KR20050085143A - 구리 백메탈 구조를 갖는 얇은 ＧａＡｓ 다이 - Google Patents

구리 백메탈 구조를 갖는 얇은 ＧａＡｓ 다이 Download PDF

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Publication number
KR20050085143A
KR20050085143A KR1020057009331A KR20057009331A KR20050085143A KR 20050085143 A KR20050085143 A KR 20050085143A KR 1020057009331 A KR1020057009331 A KR 1020057009331A KR 20057009331 A KR20057009331 A KR 20057009331A KR 20050085143 A KR20050085143 A KR 20050085143A
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KR
South Korea
Prior art keywords
semiconductor device
microns
gaas substrate
die
metal layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020057009331A
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English (en)
Korean (ko)
Inventor
알렉산더 제이. 엘리오트
제프리 댈 크라우더
몬테 젠 밀러
Original Assignee
프리스케일 세미컨덕터, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 프리스케일 세미컨덕터, 인크. filed Critical 프리스케일 세미컨덕터, 인크.
Publication of KR20050085143A publication Critical patent/KR20050085143A/ko
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/70—Fillings or auxiliary members in containers or in encapsulations for thermal protection or control
    • H10W40/77—Auxiliary members characterised by their shape
    • H10W40/778—Auxiliary members characterised by their shape in encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020057009331A 2002-11-27 2003-09-30 구리 백메탈 구조를 갖는 얇은 ＧａＡｓ 다이 Ceased KR20050085143A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/308,334 2002-11-27
US10/306,834 US6870243B2 (en) 2002-11-27 2002-11-27 Thin GaAs die with copper back-metal structure

Publications (1)

Publication Number Publication Date
KR20050085143A true KR20050085143A (ko) 2005-08-29

Family

ID=32325776

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057009331A Ceased KR20050085143A (ko) 2002-11-27 2003-09-30 구리 백메탈 구조를 갖는 얇은 ＧａＡｓ 다이

Country Status (7)

Country Link
US (2) US6870243B2 (https=)
JP (1) JP2006517054A (https=)
KR (1) KR20050085143A (https=)
CN (1) CN1720610B (https=)
AU (1) AU2003277129A1 (https=)
TW (1) TWI339425B (https=)
WO (1) WO2004051733A1 (https=)

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US6870243B2 (en) * 2002-11-27 2005-03-22 Freescale Semiconductor, Inc. Thin GaAs die with copper back-metal structure
US6833289B2 (en) * 2003-05-12 2004-12-21 Intel Corporation Fluxless die-to-heat spreader bonding using thermal interface material
US20050085084A1 (en) * 2003-10-16 2005-04-21 Chang Edward Y. Method of fabricating copper metallization on backside of gallium arsenide devices
US7221055B2 (en) * 2005-05-23 2007-05-22 Texas Instruments Incorporated System and method for die attach using a backside heat spreader
US7923842B2 (en) 2006-03-16 2011-04-12 Skyworks Solutions, Inc. GaAs integrated circuit device and method of attaching same
CN100449740C (zh) * 2006-06-19 2009-01-07 上海集成电路研发中心有限公司 降低半导体器件发热的散热方法、相应器件及其制造方法
JP4917375B2 (ja) * 2006-07-25 2012-04-18 株式会社豊田中央研究所 パワー半導体モジュールの製造方法
WO2008060447A2 (en) * 2006-11-09 2008-05-22 Quantum Leap Packaging, Inc. Microcircuit package having ductile layer
US20090108437A1 (en) * 2007-10-29 2009-04-30 M/A-Com, Inc. Wafer scale integrated thermal heat spreader
JP5103245B2 (ja) * 2008-03-31 2012-12-19 ルネサスエレクトロニクス株式会社 半導体装置
US8987878B2 (en) * 2010-10-29 2015-03-24 Alpha And Omega Semiconductor Incorporated Substrateless power device packages
US8415805B2 (en) 2010-12-17 2013-04-09 Skyworks Solutions, Inc. Etched wafers and methods of forming the same
JP2013098481A (ja) * 2011-11-04 2013-05-20 Sumitomo Electric Device Innovations Inc 半導体装置
US8900969B2 (en) 2012-01-27 2014-12-02 Skyworks Solutions, Inc. Methods of stress balancing in gallium arsenide wafer processing
CN103377914A (zh) * 2012-04-18 2013-10-30 稳懋半导体股份有限公司 半导体元件背面铜金属的改良结构及其加工方法
US9093506B2 (en) 2012-05-08 2015-07-28 Skyworks Solutions, Inc. Process for fabricating gallium arsenide devices with copper contact layer
JP2014099547A (ja) * 2012-11-15 2014-05-29 Mitsubishi Electric Corp 電力半導体モジュールおよびその製造方法
US9530719B2 (en) 2014-06-13 2016-12-27 Skyworks Solutions, Inc. Direct die solder of gallium arsenide integrated circuit dies and methods of manufacturing gallium arsenide wafers
TWI660471B (zh) * 2017-10-06 2019-05-21 財團法人工業技術研究院 晶片封裝
US11133241B2 (en) 2019-06-28 2021-09-28 Stmicroelectronics, Inc. Semiconductor package with a cavity in a die pad for reducing voids in the solder
CN112989744B (zh) * 2021-02-08 2023-11-17 泰凌微电子(上海)股份有限公司 一种半导体芯片的封装设计方法以及装置

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Also Published As

Publication number Publication date
AU2003277129A1 (en) 2004-06-23
US20050127480A1 (en) 2005-06-16
WO2004051733A1 (en) 2004-06-17
CN1720610B (zh) 2010-10-13
JP2006517054A (ja) 2006-07-13
TW200416970A (en) 2004-09-01
US7092890B2 (en) 2006-08-15
TWI339425B (en) 2011-03-21
US6870243B2 (en) 2005-03-22
US20040099932A1 (en) 2004-05-27
CN1720610A (zh) 2006-01-11

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