KR20060007045A - 습식 처리된 층 내의 결함 감소 방법 및 장치 - Google Patents
습식 처리된 층 내의 결함 감소 방법 및 장치 Download PDFInfo
- Publication number
- KR20060007045A KR20060007045A KR1020057020595A KR20057020595A KR20060007045A KR 20060007045 A KR20060007045 A KR 20060007045A KR 1020057020595 A KR1020057020595 A KR 1020057020595A KR 20057020595 A KR20057020595 A KR 20057020595A KR 20060007045 A KR20060007045 A KR 20060007045A
- Authority
- KR
- South Korea
- Prior art keywords
- solution
- process solution
- degassed
- layer
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims abstract description 230
- 230000007547 defect Effects 0.000 title claims description 14
- 230000008569 process Effects 0.000 claims abstract description 175
- 238000000151 deposition Methods 0.000 claims abstract description 56
- 230000008021 deposition Effects 0.000 claims abstract description 39
- 238000007872 degassing Methods 0.000 claims abstract description 36
- 238000012545 processing Methods 0.000 claims abstract description 28
- 238000004070 electrodeposition Methods 0.000 claims abstract description 24
- 238000005498 polishing Methods 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 238000011065 in-situ storage Methods 0.000 claims abstract description 5
- 239000007789 gas Substances 0.000 claims description 113
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 51
- 239000010949 copper Substances 0.000 claims description 51
- 229910052802 copper Inorganic materials 0.000 claims description 50
- 239000000463 material Substances 0.000 claims description 27
- 239000000126 substance Substances 0.000 claims description 25
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 23
- 239000001301 oxygen Substances 0.000 claims description 23
- 229910052760 oxygen Inorganic materials 0.000 claims description 23
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000010297 mechanical methods and process Methods 0.000 claims description 12
- 230000005226 mechanical processes and functions Effects 0.000 claims description 12
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 238000005137 deposition process Methods 0.000 claims description 9
- 238000003860 storage Methods 0.000 claims description 9
- 238000001311 chemical methods and process Methods 0.000 claims description 8
- 238000005229 chemical vapour deposition Methods 0.000 claims description 7
- 238000004064 recycling Methods 0.000 claims description 6
- 239000001569 carbon dioxide Substances 0.000 claims description 5
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 5
- 239000006259 organic additive Substances 0.000 claims description 5
- 238000005406 washing Methods 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 3
- 230000003993 interaction Effects 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 238000007598 dipping method Methods 0.000 claims 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 1
- 238000002791 soaking Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 63
- 239000003792 electrolyte Substances 0.000 description 61
- 238000007747 plating Methods 0.000 description 25
- 239000000758 substrate Substances 0.000 description 21
- 239000000654 additive Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 239000000523 sample Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 238000004090 dissolution Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 238000007517 polishing process Methods 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000105 evaporative light scattering detection Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 239000013256 coordination polymer Substances 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000035699 permeability Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000000866 electrolytic etching Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- JGPMMRGNQUBGND-UHFFFAOYSA-N idebenone Chemical compound COC1=C(OC)C(=O)C(CCCCCCCCCCO)=C(C)C1=O JGPMMRGNQUBGND-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000013386 optimize process Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1617—Purification and regeneration of coating baths
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/04—Removal of gases or vapours ; Gas or pressure control
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D21/00—Processes for servicing or operating cells for electrolytic coating
