JP2006517740A5 - - Google Patents

Download PDF

Info

Publication number
JP2006517740A5
JP2006517740A5 JP2006502856A JP2006502856A JP2006517740A5 JP 2006517740 A5 JP2006517740 A5 JP 2006517740A5 JP 2006502856 A JP2006502856 A JP 2006502856A JP 2006502856 A JP2006502856 A JP 2006502856A JP 2006517740 A5 JP2006517740 A5 JP 2006517740A5
Authority
JP
Japan
Prior art keywords
processing apparatus
wafer processing
graphite
conductors
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2006502856A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006517740A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2004/001128 external-priority patent/WO2004068541A2/en
Publication of JP2006517740A publication Critical patent/JP2006517740A/ja
Publication of JP2006517740A5 publication Critical patent/JP2006517740A5/ja
Pending legal-status Critical Current

Links

JP2006502856A 2003-01-17 2004-01-16 ウェーハ加工装置及びその製造方法 Pending JP2006517740A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US44116503P 2003-01-17 2003-01-17
US44240903P 2003-01-24 2003-01-24
PCT/US2004/001128 WO2004068541A2 (en) 2003-01-17 2004-01-16 Wafer handling apparatus

Publications (2)

Publication Number Publication Date
JP2006517740A JP2006517740A (ja) 2006-07-27
JP2006517740A5 true JP2006517740A5 (enExample) 2007-03-08

Family

ID=32829769

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006502856A Pending JP2006517740A (ja) 2003-01-17 2004-01-16 ウェーハ加工装置及びその製造方法

Country Status (5)

Country Link
US (1) US7364624B2 (enExample)
EP (1) EP1588404A2 (enExample)
JP (1) JP2006517740A (enExample)
KR (1) KR20050088159A (enExample)
WO (1) WO2004068541A2 (enExample)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO20023605D0 (no) * 2002-07-29 2002-07-29 Sumit Roy Fremgangsmåte og innretning til innbyrdes forbindelse av to rörformede organer
JP4278046B2 (ja) * 2003-11-10 2009-06-10 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 ヒータ機構付き静電チャック
US20060096946A1 (en) * 2004-11-10 2006-05-11 General Electric Company Encapsulated wafer processing device and process for making thereof
TWI297908B (en) * 2005-03-16 2008-06-11 Ngk Insulators Ltd Processing device
JP4435742B2 (ja) * 2005-08-09 2010-03-24 信越化学工業株式会社 加熱素子
US20070062676A1 (en) * 2005-09-20 2007-03-22 Grand Power Sources Inc. Heat sink module
DE102005056364B3 (de) * 2005-11-25 2007-08-16 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Bipolarer Trägerwafer und mobile, bipolare, elektrostatische Waferanordnung
US9892941B2 (en) * 2005-12-01 2018-02-13 Applied Materials, Inc. Multi-zone resistive heater
KR101299495B1 (ko) * 2005-12-08 2013-08-29 신에쓰 가가꾸 고교 가부시끼가이샤 세라믹스 히터, 히터 급전 부품 및 세라믹스 히터의제조방법
US20070181065A1 (en) * 2006-02-09 2007-08-09 General Electric Company Etch resistant heater and assembly thereof
US7312422B2 (en) * 2006-03-17 2007-12-25 Momentive Performance Materials Inc. Semiconductor batch heating assembly
KR101329630B1 (ko) 2006-04-13 2013-11-14 신에쓰 가가꾸 고교 가부시끼가이샤 가열소자
JP4654153B2 (ja) 2006-04-13 2011-03-16 信越化学工業株式会社 加熱素子
US7420143B2 (en) * 2006-06-11 2008-09-02 Momentive Performance Materials Inc. Durable graphite connector and method for manufacturing thereof
US20080066683A1 (en) * 2006-09-19 2008-03-20 General Electric Company Assembly with Enhanced Thermal Uniformity and Method For Making Thereof
US7901509B2 (en) * 2006-09-19 2011-03-08 Momentive Performance Materials Inc. Heating apparatus with enhanced thermal uniformity and method for making thereof
JP2008085283A (ja) 2006-09-26 2008-04-10 Momentive Performance Materials Inc 熱均一性が強化された加熱装置及びその製造方法
DE102007045216A1 (de) * 2007-09-21 2009-04-02 Khs Corpoplast Gmbh & Co. Kg Vorrichtung zur Plasmabehandlung von Werkstücken
KR101053788B1 (ko) * 2008-03-26 2011-08-03 (주)램피스 반도체 웨이퍼 히팅장치 및 이의 제조방법
US8064185B2 (en) * 2008-09-05 2011-11-22 Applied Materials, Inc. Electrostatic chuck electrical balancing circuit repair
KR101122719B1 (ko) * 2009-05-27 2012-03-23 (주)티티에스 기판 가열 장치 및 이의 제조 방법 그리고, 이를 포함하는 기판 처리 장치
US8789743B2 (en) * 2011-11-30 2014-07-29 Component Re-Engineering Company, Inc. Hermetically joined ceramic assemblies and low temperature method for hermetically joining ceramic materials
US8932690B2 (en) * 2011-11-30 2015-01-13 Component Re-Engineering Company, Inc. Plate and shaft device
CN107078086B (zh) * 2014-02-07 2021-01-26 恩特格里斯公司 静电夹具以及制造其之方法
US10154542B2 (en) 2015-10-19 2018-12-11 Watlow Electric Manufacturing Company Composite device with cylindrical anisotropic thermal conductivity
US9640514B1 (en) 2016-03-29 2017-05-02 Globalfoundries Inc. Wafer bonding using boron and nitrogen based bonding stack
US20180122679A1 (en) * 2016-10-28 2018-05-03 Applied Materials, Inc. Stress balanced electrostatic substrate carrier with contacts
CN106685375B (zh) * 2016-12-15 2023-07-18 合肥晶威特电子有限责任公司 一种smd石英晶体谐振器基座以及加工方法
KR102519544B1 (ko) 2017-12-07 2023-04-07 삼성전자주식회사 웨이퍼 로딩 장치 및 막 형성 장치
KR102102851B1 (ko) * 2018-01-25 2020-04-22 한국과학기술원 박막 코팅 방법 및 그에 따라 제조된 전자 소자
JP6702385B2 (ja) * 2018-09-27 2020-06-03 住友大阪セメント株式会社 静電チャック装置
JP6873178B2 (ja) * 2019-03-26 2021-05-19 日本碍子株式会社 半導体製造装置用部材、その製法及び成形型
WO2021010063A1 (ja) * 2019-07-16 2021-01-21 日本碍子株式会社 シャフト付きセラミックヒータ
CN114175851B (zh) * 2019-07-16 2024-06-25 日本碍子株式会社 带轴的陶瓷加热器
US11665786B2 (en) * 2019-12-05 2023-05-30 Applied Materials, Inc. Solid state heater and method of manufacture
US20220076988A1 (en) * 2020-09-10 2022-03-10 Applied Materials, Inc. Back side design for flat silicon carbide susceptor
US11515195B2 (en) * 2020-10-26 2022-11-29 Applied Materials, Inc. Semiconductor chamber components with high-performance coating
KR102725322B1 (ko) * 2024-03-05 2024-11-04 주식회사 미코세라믹스 세라믹 서셉터

