JP2007072437A - 電界発光表示装置 - Google Patents
電界発光表示装置 Download PDFInfo
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- JP2007072437A JP2007072437A JP2006156345A JP2006156345A JP2007072437A JP 2007072437 A JP2007072437 A JP 2007072437A JP 2006156345 A JP2006156345 A JP 2006156345A JP 2006156345 A JP2006156345 A JP 2006156345A JP 2007072437 A JP2007072437 A JP 2007072437A
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- 238000005401 electroluminescence Methods 0.000 title abstract description 5
- 150000002500 ions Chemical class 0.000 claims description 89
- 239000000758 substrate Substances 0.000 claims description 85
- 239000012535 impurity Substances 0.000 claims description 40
- 239000010408 film Substances 0.000 description 25
- 229910021417 amorphous silicon Inorganic materials 0.000 description 11
- 230000001681 protective effect Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- 238000009825 accumulation Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000565 sealant Substances 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 2
- 238000007429 general method Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003230 hygroscopic agent Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/18—Light sources with substantially two-dimensional radiating surfaces characterised by the nature or concentration of the activator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
Abstract
【解決手段】本発明は、ドレーン電極137とソース電極136との間のアクティブ層135に導電型イオンをドーピングすることにより、ドレーン電極137とソース電極136との間のチャンネルに形成される直列抵抗成分を低くして、電流の移動特性を高めて、速い応答特性を有する電界発光表示装置が実現できるようにする。
【選択図】図3
Description
図3は、本発明の実施の形態1に係る電界発光表示装置と駆動部の拡大図である。
図5は、本発明の実施の形態2に係る電界発光表示装置と駆動部の拡大図である。
図6は、本発明の実施の形態3に係る電界発光表示装置と駆動部の拡大図である。
図7は、本発明の実施の形態4に係る電界発光表示装置と駆動部の拡大図である。
Claims (7)
- 基板上に形成されたゲート電極と、
前記基板上に形成されて、前記ゲート電極の上面を覆いかぶせるように形成されたゲート絶縁膜層と、
前記ゲート絶縁膜層の上面を覆いかぶせるように形成されて、第1導電型不純物イオンでドーピングされたアクティブ層と、
前記アクティブ層のいずれか一側に形成されたソース電極及び他側に形成されたドレーン電極と、
前記ソース電極と前記ドレーン電極との間に表れたアクティブ層の一定領域が第2導電型不純物イオンでドーピングされたイオンドーピング領域と
を有する第1基板と、
基板上に形成された第1電極と、
前記第1電極上に形成された発光部と、
前記発光部に形成された第2電極と
を有する第2基板と、
前記第1基板の前記ドレーン電極と前記第2基板の前記第2電極とを電気的に連結する連結電極と
を含むことを特徴とする電界発光表示装置。 - 基板上に形成されて、中心部は、第1導電型不純物イオンでドーピングされ、その両側は、第2導電型不純物イオンでドーピングされたアクティブ層と、
前記アクティブ層の両側に形成されたソース電極及びドレーン電極と、
前記アクティブ層を覆いかぶせて、前記ソース電極及び前記ドレーン電極の所定領域が表れるようにコンタクトホールを形成して、前記基板上に形成された絶縁膜層と、
前記絶縁膜層上に形成されて、前記アクティブ層と対応するように形成されたゲート電極と
を有する第1基板と、
基板上に形成された第1電極と、
前記第1電極上に形成された発光部と、
前記発光部に形成された第2電極と
を有する第2基板と、
前記第1基板の前記ドレーン電極と前記第2基板の前記第2電極とを電気的に連結する連結電極と
を含むことを特徴とする電界発光表示装置。 - 基板上に形成されたゲート電極と、
前記基板上に形成されて、前記ゲート電極の上面を覆いかぶせるように形成されたゲート絶縁膜層と、
前記ゲート絶縁膜の上面を覆いかぶせるように形成されて、第1導電型不純物イオンでドーピングされたアクティブ層と、
前記アクティブ層の何れか一側に形成されたソース電極及び他側に形成されたドレーン電極と、
前記ソース電極と前記ドレーン電極との間に表れたアクティブ層の一定領域が第2導電型不純物イオンでドーピングされたイオンドーピング領域を有する駆動部と、
前記駆動部のドレーン電極と電気的に連結された第1電極と、
前記第1電極上に形成された発光部と、
前記発光部上に形成された第2電極と
を含むことを特徴とする電界発光表示装置。 - 基板上に形成されて、中心部は、第1導電型不純物イオンでドーピングされ、その両側は、第2導電型不純物イオンでドーピングされたアクティブ層と、
前記アクティブ層の両側に形成されたソース電極及びドレーン電極と、