- C25D21/16—Regeneration of process solutions
- C25D21/18—Regeneration of process solutions of electrolytes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Chemically Coating (AREA)
- Electroplating Methods And Accessories (AREA)
- ing And Chemical Polishing (AREA)
- Electrodes Of Semiconductors (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Laminated Bodies (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/425,782 US7189146B2 (en) | 2003-03-27 | 2003-04-29 | Method for reduction of defects in wet processed layers |
| US10/425,782 | 2003-04-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20060007045A true KR20060007045A (ko) | 2006-01-23 |
Family
ID=33415924
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020057020595A Withdrawn KR20060007045A (ko) | 2003-04-29 | 2004-04-23 | 습식 처리된 층 내의 결함 감소 방법 및 장치 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US7189146B2 (enExample) |
| JP (1) | JP2006525429A (enExample) |
| KR (1) | KR20060007045A (enExample) |
| TW (1) | TW200503103A (enExample) |
| WO (1) | WO2004097929A2 (enExample) |
Families Citing this family (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003332274A (ja) * | 2002-05-17 | 2003-11-21 | Tokyo Seimitsu Co Ltd | 化学的機械研磨方法及び化学的機械研磨装置 |
| US8257781B1 (en) * | 2002-06-28 | 2012-09-04 | Novellus Systems, Inc. | Electroless plating-liquid system |
| US7189146B2 (en) * | 2003-03-27 | 2007-03-13 | Asm Nutool, Inc. | Method for reduction of defects in wet processed layers |
| US8844461B2 (en) * | 2007-04-16 | 2014-09-30 | Lam Research Corporation | Fluid handling system for wafer electroless plating and associated methods |
| US8485120B2 (en) | 2007-04-16 | 2013-07-16 | Lam Research Corporation | Method and apparatus for wafer electroless plating |
| US8069813B2 (en) * | 2007-04-16 | 2011-12-06 | Lam Research Corporation | Wafer electroless plating system and associated methods |
| US7655094B2 (en) * | 2004-07-07 | 2010-02-02 | Nano Om, Llc | Systems and methods for charging a cleaning solution used for cleaning integrated circuit substrates |
| US7731800B2 (en) * | 2004-07-07 | 2010-06-08 | Nano Om, Llc | Systems and methods for single integrated substrate cleaning and rinsing |
| DE102005004361B4 (de) * | 2005-01-31 | 2006-12-07 | Advanced Micro Devices, Inc., Sunnyvale | Vorrichtung und Verfahren zum Entfernen von Blasen aus einer Prozessflüssigkeit |
| US20090071837A1 (en) * | 2005-11-18 | 2009-03-19 | Mikael Fredenberg | Master electrode and method of forming it |
| JP2007287939A (ja) * | 2006-04-17 | 2007-11-01 | Ebara Corp | 研磨方法、及び研磨装置 |
| US7704306B2 (en) * | 2006-10-16 | 2010-04-27 | Enthone Inc. | Manufacture of electroless cobalt deposition compositions for microelectronics applications |
| US8784636B2 (en) * | 2007-12-04 | 2014-07-22 | Ebara Corporation | Plating apparatus and plating method |
| EP2079099B1 (en) * | 2008-01-11 | 2015-09-16 | Imec | Method and apparatus for preventing galvanic corrosion in semiconductor processing |
| JP2009228078A (ja) * | 2008-03-24 | 2009-10-08 | Fujitsu Ltd | 電解メッキ液、電解メッキ方法、および半導体装置の製造方法 |
| US20090266398A1 (en) * | 2008-04-28 | 2009-10-29 | Burak Metin | Method and Apparatus to Form Back Contacts to Flexible CIGS Solar Cells |
| US8207012B2 (en) * | 2008-04-28 | 2012-06-26 | Solopower, Inc. | Method and apparatus for achieving low resistance contact to a metal based thin film solar cell |
| US20090266399A1 (en) * | 2008-04-28 | 2009-10-29 | Basol Bulent M | Metallic foil substrate and packaging technique for thin film solar cells and modules |
| US20120055805A1 (en) * | 2008-07-02 | 2012-03-08 | Kirchoff James A | Cavitation assisted sonochemical hydrogen production system |
| US9455139B2 (en) | 2009-06-17 | 2016-09-27 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
| US8962085B2 (en) * | 2009-06-17 | 2015-02-24 | Novellus Systems, Inc. | Wetting pretreatment for enhanced damascene metal filling |
| US9677188B2 (en) * | 2009-06-17 | 2017-06-13 | Novellus Systems, Inc. | Electrofill vacuum plating cell |
| US9138784B1 (en) | 2009-12-18 | 2015-09-22 | Novellus Systems, Inc. | Deionized water conditioning system and methods |
| US8168540B1 (en) | 2009-12-29 | 2012-05-01 | Novellus Systems, Inc. | Methods and apparatus for depositing copper on tungsten |
