JP2007294514A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2007294514A
JP2007294514A JP2006117720A JP2006117720A JP2007294514A JP 2007294514 A JP2007294514 A JP 2007294514A JP 2006117720 A JP2006117720 A JP 2006117720A JP 2006117720 A JP2006117720 A JP 2006117720A JP 2007294514 A JP2007294514 A JP 2007294514A
Authority
JP
Japan
Prior art keywords
insulating film
lower electrode
interlayer insulating
film
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006117720A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007294514A5 (https=
Inventor
Yuichi Kono
祐一 河野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2006117720A priority Critical patent/JP2007294514A/ja
Priority to US11/733,975 priority patent/US20070246799A1/en
Publication of JP2007294514A publication Critical patent/JP2007294514A/ja
Publication of JP2007294514A5 publication Critical patent/JP2007294514A5/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/495—Capacitive arrangements or effects of, or between wiring layers
    • H10W20/496—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/062—Manufacture or treatment of conductive parts of the interconnections by smoothing of conductive parts, e.g. by planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/47—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising two or more dielectric layers having different properties, e.g. different dielectric constants

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2006117720A 2006-04-21 2006-04-21 半導体装置 Pending JP2007294514A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006117720A JP2007294514A (ja) 2006-04-21 2006-04-21 半導体装置
US11/733,975 US20070246799A1 (en) 2006-04-21 2007-04-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006117720A JP2007294514A (ja) 2006-04-21 2006-04-21 半導体装置

Publications (2)

Publication Number Publication Date
JP2007294514A true JP2007294514A (ja) 2007-11-08
JP2007294514A5 JP2007294514A5 (https=) 2009-05-14

Family

ID=38618698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006117720A Pending JP2007294514A (ja) 2006-04-21 2006-04-21 半導体装置

Country Status (2)

Country Link
US (1) US20070246799A1 (https=)
JP (1) JP2007294514A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300676A (ja) * 2007-05-31 2008-12-11 Rohm Co Ltd 半導体装置およびその製造方法
JP7197001B2 (ja) * 2019-05-13 2022-12-27 株式会社村田製作所 キャパシタ
CN114203442B (zh) * 2021-12-03 2023-11-03 灿芯半导体(上海)股份有限公司 一种用于高精度电容阵列的电容单元
US12588224B2 (en) * 2022-11-17 2026-03-24 Microchip Technology Incorporated Metal-insulator-metal (MIM) capacitors with curved electrode
DE112023004797T5 (de) * 2022-11-17 2025-09-11 Microchip Technology Incorporated Metall-isolator-metall (mim)-kondensatoren mit gekrümmter elektrode

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061349A (ja) * 1992-06-12 1994-01-11 Kawasaki Steel Corp 溶接缶胴を有する缶体
JP2000164812A (ja) * 1998-11-27 2000-06-16 Sharp Corp 半導体装置及びその製造方法
JP2004022694A (ja) * 2002-06-14 2004-01-22 Renesas Technology Corp 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6504205B1 (en) * 2001-06-15 2003-01-07 Silicon Integrated Systems Corp. Metal capacitors with damascene structures
JP4076131B2 (ja) * 2002-06-07 2008-04-16 富士通株式会社 半導体装置の製造方法
JP2004079924A (ja) * 2002-08-22 2004-03-11 Renesas Technology Corp 半導体装置
US6867447B2 (en) * 2003-05-20 2005-03-15 Texas Instruments Incorporated Ferroelectric memory cell and methods for fabricating the same
US6876028B1 (en) * 2003-09-30 2005-04-05 International Business Machines Corporation Metal-insulator-metal capacitor and method of fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061349A (ja) * 1992-06-12 1994-01-11 Kawasaki Steel Corp 溶接缶胴を有する缶体
JP2000164812A (ja) * 1998-11-27 2000-06-16 Sharp Corp 半導体装置及びその製造方法
JP2004022694A (ja) * 2002-06-14 2004-01-22 Renesas Technology Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US20070246799A1 (en) 2007-10-25

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