AU2003277129A1 - Thin gaas die with copper back-metal structure - Google Patents

Thin gaas die with copper back-metal structure

Info

Publication number
AU2003277129A1
AU2003277129A1 AU2003277129A AU2003277129A AU2003277129A1 AU 2003277129 A1 AU2003277129 A1 AU 2003277129A1 AU 2003277129 A AU2003277129 A AU 2003277129A AU 2003277129 A AU2003277129 A AU 2003277129A AU 2003277129 A1 AU2003277129 A1 AU 2003277129A1
Authority
AU
Australia
Prior art keywords
metal structure
copper back
thin gaas
gaas die
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2003277129A
Other languages
English (en)
Inventor
Jeffrey Dale Crowder
Alexander J. Elliott
Monte Gene Miller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of AU2003277129A1 publication Critical patent/AU2003277129A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
AU2003277129A 2002-11-27 2003-09-30 Thin gaas die with copper back-metal structure Abandoned AU2003277129A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/308,334 2002-11-27
US10/306,834 US6870243B2 (en) 2002-11-27 2002-11-27 Thin GaAs die with copper back-metal structure
PCT/US2003/030861 WO2004051733A1 (en) 2002-11-27 2003-09-30 Thin gaas die with copper back-metal structure

Publications (1)

Publication Number Publication Date
AU2003277129A1 true AU2003277129A1 (en) 2004-06-23

Family

ID=32325776

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2003277129A Abandoned AU2003277129A1 (en) 2002-11-27 2003-09-30 Thin gaas die with copper back-metal structure

Country Status (7)

Country Link
US (2) US6870243B2 (https=)
JP (1) JP2006517054A (https=)
KR (1) KR20050085143A (https=)
CN (1) CN1720610B (https=)
AU (1) AU2003277129A1 (https=)
TW (1) TWI339425B (https=)
WO (1) WO2004051733A1 (https=)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6870243B2 (en) * 2002-11-27 2005-03-22 Freescale Semiconductor, Inc. Thin GaAs die with copper back-metal structure
US6833289B2 (en) * 2003-05-12 2004-12-21 Intel Corporation Fluxless die-to-heat spreader bonding using thermal interface material
US20050085084A1 (en) * 2003-10-16 2005-04-21 Chang Edward Y. Method of fabricating copper metallization on backside of gallium arsenide devices
US7221055B2 (en) * 2005-05-23 2007-05-22 Texas Instruments Incorporated System and method for die attach using a backside heat spreader
US7923842B2 (en) 2006-03-16 2011-04-12 Skyworks Solutions, Inc. GaAs integrated circuit device and method of attaching same
CN100449740C (zh) * 2006-06-19 2009-01-07 上海集成电路研发中心有限公司 降低半导体器件发热的散热方法、相应器件及其制造方法
JP4917375B2 (ja) * 2006-07-25 2012-04-18 株式会社豊田中央研究所 パワー半導体モジュールの製造方法
WO2008060447A2 (en) * 2006-11-09 2008-05-22 Quantum Leap Packaging, Inc. Microcircuit package having ductile layer
US20090108437A1 (en) * 2007-10-29 2009-04-30 M/A-Com, Inc. Wafer scale integrated thermal heat spreader
JP5103245B2 (ja) * 2008-03-31 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置
US8987878B2 (en) * 2010-10-29 2015-03-24 Alpha And Omega Semiconductor Incorporated Substrateless power device packages
US8415805B2 (en) 2010-12-17 2013-04-09 Skyworks Solutions, Inc. Etched wafers and methods of forming the same
JP2013098481A (ja) * 2011-11-04 2013-05-20 Sumitomo Electric Device Innovations Inc 半導体装置
US8900969B2 (en) 2012-01-27 2014-12-02 Skyworks Solutions, Inc. Methods of stress balancing in gallium arsenide wafer processing
CN103377914A (zh) * 2012-04-18 2013-10-30 稳懋半导体股份有限公司 半导体元件背面铜金属的改良结构及其加工方法
US9093506B2 (en) 2012-05-08 2015-07-28 Skyworks Solutions, Inc. Process for fabricating gallium arsenide devices with copper contact layer
JP2014099547A (ja) * 2012-11-15 2014-05-29 Mitsubishi Electric Corp 電力半導体モジュールおよびその製造方法
US9530719B2 (en) 2014-06-13 2016-12-27 Skyworks Solutions, Inc. Direct die solder of gallium arsenide integrated circuit dies and methods of manufacturing gallium arsenide wafers
TWI660471B (zh) * 2017-10-06 2019-05-21 財團法人工業技術研究院 晶片封裝
US11133241B2 (en) 2019-06-28 2021-09-28 Stmicroelectronics, Inc. Semiconductor package with a cavity in a die pad for reducing voids in the solder
CN112989744B (zh) * 2021-02-08 2023-11-17 泰凌微电子(上海)股份有限公司 一种半导体芯片的封装设计方法以及装置

