JP5040286B2 - 半導体装置および半導体装置の製造方法 - Google Patents
半導体装置および半導体装置の製造方法 Download PDFInfo
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- JP5040286B2 JP5040286B2 JP2006336269A JP2006336269A JP5040286B2 JP 5040286 B2 JP5040286 B2 JP 5040286B2 JP 2006336269 A JP2006336269 A JP 2006336269A JP 2006336269 A JP2006336269 A JP 2006336269A JP 5040286 B2 JP5040286 B2 JP 5040286B2
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- Engineering & Computer Science (AREA)
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
前記シリコン基板上、前記第2のチャネル領域に対応して第2のゲート絶縁膜を介して形成され、対向する1対の側壁面上に1対の第2の側壁絶縁膜をそれぞれ担持する第2のゲート電極と、前記シリコン基板中、前記第2のゲート電極の両側に前記第1のチャネル領域を挟んでそれぞれ形成された、第2のソース領域および第2のドレイン領域と、を有する、前記NMOSトランジスタとともに1対で用いられるPMOSトランジスタと、を備え、前記第2の側壁絶縁膜と前記シリコン基板との距離が、前記第1の側壁絶縁膜と前記シリコン基板との距離よりも大きくなるように構成されていることを特徴とする半導体装置により、解決する。
(付記1)
シリコン基板に形成される第1のチャネル領域と、
前記シリコン基板上、前記第1のチャネル領域に対応して第1のゲート絶縁膜を介して形成され、対向する1対の側壁面上に1対の第1の側壁絶縁膜をそれぞれ担持する第1のゲート電極と、
前記シリコン基板中、前記第1のゲート電極の両側に前記第1のチャネル領域を挟んでそれぞれ形成された、第1のソース領域および第1のドレイン領域と、を有するNMOSトランジスタと、
前記シリコン基板に形成される第2のチャネル領域と、
前記シリコン基板上、前記第2のチャネル領域に対応して第2のゲート絶縁膜を介して形成され、対向する1対の側壁面上に1対の第2の側壁絶縁膜をそれぞれ担持する第2のゲート電極と、
前記シリコン基板中、前記第2のゲート電極の両側に前記第1のチャネル領域を挟んでそれぞれ形成された、第2のソース領域および第2のドレイン領域と、を有する、前記NMOSトランジスタとともに1対で用いられるPMOSトランジスタと、を備え、
前記第2の側壁絶縁膜と前記シリコン基板との距離が、前記第1の側壁絶縁膜と前記シリコン基板との距離よりも大きくなるように構成されていることを特徴とする半導体装置。
(付記2)
前記第1の側壁絶縁膜および前記第2の側壁絶縁膜は、プラスの固定電荷を含んでいることを特徴とする付記1記載の半導体装置。
(付記3)
前記シリコン基板中、前記1対の第2の側壁絶縁膜の直下には、前記第2のソース領域に連続するソースエクステンション領域と前記第2のドレイン領域に連続するドレインエクステンション領域とがそれぞれ形成されていることを特徴とする付記1または2記載の半導体装置。
(付記4)
前記シリコン基板中、前記1対の第1の側壁絶縁膜の直下には、前記第1のチャネル領域と連続する、該チャネル領域と同じ導電型のチャネル近傍領域がそれぞれ形成されていることを特徴とする付記1乃至3のいずれか1項記載の半導体装置。
(付記5)
前記チャネル近傍領域には、前記1対の第1の側壁絶縁膜に含まれる固定電荷によって反転層が形成されていることを特徴とする付記4記載の半導体装置。
(付記6)
前記1対の第2の側壁絶縁膜と前記シリコン基板との間には、該1対の第2の側壁絶縁膜と該シリコン基板とを離間させる緩衝層が形成されていることを特徴とする付記1乃至5のいずれか1項記載の半導体装置。
(付記7)
前記緩衝層はシリコン酸化膜よりなることを特徴とする付記6記載の半導体装置。
(付記8)
前記緩衝層の厚さは5乃至20nmであることを特徴とする付記7記載の半導体装置。
(付記9)
前記1対の第1の側壁絶縁膜と前記シリコン基板との間に形成されるシリコン酸化膜の厚さは3nm以下とされることを特徴とする付記8記載の半導体装置。
(付記10)
前記緩衝層はSiGe層よりなることを特徴とする付記6記載の半導体装置。
(付記11)
前記SiGe層は、前記1対の第2の側壁絶縁膜のそれぞれの直下から、前記第2のソース領域および前記第2のドレイン領域にかけてそれぞれ広がるように形成されていることを特徴とする付記10記載の半導体装置。
(付記12)
前記SiGe層には、前記第2のソース領域および前記第2のドレイン領域と同じ導電型となる不純物が添加されることを特徴とする付記11記載の半導体装置。
(付記13)
前記第1のソース領域近傍と前記第1のドレイン領域近傍にそれぞれ形成される第1のポケット領域の距離が、前記第2のソース領域近傍と前記第2のドレイン領域近傍にそれぞれ形成される第2のポケット領域の距離よりも大きいことを特徴とする付記1乃至12のいずれか1項記載の半導体装置。
(付記14)
