JP2007123879A - Cmosイメージセンサ - Google Patents
Cmosイメージセンサ Download PDFInfo
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- JP2007123879A JP2007123879A JP2006286697A JP2006286697A JP2007123879A JP 2007123879 A JP2007123879 A JP 2007123879A JP 2006286697 A JP2006286697 A JP 2006286697A JP 2006286697 A JP2006286697 A JP 2006286697A JP 2007123879 A JP2007123879 A JP 2007123879A
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- gate pattern
- photodiode
- floating node
- transistor
- image sensor
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- 230000005540 biological transmission Effects 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 230000008054 signal transmission Effects 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 101100328521 Schizosaccharomyces pombe (strain 972 / ATCC 24843) cnt6 gene Proteins 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 101000685663 Homo sapiens Sodium/nucleoside cotransporter 1 Proteins 0.000 description 2
- 102100023116 Sodium/nucleoside cotransporter 1 Human genes 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 101000821827 Homo sapiens Sodium/nucleoside cotransporter 2 Proteins 0.000 description 1
- 102100021541 Sodium/nucleoside cotransporter 2 Human genes 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14641—Electronic components shared by two or more pixel-elements, e.g. one amplifier shared by two pixel elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
【解決手段】本発明に係るCMOSイメージセンサは、フォトダイオードと、該フォトダイオードの一側面に接する伝達トランジスタのゲートパターンと、該伝達トランジスタのゲートパターンと所定間隔離れて配置された駆動トランジスタのゲートパターンと、前記伝達トランジスタのゲートパターンと前記駆動トランジスタのゲートパターンとの間に配置されたフローティングノードとを備える。
【選択図】図8
Description
TX1、TX2 伝達トランジスタのゲートパターン
DX 駆動トランジスタのゲートパターン
RX リセットトランジスタのゲートパターン
SX 選択トランジスタのゲートパターン
CT1〜CT4 アクティブ領域に接続されるコンタクト
CNT1〜CNT6 ゲートパターンに接続されるコンタクト
M2A〜M2C 金属配線
ACTIVE1、ACTIVE2 アクティブ領域
Claims (10)
- フォトダイオードと、
該フォトダイオードの一側面に接する伝達トランジスタのゲートパターンと、
該伝達トランジスタのゲートパターンと所定間隔離れて配置された駆動トランジスタのゲートパターンと、
前記伝達トランジスタのゲートパターンと前記駆動トランジスタのゲートパターンとの間に配置されたフローティングノードと
を備えることを特徴とするCMOSイメージセンサ。 - 前記駆動トランジスタのゲートパターンと前記フローティングノードとに共通して接するバッティングコンタクトをさらに備えることを特徴とする請求項1に記載のCMOSイメージセンサ。
- 基板にフォトダイオードを形成するステップと、
該フォトダイオードと所定間隔離れた領域にフローティングノードを形成するステップと、
前記フォトダイオードと前記フローティングノードの一側面との間に伝達トランジスタのゲートパターンを形成するステップと、
前記フローティングノードの他側面に接する駆動トランジスタのゲートパターンを形成するステップと、
前記伝達トランジスタのゲートパターンと前記駆動トランジスタのゲートパターンとを覆うことができるように絶縁膜を形成するステップと、
該絶縁膜を選択的に除去して、前記駆動トランジスタのゲートパターンの所定領域と前記フローティングノードの所定領域とを露出させるコンタクトホールを形成するステップと、
該コンタクトホールを導電性物質で埋め込んでコンタクトプラグを形成するステップと
を含むことを特徴とするCMOSイメージセンサの製造方法。 - 第1フォトダイオード及び第2フォトダイオードと、
該第1フォトダイオード及び第2フォトダイオードの間に配置されたフローティングノードと、
前記第1フォトダイオードと前記フローティングノードとの間に配置された第1伝達トランジスタのゲートパターンと、
前記第2フォトダイオードと前記フローティングノードとの間に配置された第2伝達トランジスタのゲートパターンと、