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5723975A (en) * 1980-07-18 1982-02-08 Konishiroku Photo Ind Co Ltd Intermediate copying body
JPS63134145A (ja) * 1986-11-22 1988-06-06 Tokuda Seisakusho Ltd 静電チヤツク
US6413589B1 (en) * 1988-11-29 2002-07-02 Chou H. Li Ceramic coating method
JP2941908B2 (ja) * 1989-07-31 1999-08-30 キヤノン株式会社 薄膜トランジスタ及びその製造方法並びにそれを有する装置
DE69111493T2 (de) * 1990-03-12 1996-03-21 Ngk Insulators Ltd Wafer-Heizgeräte für Apparate, zur Halbleiterherstellung Heizanlage mit diesen Heizgeräten und Herstellung von Heizgeräten.
EP0493089B1 (en) * 1990-12-25 1998-09-16 Ngk Insulators, Ltd. Wafer heating apparatus and method for producing the same
US5210452A (en) * 1991-08-06 1993-05-11 Board Of Regents, The University Of Texas System Symmetric armature for high current, air-core pulsed alternators
US5343022A (en) * 1992-09-29 1994-08-30 Advanced Ceramics Corporation Pyrolytic boron nitride heating unit
US5478429A (en) * 1993-01-20 1995-12-26 Tokyo Electron Limited Plasma process apparatus
US5444217A (en) * 1993-01-21 1995-08-22 Moore Epitaxial Inc. Rapid thermal processing apparatus for processing semiconductor wafers
JP2749759B2 (ja) * 1993-06-23 1998-05-13 信越化学工業株式会社 静電チャック付セラミックスヒーター
JPH07172963A (ja) * 1993-12-22 1995-07-11 Shin Etsu Chem Co Ltd 熱分解窒化ホウ素被覆複層成形体及びその製造方法
US5822171A (en) * 1994-02-22 1998-10-13 Applied Materials, Inc. Electrostatic chuck with improved erosion resistance
EP0846190A1 (en) * 1995-06-13 1998-06-10 Massively Parallel Instruments, Inc. Improved parallel ion optics and apparatus for high current low energy ion beams
US6143081A (en) * 1996-07-12 2000-11-07 Tokyo Electron Limited Film forming apparatus and method, and film modifying apparatus and method
US5653808A (en) * 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors
US6066836A (en) * 1996-09-23 2000-05-23 Applied Materials, Inc. High temperature resistive heater for a process chamber
US5748436A (en) * 1996-10-02 1998-05-05 Advanced Ceramics Corporation Ceramic electrostatic chuck and method
US6072163A (en) * 1998-03-05 2000-06-06 Fsi International Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
US6081414A (en) * 1998-05-01 2000-06-27 Applied Materials, Inc. Apparatus for improved biasing and retaining of a workpiece in a workpiece processing system
US6213478B1 (en) * 1999-03-11 2001-04-10 Moore Epitaxial, Inc. Holding mechanism for a susceptor in a substrate processing reactor
US6214121B1 (en) * 1999-07-07 2001-04-10 Applied Materials, Inc. Pedestal with a thermally controlled platen
US6410172B1 (en) 1999-11-23 2002-06-25 Advanced Ceramics Corporation Articles coated with aluminum nitride by chemical vapor deposition
JP2001244320A (ja) * 2000-02-25 2001-09-07 Ibiden Co Ltd セラミック基板およびその製造方法
KR20010111058A (ko) * 2000-06-09 2001-12-15 조셉 제이. 스위니 전체 영역 온도 제어 정전기 척 및 그 제조방법
KR100378187B1 (ko) * 2000-11-09 2003-03-29 삼성전자주식회사 정전척을 구비한 웨이퍼 지지대 및 이를 이용한 웨이퍼 디척킹 방법
KR20020046214A (ko) * 2000-12-11 2002-06-20 어드밴스드 세라믹스 인터내셔날 코포레이션 정전척 및 그 제조방법
US20030107865A1 (en) * 2000-12-11 2003-06-12 Shinsuke Masuda Wafer handling apparatus and method of manufacturing the same
US20020185487A1 (en) * 2001-05-02 2002-12-12 Ramesh Divakar Ceramic heater with heater element and method for use thereof
US6535372B2 (en) * 2001-06-20 2003-03-18 Applied Materials, Inc. Controlled resistivity boron nitride electrostatic chuck apparatus for retaining a semiconductor wafer and method of fabricating the same
KR100443122B1 (ko) * 2001-10-19 2004-08-04 삼성전자주식회사 반도체 소자 제조장치용 히터 어셈블리
DE10209080B4 (de) * 2002-03-01 2014-01-09 Cvt Gmbh & Co. Kg Verfahren zur Herstellung eines Widerstandsheizelementes sowie ein Widerstandsheizelement
JP2003344169A (ja) * 2002-05-22 2003-12-03 Shin Etsu Chem Co Ltd 熱電対保護管
JP3963788B2 (ja) 2002-06-20 2007-08-22 信越化学工業株式会社 静電吸着機能を有する加熱装置
JP4082985B2 (ja) * 2002-11-01 2008-04-30 信越化学工業株式会社 静電吸着機能を有する加熱装置及びその製造方法

