1225317 案號 92103123 五、發明說明（2) 層表面，並藉由覆蓋層之通孔與汲極電極產生電性連接； 進而將有機發光二極體元件結構覆蓋於透明導電層之表 面。然而，以上述結構所形成之主動矩陣驅動顯示器相較 於被動矩陣顯示器，其發光效率效率較低且漏電流較大。 由於對於大尺寸和高解析度顯示器的需求，有機發光 二極體顯示器的驅動技術需由被動驅動進展至主動矩陣驅 動技術，因此，如何在結構上作改變以提高發光效率和降 低漏電流（Leakage Current)，即成為有機發光二極體主 動矩陣顯示器之發展目標。 【發明内容】 為解決習知技術的問題，本發明提供一種有機發 極體顯示器的驅動元件結構及其製造方法。由被動^陣 (Pass: :atrix)驅動元件之結構得知，將直接製作於玻 =^，把夠降低漏電流（Leakage Current)情形並提高發 本發明的目的在於設計出一種新的主動矩陣驅動 ::構’利用簡單的製程步驟將像素電極直接製作於玻 %衣面。 驅動為ίit述’本發明之有機發光二極體顯示器的 接觸並’間皁地說，是使像素電極直接與玻璃基板 曰：並精由汲極導電接點使像素電極電性連接於薄膜電 日日肢的汲極區域。進一步說明之，本 乂 璃其士 G . ^ 4知/3之、、、吉構可包含玻 層“於ΐ Γ層 '薄膜電晶體與透明導電層；I中，中間 i域中ΪΪ:表面’並且覆蓋薄膜電晶體的源極和没極 没極導具有個別連接於源極和没極區域之源極和 明導電層直接y板接觸，並藉由汲極 1225317 月 曰 —修正 皇號921 fl彻 五、發明說明（3) 連接：汲極區域，透明導電層係用以作為像 ^ 相較於先前技術，本發明 /、、 發光效率之主動矩陣驅動顯示器。 的’本發明的結構可由較為押罝丄:結構製程的目 明之有牆私本一： 的製程步驟來達成。本發 步驟包含有：提供—基板；於基：：：；==法’其 體；提供—中間層以覆蓋薄建立缚版電晶 進行一光微旦彡γ , 、電日日體的源極和汲極區域； =先U衫耘序以形成個別連接於 孔與基板之接觸區域；填入 Ζ及柽g域之通 孔以形成源極和汲極區诚夕^ 2層於源極和汲極區域之通 使其透過基板之接觸：‘垃,接點；形成-透明導電層 猎由波極導電接點與汲極區域形成電性】接透：導電層並 之結構特性，使其製程步驟比先於本發明 明可藉由光微影技術蝕刻出通道，同時：：：；中’本發 至現有製程，而dit。利用本發明方法可輕易整合 A # n t而増添新的製程設備。 為使對本發明的目 了解，兹配合圖示詳細說明t特被及其功能有進一步的 【實施方式】 本發明揭露了 _链女η心 結構及其製造方法，二叙光二極體顯示器的驅動元件 低漏電流並提高發光效率，。、電極直接製作於玻璃表面以降 底、複晶矽層、絕緣緩衝 12253171225317 Case No. 92103123 V. Description of the invention (2) The surface of the layer is electrically connected to the drain electrode through the through hole of the cover layer; the organic light emitting diode element structure is covered on the surface of the transparent conductive layer. However, compared with the passive matrix display, the active matrix drive display formed with the above structure has lower luminous efficiency and larger leakage current. Due to the demand for large-size and high-resolution displays, the driving technology of organic light-emitting diode displays needs to progress from passive driving to active matrix driving technology. Therefore, how to make structural changes to improve luminous efficiency and reduce leakage current (Leakage Current), which has become the development goal of organic light emitting diode active matrix displays. SUMMARY OF THE INVENTION In order to solve the problems of the conventional technology, the present invention provides a driving element structure of an organic emitter display and a manufacturing method thereof. According to the structure of the passive element (Pass :: atrix) driving element, it will be directly manufactured on glass = ^, which can reduce the leakage current (Leakage Current) situation and improve the development of the invention. The purpose of the present invention is to design a new active matrix Drive :: Construct 'uses a simple process step to make the pixel electrode directly on the glass surface. The drive is described as "the contact of the organic light-emitting diode display of the present invention", and it is said that the pixel electrode is directly connected to the glass substrate, and the pixel electrode is electrically connected to the thin film electrode by the conductive contact of the drain electrode. Sun-dip limb region. To further clarify, the present invention G. ^ 4 knows / 3, and, the structure may include a glass layer "Yu Γ layer 'thin film transistor and a transparent conductive layer; in