| US9816193B2 (en) * | 2011-01-07 | 2017-11-14 | Novellus Systems, Inc. | Configuration and method of operation of an electrodeposition system for improved process stability and performance |
| US8852668B2 (en) | 2011-03-02 | 2014-10-07 | Abbott Cardiovascular Systems Inc. | In-line bubble removal mechanism |
| US20120289134A1 (en) * | 2011-05-13 | 2012-11-15 | Li-Chung Liu | Cmp slurry mix and delivery system |
| US8877075B2 (en) | 2012-02-01 | 2014-11-04 | Infineon Technologies Ag | Apparatuses and methods for gas mixed liquid polishing, etching, and cleaning |
| US9816196B2 (en) | 2012-04-27 | 2017-11-14 | Novellus Systems, Inc. | Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte |
| CN103866365A (zh) * | 2012-12-11 | 2014-06-18 | 诺发系统公司 | 电镀填充真空电镀槽 |
| US9613833B2 (en) | 2013-02-20 | 2017-04-04 | Novellus Systems, Inc. | Methods and apparatus for wetting pretreatment for through resist metal plating |
| TWI517935B (zh) * | 2013-04-16 | 2016-01-21 | 國立台灣科技大學 | 氣體添加硏磨液的供應系統及其方法 |
| US9435049B2 (en) | 2013-11-20 | 2016-09-06 | Lam Research Corporation | Alkaline pretreatment for electroplating |
| US9431262B2 (en) | 2014-03-14 | 2016-08-30 | Fujikoshi Machinery Corp. | Method for polishing work and work polishing apparatus |
| CN105437083B (zh) * | 2014-09-29 | 2018-11-06 | 盛美半导体设备（上海）有限公司 | 喷头装置 |
| US9481942B2 (en) | 2015-02-03 | 2016-11-01 | Lam Research Corporation | Geometry and process optimization for ultra-high RPM plating |
| US9617648B2 (en) | 2015-03-04 | 2017-04-11 | Lam Research Corporation | Pretreatment of nickel and cobalt liners for electrodeposition of copper into through silicon vias |
| CN107427743A (zh) * | 2015-03-31 | 2017-12-01 | 株式会社杰希优 | 处理液的脱气判定方法 |
| US10832917B2 (en) * | 2017-06-09 | 2020-11-10 | International Business Machines Corporation | Low oxygen cleaning for CMP equipment |
| TWI738115B (zh) * | 2019-11-15 | 2021-09-01 | 英屬開曼群島商泰鼎國際事業股份有限公司 | 陽極污泥清除裝置、清除方法、電子設備及清除系統 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3276983A (en) * | 1962-07-25 | 1966-10-04 | Gen Motors Corp | Method and apparatus for movement of workpieces in a plating machine |
| US3616599A (en) * | 1970-02-19 | 1971-11-02 | Thermotics | Method and apparatus for the degasification of drilling muds |
| DE2415573B2 (de) * | 1974-03-30 | 1977-05-12 | Langbein-Pfanhauser Werke Ag, 4040 Neuss | Verfahren zur elektrochemischen und/oder chemischen metallabscheidung |
| SE7603626L (sv) | 1975-03-27 | 1977-01-04 | Otto Alfred Becker | Anordning for att galvanisera metallytor, serskilt vid snittkantytor hos genom stapling tillskurna platar |
| US4130706A (en) * | 1977-08-08 | 1978-12-19 | E. I. Du Pont De Nemours And Company | Hydrophilic, oxygen permeable contact lens |
| FR2416958A1 (fr) * | 1978-02-09 | 1979-09-07 | Bunker Ramo | Procede d'obtention d'un depot de metal sur de petites pieces usinees et dispositif pour la mise en oeuvre de ce procede |
| JPS6112877A (ja) | 1984-06-27 | 1986-01-21 | Toshiba Corp | 無電解銅めつきのめつき方法 |
| US5383483A (en) * | 1992-10-14 | 1995-01-24 | Shibano; Yoshihide | Ultrasonic cleaning and deburring apparatus |
| US5762684A (en) * | 1995-11-30 | 1998-06-09 | Dainippon Screen Mfg. Co., Ltd. | Treating liquid supplying method and apparatus |
| JPH09162118A (ja) * | 1995-12-11 | 1997-06-20 | Dainippon Screen Mfg Co Ltd | 基板用処理液の脱気装置 |
| US5695545A (en) * | 1996-05-10 | 1997-12-09 | Hoechst Celanese Corporation | Degassing liquids: apparatus and method |
| US6171367B1 (en) * | 1997-06-05 | 2001-01-09 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for delivering and recycling a bubble-free liquid chemical |
| US6544585B1 (en) | 1997-09-02 | 2003-04-08 | Ebara Corporation | Method and apparatus for plating a substrate |
| US6113769A (en) * | 1997-11-21 | 2000-09-05 | International Business Machines Corporation | Apparatus to monitor and add plating solution of plating baths and controlling quality of deposited metal |
| US6110345A (en) * | 1998-11-24 | 2000-08-29 | Advanced Micro Devices, Inc. | Method and system for plating workpieces |
| US6254760B1 (en) * | 1999-03-05 | 2001-07-03 | Applied Materials, Inc. | Electro-chemical deposition system and method |
| US6267853B1 (en) * | 1999-07-09 | 2001-07-31 | Applied Materials, Inc. | Electro-chemical deposition system |
| JP2000176261A (ja) * | 1998-12-11 | 2000-06-27 | Fuji Photo Film Co Ltd | 水系塗工液の脱気方法 |
