JP2006525429A - 湿式処理層の欠陥減少方法及びその装置 - Google Patents

湿式処理層の欠陥減少方法及びその装置 Download PDF

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Publication number
JP2006525429A
JP2006525429A JP2006506167A JP2006506167A JP2006525429A JP 2006525429 A JP2006525429 A JP 2006525429A JP 2006506167 A JP2006506167 A JP 2006506167A JP 2006506167 A JP2006506167 A JP 2006506167A JP 2006525429 A JP2006525429 A JP 2006525429A
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Japan
Prior art keywords
processing
solution
degassed
layer
degassing
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English (en)
Japanese (ja)
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JP2006525429A5 (enExample
Inventor
シプリアン イー． ウゾー
バレン エム． バソル
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エーエスエム ナトゥール インク．
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Publication of JP2006525429A publication Critical patent/JP2006525429A/ja
Publication of JP2006525429A5 publication Critical patent/JP2006525429A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1617—Purification and regeneration of coating baths
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/04—Removal of gases or vapours ; Gas or pressure control
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/16—Regeneration of process solutions
    • C25D21/18—Regeneration of process solutions of electrolytes
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemically Coating (AREA)
  • Electroplating Methods And Accessories (AREA)
  • ing And Chemical Polishing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Laminated Bodies (AREA)
JP2006506167A 2003-04-29 2004-04-23 湿式処理層の欠陥減少方法及びその装置 Withdrawn JP2006525429A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/425,782 US7189146B2 (en) 2003-03-27 2003-04-29 Method for reduction of defects in wet processed layers
PCT/GB2004/001739 WO2004097929A2 (en) 2003-04-29 2004-04-23 Method and apparatus for reduction of defects in wet processed layers

Publications (2)

Publication Number Publication Date
JP2006525429A true JP2006525429A (ja) 2006-11-09
JP2006525429A5 JP2006525429A5 (enExample) 2007-08-16

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JP2006506167A Withdrawn JP2006525429A (ja) 2003-04-29 2004-04-23 湿式処理層の欠陥減少方法及びその装置

Country Status (5)

Country Link
US (3) US7189146B2 (enExample)
JP (1) JP2006525429A (enExample)
KR (1) KR20060007045A (enExample)
TW (1) TW200503103A (enExample)
WO (1) WO2004097929A2 (enExample)

Cited By (6)

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Publication number Priority date Publication date Assignee Title
JP2009218573A (ja) * 2008-01-11 2009-09-24 Interuniv Micro Electronica Centrum Vzw 半導体処理中の電解腐食を防止するための方法および装置
KR20120080539A (ko) * 2011-01-07 2012-07-17 노벨러스 시스템즈, 인코포레이티드 개선된 공정 안정성 및 성능을 위한 전착 시스템의 구성 및 작동 방법
JP2014139341A (ja) * 2012-12-11 2014-07-31 Novellus Systems Incorporated 電気充填真空めっきセル
WO2016157251A1 (ja) * 2015-03-31 2016-10-06 株式会社Ｊｃｕ 処理液の脱気判定方法
US10128102B2 (en) 2013-02-20 2018-11-13 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
US10840101B2 (en) 2009-06-17 2020-11-17 Novellus Systems, Inc. Wetting pretreatment for enhanced damascene metal filling