I, in the middle i domain ΪΪ: surface 'And the source and endless electrodes that cover the thin film transistor have the source connected to the source and endless regions individually and the bright conductive layer is in direct y-plate contact, and by the drain electrode 1225317 said—Amended 921 (1) Connection of the invention (3) Connection: The drain region and the transparent conductive layer are used as an image. Compared with the prior art, the present invention has an active matrix-driven display of luminous efficiency. The structure of the present invention can be More secure: The purpose of the structural process is to achieve the process of the private one: the process steps. This step includes: provide-substrate; Yu Ji :: ;; == law; its body; provide-the middle layer to Cover a thin plate to build a bond plate to perform a light micro-density, γ, the source and drain regions of the electric solar body; = first U-shirt sequence to form individual contact areas connected to the hole and the substrate; fill in Z and柽 g field through holes to form the source and drain regions The contact between the electrode and the drain region allows it to pass through the substrate: 'Large, contact; formation-transparent conductive layer hunting. The conductive contact between the wave electrode and the drain region forms electrical properties.] Passthrough: Structural characteristics of the conductive layer. Making the process steps earlier than the present invention, the channel can be etched by the photolithography technology, and at the same time :::; the present is sent to the existing process, and dit. Using the method of the present invention can easily integrate A # nt and add New process equipment. In order to understand the present invention, we will further explain the t special quilt and its function in conjunction with the drawings. [Embodiment] The present invention discloses a chain female core structure and its manufacturing method. The driving element of the polar display has low leakage current and improves luminous efficiency. The electrode is directly made on the glass surface to lower the bottom, the polycrystalline silicon layer, and the insulation buffer 1225317
_案號 92103m 五、發明說明（4) 層、隔離層、鬧搞、办Μ 分層疊而成。、透明導電層與覆蓋層幾個部 立图。並由: 圖，其為本發明第一實施例的示 思2八，絕緣基底係由玻璃基板1 〇與絕緣緩衝；s u所 J義有缚膜電晶體的汲極、源極和通道區. 夕層13 著此隔離層12設置於薄膜電晶體的通道區域」Π = ，層16覆盍閘極14表面。中間川與隔離川 =源極和汲極區域的兩個接觸… 孔 =以形成源極導電接點和汲極導電接點15。_Case No. 92103m V. Description of the Invention (4) Layers, isolation layers, juggling, and handling are divided into layers. , Transparent conductive layer and cover layer. And from: Figure, which is the first embodiment of the present invention Si Si 28, the insulating base is made of a glass substrate 1 0 and insulation buffer; Su Institute J means the drain, source and channel region of the film transistor. The evening layer 13 is disposed on the channel region of the thin film transistor with the isolation layer 12 ″, and the layer 16 covers the surface of the gate electrode 14. The middle channel and the isolated channel = the two contacts of the source and drain regions ... Hole = to form a source conductive contact and a drain conductive contact 15.
