JP2007109969A5 - - Google Patents

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Publication number
JP2007109969A5
JP2007109969A5 JP2005300662A JP2005300662A JP2007109969A5 JP 2007109969 A5 JP2007109969 A5 JP 2007109969A5 JP 2005300662 A JP2005300662 A JP 2005300662A JP 2005300662 A JP2005300662 A JP 2005300662A JP 2007109969 A5 JP2007109969 A5 JP 2007109969A5
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JP
Japan
Prior art keywords
exposure method
pattern
hole pattern
contact hole
optical system
Prior art date
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Application number
JP2005300662A
Other languages
English (en)
Japanese (ja)
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JP2007109969A (ja
JP4750525B2 (ja
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Publication date
Application filed filed Critical
Priority to JP2005300662A priority Critical patent/JP4750525B2/ja
Priority claimed from JP2005300662A external-priority patent/JP4750525B2/ja
Priority to US11/549,279 priority patent/US7592130B2/en
Publication of JP2007109969A publication Critical patent/JP2007109969A/ja
Publication of JP2007109969A5 publication Critical patent/JP2007109969A5/ja
Priority to US12/539,963 priority patent/US7947433B2/en
Application granted granted Critical
Publication of JP4750525B2 publication Critical patent/JP4750525B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005300662A 2005-10-14 2005-10-14 露光方法及びデバイス製造方法 Expired - Fee Related JP4750525B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005300662A JP4750525B2 (ja) 2005-10-14 2005-10-14 露光方法及びデバイス製造方法
US11/549,279 US7592130B2 (en) 2005-10-14 2006-10-13 Exposure method
US12/539,963 US7947433B2 (en) 2005-10-14 2009-08-12 Exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005300662A JP4750525B2 (ja) 2005-10-14 2005-10-14 露光方法及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2007109969A JP2007109969A (ja) 2007-04-26
JP2007109969A5 true JP2007109969A5 (enExample) 2009-01-15
JP4750525B2 JP4750525B2 (ja) 2011-08-17

Family

ID=38035579

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005300662A Expired - Fee Related JP4750525B2 (ja) 2005-10-14 2005-10-14 露光方法及びデバイス製造方法

Country Status (2)

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US (2) US7592130B2 (enExample)
JP (1) JP4750525B2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100357864C (zh) * 2005-01-31 2007-12-26 深圳市证通电子股份有限公司 键盘加密方法
EP1857879A1 (en) * 2006-05-15 2007-11-21 Advanced Mask Technology Center GmbH & Co. KG An illumination system and a photolithography apparatus
NL1036123A1 (nl) * 2007-11-13 2009-05-14 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
JP4635085B2 (ja) 2008-03-03 2011-02-16 株式会社東芝 半導体装置の製造方法
JP2010199347A (ja) 2009-02-26 2010-09-09 Canon Inc 露光方法及びデバイス製造方法
JP5665398B2 (ja) 2009-08-10 2015-02-04 キヤノン株式会社 生成方法、作成方法、露光方法、デバイスの製造方法及びプログラム
JP5185235B2 (ja) 2009-09-18 2013-04-17 株式会社東芝 フォトマスクの設計方法およびフォトマスクの設計プログラム
JP5617256B2 (ja) * 2010-01-27 2014-11-05 株式会社ニコン 液晶表示素子の製造方法及び露光装置
US8739078B2 (en) * 2012-01-18 2014-05-27 International Business Machines Corporation Near-neighbor trimming of dummy fill shapes with built-in optical proximity corrections for semiconductor applications
JP2013201356A (ja) * 2012-03-26 2013-10-03 Toshiba Corp 露光方法及びパターン形成方法
KR102873061B1 (ko) * 2019-11-29 2025-10-16 삼성전자주식회사 포토리소그래피 방법
US20230139799A1 (en) * 2021-11-04 2023-05-04 Taiwan Semiconductor Manufacturing Company, Ltd. Pattern formation method and manufacturing method of semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3179520B2 (ja) * 1991-07-11 2001-06-25 株式会社日立製作所 半導体装置の製造方法
JP3323815B2 (ja) 1998-07-21 2002-09-09 キヤノン株式会社 露光方法及び露光装置
JP3983960B2 (ja) * 2000-07-14 2007-09-26 株式会社ルネサステクノロジ 半導体集積回路装置の製造方法および半導体集積回路装置
US6563566B2 (en) * 2001-01-29 2003-05-13 International Business Machines Corporation System and method for printing semiconductor patterns using an optimized illumination and reticle
JP3870093B2 (ja) 2002-01-08 2007-01-17 キヤノン株式会社 露光方法及び装置
JP3754934B2 (ja) 2002-04-23 2006-03-15 キヤノン株式会社 マスクパターン及び照明条件の設定方法
JP3958163B2 (ja) 2002-09-19 2007-08-15 キヤノン株式会社 露光方法
EP1429190B1 (en) 2002-12-10 2012-05-09 Canon Kabushiki Kaisha Exposure apparatus and method
US6800946B2 (en) * 2002-12-23 2004-10-05 Motorola, Inc Selective underfill for flip chips and flip-chip assemblies
TWI247339B (en) * 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
EP1450206B1 (en) 2003-02-21 2016-04-20 Canon Kabushiki Kaisha Mask and its manufacturing method, exposure, and semiconductor device fabrication method
JP4886169B2 (ja) 2003-02-21 2012-02-29 キヤノン株式会社 マスク及びその設計方法、露光方法、並びに、デバイス製造方法
JP4684584B2 (ja) * 2003-07-23 2011-05-18 キヤノン株式会社 マスク及びその製造方法、並びに、露光方法
JP4612849B2 (ja) * 2005-03-01 2011-01-12 キヤノン株式会社 露光方法、露光装置及びデバイス製造方法

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