TW200428512A - Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing - Google Patents

Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing Download PDF

Info

Publication number
TW200428512A
TW200428512A TW093112400A TW93112400A TW200428512A TW 200428512 A TW200428512 A TW 200428512A TW 093112400 A TW093112400 A TW 093112400A TW 93112400 A TW93112400 A TW 93112400A TW 200428512 A TW200428512 A TW 200428512A
Authority
TW
Taiwan
Prior art keywords
composition
weight
concentration
patent application
corrosion inhibitor
Prior art date
Application number
TW093112400A
Other languages
English (en)
Chinese (zh)
Inventor
Mihaela Cernat
Shihying Lee
Original Assignee
Ekc Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ekc Technology Inc filed Critical Ekc Technology Inc
Publication of TW200428512A publication Critical patent/TW200428512A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14—Nitrogen-containing compounds
    • C23F11/141—Amines; Quaternary ammonium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/167—Phosphorus-containing compounds
    • C23F11/1676—Phosphonic acids
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/173—Macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
    • C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
    • C23G1/061—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
    • C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
    • C23G1/04—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors
    • C23G1/06—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors
    • C23G1/066—Cleaning or pickling metallic material with solutions or molten salts with acid solutions using inhibitors organic inhibitors phosphorus-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
TW093112400A 2003-05-02 2004-05-03 Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing TW200428512A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46713403P 2003-05-02 2003-05-02

Publications (1)

Publication Number Publication Date
TW200428512A true TW200428512A (en) 2004-12-16

Family

ID=33435028

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093112400A TW200428512A (en) 2003-05-02 2004-05-03 Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing

Country Status (7)

Country Link
US (1) US7479474B2 (enExample)
EP (1) EP1620882A1 (enExample)
JP (1) JP2006526895A (enExample)
KR (1) KR20060014388A (enExample)
CN (1) CN100442449C (enExample)
TW (1) TW200428512A (enExample)
WO (1) WO2004100245A1 (enExample)