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JP2003332274A (ja) * 2002-05-17 2003-11-21 Tokyo Seimitsu Co Ltd 化学的機械研磨方法及び化学的機械研磨装置
US8257781B1 (en) * 2002-06-28 2012-09-04 Novellus Systems, Inc. Electroless plating-liquid system
US7189146B2 (en) * 2003-03-27 2007-03-13 Asm Nutool, Inc. Method for reduction of defects in wet processed layers
US8844461B2 (en) * 2007-04-16 2014-09-30 Lam Research Corporation Fluid handling system for wafer electroless plating and associated methods
US8485120B2 (en) 2007-04-16 2013-07-16 Lam Research Corporation Method and apparatus for wafer electroless plating
US8069813B2 (en) * 2007-04-16 2011-12-06 Lam Research Corporation Wafer electroless plating system and associated methods
US7655094B2 (en) * 2004-07-07 2010-02-02 Nano Om, Llc Systems and methods for charging a cleaning solution used for cleaning integrated circuit substrates
US7731800B2 (en) * 2004-07-07 2010-06-08 Nano Om, Llc Systems and methods for single integrated substrate cleaning and rinsing
DE102005004361B4 (de) * 2005-01-31 2006-12-07 Advanced Micro Devices, Inc., Sunnyvale Vorrichtung und Verfahren zum Entfernen von Blasen aus einer Prozessflüssigkeit
US20090071837A1 (en) * 2005-11-18 2009-03-19 Mikael Fredenberg Master electrode and method of forming it
JP2007287939A (ja) * 2006-04-17 2007-11-01 Ebara Corp 研磨方法、及び研磨装置
US7704306B2 (en) * 2006-10-16 2010-04-27 Enthone Inc. Manufacture of electroless cobalt deposition compositions for microelectronics applications
US8784636B2 (en) * 2007-12-04 2014-07-22 Ebara Corporation Plating apparatus and plating method
JP2009228078A (ja) * 2008-03-24 2009-10-08 Fujitsu Ltd 電解メッキ液、電解メッキ方法、および半導体装置の製造方法
US20090266398A1 (en) * 2008-04-28 2009-10-29 Burak Metin Method and Apparatus to Form Back Contacts to Flexible CIGS Solar Cells
US8207012B2 (en) * 2008-04-28 2012-06-26 Solopower, Inc. Method and apparatus for achieving low resistance contact to a metal based thin film solar cell
US20090266399A1 (en) * 2008-04-28 2009-10-29 Basol Bulent M Metallic foil substrate and packaging technique for thin film solar cells and modules
US20120055805A1 (en) * 2008-07-02 2012-03-08 Kirchoff James A Cavitation assisted sonochemical hydrogen production system
US9455139B2 (en) 2009-06-17 2016-09-27 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
US9677188B2 (en) * 2009-06-17 2017-06-13 Novellus Systems, Inc. Electrofill vacuum plating cell
US9138784B1 (en) 2009-12-18 2015-09-22 Novellus Systems, Inc. Deionized water conditioning system and methods
US8168540B1 (en) 2009-12-29 2012-05-01 Novellus Systems, Inc. Methods and apparatus for depositing copper on tungsten
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US8877075B2 (en) 2012-02-01 2014-11-04 Infineon Technologies Ag Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning
US9816196B2 (en) 2012-04-27 2017-11-14 Novellus Systems, Inc. Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte
TWI517935B (zh) * 2013-04-16 2016-01-21 國立台灣科技大學 氣體添加硏磨液的供應系統及其方法
US9435049B2 (en) 2013-11-20 2016-09-06 Lam Research Corporation Alkaline pretreatment for electroplating
US9431262B2 (en) 2014-03-14 2016-08-30 Fujikoshi Machinery Corp. Method for polishing work and work polishing apparatus
CN105437083B (zh) * 2014-09-29 2018-11-06 盛美半导体设备（上海）有限公司 喷头装置
US9481942B2 (en) 2015-02-03 2016-11-01 Lam Research Corporation Geometry and process optimization for ultra-high RPM plating
US9617648B2 (en) 2015-03-04 2017-04-11 Lam Research Corporation Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias
US10832917B2 (en) * 2017-06-09 2020-11-10 International Business Machines Corporation Low oxygen cleaning for CMP equipment
TWI738115B (zh) * 2019-11-15 2021-09-01 英屬開曼群島商泰鼎國際事業股份有限公司 陽極污泥清除裝置、清除方法、電子設備及清除系統

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009218573A (ja) * 2008-01-11 2009-09-24 Interuniv Micro Electronica Centrum Vzw 半導体処理中の電解腐食を防止するための方法および装置
US10840101B2 (en) 2009-06-17 2020-11-17 Novellus Systems, Inc. Wetting pretreatment for enhanced damascene metal filling
KR20120080539A (ko) * 2011-01-07 2012-07-17 노벨러스 시스템즈, 인코포레이티드 개선된 공정 안정성 및 성능을 위한 전착 시스템의 구성 및 작동 방법
JP2014139341A (ja) * 2012-12-11 2014-07-31 Novellus Systems Incorporated 電気充填真空めっきセル
US10128102B2 (en) 2013-02-20 2018-11-13 Novellus Systems, Inc. Methods and apparatus for wetting pretreatment for through resist metal plating
WO2016157251A1 (ja) * 2015-03-31 2016-10-06 株式会社Ｊｃｕ 処理液の脱気判定方法
JPWO2016157251A1 (ja) * 2015-03-31 2018-01-25 株式会社Ｊｃｕ 処理液の脱気判定方法

Also Published As

Publication number Publication date
US7503830B2 (en) 2009-03-17
US7189146B2 (en) 2007-03-13
US20040222100A1 (en) 2004-11-11
US20070135022A1 (en) 2007-06-14
WO2004097929A3 (en) 2004-12-29
KR20060007045A (ko) 2006-01-23
WO2004097929A2 (en) 2004-11-11
US20040198190A1 (en) 2004-10-07
TW200503103A (en) 2005-01-16

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