JP2007294925A5 - - Google Patents

Download PDF

Info

Publication number
JP2007294925A5
JP2007294925A5 JP2007082210A JP2007082210A JP2007294925A5 JP 2007294925 A5 JP2007294925 A5 JP 2007294925A5 JP 2007082210 A JP2007082210 A JP 2007082210A JP 2007082210 A JP2007082210 A JP 2007082210A JP 2007294925 A5 JP2007294925 A5 JP 2007294925A5
Authority
JP
Japan
Prior art keywords
memory device
resistance
semiconductor substrate
nonvolatile memory
volatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007082210A
Other languages
English (en)
Japanese (ja)
Other versions
JP5160116B2 (ja
JP2007294925A (ja
Filing date
Publication date
Priority claimed from KR1020060036408A external-priority patent/KR101213702B1/ko
Application filed filed Critical
Publication of JP2007294925A publication Critical patent/JP2007294925A/ja
Publication of JP2007294925A5 publication Critical patent/JP2007294925A5/ja
Application granted granted Critical
Publication of JP5160116B2 publication Critical patent/JP5160116B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2007082210A 2006-04-21 2007-03-27 不揮発性メモリ素子 Active JP5160116B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2006-0036408 2006-04-21
KR1020060036408A KR101213702B1 (ko) 2006-04-21 2006-04-21 비휘발성 메모리 소자, 그 동작 방법, 및 그 제조 방법

Publications (3)

Publication Number Publication Date
JP2007294925A JP2007294925A (ja) 2007-11-08
JP2007294925A5 true JP2007294925A5 (cg-RX-API-DMAC10.html) 2010-04-30
JP5160116B2 JP5160116B2 (ja) 2013-03-13

Family

ID=38765175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007082210A Active JP5160116B2 (ja) 2006-04-21 2007-03-27 不揮発性メモリ素子

Country Status (4)