前記フローティングノードと所定間隔離れて配置された駆動トランジスタのゲートパターンと、
前記フローティングノードに接続された第1コンタクトと、
前記駆動トランジスタのゲートパターンに接続された第2コンタクトと、
前記第1コンタクトと第2コンタクトとを接続する配線と
を備えることを特徴とするCMOSイメージセンサ。 - 第1フォトダイオード及び第2フォトダイオードと、
該第1フォトダイオード及び第2フォトダイオードの間に配置されたフローティングノードと、
前記第1フォトダイオードと前記フローティングノードとの間に配置された第1伝達トランジスタのゲートパターンと、
前記第2フォトダイオードと前記フローティングノードとの間に配置された第2伝達トランジスタのゲートパターンと、
前記フローティングノードと一定の部分が重なるように配置された駆動トランジスタのゲートパターンと、
前記フローティングノードと前記駆動トランジスタのゲートパターンとの全てに接するように配置されたコンタクトと
を備えることを特徴とするCMOSイメージセンサ。 - 前記駆動トランジスタのアクティブ領域を共有する選択トランジスタをさらに備えることを特徴とする請求項4又は5に記載のCMOSイメージセンサ。
- 前記選択トランジスタは、逆「コ」の字状を有することを特徴とする請求項6に記載のCMOSイメージセンサ。
- 前記駆動トランジスタのアクティブ領域から独立して分離されたアクティブ領域を有するリセットトランジスタをさらに備えることを特徴とする請求項6に記載のCMOSイメージセンサ。
- 前記駆動トランジスタのゲートパターンの一部は、前記駆動トランジスタのアクティブ領域と前記リセットトランジスタのアクティブ領域との間に形成されたことを特徴とする請求項8に記載のCMOSイメージセンサ。
- 前記駆動トランジスタのアクティブ領域及び前記リセットトランジスタのアクティブ領域は、それぞれ前記第1フォトダイオード、前記第2フォトダイオード、及び前記フローティングノードから分離されたことを特徴とする請求項8に記載のCMOSイメージセンサ。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050100741A KR100690169B1 (ko) | 2005-10-25 | 2005-10-25 | 시모스 이미지센서 |
KR10-2005-0100741 | 2005-10-25 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007123879A true JP2007123879A (ja) | 2007-05-17 |
JP5335186B2 JP5335186B2 (ja) | 2013-11-06 |
Family
ID=37984532
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006286697A Active JP5335186B2 (ja) | 2005-10-25 | 2006-10-20 | Cmosイメージセンサ |
Country Status (5)
Country | Link |
---|---|
US (2) | US7652314B2 (ja) |
JP (1) | JP5335186B2 (ja) |
KR (1) | KR100690169B1 (ja) |
CN (2) | CN101937924B (ja) |
TW (1) | TWI325173B (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100849825B1 (ko) * | 2007-03-14 | 2008-07-31 | 동부일렉트로닉스 주식회사 | 이미지센서 및 그 제조방법 |
US8579632B2 (en) * | 2008-02-14 | 2013-11-12 | Infomotion Sports Technologies, Inc. | Electronic analysis of athletic performance |
KR20100036033A (ko) * | 2008-09-29 | 2010-04-07 | 크로스텍 캐피탈, 엘엘씨 | 트랜지스터, 이를 구비한 이미지 센서 및 그의 제조방법 |
US8742309B2 (en) | 2011-01-28 | 2014-06-03 | Aptina Imaging Corporation | Imagers with depth sensing capabilities |
US10015471B2 (en) | 2011-08-12 | 2018-07-03 | Semiconductor Components Industries, Llc | Asymmetric angular response pixels for single sensor stereo |
US9554115B2 (en) * | 2012-02-27 | 2017-01-24 | Semiconductor Components Industries, Llc | Imaging pixels with depth sensing capabilities |
US8741117B2 (en) | 2012-09-27 | 2014-06-03 | Intel Corporation | Device and method for detecting redox reactions in solution |
US9222908B2 (en) | 2012-09-27 | 2015-12-29 | Intel Corporation | Device and method for detecting redox reactions in solution |
KR102414030B1 (ko) * | 2015-11-18 | 2022-06-29 | 에스케이하이닉스 주식회사 | 이미지 센서 |
TWI707481B (zh) * | 2019-03-08 | 2020-10-11 | 力晶積成電子製造股份有限公司 | 影像感測器及其製造方法 |
