JP2007294678A - 太陽電池電極用導電性ペースト - Google Patents
太陽電池電極用導電性ペースト Download PDFInfo
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- JP2007294678A JP2007294678A JP2006120835A JP2006120835A JP2007294678A JP 2007294678 A JP2007294678 A JP 2007294678A JP 2006120835 A JP2006120835 A JP 2006120835A JP 2006120835 A JP2006120835 A JP 2006120835A JP 2007294678 A JP2007294678 A JP 2007294678A
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- conductive paste
- solar cell
- electrode
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- type semiconductor
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- 239000002245 particle Substances 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 150000001875 compounds Chemical class 0.000 claims abstract description 22
- 239000011521 glass Substances 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 15
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 13
- 229910052738 indium Inorganic materials 0.000 claims abstract description 13
- 239000011230 binding agent Substances 0.000 claims abstract description 12
- 239000002904 solvent Substances 0.000 claims abstract description 12
- -1 acetylacetone metal complex Chemical class 0.000 claims description 18
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 5
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Natural products CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 claims description 5
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 5
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 4
- 150000002902 organometallic compounds Chemical class 0.000 claims description 4
- 239000011787 zinc oxide Substances 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 3
- 229910001887 tin oxide Inorganic materials 0.000 claims description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 2
- 239000005751 Copper oxide Substances 0.000 claims description 2
- 235000021314 Palmitic acid Nutrition 0.000 claims description 2
- 235000021355 Stearic acid Nutrition 0.000 claims description 2
- 229910000431 copper oxide Inorganic materials 0.000 claims description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 claims description 2
- IPCSVZSSVZVIGE-UHFFFAOYSA-N n-hexadecanoic acid Natural products CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 claims description 2
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 2
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 claims description 2
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000008117 stearic acid Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 18
- 239000010408 film Substances 0.000 description 12
- 238000009792 diffusion process Methods 0.000 description 9
- 229910044991 metal oxide Inorganic materials 0.000 description 9
- 150000004706 metal oxides Chemical class 0.000 description 9
- 238000010304 firing Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 229910052716 thallium Inorganic materials 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 125000005594 diketone group Chemical group 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000002003 electrode paste Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- DAFHKNAQFPVRKR-UHFFFAOYSA-N (3-hydroxy-2,2,4-trimethylpentyl) 2-methylpropanoate Chemical compound CC(C)C(O)C(C)(C)COC(=O)C(C)C DAFHKNAQFPVRKR-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- RUJPNZNXGCHGID-UHFFFAOYSA-N (Z)-beta-Terpineol Natural products CC(=C)C1CCC(C)(O)CC1 RUJPNZNXGCHGID-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 239000000020 Nitrocellulose Substances 0.000 description 1
- 229910020617 PbO—B2O3—SiO2 Inorganic materials 0.000 description 1
- 229920002319 Poly(methyl acrylate) Polymers 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- 229940088601 alpha-terpineol Drugs 0.000 description 1
- LIQDVINWFSWENU-UHFFFAOYSA-K aluminum;prop-2-enoate Chemical compound [Al+3].[O-]C(=O)C=C.[O-]C(=O)C=C.[O-]C(=O)C=C LIQDVINWFSWENU-UHFFFAOYSA-K 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 229920001220 nitrocellulos Polymers 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 125000004437 phosphorous atom Chemical group 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- QJVXKWHHAMZTBY-GCPOEHJPSA-N syringin Chemical compound COC1=CC(\C=C\CO)=CC(OC)=C1O[C@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 QJVXKWHHAMZTBY-GCPOEHJPSA-N 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
