JP2007294514A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2007294514A
JP2007294514A JP2006117720A JP2006117720A JP2007294514A JP 2007294514 A JP2007294514 A JP 2007294514A JP 2006117720 A JP2006117720 A JP 2006117720A JP 2006117720 A JP2006117720 A JP 2006117720A JP 2007294514 A JP2007294514 A JP 2007294514A
Authority
JP
Japan
Prior art keywords
insulating film
lower electrode
interlayer insulating
film
diameter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006117720A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007294514A5 (enExample
Inventor
Yuichi Kono
祐一 河野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Technology Corp
Original Assignee
Renesas Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Technology Corp filed Critical Renesas Technology Corp
Priority to JP2006117720A priority Critical patent/JP2007294514A/ja
Priority to US11/733,975 priority patent/US20070246799A1/en
Publication of JP2007294514A publication Critical patent/JP2007294514A/ja
Publication of JP2007294514A5 publication Critical patent/JP2007294514A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H01L23/5223—Capacitor integral with wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/692—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53228—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H01L23/53238—Additional layers associated with copper layers, e.g. adhesion, barrier, cladding layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H01L23/53295—Stacked insulating layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2006117720A 2006-04-21 2006-04-21 半導体装置 Pending JP2007294514A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2006117720A JP2007294514A (ja) 2006-04-21 2006-04-21 半導体装置
US11/733,975 US20070246799A1 (en) 2006-04-21 2007-04-11 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006117720A JP2007294514A (ja) 2006-04-21 2006-04-21 半導体装置

Publications (2)

Publication Number Publication Date
JP2007294514A true JP2007294514A (ja) 2007-11-08
JP2007294514A5 JP2007294514A5 (enExample) 2009-05-14

Family

ID=38618698

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006117720A Pending JP2007294514A (ja) 2006-04-21 2006-04-21 半導体装置

Country Status (2)

Country Link
US (1) US20070246799A1 (enExample)
JP (1) JP2007294514A (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008300676A (ja) * 2007-05-31 2008-12-11 Rohm Co Ltd 半導体装置およびその製造方法
JP7197001B2 (ja) * 2019-05-13 2022-12-27 株式会社村田製作所 キャパシタ
CN114203442B (zh) * 2021-12-03 2023-11-03 灿芯半导体(上海)股份有限公司 一种用于高精度电容阵列的电容单元
US20240170529A1 (en) * 2022-11-17 2024-05-23 Microchip Technology Incorporated Metal-insulator-metal (mim) capacitors with curved electrode
DE112023004797T5 (de) * 2022-11-17 2025-09-11 Microchip Technology Incorporated Metall-isolator-metall (mim)-kondensatoren mit gekrümmter elektrode

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061349A (ja) * 1992-06-12 1994-01-11 Kawasaki Steel Corp 溶接缶胴を有する缶体
JP2000164812A (ja) * 1998-11-27 2000-06-16 Sharp Corp 半導体装置及びその製造方法
JP2004022694A (ja) * 2002-06-14 2004-01-22 Renesas Technology Corp 半導体装置の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6504205B1 (en) * 2001-06-15 2003-01-07 Silicon Integrated Systems Corp. Metal capacitors with damascene structures
JP4076131B2 (ja) * 2002-06-07 2008-04-16 富士通株式会社 半導体装置の製造方法
JP2004079924A (ja) * 2002-08-22 2004-03-11 Renesas Technology Corp 半導体装置
US6867447B2 (en) * 2003-05-20 2005-03-15 Texas Instruments Incorporated Ferroelectric memory cell and methods for fabricating the same
US6876028B1 (en) * 2003-09-30 2005-04-05 International Business Machines Corporation Metal-insulator-metal capacitor and method of fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH061349A (ja) * 1992-06-12 1994-01-11 Kawasaki Steel Corp 溶接缶胴を有する缶体
JP2000164812A (ja) * 1998-11-27 2000-06-16 Sharp Corp 半導体装置及びその製造方法
JP2004022694A (ja) * 2002-06-14 2004-01-22 Renesas Technology Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
US20070246799A1 (en) 2007-10-25

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