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1875325B (zh) 2003-10-29 2011-01-26 马林克罗特贝克公司 含有金属卤化物腐蚀抑制剂的碱性后等离子体蚀刻/灰化残余物去除剂和光致抗蚀剂剥离组合物
DE102004037089A1 (de) * 2004-07-30 2006-03-16 Advanced Micro Devices, Inc., Sunnyvale Technik zur Herstellung einer Passivierungsschicht vor dem Abscheiden einer Barrierenschicht in einer Kupfermetallisierungsschicht
KR101190907B1 (ko) * 2004-12-07 2012-10-12 가오 가부시키가이샤 박리제 조성물
JP4637010B2 (ja) * 2004-12-07 2011-02-23 花王株式会社 剥離剤組成物
KR20060064441A (ko) * 2004-12-08 2006-06-13 말린크로트 베이커, 인코포레이티드 비수성 비부식성 마이크로전자 세정 조성물
US7846349B2 (en) * 2004-12-22 2010-12-07 Applied Materials, Inc. Solution for the selective removal of metal from aluminum substrates
US7291565B2 (en) * 2005-02-15 2007-11-06 Tokyo Electron Limited Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid
WO2006104043A1 (ja) * 2005-03-25 2006-10-05 Mitsubishi Rayon Co., Ltd. 表面処理方法および表面処理された物品
KR100706822B1 (ko) * 2005-10-17 2007-04-12 삼성전자주식회사 절연 물질 제거용 조성물, 이를 이용한 절연막의 제거 방법및 기판의 재생 방법
CN101029397B (zh) * 2006-03-03 2011-04-13 Mec株式会社 表面处理剂和使用了该表面处理剂的皮膜形成方法
US20080139436A1 (en) * 2006-09-18 2008-06-12 Chris Reid Two step cleaning process to remove resist, etch residue, and copper oxide from substrates having copper and low-K dielectric material
JP4642001B2 (ja) 2006-10-24 2011-03-02 関東化学株式会社 フォトレジスト残渣及びポリマー残渣除去液組成物
TWI562234B (en) * 2006-12-21 2016-12-11 Entegris Inc Compositions and methods for the selective removal of silicon nitride
WO2008090418A1 (en) * 2007-01-22 2008-07-31 Freescale Semiconductor, Inc. Liquid cleaning composition and method for cleaning semiconductor devices
US20090211596A1 (en) * 2007-07-11 2009-08-27 Lam Research Corporation Method of post etch polymer residue removal
US8236703B2 (en) * 2007-09-12 2012-08-07 Texas Instruments Incorporated Methods for removing contaminants from aluminum-comprising bond pads and integrated circuits therefrom
JP5009207B2 (ja) * 2007-09-21 2012-08-22 大日本スクリーン製造株式会社 基板処理装置
US8211810B2 (en) * 2007-09-21 2012-07-03 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus and substrate processing method for performing etching process with phosphoric acid solution
US7872978B1 (en) * 2008-04-18 2011-01-18 Link—A—Media Devices Corporation Obtaining parameters for minimizing an error event probability
US8398779B2 (en) * 2009-03-02 2013-03-19 Applied Materials, Inc. Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates
SG10201402096TA (en) 2009-05-07 2014-10-30 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
WO2010127941A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
MY158776A (en) 2009-05-07 2016-11-15 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
JP2013504782A (ja) * 2009-09-09 2013-02-07 ドンウ ファイン−ケム カンパニー．，リミティド． 銅系配線の形成のためのレジスト除去用組成物
JP5646882B2 (ja) * 2009-09-30 2014-12-24 富士フイルム株式会社 洗浄組成物、洗浄方法、及び半導体装置の製造方法
SG183510A1 (en) * 2010-03-05 2012-09-27 Lam Res Corp Cleaning solution for sidewall polymer of damascene processes
WO2013118013A1 (en) * 2012-02-06 2013-08-15 Basf Se A post chemical-mechanical-polishing (post-cmp) cleaning composition comprising a specific sulfur-containing compound and a sugar alcohol or a polycarboxylic acid
US8951950B2 (en) * 2012-03-12 2015-02-10 Ekc Technology Aluminum post-etch residue removal with simultaneous surface passivation
KR20150016574A (ko) * 2012-05-18 2015-02-12 인티그리스, 인코포레이티드 티타늄 나이트라이드를 포함한 표면에서 포토레지스트를 제거하는 조성물 및 방법
US9447365B2 (en) * 2012-07-27 2016-09-20 Applied Materials, Inc. Enhanced cleaning process of chamber used plasma spray coating without damaging coating
US9536730B2 (en) 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
US9472420B2 (en) 2013-12-20 2016-10-18 Air Products And Chemicals, Inc. Composition for titanium nitride hard mask and etch residue removal
US9222018B1 (en) 2014-07-24 2015-12-29 Air Products And Chemicals, Inc. Titanium nitride hard mask and etch residue removal
US10332784B2 (en) 2015-03-31 2019-06-25 Versum Materials Us, Llc Selectively removing titanium nitride hard mask and etch residue removal
US10109575B1 (en) * 2017-03-30 2018-10-23 International Business Machines Corporation Non-planar metal-insulator-metal capacitor formation
WO2019026677A1 (ja) * 2017-07-31 2019-02-07 三菱瓦斯化学株式会社 コバルト、アルミナ、層間絶縁膜、窒化シリコンのダメージを抑制した組成液及びこれを用いた洗浄方法
US10889757B2 (en) * 2017-10-19 2021-01-12 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
IL274877B2 (en) * 2017-12-08 2024-03-01 Basf Se A cleaning agent for removing residues after burning or after ash from a semiconductor substrate and a corresponding manufacturing process
CN108166002B (zh) * 2017-12-27 2020-01-07 吉林省电力科学研究院有限公司 一种适用于化学清洗的低温除油漂洗洗液及其使用工艺
KR102579803B1 (ko) * 2018-07-06 2023-09-19 엔테그리스, 아이엔씨. 물질의 선택적 에칭을 위한 개선
US20230340370A1 (en) * 2020-08-25 2023-10-26 Basf Se Composition, Its Use And A Process For Removing Post-Etch Residues