前記アクティブ層を覆いかぶせて、前記ソース電極及び前記ドレーン電極の所定領域が表れるようにコンタクトホールを形成して、前記基板上に形成された絶縁膜層と、
前記絶縁膜層上に形成されて、前記アクティブ層と対応するように形成されたゲート電極を有する駆動部と、
前記駆動部のドレーン電極と電気的に連結された第1電極と、
前記第1電極上に形成された発光部と、
前記発光部上に形成された第2電極と
を含むことを特徴とする電界発光表示装置。 - 前記第1導電型不純物イオンは、n型でドーピングされ、
前記第2導電型不純物イオンは、p型でドーピングされた
ことを特徴とする請求項1ないし4のいずれか1項に記載の電界発光表示装置。 - 前記第1導電型不純物イオンは、p型でドーピングされ、
前記第2導電型不純物イオンは、n型でドーピングされた
ことを特徴とする請求項1ないし4のいずれか1項に記載の電界発光表示装置。 - 前記発光部は、有機発光層を含むことを特徴とする請求項1ないし4のいずれか1項に記載の電界発光表示装置。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020050082418A KR20070025845A (ko) | 2005-09-05 | 2005-09-05 | 빠른 응답특성을 갖는 전계발광 표시장치 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007072437A true JP2007072437A (ja) | 2007-03-22 |
Family
ID=37859434
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006156345A Pending JP2007072437A (ja) | 2005-09-05 | 2006-06-05 | 電界発光表示装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7655948B2 (ja) |
JP (1) | JP2007072437A (ja) |
KR (1) | KR20070025845A (ja) |
CN (1) | CN100486394C (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4600576B2 (ja) * | 2008-05-08 | 2010-12-15 | 株式会社デンソー | 半導体装置およびその製造方法 |
KR102071330B1 (ko) * | 2012-12-27 | 2020-01-30 | 엘지디스플레이 주식회사 | 유기 발광 표시 장치 및 유기 발광 표시 장치 제조 방법 |
KR102084229B1 (ko) * | 2013-04-02 | 2020-03-04 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 |
CN104465509B (zh) * | 2013-09-18 | 2017-08-04 | 昆山国显光电有限公司 | 一种oled显示器件阵列基板及其制备方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0864824A (ja) * | 1994-08-24 | 1996-03-08 | Toshiba Corp | 薄膜トランジスタおよびその製造方法 |
CN100502047C (zh) | 1996-06-28 | 2009-06-17 | 精工爱普生株式会社 | 薄膜晶体管 |
US6281552B1 (en) * | 1999-03-23 | 2001-08-28 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistors having ldd regions |
JP2001267578A (ja) | 2000-03-17 | 2001-09-28 | Sony Corp | 薄膜半導体装置及びその製造方法 |
JP4340405B2 (ja) | 2001-08-09 | 2009-10-07 | 富士フイルム株式会社 | 有機el素子の製造方法及び有機el素子 |
KR100435054B1 (ko) * | 2002-05-03 | 2004-06-07 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자와 그 제조방법 |
JP2004055461A (ja) * | 2002-07-23 | 2004-02-19 | Seiko Epson Corp | 発光装置及びその製造方法、並びに電子機器 |
KR100473590B1 (ko) * | 2002-07-25 | 2005-03-10 | 엘지.필립스 엘시디 주식회사 | 유기전계 발광소자와 그 제조방법 |
DE102004031109B4 (de) | 2003-12-30 | 2016-03-31 | Lg Display Co., Ltd. | Organisches Lumineszenzdisplay vom Doppeltafeltyp sowie Verfahren zum Herstellen desselben |
-
2005
- 2005-09-05 KR KR1020050082418A patent/KR20070025845A/ko not_active Application Discontinuation
-
2006
- 2006-06-05 JP JP2006156345A patent/JP2007072437A/ja active Pending
- 2006-06-14 CN CNB2006100918983A patent/CN100486394C/zh active Active
- 2006-06-19 US US11/455,517 patent/US7655948B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
CN1929707A (zh) | 2007-03-14 |
CN100486394C (zh) | 2009-05-06 |
KR20070025845A (ko) | 2007-03-08 |
US20070096111A1 (en) | 2007-05-03 |
US7655948B2 (en) | 2010-02-02 |
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