| US6585876B2 (en) | 1999-04-08 | 2003-07-01 | Applied Materials Inc. | Flow diffuser to be used in electro-chemical plating system and method |
| US6146517A (en) * | 1999-05-19 | 2000-11-14 | Infineon Technologies North America Corp. | Integrated circuits with copper metallization for interconnections |
| WO2000075402A1 (en) | 1999-06-04 | 2000-12-14 | Mykrolis Corporation | Hydrophobic and hydrophilic membranes to vent trapped gases in a plating cell |
| US6241585B1 (en) * | 1999-06-25 | 2001-06-05 | Applied Materials, Inc. | Apparatus and method for chemical mechanical polishing |
| US6328871B1 (en) | 1999-08-16 | 2001-12-11 | Applied Materials, Inc. | Barrier layer for electroplating processes |
| US6331237B1 (en) * | 1999-09-01 | 2001-12-18 | International Business Machines Corporation | Method of improving contact reliability for electroplating |
| JP2001196728A (ja) | 2000-01-11 | 2001-07-19 | Toshiba Chem Corp | プリント配線板の製造方法およびプリント配線板の層間接続穴用メッキ装置 |
| CN1499992A (zh) * | 2001-02-07 | 2004-05-26 | 含水镀液的脱气方法 | |
| US20040026255A1 (en) * | 2002-08-06 | 2004-02-12 | Applied Materials, Inc | Insoluble anode loop in copper electrodeposition cell for interconnect formation |
| US7189146B2 (en) * | 2003-03-27 | 2007-03-13 | Asm Nutool, Inc. | Method for reduction of defects in wet processed layers |
-
2003
- 2003-04-29 US US10/425,782 patent/US7189146B2/en not_active Expired - Lifetime
-
2004
- 2004-02-05 US US10/772,687 patent/US20040222100A1/en not_active Abandoned
- 2004-04-23 WO PCT/GB2004/001739 patent/WO2004097929A2/en not_active Ceased
- 2004-04-23 KR KR1020057020595A patent/KR20060007045A/ko not_active Withdrawn
- 2004-04-23 JP JP2006506167A patent/JP2006525429A/ja not_active Withdrawn
- 2004-04-28 TW TW093111845A patent/TW200503103A/zh unknown
-
2007
- 2007-02-09 US US11/704,631 patent/US7503830B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US7503830B2 (en) | 2009-03-17 |
| US7189146B2 (en) | 2007-03-13 |
| US20040222100A1 (en) | 2004-11-11 |
| US20070135022A1 (en) | 2007-06-14 |
| WO2004097929A3 (en) | 2004-12-29 |
| JP2006525429A (ja) | 2006-11-09 |
| WO2004097929A2 (en) | 2004-11-11 |
| US20040198190A1 (en) | 2004-10-07 |
| TW200503103A (en) | 2005-01-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20060007045A (ko) | 습식 처리된 층 내의 결함 감소 방법 및 장치 | |
| US6709565B2 (en) | Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation | |
| CN102804343B (zh) | 用于增强型镶嵌金属填充的润湿预处理的设备 | |
| US6143155A (en) | Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly | |
| KR100845566B1 (ko) | 도금장치 및 도금액 조성의 관리방법 | |
| US6121152A (en) | Method and apparatus for planarization of metallized semiconductor wafers using a bipolar electrode assembly | |
| US6132586A (en) | Method and apparatus for non-contact metal plating of semiconductor wafers using a bipolar electrode assembly | |
| US7229535B2 (en) | Hydrogen bubble reduction on the cathode using double-cell designs | |
| US7449098B1 (en) | Method for planar electroplating | |
| CN111149198A (zh) | 通掩模互联制造中的电氧化金属去除 | |
| JP2004519557A (ja) | 銅めっき液、めっき方法及びめっき装置 | |
| KR20150058038A (ko) | 전기도금을 위한 알카리성 전처리 | |
| US7531079B1 (en) | Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation | |
| KR100859899B1 (ko) | 반도체 기판상의 구리 막을 연마하는 전기 화학적 방법 | |
| Chang et al. | Pattern effects on planarization efficiency of Cu electropolishing | |
| KR20040012814A (ko) | 무전해 도금방법 및 장치, 기판처리방법 및 장치 | |
| JP2004218080A (ja) | めっき方法 | |
| JP4163728B2 (ja) | 電気めっき方法 | |
| US20050109627A1 (en) | Methods and chemistry for providing initial conformal electrochemical deposition of copper in sub-micron features | |
| JP2003306793A (ja) | めっき装置及び方法 | |
| US20070181441A1 (en) | Method and apparatus for electropolishing | |
| KR101265416B1 (ko) | 개선된 다마신 금속 충전에 있어서 웨팅 전처리를 위한 장치 | |
| US20060081477A1 (en) | Method and apparatus for establishing additive differential on surfaces for preferential plating | |
| US20050029106A1 (en) | Reduction of defects in conductive layers during electroplating | |
| JP2003183892A (ja) | めっき装置 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PA0105 | International application |
Patent event date: 20051028 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PG1501 | Laying open of application | ||
| PC1203 | Withdrawal of no request for examination | ||
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |