JP2006526895A5 - - Google Patents

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Publication number
JP2006526895A5
JP2006526895A5 JP2006514212A JP2006514212A JP2006526895A5 JP 2006526895 A5 JP2006526895 A5 JP 2006526895A5 JP 2006514212 A JP2006514212 A JP 2006514212A JP 2006514212 A JP2006514212 A JP 2006514212A JP 2006526895 A5 JP2006526895 A5 JP 2006526895A5
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JP
Japan
Prior art keywords
composition
concentration
weight
corrosion inhibitor
sif
Prior art date
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Pending
Application number
JP2006514212A
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English (en)
Japanese (ja)
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JP2006526895A (ja
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Publication date
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Priority claimed from PCT/US2004/013588 external-priority patent/WO2004100245A1/en
Publication of JP2006526895A publication Critical patent/JP2006526895A/ja
Publication of JP2006526895A5 publication Critical patent/JP2006526895A5/ja
Pending legal-status Critical Current

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JP2006514212A 2003-05-02 2004-05-03 半導体処理におけるエッチング後の残留物の除去 Pending JP2006526895A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US46713403P 2003-05-02 2003-05-02
PCT/US2004/013588 WO2004100245A1 (en) 2003-05-02 2004-05-03 Removal of post-etch residues in semiconductor processing

Publications (2)

Publication Number Publication Date
JP2006526895A JP2006526895A (ja) 2006-11-24
JP2006526895A5 true JP2006526895A5 (enExample) 2007-07-05

Family

ID=33435028

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006514212A Pending JP2006526895A (ja) 2003-05-02 2004-05-03 半導体処理におけるエッチング後の残留物の除去

Country Status (7)

Country Link
US (1) US7479474B2 (enExample)
EP (1) EP1620882A1 (enExample)
JP (1) JP2006526895A (enExample)
KR (1) KR20060014388A (enExample)
CN (1) CN100442449C (enExample)
TW (1) TW200428512A (enExample)
WO (1) WO2004100245A1 (enExample)

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JP5009207B2 (ja) * 2007-09-21 2012-08-22 大日本スクリーン製造株式会社 基板処理装置
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US8398779B2 (en) * 2009-03-02 2013-03-19 Applied Materials, Inc. Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates
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WO2010127941A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
EP2427804B1 (en) 2009-05-07 2019-10-02 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
TWI516879B (zh) * 2009-09-09 2016-01-11 東友精細化工有限公司 形成銅系配線用光阻剝離劑組成物、使用其來製造半導體裝置及平板顯示器之方法
JP5646882B2 (ja) * 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
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MY171165A (en) * 2012-02-06 2019-09-28 Basf Se A post chemical-mechanical-polishing (post-cmp) cleaningb composition comprising a specific sulfur-containing compound and a sugar alcohol or a polycarboxyclic acid
US8951950B2 (en) * 2012-03-12 2015-02-10 Ekc Technology Aluminum post-etch residue removal with simultaneous surface passivation
EP2850495A4 (en) * 2012-05-18 2016-01-20 Entegris Inc COMPOSITION AND METHOD FOR REMOVING PHOTOLACK FROM A SURFACE WITH TITANNITRIDE
US9447365B2 (en) * 2012-07-27 2016-09-20 Applied Materials, Inc. Enhanced cleaning process of chamber used plasma spray coating without damaging coating
US9536730B2 (en) 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
US9472420B2 (en) 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal
US9222018B1 (en) 2014-07-24 2015-12-29 Air Products And Chemicals, Inc. Titanium nitride hard mask and etch residue removal
US10332784B2 (en) 2015-03-31 2019-06-25 Versum Materials Us, Llc Selectively removing titanium nitride hard mask and etch residue removal
US10109575B1 (en) * 2017-03-30 2018-10-23 International Business Machines Corporation Non-planar metal-insulator-metal capacitor formation
WO2019026677A1 (ja) * 2017-07-31 2019-02-07 三菱瓦斯化学株式会社 コバルト、アルミナ、層間絶縁膜、窒化シリコンのダメージを抑制した組成液及びこれを用いた洗浄方法
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CN108166002B (zh) * 2017-12-27 2020-01-07 吉林省电力科学研究院有限公司 一种适用于化学清洗的低温除油漂洗洗液及其使用工艺
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