JP2006517054A - 銅裏面金属構造を備えるＧａＡｓ薄型ダイ - Google Patents

銅裏面金属構造を備えるＧａＡｓ薄型ダイ Download PDF

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Publication number
JP2006517054A
JP2006517054A JP2004557131A JP2004557131A JP2006517054A JP 2006517054 A JP2006517054 A JP 2006517054A JP 2004557131 A JP2004557131 A JP 2004557131A JP 2004557131 A JP2004557131 A JP 2004557131A JP 2006517054 A JP2006517054 A JP 2006517054A
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JP
Japan
Prior art keywords
die
gaas substrate
backside metal
copper
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004557131A
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English (en)
Japanese (ja)
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JP2006517054A5 (https=
Inventor
ジェイ． エリオット、アレクサンダー
デール クローダー、ジェフリー
ジーン ミラー、モンテ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
NXP USA Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP USA Inc filed Critical NXP USA Inc
Publication of JP2006517054A publication Critical patent/JP2006517054A/ja
Publication of JP2006517054A5 publication Critical patent/JP2006517054A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2004557131A 2002-11-27 2003-09-30 銅裏面金属構造を備えるＧａＡｓ薄型ダイ Pending JP2006517054A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/306,834 US6870243B2 (en) 2002-11-27 2002-11-27 Thin GaAs die with copper back-metal structure
PCT/US2003/030861 WO2004051733A1 (en) 2002-11-27 2003-09-30 Thin gaas die with copper back-metal structure

Publications (2)

Publication Number Publication Date
JP2006517054A true JP2006517054A (ja) 2006-07-13
JP2006517054A5 JP2006517054A5 (https=) 2006-11-24

Family

ID=32325776

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004557131A Pending JP2006517054A (ja) 2002-11-27 2003-09-30 銅裏面金属構造を備えるＧａＡｓ薄型ダイ

Country Status (7)

Country Link
US (2) US6870243B2 (https=)
JP (1) JP2006517054A (https=)
KR (1) KR20050085143A (https=)
CN (1) CN1720610B (https=)
AU (1) AU2003277129A1 (https=)
TW (1) TWI339425B (https=)
WO (1) WO2004051733A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028295A (ja) * 2006-07-25 2008-02-07 Toyota Central Res & Dev Lab Inc パワー半導体モジュール及びその製造方法

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* Cited by examiner, † Cited by third party
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US6870243B2 (en) * 2002-11-27 2005-03-22 Freescale Semiconductor, Inc. Thin GaAs die with copper back-metal structure
US6833289B2 (en) * 2003-05-12 2004-12-21 Intel Corporation Fluxless die-to-heat spreader bonding using thermal interface material
US20050085084A1 (en) * 2003-10-16 2005-04-21 Chang Edward Y. Method of fabricating copper metallization on backside of gallium arsenide devices
US7221055B2 (en) * 2005-05-23 2007-05-22 Texas Instruments Incorporated System and method for die attach using a backside heat spreader
US7923842B2 (en) 2006-03-16 2011-04-12 Skyworks Solutions, Inc. GaAs integrated circuit device and method of attaching same
CN100449740C (zh) * 2006-06-19 2009-01-07 上海集成电路研发中心有限公司 降低半导体器件发热的散热方法、相应器件及其制造方法
WO2008060447A2 (en) * 2006-11-09 2008-05-22 Quantum Leap Packaging, Inc. Microcircuit package having ductile layer
US20090108437A1 (en) * 2007-10-29 2009-04-30 M/A-Com, Inc. Wafer scale integrated thermal heat spreader
JP5103245B2 (ja) * 2008-03-31 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置
US8987878B2 (en) * 2010-10-29 2015-03-24 Alpha And Omega Semiconductor Incorporated Substrateless power device packages
US8415805B2 (en) 2010-12-17 2013-04-09 Skyworks Solutions, Inc. Etched wafers and methods of forming the same
JP2013098481A (ja) * 2011-11-04 2013-05-20 Sumitomo Electric Device Innovations Inc 半導体装置
US8900969B2 (en) 2012-01-27 2014-12-02 Skyworks Solutions, Inc. Methods of stress balancing in gallium arsenide wafer processing
CN103377914A (zh) * 2012-04-18 2013-10-30 稳懋半导体股份有限公司 半导体元件背面铜金属的改良结构及其加工方法
US9093506B2 (en) 2012-05-08 2015-07-28 Skyworks Solutions, Inc. Process for fabricating gallium arsenide devices with copper contact layer
JP2014099547A (ja) * 2012-11-15 2014-05-29 Mitsubishi Electric Corp 電力半導体モジュールおよびその製造方法
US9530719B2 (en) 2014-06-13 2016-12-27 Skyworks Solutions, Inc. Direct die solder of gallium arsenide integrated circuit dies and methods of manufacturing gallium arsenide wafers
TWI660471B (zh) * 2017-10-06 2019-05-21 財團法人工業技術研究院 晶片封裝
US11133241B2 (en) 2019-06-28 2021-09-28 Stmicroelectronics, Inc. Semiconductor package with a cavity in a die pad for reducing voids in the solder
CN112989744B (zh) * 2021-02-08 2023-11-17 泰凌微电子(上海)股份有限公司 一种半导体芯片的封装设计方法以及装置

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JPH04225536A (ja) * 1990-12-27 1992-08-14 Nikko Kyodo Co Ltd 化合物半導体装置の製造方法
JPH05243396A (ja) * 1992-03-02 1993-09-21 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH06244320A (ja) * 1993-02-16 1994-09-02 Hitachi Ltd 樹脂封止型半導体装置
JPH09306932A (ja) * 1996-05-17 1997-11-28 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2003045875A (ja) * 2001-07-30 2003-02-14 Nec Kagobutsu Device Kk 半導体装置およびその製造方法

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Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JPH04225536A (ja) * 1990-12-27 1992-08-14 Nikko Kyodo Co Ltd 化合物半導体装置の製造方法
JPH05243396A (ja) * 1992-03-02 1993-09-21 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JPH06244320A (ja) * 1993-02-16 1994-09-02 Hitachi Ltd 樹脂封止型半導体装置
JPH09306932A (ja) * 1996-05-17 1997-11-28 Sanyo Electric Co Ltd 半導体装置の製造方法
JP2003045875A (ja) * 2001-07-30 2003-02-14 Nec Kagobutsu Device Kk 半導体装置およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008028295A (ja) * 2006-07-25 2008-02-07 Toyota Central Res & Dev Lab Inc パワー半導体モジュール及びその製造方法

Also Published As

Publication number Publication date
AU2003277129A1 (en) 2004-06-23
US20050127480A1 (en) 2005-06-16
WO2004051733A1 (en) 2004-06-17
CN1720610B (zh) 2010-10-13
TW200416970A (en) 2004-09-01
US7092890B2 (en) 2006-08-15
TWI339425B (en) 2011-03-21
US6870243B2 (en) 2005-03-22
US20040099932A1 (en) 2004-05-27
CN1720610A (zh) 2006-01-11
KR20050085143A (ko) 2005-08-29

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