03-13
US20080012064A1 (en) 2008-01-17

Similar Documents

Publication Publication Date Title
KR101213702B1 (ko) 비휘발성 메모리 소자, 그 동작 방법, 및 그 제조 방법
US7939816B2 (en) Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
US6946702B2 (en) Resistance random access memory
US8036018B2 (en) Non-volatile memory devices including stacked NAND-type resistive memory cell strings
US7742331B2 (en) Nonvolatile semiconductor memory device and data erase/write method thereof
JP5512700B2 (ja) 半導体記憶装置およびその製造方法
KR100695164B1 (ko) 스위칭 소자로서 트랜지스터 및 다이오드를 포함하는하이브리드 타입의 비휘발성 메모리 소자
KR102889679B1 (ko) 반도체 메모리 장치
US11552129B2 (en) Semiconductor memory device having variable resistance elements provided between wiring lines
CN1790719B (zh) 包括一电阻器和一晶体管的非易失存储器件
CN100573896C (zh) 具有串联的电阻节点的存储器件
JP2011233831A (ja) 半導体記憶装置
KR101041742B1 (ko) 저항 변화 메모리 소자, 그 제조 방법 및 구동 방법
US7636251B2 (en) Methods of operating a non-volatile memory device
KR100624463B1 (ko) 노어 구조의 하이브리드 멀티비트 비휘발성 메모리 소자 및그 동작 방법
KR101088487B1 (ko) 선택소자 및 3차원 구조 저항 변화 메모리 소자를 갖는 저항 변화 메모리 소자 어레이, 전자제품 및 소자 어레이 제조방법
JP2008021968A (ja) 不揮発性メモリ素子の動作方法
KR20060105360A (ko) 인가 전압에 따라 저항이 변하는 저항체를 메모리 노드사용하는 불휘발성 메모리 소자와 그 제조 및 동작 방법
KR100639999B1 (ko) 상변화층 스페이서를 갖는 상변화 메모리 소자 및 그제조방법
US20170372958A1 (en) Film-edge top electrode
KR20250112592A (ko) 가변 저항 메모리 소자 및 그 제조 방법
CN108807455A (zh) 存储器单元阵列及形成存储器单元阵列的方法

Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20060421

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20110421

Comment text: Request for Examination of Application

Patent event code: PA02011R01I

Patent event date: 20060421

Comment text: Patent Application

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20120622

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20121203

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20121212

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20121213

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
PR1001 Payment of annual fee

Payment date: 20201130

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20211124

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20241126

Start annual number: 13

End annual number: 13