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5181985A (en) 1988-06-01 1993-01-26 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Process for the wet-chemical surface treatment of semiconductor wafers
JP3160344B2 (ja) * 1991-01-25 2001-04-25 アシュランド インコーポレーテッド 有機ストリッピング組成物
US5294265A (en) * 1992-04-02 1994-03-15 Ppg Industries, Inc. Non-chrome passivation for metal substrates
JP2857042B2 (ja) 1993-10-19 1999-02-10 新日本製鐵株式会社 シリコン半導体およびシリコン酸化物の洗浄液
US5571447A (en) * 1995-03-20 1996-11-05 Ashland Inc. Stripping and cleaning composition
US5653823A (en) * 1995-10-20 1997-08-05 Ppg Industries, Inc. Non-chrome post-rinse composition for phosphated metal substrates
US5603849A (en) 1995-11-15 1997-02-18 Micron Technology, Inc. Methods and compositions for cleaning silicon wafers with a dynamic two phase liquid system with hydrofluoric acid
US5645737A (en) 1996-02-21 1997-07-08 Micron Technology, Inc. Wet clean for a surface having an exposed silicon/silica interface
US6896826B2 (en) * 1997-01-09 2005-05-24 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
US6033996A (en) * 1997-11-13 2000-03-07 International Business Machines Corporation Process for removing etching residues, etching mask and silicon nitride and/or silicon dioxide
US5858282A (en) * 1997-11-21 1999-01-12 Ppg Industries, Inc. Aqueous amine fluoride neutralizing composition for metal pretreatments containing organic resin and method
US6312812B1 (en) * 1998-12-01 2001-11-06 Ppg Industries Ohio, Inc. Coated metal substrates and methods for preparing and inhibiting corrosion of the same
US6440580B1 (en) * 1998-12-01 2002-08-27 Ppg Industries Ohio, Inc. Weldable, coated metal substrates and methods for preparing and inhibiting corrosion of the same
US6828289B2 (en) * 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US6248704B1 (en) * 1999-05-03 2001-06-19 Ekc Technology, Inc. Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6410926B1 (en) * 1999-10-01 2002-06-25 Ppg Industries Ohio, Inc. Coating with optical taggent
CN1330395A (zh) * 2000-06-27 2002-01-09 茂德科技股份有限公司 去除光致抗蚀剂后残留物质的清除方法
US6750274B2 (en) * 2001-02-08 2004-06-15 Ppg Industries Ohio. Inc. Weldable coating of phosphated epoxy polymer, curing agent and electroconductive pigment
MY143399A (en) * 2001-07-09 2011-05-13 Avantor Performance Mat Inc Microelectronic cleaning compositons containing ammonia-free fluoride salts for selective photoresist stripping and plasma ash residue cleaning
US6645633B2 (en) * 2001-09-25 2003-11-11 Henkel Corporation Autodeposition compositions
US7166419B2 (en) 2002-09-26 2007-01-23 Air Products And Chemicals, Inc. Compositions substrate for removing etching residue and use thereof
US6761933B2 (en) * 2002-10-24 2004-07-13 Ppg Industries Ohio, Inc. Process for coating untreated metal substrates

Also Published As

Publication number Publication date
CN1802731A (zh) 2006-07-12
WO2004100245A1 (en) 2004-11-18
JP2006526895A (ja) 2006-11-24
CN100442449C (zh) 2008-12-10
KR20060014388A (ko) 2006-02-15
US20050245409A1 (en) 2005-11-03
US7479474B2 (en) 2009-01-20
EP1620882A1 (en) 2006-02-01

Similar Documents

Publication Publication Date Title
TW200428512A (en) Reducing oxide loss when using fluoride chemistries to remove post-etch residues in semiconductor processing
CN102732393B (zh) 清洁制剂和使用该清洁制剂的方法
TWI461525B (zh) 用於ＣｏＷＰ及多孔介電材料的濕清洗組合物
CN101794088B (zh) 用于从基片上除去光致抗蚀剂和/或蚀刻残留物的组合物及其应用
US9327966B2 (en) Semi-aqueous polymer removal compositions with enhanced compatibility to copper, tungsten, and porous low-K dielectrics
JP2005528660A (ja) 半導体プロセス残留物除去組成物および方法
WO2004094581A1 (en) Aqueous fluoride compositions for cleaning semiconductor devices
WO2006110645A2 (en) Fluoride liquid cleaners with polar and non-polar solvent mixtures for cleaning low-k-containing microelectronic devices
CN110234719A (zh) 用于从表面去除氧化铈粒子的组合物和方法
KR20220024521A (ko) 반도체 기판용 세정 조성물
TWI500760B (zh) 以酸，有機溶劑為主之多用途微電子清潔組合物
CN110777021A (zh) 蚀刻后残留物清洁组合物及其使用方法
CN101223265A (zh) 剥离剂组合物
JP5730790B6 (ja) 酸性、有機溶媒ベースの多目的マイクロエレクトロニクス洗浄組成物