Country Link
US (1) US7872249B2 (cg-RX-API-DMAC10.html)
JP (1) JP5160116B2 (cg-RX-API-DMAC10.html)
KR (1) KR101213702B1 (cg-RX-API-DMAC10.html)
CN (1) CN101060129A (cg-RX-API-DMAC10.html)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090055874A (ko) * 2007-11-29 2009-06-03 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
KR101291222B1 (ko) * 2007-11-29 2013-07-31 삼성전자주식회사 상변화 메모리 소자의 동작 방법
US7768812B2 (en) 2008-01-15 2010-08-03 Micron Technology, Inc. Memory cells, memory cell programming methods, memory cell reading methods, memory cell operating methods, and memory devices
KR101418434B1 (ko) * 2008-03-13 2014-08-14 삼성전자주식회사 비휘발성 메모리 장치, 이의 제조 방법, 및 이를 포함하는프로세싱 시스템
JP5477284B2 (ja) * 2008-03-25 2014-04-23 日本電気株式会社 半導体記憶装置、メモリセルアレイ、半導体記憶装置の製造方法および駆動方法
US8034655B2 (en) 2008-04-08 2011-10-11 Micron Technology, Inc. Non-volatile resistive oxide memory cells, non-volatile resistive oxide memory arrays, and methods of forming non-volatile resistive oxide memory cells and memory arrays
US8211743B2 (en) 2008-05-02 2012-07-03 Micron Technology, Inc. Methods of forming non-volatile memory cells having multi-resistive state material between conductive electrodes
KR100946179B1 (ko) * 2008-05-29 2010-03-09 한국과학기술원 비휘발성 반도체 메모리 소자 및 그 제조방법
US8134137B2 (en) * 2008-06-18 2012-03-13 Micron Technology, Inc. Memory device constructions, memory cell forming methods, and semiconductor construction forming methods
US9343665B2 (en) * 2008-07-02 2016-05-17 Micron Technology, Inc. Methods of forming a non-volatile resistive oxide memory cell and methods of forming a non-volatile resistive oxide memory array
JP5322533B2 (ja) 2008-08-13 2013-10-23 株式会社東芝 不揮発性半導体記憶装置、及びその製造方法
KR101424138B1 (ko) * 2008-09-19 2014-08-04 삼성전자주식회사 비휘발성 메모리 소자 및 그 제조 방법
GB2473814B (en) * 2009-09-16 2014-06-11 Spheritech Ltd Hollow particulate support
KR101361658B1 (ko) 2009-12-04 2014-02-21 한국전자통신연구원 저항형 메모리 장치 및 그 제조 방법
US8427859B2 (en) 2010-04-22 2013-04-23 Micron Technology, Inc. Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
US8411477B2 (en) 2010-04-22 2013-04-02 Micron Technology, Inc. Arrays of vertically stacked tiers of non-volatile cross point memory cells, methods of forming arrays of vertically stacked tiers of non-volatile cross point memory cells, and methods of reading a data value stored by an array of vertically stacked tiers of non-volatile cross point memory cells
US8289763B2 (en) 2010-06-07 2012-10-16 Micron Technology, Inc. Memory arrays
JP5508944B2 (ja) * 2010-06-08 2014-06-04 株式会社東芝 半導体記憶装置
US8331126B2 (en) * 2010-06-28 2012-12-11 Qualcomm Incorporated Non-volatile memory with split write and read bitlines
CN102339846B (zh) * 2010-07-19 2015-10-07 旺宏电子股份有限公司 具有可调整栅极电阻值的晶体管的半导体存储器元件
US8351242B2 (en) 2010-09-29 2013-01-08 Micron Technology, Inc. Electronic devices, memory devices and memory arrays
JP2012089643A (ja) * 2010-10-19 2012-05-10 Sony Corp 記憶装置の製造方法、並びに記憶素子および記憶装置
US8759809B2 (en) 2010-10-21 2014-06-24 Micron Technology, Inc. Integrated circuitry comprising nonvolatile memory cells having platelike electrode and ion conductive material layer
US8796661B2 (en) 2010-11-01 2014-08-05 Micron Technology, Inc. Nonvolatile memory cells and methods of forming nonvolatile memory cell
US8526213B2 (en) 2010-11-01 2013-09-03 Micron Technology, Inc. Memory cells, methods of programming memory cells, and methods of forming memory cells
US9454997B2 (en) 2010-12-02 2016-09-27 Micron Technology, Inc. Array of nonvolatile memory cells having at least five memory cells per unit cell, having a plurality of the unit cells which individually comprise three elevational regions of programmable material, and/or having a continuous volume having a combination of a plurality of vertically oriented memory cells and a plurality of horizontally oriented memory cells; array of vertically stacked tiers of nonvolatile memory cells
US8431458B2 (en) 2010-12-27 2013-04-30 Micron Technology, Inc. Methods of forming a nonvolatile memory cell and methods of forming an array of nonvolatile memory cells
US8791447B2 (en) 2011-01-20 2014-07-29 Micron Technology, Inc. Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
US8488365B2 (en) 2011-02-24 2013-07-16 Micron Technology, Inc. Memory cells
US8537592B2 (en) 2011-04-15 2013-09-17 Micron Technology, Inc. Arrays of nonvolatile memory cells and methods of forming arrays of nonvolatile memory cells
EP2608210B1 (en) * 2011-12-23 2019-04-17 IMEC vzw Stacked RRAM array with integrated transistor selector
US9070770B2 (en) 2013-08-27 2015-06-30 International Business Machines Corporation Low interfacial defect field effect transistor
US9224866B2 (en) 2013-08-27 2015-12-29 Globalfoundries Inc. Suspended body field effect transistor
KR101508971B1 (ko) * 2014-04-22 2015-04-08 서울대학교산학협력단 재구성 가능한 전자 소자 및 이의 동작 방법
US9472281B1 (en) 2015-06-30 2016-10-18 HGST Netherlands B.V. Non-volatile memory with adjustable cell bit shape
KR102452826B1 (ko) * 2015-11-10 2022-10-12 삼성전자주식회사 메모리 장치
US10797238B2 (en) 2016-01-26 2020-10-06 Arm Ltd. Fabricating correlated electron material (CEM) devices
US10211398B2 (en) 2017-07-03 2019-02-19 Arm Ltd. Method for the manufacture of a correlated electron material device
KR102731931B1 (ko) * 2018-12-21 2024-11-21 삼성전자주식회사 융합 메모리 소자 및 그 제조 방법
KR102706732B1 (ko) * 2019-04-08 2024-09-19 에스케이하이닉스 주식회사 전자 장치 및 그 제조 방법
US11164610B1 (en) 2020-06-05 2021-11-02 Qualcomm Incorporated Memory device with built-in flexible double redundancy
US11545202B2 (en) 2021-04-30 2023-01-03 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit design and layout with high embedded memory density