【解決手段】有機バインダと、溶剤と、導電性粒子と、ガラスフリットと、Al、Ga、In又はTlを含む化合物とを含有する、ことを特徴とする太陽電池電極用導電性ペーストである。
【選択図】なし
Description
(i)Bi2O3、B2O3、SiO2を含有するガラスフリットを配合した導電性ペースト(特許文献1)。
(ii)Ti、Zn、Y等の金属やその化合物を0.001〜0.1μmの微細な粒子として添加した導電性ペースト(特許文献2)。
(iii)Ti、Bi、Co、Zr、Fe、Crを含む導電性ペースト(特許文献3)。
(iv)ハロゲン化物を添加した導電性ペースト(特許文献4)。
有機バインダと溶剤は、導電性ペーストの粘度調整等の役割を担うものであり、いずれも特に限定されない。有機バインダを溶剤に溶解させて使用することもできる。
導電性粒子は、特に限定されず、例えば、Ag、Cu、Ni等が挙げられる。空気中でも焼成できるため、Agが好ましい。導電性粒子の形状・平均粒子寸法は、特に限定されず、当該分野で公知のものを使用することができる。導電性粒子の形状としては、球状、リン片状、等が挙げられる。導電性粒子の平均粒子寸法は、作業性の点等から、0.05〜10μmが好ましく、好ましくは0.1〜5μmである。なお、平均粒子寸法とは、球状の場合は粒子径、りん片状の場合は粒子薄片の長径、針状の場合は長さのそれぞれ平均をいう。
ガラスフリットは、特に限定されず、Pb系ガラスフリット、例えばPbO−B2O3-SiO2系等;Pbフリー系ガラスフリット、例えばBi2O3−B2O3−SiO2−CeO2−LiO2−NaO2系等が挙げられる。ガラスフリットの形状・大きさは、特に限定されず、当該分野で公知のものを使用することができる。ガラスフリットの形状としては、球状、不定形等が挙げられる。ガラスフリットの平均粒子寸法は、作業性の点等から、0.01〜10μmが挙げられ、好ましくは0.05〜1μmである。平均粒子寸法は、上記のとおりであるが、不定形の場合は、最長の径のそれぞれ平均をいう。
本発明の導電性ペーストは、Al、Ga、In又はTlを含む化合物を含有する。これらの化合物は、単独でも、2種以上併用してもよい。
本発明の導電性ペーストには、酸化亜鉛、酸化チタン、酸化スズ、酸化銅又は酸化ニッケルを併用すると、高いFFを得る上で効果的である。これら特定の金属酸化物は、単独でも、2種以上を併用してもよい。
2 反射防止膜
3 N型拡散層
4 P型シリコン基板
5 裏面電極
Claims (8)
- 有機バインダと、溶剤と、導電性粒子と、ガラスフリットと、Al、Ga、In又はTlを含む化合物とを含有する、ことを特徴とする太陽電池電極用導電性ペースト。
- N型半導体上の電極を形成するための、請求項1記載の導電性ペースト。
- 化合物が、酸化物、水酸化物又は有機金属化合物である、請求項1又は2記載の導電性ペースト。
- 有機金属化合物が、アセチルアセトン金属錯体、アセト酢酸金属錯体、ジエチルマロン酸エステル金属錯体、シクロペンタジエン錯体、ナフテン酸金属化合物、オクチル酸金属化合物、ステアリン酸金属化合物及びパルミチン酸金属化合物である、請求項3記載の導電性ペースト。
- さらに、酸化亜鉛、酸化チタン、酸化スズ、酸化銅又は酸化ニッケルを含有する、請求項1〜4のいずれか1項記載の導電性ペースト。
- 請求項1〜5のいずれか1項記載の導電性ペーストを焼成してなる太陽電池のN型半導体上の電極。
- 請求項6記載の電極をN型半導体上に備えた太陽電池。
- 請求項1〜5のいずれか1項記載の導電性ペーストをN型半導体上に塗布し、場合により乾燥させた後、焼成して電極を形成する、太陽電池の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006120835A JP4714634B2 (ja) | 2006-04-25 | 2006-04-25 | 太陽電池電極用導電性ペースト |
CN200780015032.7A CN101432890B (zh) | 2006-04-25 | 2007-04-24 | 太阳电池电极用导电胶 |
EP07742209A EP2015367A4 (en) | 2006-04-25 | 2007-04-24 | ELECTRO-CONDUCTIVE PASTE FOR A SOLAR BATTERY ELECTRODE |
US12/226,504 US20090095344A1 (en) | 2006-04-25 | 2007-04-24 | Conductive Paste for Solar Cell Electrode |
PCT/JP2007/058774 WO2007125879A1 (ja) | 2006-04-25 | 2007-04-24 | 太陽電池電極用導電性ペースト |
TW096114612A TWI405219B (zh) | 2006-04-25 | 2007-04-25 | Conductive adhesive for solar cell electrodes |
US13/308,901 US20120067417A1 (en) | 2006-04-25 | 2011-12-01 | Solar cell and method for manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006120835A JP4714634B2 (ja) | 2006-04-25 | 2006-04-25 | 太陽電池電極用導電性ペースト |
Publications (2)
Publication Number | Publication Date |
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JP2007294678A true JP2007294678A (ja) | 2007-11-08 |
JP4714634B2 JP4714634B2 (ja) | 2011-06-29 |
Family
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Family Applications (1)
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JP2006120835A Active JP4714634B2 (ja) | 2006-04-25 | 2006-04-25 | 太陽電池電極用導電性ペースト |
Country Status (1)
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Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009124148A (ja) * | 2007-11-14 | 2009-06-04 | Gigastorge Corp | 太陽電池 |
JP2011035035A (ja) * | 2009-07-30 | 2011-02-17 | Noritake Co Ltd | 太陽電池電極用導電性組成物 |
KR101053913B1 (ko) * | 2008-10-22 | 2011-08-04 | 에스에스씨피 주식회사 | 도전성 페이스트 조성물 및 이를 이용한 태양 전지용 전극 제조방법 |
WO2011125655A1 (ja) * | 2010-04-02 | 2011-10-13 | 株式会社ノリタケカンパニーリミテド | 太陽電池用ペースト組成物およびその製造方法ならびに太陽電池 |
KR101189623B1 (ko) | 2008-02-19 | 2012-10-10 | 주식회사 엘지화학 | 실리콘 태양전지의 전면전극 형성용 금속 페이스트 조성물및 그 제조 방법과 이를 포함하는 실리콘 태양전지 |
TWI482291B (zh) * | 2008-05-07 | 2015-04-21 | Gigastorage Corp | 一種太陽能電池用之導電膠 |
JP2020071997A (ja) * | 2018-10-31 | 2020-05-07 | 横浜ゴム株式会社 | 導電性ペースト及び太陽電池 |
CN114262157A (zh) * | 2021-12-21 | 2022-04-01 | 广州市儒兴科技股份有限公司 | 一种玻璃粉组合物及其制备方法与应用 |
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JPH06203626A (ja) * | 1993-01-06 | 1994-07-22 | Asahi Chem Ind Co Ltd | 低温焼成可能な導電性ペースト |
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CN114262157A (zh) * | 2021-12-21 | 2022-04-01 | 广州市儒兴科技股份有限公司 | 一种玻璃粉组合物及其制备方法与应用 |
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