JP2007150301A - 半導体装置およびその製造方法 - Google Patents
半導体装置およびその製造方法 Download PDFInfo
- Publication number
- JP2007150301A JP2007150301A JP2006312571A JP2006312571A JP2007150301A JP 2007150301 A JP2007150301 A JP 2007150301A JP 2006312571 A JP2006312571 A JP 2006312571A JP 2006312571 A JP2006312571 A JP 2006312571A JP 2007150301 A JP2007150301 A JP 2007150301A
- Authority
- JP
- Japan
- Prior art keywords
- via hole
- semiconductor device
- lower wiring
- wiring
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/425—Barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
- H10W20/034—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics bottomless barrier, adhesion or liner layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
- H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
- H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/064—Manufacture or treatment of conductive parts of the interconnections by modifying the conductivity of conductive parts, e.g. by alloying
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050113818A KR100714476B1 (ko) | 2005-11-25 | 2005-11-25 | 반도체 장치 및 그 제조 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007150301A true JP2007150301A (ja) | 2007-06-14 |
| JP2007150301A5 JP2007150301A5 (https=) | 2010-01-14 |
Family
ID=38086643
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006312571A Pending JP2007150301A (ja) | 2005-11-25 | 2006-11-20 | 半導体装置およびその製造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US7482684B2 (https=) |
| JP (1) | JP2007150301A (https=) |
| KR (1) | KR100714476B1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7122898B1 (en) * | 2005-05-09 | 2006-10-17 | International Business Machines Corporation | Electrical programmable metal resistor |
| KR100714476B1 (ko) * | 2005-11-25 | 2007-05-07 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
| JP5498751B2 (ja) * | 2009-10-05 | 2014-05-21 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| TW201532247A (zh) | 2013-10-16 | 2015-08-16 | 康佛森智財管理公司 | 形成嵌入動態隨機存取記憶體電容器的成本效益佳的方法 |
| US9997457B2 (en) * | 2013-12-20 | 2018-06-12 | Intel Corporation | Cobalt based interconnects and methods of fabrication thereof |
| CN113140501B (zh) * | 2020-01-17 | 2024-10-15 | 长鑫存储技术有限公司 | 半导体器件及其制备方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0342837A (ja) * | 1989-07-11 | 1991-02-25 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPH11330235A (ja) * | 1998-05-11 | 1999-11-30 | Sony Corp | 半導体装置の絶縁層加工方法および半導体装置の絶縁層加工装置 |
| JPH11340234A (ja) * | 1998-05-29 | 1999-12-10 | Matsushita Electron Corp | 半導体装置の製造方法 |
| JP2001093976A (ja) * | 1999-09-21 | 2001-04-06 | Nec Corp | 半導体装置およびその製造方法 |
| JP2004349609A (ja) * | 2003-05-26 | 2004-12-09 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| JP2006270080A (ja) * | 2005-02-25 | 2006-10-05 | Toshiba Corp | 半導体装置及びその製造方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6100184A (en) * | 1997-08-20 | 2000-08-08 | Sematech, Inc. | Method of making a dual damascene interconnect structure using low dielectric constant material for an inter-level dielectric layer |
| KR100385227B1 (ko) | 2001-02-12 | 2003-05-27 | 삼성전자주식회사 | 구리 다층 배선을 가지는 반도체 장치 및 그 형성방법 |
| KR100413828B1 (ko) | 2001-12-13 | 2004-01-03 | 삼성전자주식회사 | 반도체 장치 및 그 형성방법 |
| KR100402428B1 (ko) * | 2001-12-18 | 2003-10-17 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성 방법 |
| JP2003249547A (ja) * | 2002-02-22 | 2003-09-05 | Mitsubishi Electric Corp | 配線間の接続構造及びその製造方法 |
| KR20060001313A (ko) * | 2004-06-30 | 2006-01-06 | 주식회사 하이닉스반도체 | 반도체 소자의 금속 배선 형성 방법 |
| KR100714476B1 (ko) * | 2005-11-25 | 2007-05-07 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
-
2005
- 2005-11-25 KR KR1020050113818A patent/KR100714476B1/ko not_active Expired - Fee Related
-
2006
- 2006-11-02 US US11/591,762 patent/US7482684B2/en active Active
- 2006-11-20 JP JP2006312571A patent/JP2007150301A/ja active Pending
-
2008
- 2008-12-16 US US12/336,028 patent/US7629239B2/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0342837A (ja) * | 1989-07-11 | 1991-02-25 | Seiko Epson Corp | 半導体装置の製造方法 |
| JPH11330235A (ja) * | 1998-05-11 | 1999-11-30 | Sony Corp | 半導体装置の絶縁層加工方法および半導体装置の絶縁層加工装置 |
| JPH11340234A (ja) * | 1998-05-29 | 1999-12-10 | Matsushita Electron Corp | 半導体装置の製造方法 |
| JP2001093976A (ja) * | 1999-09-21 | 2001-04-06 | Nec Corp | 半導体装置およびその製造方法 |
| JP2004349609A (ja) * | 2003-05-26 | 2004-12-09 | Renesas Technology Corp | 半導体装置およびその製造方法 |
| JP2006270080A (ja) * | 2005-02-25 | 2006-10-05 | Toshiba Corp | 半導体装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US7629239B2 (en) | 2009-12-08 |
| US20090098730A1 (en) | 2009-04-16 |
| KR100714476B1 (ko) | 2007-05-07 |
| US7482684B2 (en) | 2009-01-27 |
| US20070120242A1 (en) | 2007-05-31 |
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