前記第1の側壁絶縁膜および前記第2の側壁絶縁膜は、シリコンと窒素を主成分とすることを特徴とする付記1乃至13のいずれか1項記載の半導体装置。
(付記15)
前記第1の側壁絶縁膜と前記第2の側壁絶縁膜は、各々応力の極性の異なる絶縁膜でそれぞれ覆われていることを特徴とする付記1乃至14のいずれか1項記載の半導体装置。
(付記16)
前記第1のゲート絶縁膜と前記シリコン基板の界面に対して前記第1のソース領域および前記第1のドレイン領域の表面が凹んで形成されていることを特徴とする付記1乃至15のいずれか1項記載の半導体装置。
(付記17)
シリコン基板の第1のチャネル領域に対応する第1のゲート絶縁膜上の第1のゲート電極と、該シリコン基板上の第2のチャネル領域上の第2のゲート絶縁膜上の第2のゲート電極とをそれぞれ形成する工程と、
前記第2のゲート電極をマスクにして該第2のゲート電極の両側の前記シリコン基板中に、1対のP型拡散領域を形成する工程と、
前記シリコン基板上の前記第1のゲート電極の両側に第1の絶縁膜を、前記シリコン基板上の前記第2のゲート電極の両側に第2の絶縁膜をそれぞれ形成する工程と、
前記第1の絶縁膜をエッチングする工程と、
前記第1のゲート電極の対向する1対の側壁面上に1対の第1の側壁絶縁膜を、前記第2のゲート電極の対向する1対の側壁面上に1対の第2の側壁絶縁膜をそれぞれ形成する工程と、
前記第1のゲート電極と前記1対の第1の側壁絶縁膜をマスクにして、該1対の第1の側壁絶縁膜の両側のシリコン基板中に、1対のN型拡散領域を形成する工程と、
前記第2のゲート電極と前記1対の第2の側壁絶縁膜をマスクにして、該1対の第2の側壁絶縁膜の両側のシリコン基板中に、別の1対のP型拡散領域を形成する工程と、
を有することを特徴とする半導体装置の製造方法。
(付記18)
前記第1の側壁絶縁膜と前記第2の側壁絶縁膜は、シリコンと窒素を主成分として形成されることを特徴とする付記17記載の半導体装置の製造方法。
(付記19)
前記第1の絶縁膜および前記第2の絶縁膜は、シリコン酸化膜であることを特徴とする付記18記載の半導体装置の製造方法。
(付記20)
前記第1の絶縁膜をエッチング後に前記シリコン基板を、Nを構成元素として含むガスによりアニールする工程をさらに有することを特徴とする付記19記載の半導体装置の製造方法。
(付記21)
前記ガスはアンモニアよりなり、前記アニールの温度は650乃至1100℃であることを特徴とする付記20記載の半導体装置の製造方法。
(付記22)
前記別の1対のP型拡散領域と、前記1対のP型拡散領域上の前記第2の絶縁膜とをエッチングして空隙を形成する工程と、
前記空隙にエピタキシャル成長によって、SiGe層を埋設する工程と、を有することを特徴とする付記17乃至21のいずれか1項記載の半導体装置の製造方法。
(付記23)
前記第1の側壁絶縁膜と前記第2の側壁絶縁膜とをそれぞれ覆う、各々応力の極性の異なる絶縁膜を形成する工程を有することを特徴とする付記17乃至22のいずれか1項記載の半導体装置の製造方法。
100,200,300 MOSトランジスタ
101 半導体基板
102 素子分離絶縁膜
103,203 ウェル
104,204 チャネル領域
105,205 ゲート絶縁膜
106,206 ゲート電極
107A,107B,207A,207B 側壁絶縁膜
108,108A,108B,209 ソース領域
109,109A,109B,208 ドレイン領域
110,111,210,211 ポケット領域
112,113 チャネル近傍領域
212,213 エクステンション領域
114,115,116,214,215,216 シリサイド層
117,118 絶縁層
218A,218B 緩衝層
220,220A,220B,221,221A,221B SiGe層
Claims (9)
- シリコン基板に形成される第1のチャネル領域と、
前記シリコン基板上、前記第1のチャネル領域に対応して第1のゲート絶縁膜を介して形成され、対向する1対の側壁面上に1対の第1の側壁絶縁膜をそれぞれ担持する第1のゲート電極と、
前記シリコン基板中、前記第1のゲート電極の両側に前記第1のチャネル領域を挟んでそれぞれ形成された、第1のソース領域および第1のドレイン領域と、を有するNMOSトランジスタと、
前記シリコン基板に形成される第2のチャネル領域と、
前記シリコン基板上、前記第2のチャネル領域に対応して第2のゲート絶縁膜を介して形成され、対向する1対の側壁面上に1対の第2の側壁絶縁膜をそれぞれ担持する第2のゲート電極と、
前記シリコン基板中、前記第2のゲート電極の両側に前記第1のチャネル領域を挟んでそれぞれ形成された、第2のソース領域および第2のドレイン領域と、を有するPMOSトランジスタと、を備え、
前記第1の側壁絶縁膜および前記第2の側壁絶縁膜は、プラスの固定電荷を含んでおり、
前記第2の側壁絶縁膜と前記シリコン基板との距離が、前記第1の側壁絶縁膜と前記シリコン基板との距離よりも大きくなるように構成されていることを特徴とする半導体装置。 - 前記シリコン基板中、前記1対の第2の側壁絶縁膜の直下には、前記第2のソース領域に連続するソースエクステンション領域と前記第2のドレイン領域に連続するドレインエクステンション領域とがそれぞれ形成されていることを特徴とする請求項1記載の半導体装置。
- 前記シリコン基板中、前記1対の第1の側壁絶縁膜の直下には、前記第1のチャネル領域と連続する、該チャネル領域と同じ導電型のチャネル近傍領域がそれぞれ形成されていることを特徴とする請求項1または2記載の半導体装置。