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102553A (ja) * 1999-09-29 2001-04-13 Sony Corp 半導体装置、その駆動方法および製造方法
US6801448B2 (en) * 2002-11-26 2004-10-05 Sharp Laboratories Of America, Inc. Common bit/common source line high density 1T1R R-RAM array
JP2004221546A (ja) * 2002-12-27 2004-08-05 Sharp Corp 半導体記憶装置及び携帯電子機器
KR100773537B1 (ko) * 2003-06-03 2007-11-07 삼성전자주식회사 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법
US7064970B2 (en) * 2003-11-04 2006-06-20 Micron Technology, Inc. Serial transistor-cell array architecture
JP2005203463A (ja) * 2004-01-14 2005-07-28 Sharp Corp 不揮発性半導体記憶装置
EP1587137A1 (en) * 2004-04-16 2005-10-19 International Business Machines Corporation Deposition process for non-volatile resistance switching memory
US7015535B2 (en) 2004-05-04 2006-03-21 Oki Electric Industry Co., Ltd. Nonvolatile semiconductor memory device
JP2006024868A (ja) 2004-07-09 2006-01-26 Oki Electric Ind Co Ltd 半導体不揮発性メモリセルアレイとその製造方法
KR100652378B1 (ko) * 2004-09-08 2006-12-01 삼성전자주식회사 안티몬 프리커서 및 이를 이용한 상변화 메모리 소자의 제조방법

Similar Documents

Publication Publication Date Title
JP5160116B2 (ja) 不揮発性メモリ素子
KR101744758B1 (ko) 비휘발성 메모리요소 및 이를 포함하는 메모리소자
TW589753B (en) Resistance random access memory and method for fabricating the same
US7863598B2 (en) Nonvolatile memory device
US9105838B2 (en) Nonvolatile variable resistive device
JP4491870B2 (ja) 不揮発性メモリの駆動方法
US8248837B2 (en) Nonvolatile semiconductor memory device and reading method of nonvolatile semiconductor memory device
US9190454B2 (en) Memory device
US20070103963A1 (en) Non-volatile memory devices and method thereof
US20150255511A1 (en) Nonvolatile memory device
KR20120021539A (ko) 비휘발성 메모리요소 및 이를 포함하는 메모리소자
US20140124728A1 (en) Resistive memory device, resistive memory array, and method of manufacturing resistive memory device
US20070176264A1 (en) Resistive random access memory device including an amorphous solid electrolyte layer
JP2009033177A5 (cg-RX-API-DMAC10.html)
US9831288B2 (en) Integrated circuit cointegrating a FET transistor and a RRAM memory point
CN101728412A (zh) 电阻式存储器单元和电阻式存储器阵列
KR20120010050A (ko) 비휘발성 메모리요소 및 이를 포함하는 메모리소자
KR101507028B1 (ko) 3차원 고체상태 메모리를 위한 고전류 가능한 액세스 장치
CN1790719A (zh) 包括一电阻器和一晶体管的非易失存储器件
KR20120139082A (ko) 멀티비트 메모리요소, 이를 포함하는 메모리소자 및 이들의 제조방법
WO2016130134A1 (en) Multilayered memristors
US7636251B2 (en) Methods of operating a non-volatile memory device
US20150262671A1 (en) Non-volatile memory device
JP2008021968A (ja) 不揮発性メモリ素子の動作方法
JP2006253679A (ja) Ｎｏｒ構造のハイブリッドマルチビットの不揮発性メモリ素子及びその動作方法