JP2006517740A - ウェーハ加工装置及びその製造方法 - Google Patents

ウェーハ加工装置及びその製造方法 Download PDF

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Publication number
JP2006517740A
JP2006517740A JP2006502856A JP2006502856A JP2006517740A JP 2006517740 A JP2006517740 A JP 2006517740A JP 2006502856 A JP2006502856 A JP 2006502856A JP 2006502856 A JP2006502856 A JP 2006502856A JP 2006517740 A JP2006517740 A JP 2006517740A
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JP
Japan
Prior art keywords
coating
processing apparatus
wafer processing
graphite
shaft
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006502856A
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English (en)
Japanese (ja)
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JP2006517740A5 (enExample
Inventor
マリナー，ジョン・トーマス
ヘジル，ティモシー・ジェイ
ロングワース，ダグラス・アラン
レナーツ，ジェフリー
セイン，アジット
メイシー，アンドリュー・ジョン
ライスト，ジョン
デ−ヴァン，トーマス・イー
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General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of JP2006517740A publication Critical patent/JP2006517740A/ja
Publication of JP2006517740A5 publication Critical patent/JP2006517740A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Resistance Heating (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
JP2006502856A 2003-01-17 2004-01-16 ウェーハ加工装置及びその製造方法 Pending JP2006517740A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US44116503P 2003-01-17 2003-01-17
US44240903P 2003-01-24 2003-01-24
PCT/US2004/001128 WO2004068541A2 (en) 2003-01-17 2004-01-16 Wafer handling apparatus

Publications (2)

Publication Number Publication Date
JP2006517740A true JP2006517740A (ja) 2006-07-27
JP2006517740A5 JP2006517740A5 (enExample) 2007-03-08

Family

ID=32829769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006502856A Pending JP2006517740A (ja) 2003-01-17 2004-01-16 ウェーハ加工装置及びその製造方法

Country Status (5)

Country Link
US (1) US7364624B2 (enExample)
EP (1) EP1588404A2 (enExample)
JP (1) JP2006517740A (enExample)
KR (1) KR20050088159A (enExample)
WO (1) WO2004068541A2 (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160118259A (ko) * 2014-02-07 2016-10-11 엔테그리스, 아이엔씨. 정전 척 및 이의 제조 방법
JP2018113430A (ja) * 2016-10-28 2018-07-19 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 接点を有する、応力均衡のとれた静電基板キャリア
US10718053B2 (en) 2017-12-07 2020-07-21 Samsung Electronics Co., Ltd. Wafer loading apparatus and film forming apparatus
JPWO2021010063A1 (enExample) * 2019-07-16 2021-01-21
WO2021010062A1 (ja) * 2019-07-16 2021-01-21 日本碍子株式会社 シャフト付きセラミックヒータ