KR20210000600A (ko) * | 2019-06-25 | 2021-01-05 | 에스케이하이닉스 주식회사 | 이미지 센서 |
KR20210132364A (ko) * | 2020-04-27 | 2021-11-04 | 에스케이하이닉스 주식회사 | 이미지 센서 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000152086A (ja) * | 1998-11-11 | 2000-05-30 | Canon Inc | 撮像装置および撮像システム |
JP2002368203A (ja) * | 2001-06-05 | 2002-12-20 | Sony Corp | 固体撮像素子 |
JP2004336004A (ja) * | 2003-04-30 | 2004-11-25 | Hynix Semiconductor Inc | Cmosイメージセンサの単位画素 |
JP2004336016A (ja) * | 2003-04-30 | 2004-11-25 | Hynix Semiconductor Inc | Cmosイメージセンサの単位画素 |
JP2004335582A (ja) * | 2003-05-01 | 2004-11-25 | Canon Inc | 光電変換装置 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE469800B (sv) * | 1989-01-20 | 1993-09-13 | Termofrost Sweden Ab | Dörrbladsprofil |
US6107655A (en) * | 1997-08-15 | 2000-08-22 | Eastman Kodak Company | Active pixel image sensor with shared amplifier read-out |
KR100495413B1 (ko) * | 2003-04-30 | 2005-06-14 | 매그나칩 반도체 유한회사 | 씨모스 이미지 센서의 단위화소 및 그 제조 방법 |
KR100525895B1 (ko) | 2003-04-30 | 2005-11-02 | 매그나칩 반도체 유한회사 | 씨모스 이미지 센서의 단위화소 |
KR100674925B1 (ko) * | 2004-12-07 | 2007-01-26 | 삼성전자주식회사 | 허니콤 구조의 능동 픽셀 센서 |
KR100695517B1 (ko) * | 2005-07-26 | 2007-03-14 | 삼성전자주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
-
2005
- 2005-10-25 KR KR1020050100741A patent/KR100690169B1/ko active IP Right Grant
-
2006
- 2006-10-20 JP JP2006286697A patent/JP5335186B2/ja active Active
- 2006-10-23 US US11/584,554 patent/US7652314B2/en not_active Expired - Fee Related
- 2006-10-25 CN CN2010102691862A patent/CN101937924B/zh active Active
- 2006-10-25 CN CN2006101499879A patent/CN1967857B/zh active Active
- 2006-10-25 TW TW095139282A patent/TWI325173B/zh active
-
2009
- 2009-12-08 US US12/633,435 patent/US8093636B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000152086A (ja) * | 1998-11-11 | 2000-05-30 | Canon Inc | 撮像装置および撮像システム |
JP2002368203A (ja) * | 2001-06-05 | 2002-12-20 | Sony Corp | 固体撮像素子 |
JP2004336004A (ja) * | 2003-04-30 | 2004-11-25 | Hynix Semiconductor Inc | Cmosイメージセンサの単位画素 |
JP2004336016A (ja) * | 2003-04-30 | 2004-11-25 | Hynix Semiconductor Inc | Cmosイメージセンサの単位画素 |
JP2004335582A (ja) * | 2003-05-01 | 2004-11-25 | Canon Inc | 光電変換装置 |
Also Published As
Publication number | Publication date |
---|---|
US7652314B2 (en) | 2010-01-26 |
US20070090423A1 (en) | 2007-04-26 |
TWI325173B (en) | 2010-05-21 |
TW200725878A (en) | 2007-07-01 |
CN1967857B (zh) | 2010-10-20 |
CN101937924A (zh) | 2011-01-05 |
CN1967857A (zh) | 2007-05-23 |
CN101937924B (zh) | 2012-07-04 |
US8093636B2 (en) | 2012-01-10 |
US20100127315A1 (en) | 2010-05-27 |
KR100690169B1 (ko) | 2007-03-08 |
JP5335186B2 (ja) | 2013-11-06 |
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