接ΐίί玻璃基板1〇接觸，並藉由沒極導電接點15 =極區域；覆蓋層3。則用以披覆中間層16 J 接點和汲極導電接點1 5。 —電 y，有機發光二極體元件結構可植入 :項端表…本發明所使用之複晶石夕層亦可利用:？： 明導電層可為氧化銦錫層。本發明除了 ：:二 =緣亦被覆蓋層所覆蓋，能有效降低透明導電 =5，進而減少像素電極之間以及像素電極盘： f之間的漏電☆。並且，用以作為絕緣與支樓的絕後：： 層與中間層，可選擇一般的半導P '、、、、‘ 、、 氮切等。‘ 1的“編象材料，如氧化石夕或 為更進一步說明本發明，以下詳 程，請參考第2圖，其為本發明實施例x 、衣“ :首先，提供表面覆蓋有絕 案號 五、發明說明（5) (步驟110);於维絡昆士 石夕層定義有薄膜電晶^表面植入複晶石夕層（步驟120)，複晶 蓋薄膜電晶體的源^ Λ、亟、汲極和通道區域；形成覆 130);定義間極(步H極區域之絕緣緩衝層（步驟 薄膜電晶體的通道區 其間隔著絕緣緩衝層形成於 驟1 5 0 );以光微旦《二二上方’形成覆蓋閑極的中間層（步 通孔與玻璃基板=接觫，f個別連接於源極和汲極區域之 域之通孔定義全ΐί Λ域（步驟16〇);於源極和没極區 之導電接點’·形成一透明）/=成源極和汲極區域 π朽道5二 觸（步驟180)，透明導電層係萨由 及極導電接點與汲極區域形成電性連接。 曰係措由 接q ^:^叙明之透明導電層可任意連接於由汲極導電 方或下方’請參考第3_，其為本 導以：二 思，’係將透明導電層連接於由汲極 冷電接點所延伸出的電極下方。Then connect the glass substrate 10 to each other, and the non-polar conductive contact 15 = the pole area; the cover layer 3. It is used to cover the intermediate layer 16 J contacts and the drain conductive contacts 15. —Electric y, organic light-emitting diode element structure can be implanted: head end table ... The polycrystalline stone layer used in the present invention can also be used:? The bright conductive layer may be an indium tin oxide layer. In addition to the two aspects of the present invention, the two edges are also covered by the cover layer, which can effectively reduce the transparent conductivity = 5, thereby reducing the leakage between the pixel electrodes and between the pixel electrode pads: f. In addition, it can be used as insulation and insulation of branch buildings: layer and middle layer, and general semiconductors P ', ,,,',, nitrogen cutting, etc. can be selected. "1" editing materials, such as oxidized stone or to further illustrate the present invention, the following detailed procedures, please refer to Figure 2, which is an embodiment of the present invention x, clothing ": First, the surface is provided with a case number V. Description of the invention (5) (Step 110); A thin film transistor is defined on the surface of the Weiluo Queensland stone layer ^ a polycrystalline stone layer is implanted on the surface (step 120), and the source of the polycrystalline cover thin film transistor ^ Λ, Forming the cap, drain, and channel regions; forming the cover 130); defining the interpole (the insulating buffer layer of the step H electrode region (the channel region of the step thin film transistor is formed in step 1 50 with the insulating buffer layer in between); Once "two above two" to form an intermediate layer covering the leisure electrode (step through hole and glass substrate = connection, f through holes individually connected to the source and drain region of the domain definition full ΐ Λ domain (step 16)); The conductive contacts at the source and non-electrode regions are formed into a transparent state) / = the source and drain regions are formed in two-way contact (step 180), and the transparent conductive layer is the conductive contact and the drain of the sayo and electrode regions. The electrode region forms an electrical connection. The transparent conductive layer described by the connection q ^: ^ can be arbitrarily connected to the conductive side of the drain or Below, please refer to Section 3_. This guide is based on the following considerations: “The transparent conductive layer is connected under the electrode extended from the cold electrode of the drain.
以限〜月之車乂么錢施例揭露如上所述，然其並非用 精神和範圍内，當可作此今夕^者在：離本發明之 =保“圍須視本說明書所附之申請專利範圍所界定J 1225317 案號 92103123 垄 月The limit is limited to the month of the car. The money is disclosed as described above, but it is not used within the spirit and scope. When this can be done, the person who is away from the present invention = guarantees depends on the application attached to this specification. Defined by the scope of patent J 1225317 Case No. 92103123 Long Moon
第2圖為本發明實施例的製造流程圖；及 第3圖為本發明第二實施例的示意圖。 【圖式符號說明】 1 0玻璃基板 11絕緣缓衝層 1 2隔離層 1 3複晶石夕層 1 4閘極 1 5沒極導電接點 1 6中間層 2 0透明導電層 30覆蓋層 步驟11 0 步驟1 2 0 步驟1 3 0 絕緣緩衝層 提供表面覆蓋有絕緣層之玻璃基板 於絕緣層表面植入複晶石夕層 形成覆蓋薄膜電晶體的源極和汲極區域之Fig. 2 is a manufacturing flowchart of an embodiment of the present invention; and Fig. 3 is a schematic diagram of a second embodiment of the present invention. [Illustration of Symbols] 1 0 Glass substrate 11 Insulation buffer layer 1 2 Isolation layer 1 3 Polycrystalline stone layer 1 4 Gate 1 5 Non-polar conductive contact 1 6 Intermediate layer 2 0 Transparent conductive layer 30 Covering step 11 0 Step 1 2 0 Step 1 3 0 The insulating buffer layer provides a glass substrate covered with an insulating layer on the surface of the insulating layer. A polycrystalline stone layer is implanted to form the source and drain regions of the thin film transistor.