- 前記チャネル近傍領域には、前記1対の第1の側壁絶縁膜に含まれる固定電荷によって反転層が形成されていることを特徴とする請求項3記載の半導体装置。
- 前記1対の第2の側壁絶縁膜と前記シリコン基板との間には、該1対の第2の側壁絶縁膜と該シリコン基板とを離間させる緩衝層が形成されていることを特徴とする請求項1乃至4のいずれか1項記載の半導体装置。
- 前記緩衝層はSiGe層よりなることを特徴とする請求項5記載の半導体装置。
- シリコン基板の第1のチャネル領域に対応する第1のゲート絶縁膜上の第1のゲート電極と、該シリコン基板上の第2のチャネル領域上の第2のゲート絶縁膜上の第2のゲート電極とをそれぞれ形成する工程と、
前記第2のゲート電極をマスクにして該第2のゲート電極の両側の前記シリコン基板中に、1対のP型拡散領域を形成する工程と、
前記シリコン基板上の前記第1のゲート電極の両側に第1の絶縁膜を、前記シリコン基板上の前記第2のゲート電極の両側に第2の絶縁膜をそれぞれ形成する工程と、
前記第1の絶縁膜をエッチングする工程と、
前記第1のゲート電極の対向する1対の側壁面上に1対の第1の側壁絶縁膜を、前記第2のゲート電極の対向する1対の側壁面上に1対の第2の側壁絶縁膜をそれぞれ形成する工程であり、該第1の側壁絶縁膜および該第2の側壁絶縁膜はプラスの固定電荷を含んでいる、工程と、
前記第1のゲート電極と前記1対の第1の側壁絶縁膜をマスクにして、該1対の第1の側壁絶縁膜の両側のシリコン基板中に、1対のN型拡散領域を形成する工程と、
前記第2のゲート電極と前記1対の第2の側壁絶縁膜をマスクにして、該1対の第2の側壁絶縁膜の両側のシリコン基板中に、別の1対のP型拡散領域を形成する工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記第1の絶縁膜をエッチング後に前記シリコン基板を、Nを構成元素として含むガスによりアニールする工程をさらに有することを特徴とする請求項7記載の半導体装置の製造方法。
- 前記ガスはアンモニアよりなり、前記アニールの温度は650乃至1100℃であることを特徴とする請求項8記載の半導体装置の製造方法。
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US6946709B2 (en) * | 2003-12-02 | 2005-09-20 | International Business Machines Corporation | Complementary transistors having different source and drain extension spacing controlled by different spacer sizes |
JP4713078B2 (ja) * | 2003-12-15 | 2011-06-29 | シャープ株式会社 | 半導体装置の製造方法および半導体装置 |
JP4723182B2 (ja) * | 2003-12-15 | 2011-07-13 | シャープ株式会社 | 半導体装置およびその製造方法 |
US6972222B2 (en) * | 2004-01-09 | 2005-12-06 | Taiwan Semiconductor Manufacturing Company | Temporary self-aligned stop layer is applied on silicon sidewall |
JP2006120801A (ja) * | 2004-10-20 | 2006-05-11 | Renesas Technology Corp | 半導体装置及びその製造方法 |
JP2006216604A (ja) * | 2005-02-01 | 2006-08-17 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
US7429775B1 (en) * | 2005-03-31 | 2008-09-30 | Xilinx, Inc. | Method of fabricating strain-silicon CMOS |
KR100739246B1 (ko) * | 2005-04-11 | 2007-07-12 | 주식회사 하이닉스반도체 | 반도체 소자의 소스/드레인영역 형성방법 |
JP4490336B2 (ja) * | 2005-06-13 | 2010-06-23 | シャープ株式会社 | 半導体装置およびその製造方法 |
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KR100949752B1 (ko) | 2010-03-25 |
US7906798B2 (en) | 2011-03-15 |
US8481383B2 (en) | 2013-07-09 |
KR20080055660A (ko) | 2008-06-19 |
JP2008147597A (ja) | 2008-06-26 |
US20080142838A1 (en) | 2008-06-19 |
US20110136307A1 (en) | 2011-06-09 |
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