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3755720A (en) * 1972-09-25 1973-08-28 Rca Corp Glass encapsulated semiconductor device
US3942186A (en) * 1973-10-09 1976-03-02 Westinghouse Electric Corporation High frequency, field-effect transistor
US4321099A (en) * 1979-11-13 1982-03-23 Nasa Method of fabricating Schottky barrier solar cell
US4543442A (en) * 1983-06-24 1985-09-24 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration GaAs Schottky barrier photo-responsive device and method of fabrication
JPS61174723A (ja) * 1985-01-30 1986-08-06 Mitsubishi Electric Corp 半導体装置の製造方法
US4929516A (en) * 1985-03-14 1990-05-29 Olin Corporation Semiconductor die attach system
US4872047A (en) * 1986-11-07 1989-10-03 Olin Corporation Semiconductor die attach system
US4989117A (en) * 1990-02-12 1991-01-29 Rogers Corporation Molded integrated circuit package incorporating thin decoupling capacitor
JPH04225536A (ja) * 1990-12-27 1992-08-14 Nikko Kyodo Co Ltd 化合物半導体装置の製造方法
JPH05243396A (ja) * 1992-03-02 1993-09-21 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2978351B2 (ja) * 1993-02-16 1999-11-15 株式会社日立製作所 樹脂封止型半導体装置
US5545289A (en) * 1994-02-03 1996-08-13 Applied Materials, Inc. Passivating, stripping and corrosion inhibition of semiconductor substrates
IT1274129B (it) * 1994-11-29 1997-07-15 Soriani & Moser Manufacturers Giostra di divertimento di tipo perfezionato
JP2757805B2 (ja) 1995-01-27 1998-05-25 日本電気株式会社 半導体装置
US5528076A (en) * 1995-02-01 1996-06-18 Motorola, Inc. Leadframe having metal impregnated silicon carbide mounting area
US5622305A (en) * 1995-05-10 1997-04-22 Lucent Technologies Inc. Bonding scheme using group VB metallic layer
JPH09306932A (ja) * 1996-05-17 1997-11-28 Sanyo Electric Co Ltd 半導体装置の製造方法
US6105865A (en) * 1998-07-17 2000-08-22 Hardesty; Laurence Daniel Financial transaction system with retirement saving benefit
US6010966A (en) * 1998-08-07 2000-01-04 Applied Materials, Inc. Hydrocarbon gases for anisotropic etching of metal-containing layers
JP3690171B2 (ja) * 1999-03-16 2005-08-31 株式会社日立製作所 複合材料とその製造方法及び用途
US6609106B1 (en) * 1999-05-07 2003-08-19 Steven C. Robertson System and method for providing electronic multi-merchant gift registry services over a distributed network
US6211550B1 (en) * 1999-06-24 2001-04-03 Intersil Corporation Backmetal drain terminal with low stress and thermal resistance
US6426289B1 (en) * 2000-03-24 2002-07-30 Micron Technology, Inc. Method of fabricating a barrier layer associated with a conductor layer in damascene structures
TWI248384B (en) * 2000-06-12 2006-02-01 Hitachi Ltd Electronic device
US6551852B2 (en) * 2001-06-11 2003-04-22 Micron Technology Inc. Method of forming a recessed magnetic storage element
JP2003045875A (ja) * 2001-07-30 2003-02-14 Nec Kagobutsu Device Kk 半導体装置およびその製造方法
US6583500B1 (en) * 2002-02-11 2003-06-24 Texas Instruments Incorporated Thin tin preplated semiconductor leadframes
US6787910B2 (en) * 2002-07-23 2004-09-07 National Chiao Tung University Schottky structure in GaAs semiconductor device
US6870243B2 (en) * 2002-11-27 2005-03-22 Freescale Semiconductor, Inc. Thin GaAs die with copper back-metal structure
US20040146138A1 (en) * 2003-01-23 2004-07-29 Motorola, Inc. Large flat panel gallium arsenide arrays on silicon substrate for low dose X-ray digital imaging

Also Published As

Publication number Publication date
US20050127480A1 (en) 2005-06-16
WO2004051733A1 (en) 2004-06-17
CN1720610B (zh) 2010-10-13
JP2006517054A (ja) 2006-07-13
TW200416970A (en) 2004-09-01
US7092890B2 (en) 2006-08-15
TWI339425B (en) 2011-03-21
US6870243B2 (en) 2005-03-22
US20040099932A1 (en) 2004-05-27
CN1720610A (zh) 2006-01-11
KR20050085143A (ko) 2005-08-29

Similar Documents

Publication Publication Date Title
AU2003277129A1 (en) Thin gaas die with copper back-metal structure
AU2003265512A1 (en) Electronic die
AU2003302139A1 (en) Aluminum-zinc-magnesium-copper alloy extrusion
AU2003210637A1 (en) Semiconductor die package with semiconductor die having side electrical connection
AU2003236001A1 (en) High-strength copper alloy
AU2002255430A1 (en) An antenna
AU2003253897A1 (en) Dendritic cell pontentiation
AU2003212392A1 (en) Lidar
AU2003272895A1 (en) Booster circuit
AU2003265313A1 (en) Providing advanced communications features
AU2003242381A1 (en) Radar
AU2003243292A1 (en) Die connected with integrated circuit component
AU2003209021A1 (en) Slot die
AU2002952146A0 (en) Stretchable conducting lead
AU2003218199A1 (en) High speed acid copper plating
AUPR621901A0 (en) Multi-channel cooling die
AU2003244119A1 (en) Copper-tin-oxygen based alloy plating
AU2003285002A1 (en) Electromagnetic die casting
AU2003279079A1 (en) Low stress semiconductor die attach
AU2003263737A1 (en) Pre-aligner
AU2003288566A1 (en) Deformable-mirror cooling
AU2003263183A1 (en) Low pressure casting die
AU2003249400A1 (en) Bra
AU2002228959A1 (en) Die assembly
AU2003265610A1 (en) Die carrier

Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase