JP2007088322A - 半導体装置及びその製造方法 - Google Patents
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Abstract
【解決手段】 半導体装置は、半導体基板1の上部に互いに間隔をおいて形成されたソース領域8及びドレイン領域9と、半導体基板1におけるソース領域8及びドレイン領域9の間に形成されたチャネル領域10と、チャネル領域10の上に形成された第1の誘電体膜2と、第1の誘電体膜2の上に形成され、第1の誘電体膜2よりも高い誘電率を持つ第2の誘電体膜3と、第2の誘電体膜3におけるソース領域8側及びドレイン領域9側の各端面上に形成され、第2の誘電体膜3よりも低い誘電率を持つ第3の誘電体膜6と、第2の誘電体膜3及び第3の誘電体膜6の上に形成されたゲート電極5とを有している。
【選択図】 図1
Description
本発明の第1の実施形態について図面を参照しながら説明する。
以下、本発明の第1の実施形態の一変形例について図面を参照しながら説明する。
以下、本発明の第2の実施形態について図面を参照しながら説明する。
2 第1の誘電体膜
3 第2の誘電体(高誘電体膜)
4 ゲート絶縁膜
5 ゲート電極
5A 導電膜
5a 空隙
50 ゲート形成領域
6 第3の誘電体膜(低誘電体膜)
6a オフセットスペーサ膜
7 サイドウォール
8 ソース領域
8a エクステンション領域
9 ドレイン領域
9a エクステンション領域
10 チャネル領域
11 犠牲酸化膜
12 レジストパターン
22 第1のレジストパターン
23 第2のレジストパターン
Claims (13)
- 半導体基板と、
前記半導体基板の上部に互いに間隔をおいて形成されたソース領域及びドレイン領域と、
前記半導体基板における前記ソース領域及びドレイン領域の間に形成されたチャネル領域と、
前記半導体基板の前記チャネル領域の上に形成された第1の誘電体膜と、
前記第1の誘電体膜の上に形成され、前記第1の誘電体膜よりも高い誘電率を有する第2の誘電体膜と、
前記第2の誘電体膜における前記ソース領域側の端面及びドレイン領域側の端面のうち少なくとも前記ドレイン領域側の端面上に形成され、前記第2の誘電体膜よりも低い誘電率を有する第3の誘電体膜と、
前記第2の誘電体膜及び第3の誘電体膜の上に形成されたゲート電極とを備えていることを特徴とする半導体装置。 - 前記第3の誘電体膜は、前記ゲート電極の側面上にも形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記ゲート電極と前記半導体基板との間に位置する前記第3の誘電体膜の膜厚は、前記第1の誘電体膜の膜厚と前記第2の誘電体膜の膜厚との和よりも大きいことを特徴とする請求項1又は2に記載の半導体装置。
- 前記ソース領域における前記チャネル領域側の端部及び前記ドレイン領域における前記チャネル領域側の端部のうち少なくとも前記ドレイン領域における前記チャネル領域側の端部は、前記ゲート電極の下方で且つ前記第3の誘電体膜の下側に位置することを特徴とする請求項1〜3のいずれか1項に記載の半導体装置。
- 前記第2の誘電体膜は、酸化ハフニウム、酸化ジルコニウム及び酸化アルミニウムのうちの少なくとも1つを含むことを特徴とする請求項1〜4のいずれか1項に記載の半導体装置。
- 前記第3の誘電体膜は、酸素及び窒素のうちの少なくとも一方とシリコンとを含むことを特徴とする請求項1〜5のいずれか1項に記載の半導体装置。
- 半導体基板の上に、第1の誘電体膜と該第1の誘電体膜よりも高い誘電率を有する第2の誘電体膜を順次形成する工程(a)と、
前記第2の誘電体膜の上にゲート電極を形成する工程(b)と、
前記工程(b)よりも後に、前記ゲート電極におけるゲート長方向側の両端部のうちの少なくとも一方の端部の下側に位置する前記第2の誘電体膜をエッチングすることにより、前記ゲート電極の端部と前記半導体基板との間に空隙を形成する工程(c)と、
前記空隙に、前記第2の誘電体膜よりも低い誘電率を有する第3の誘電体膜を形成する工程(d)と、
前記工程(d)よりも後に、前記半導体基板における前記ゲート電極の両側方の領域に前記ゲート電極をマスクとしてイオン注入を行なうことにより、ソース領域及びドレイン領域をそれぞれ形成する工程(e)とを備えていることを特徴とする半導体装置の製造方法。 - 前記工程(c)において、前記空隙は、前記第2の誘電体膜における少なくともドレイン領域を形成する側の端部に形成することを特徴とする請求項7に記載の半導体装置の製造方法。
- 前記工程(c)において、前記空隙の下側に位置する前記第1の誘電体膜をもエッチングすることを特徴とする請求項7又は8に記載の半導体装置の製造方法。
- 前記工程(c)において、前記空隙の下側に位置する前記半導体基板の上部をもエッチングすることを特徴とする請求項9に記載の半導体装置の製造方法。
- 前記工程(a)において、前記第2の誘電体膜には、酸化ハフニウム、酸化ジルコニウム及び酸化アルミニウムのうちの少なくとも1つを含む誘電体を用いることを特徴とする請求項7〜10のいずれか1項に記載の半導体装置。
- 前記工程(d)において、前記第3の誘電体膜には、酸素及び窒素のうちの少なくとも一方とシリコンとを含む誘電体を用いることを特徴とする請求項7〜11のいずれか1項に記載の半導体装置の製造方法。
- 前記工程(d)において、前記第3の誘電体膜を形成する際に、前記ゲート電極の側面上に、前記第3の誘電体膜からなるオフセットスペーサを形成することを特徴とする請求項7〜12のいずれか1項に記載の半導体装置の製造方法。
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JP2005277166A JP2007088322A (ja) | 2005-09-26 | 2005-09-26 | 半導体装置及びその製造方法 |
US11/438,385 US7750396B2 (en) | 2005-09-26 | 2006-05-23 | Semiconductor device and method for fabricating the same |
US12/753,501 US8035174B2 (en) | 2005-09-26 | 2010-04-02 | Semiconductor device and method for fabricating the same |
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CN114068690A (zh) * | 2020-07-29 | 2022-02-18 | 长鑫存储技术有限公司 | 半导体结构及其形成方法 |
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US9029132B2 (en) * | 2009-08-06 | 2015-05-12 | International Business Machines Corporation | Sensor for biomolecules |
US8052931B2 (en) | 2010-01-04 | 2011-11-08 | International Business Machines Corporation | Ultra low-power CMOS based bio-sensor circuit |
US9068935B2 (en) | 2010-04-08 | 2015-06-30 | International Business Machines Corporation | Dual FET sensor for sensing biomolecules and charged ions in an electrolyte |
CN102655168A (zh) * | 2011-03-04 | 2012-09-05 | 中国科学院微电子研究所 | 栅极结构及其制造方法 |
CN113795980A (zh) * | 2019-05-24 | 2021-12-14 | 3M创新有限公司 | 具有介电常数梯度的雷达反射制品 |
US10686486B1 (en) * | 2019-07-02 | 2020-06-16 | Newport Fab, Llc | Radio frequency (RF) switch with improved power handling |
US11387338B1 (en) * | 2021-01-22 | 2022-07-12 | Applied Materials, Inc. | Methods for forming planar metal-oxide-semiconductor field-effect transistors |
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US20070069285A1 (en) | 2007-03-29 |
US8035174B2 (en) | 2011-10-11 |
US20100187645A1 (en) | 2010-07-29 |
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