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US7312422B2 (en) * 2006-03-17 2007-12-25 Momentive Performance Materials Inc. Semiconductor batch heating assembly
KR101329630B1 (ko) 2006-04-13 2013-11-14 신에쓰 가가꾸 고교 가부시끼가이샤 가열소자
JP4654153B2 (ja) 2006-04-13 2011-03-16 信越化学工業株式会社 加熱素子
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US20080066683A1 (en) * 2006-09-19 2008-03-20 General Electric Company Assembly with Enhanced Thermal Uniformity and Method For Making Thereof
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JP2008085283A (ja) 2006-09-26 2008-04-10 Momentive Performance Materials Inc 熱均一性が強化された加熱装置及びその製造方法
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KR101053788B1 (ko) * 2008-03-26 2011-08-03 (주)램피스 반도체 웨이퍼 히팅장치 및 이의 제조방법
US8064185B2 (en) * 2008-09-05 2011-11-22 Applied Materials, Inc. Electrostatic chuck electrical balancing circuit repair
KR101122719B1 (ko) * 2009-05-27 2012-03-23 (주)티티에스 기판 가열 장치 및 이의 제조 방법 그리고, 이를 포함하는 기판 처리 장치
US20130189022A1 (en) * 2011-11-30 2013-07-25 Component Re-Engineering Company, Inc. Hermetically Joined Plate And Shaft Devices
US8932690B2 (en) * 2011-11-30 2015-01-13 Component Re-Engineering Company, Inc. Plate and shaft device
US10154542B2 (en) 2015-10-19 2018-12-11 Watlow Electric Manufacturing Company Composite device with cylindrical anisotropic thermal conductivity
US9640514B1 (en) 2016-03-29 2017-05-02 Globalfoundries Inc. Wafer bonding using boron and nitrogen based bonding stack
CN106685375B (zh) * 2016-12-15 2023-07-18 合肥晶威特电子有限责任公司 一种smd石英晶体谐振器基座以及加工方法
KR102102851B1 (ko) * 2018-01-25 2020-04-22 한국과학기술원 박막 코팅 방법 및 그에 따라 제조된 전자 소자
JP6702385B2 (ja) * 2018-09-27 2020-06-03 住友大阪セメント株式会社 静電チャック装置
JP6873178B2 (ja) * 2019-03-26 2021-05-19 日本碍子株式会社 半導体製造装置用部材、その製法及び成形型
US11665786B2 (en) * 2019-12-05 2023-05-30 Applied Materials, Inc. Solid state heater and method of manufacture
US20220076988A1 (en) * 2020-09-10 2022-03-10 Applied Materials, Inc. Back side design for flat silicon carbide susceptor
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Cited By (17)

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Publication number Priority date Publication date Assignee Title
KR20160118259A (ko) * 2014-02-07 2016-10-11 엔테그리스, 아이엔씨. 정전 척 및 이의 제조 방법
JP2017507484A (ja) * 2014-02-07 2017-03-16 インテグリス・インコーポレーテッド 静電チャックおよびその作製方法
US10497598B2 (en) 2014-02-07 2019-12-03 Entegris, Inc. Electrostatic chuck and method of making same
KR102369706B1 (ko) 2014-02-07 2022-03-04 엔테그리스, 아이엔씨. 정전 척 및 이의 제조 방법
JP2018113430A (ja) * 2016-10-28 2018-07-19 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 接点を有する、応力均衡のとれた静電基板キャリア
US10718053B2 (en) 2017-12-07 2020-07-21 Samsung Electronics Co., Ltd. Wafer loading apparatus and film forming apparatus
JPWO2021010062A1 (enExample) * 2019-07-16 2021-01-21
WO2021010063A1 (ja) * 2019-07-16 2021-01-21 日本碍子株式会社 シャフト付きセラミックヒータ
WO2021010062A1 (ja) * 2019-07-16 2021-01-21 日本碍子株式会社 シャフト付きセラミックヒータ
KR20210144780A (ko) * 2019-07-16 2021-11-30 엔지케이 인슐레이터 엘티디 샤프트를 갖는 세라믹 히터
CN114041323A (zh) * 2019-07-16 2022-02-11 日本碍子株式会社 带轴的陶瓷加热器
JPWO2021010063A1 (enExample) * 2019-07-16 2021-01-21
CN114175851A (zh) * 2019-07-16 2022-03-11 日本碍子株式会社 带轴的陶瓷加热器
JP7174159B2 (ja) 2019-07-16 2022-11-17 日本碍子株式会社 シャフト付きセラミックヒータ
JP7240499B2 (ja) 2019-07-16 2023-03-15 日本碍子株式会社 シャフト付きセラミックヒータ
KR102603485B1 (ko) 2019-07-16 2023-11-16 엔지케이 인슐레이터 엘티디 샤프트를 갖는 세라믹 히터
US12284729B2 (en) 2019-07-16 2025-04-22 Ngk Insulators, Ltd. Ceramic heater with shaft

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KR20050088159A (ko) 2005-09-01
WO2004068541A3 (en) 2004-12-02
US20040173161A1 (en) 2004-09-09
WO2004068541A2 (en) 2004-08-12
EP1588404A2 (en) 2005-10-26
US7364624B2 (en) 2008-04-29

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