Similar Documents

Publication Publication Date Title
JP2006517740A5 (enExample)
JP3664757B2 (ja) セラミック発熱体の製造方法
JP3187417U (ja) 封入されたグラファイト加熱器および方法
TWI344683B (en) Electrostatic chuck with heater and manufacturing method thereof
US7364624B2 (en) Wafer handling apparatus and method of manufacturing thereof
CN101374990B (zh) 熨斗底板及包括该底板的熨斗
TW546984B (en) Ceramic heater with heater element and method for use thereof
US20070133964A1 (en) Fluid heating heater
CA2330885A1 (en) Ceramic heater
EP1696704A4 (en) CERAMIC HEATING ELEMENT AND MANUFACTURING METHOD THEREFOR
TW200522249A (en) Electrostatic chuck and manufacturing method for the same, and alumina sintered member and manufacturing method for the same
JP2007173828A5 (enExample)
JP5258480B2 (ja) セラミックヒータ
WO2006052576A3 (en) Encapsulated wafer processing device and process for making thereof
KR102274098B1 (ko) 세라믹스 히터
CN119872085B (zh) 耐高能量冲击的热敏打印头用发热基板及其制造方法
TWI317156B (en) Heating element
WO2006001373A1 (ja) セラミックヒータとその製造方法及び加熱装置並びにヘアアイロン
TW200802679A (en) Electrostatic chuck and method for making the same
GB2288110A (en) Heater or temperature sensor using a layer of metal matrix compound
IT8922715A1 (it) Elemento riscaldante ad alta temperatura, procedimento per la sua produzione e impiego dello stesso
JPH11312570A (ja) セラミックヒータ
CN119489626B (zh) 耐能量冲击的热敏打印头用发热基板及其制备方法
JP2009126117A (ja) サーマルプリントヘッドおよびその製造方法、並びに、サーマルプリンタ
JP2004335456A5 (enExample)